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POGGI, ANTONELLA

POGGI, ANTONELLA  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 129 (tempo di esecuzione: 0.057 secondi).
Titolo Data di pubblicazione Autore(i) File
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects 1-gen-2002 Lazar, M; Raynaud, C; Planson, D; Locatelli, Ml; Isoird, K; Ottaviani, L; Chante, Jp; Nipoti, R; Poggi, A; Cardinali, G
A new sensitive and fast detection system for amphetamine type stimulants (ATS), based on gas-chromatography (GC) and hollow fiber infrared absorption spectroscopy (HF-IRAS) 1-gen-2014 Liberatore, Nicola; Luciani, Domenico; Mengali, Sandro; Viola, Roberto; Cardinali, GIAN CARLO; Elmi, Ivan; Poggi, Antonella; Zampolli, Stefano; Biavardi, Elisa; Dalcanale, Enrico; Menozzi, Daniela
A novel pneumatically driven SU-8 microvalve for high speed gas chromatographic applications 1-gen-2012 Nubile, A; Nubile, A; Poggi, A; Cozzani, E; Elmi, I; Zampolli, S; Messina, M; Cardinali, G C; Mancarella, F; Belluce, M
Advanced microsensor technology using porous silicon layers permeated with Sn-V mixed oxides 1-gen-1996 Poggi a; Angelucci R; Dori L; Parisini A; Maccagnani P; Corticelli F
Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data 1-gen-2003 Moscatelli, F; Scorzoni, A; Poggi, A; Cardinali, Gc; Nipoti, R
Al<sup>+</sup> implanted 4H-SiC p<sup>+</sup>n diodes: SIMS, C-V and DLTS characterizations 1-gen-2009 Nipoti, R; Fabbri, F; Moscatelli, F; Poggi, A; Cavallini, A; Carnera, A
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 1-gen-2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 1-gen-2007 Canino, M; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 1-gen-2006 Canino M; .Giannazzo F.; Roccaforte F.; Poggi A.; Solmi S.; Nipoti R.
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 1-gen-2007 Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1-gen-2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1-gen-2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1-gen-2009 Pintile, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, B G
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation 1-gen-2007 Moscatelli F; Scorzoni A; Poggi A; Nipoti R
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature 1-gen-2005 Bergamini F.; Moscatelli F.; Canino M.; Poggi A.; Nipoti R.
Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature 1-gen-2004 Bergamini, F; Moscatelli, F; Canino, M; Poggi, A; Nipoti, R
beta-SiC NWs grown on patterned and MEMS silicon substrates 1-gen-2011 Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella
C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. 1-gen-2009 Fabbri, F; Moscatelli, F; Poggi, A; Nipoti, R; Cavallini, A
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 1-gen-2004 Poggi, A; Nipoti, R; Solmi, S; Bersani, M; Vanzetti, L
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 1-gen-2003 Poggi A.; Nipoti R.; Solmi S.; Bersani M; Vanzetti L.