SCHILIRO', EMANUELA
 Distribuzione geografica
Continente #
AS - Asia 826
NA - Nord America 581
EU - Europa 423
SA - Sud America 136
AF - Africa 21
OC - Oceania 3
Totale 1.990
Nazione #
US - Stati Uniti d'America 551
SG - Singapore 318
CN - Cina 211
IT - Italia 194
BR - Brasile 108
VN - Vietnam 90
HK - Hong Kong 65
FI - Finlandia 49
FR - Francia 40
NL - Olanda 39
KR - Corea 35
DE - Germania 26
GB - Regno Unito 26
JP - Giappone 25
IN - India 23
BD - Bangladesh 20
CA - Canada 14
AR - Argentina 11
EC - Ecuador 7
ES - Italia 7
CO - Colombia 6
ID - Indonesia 6
MX - Messico 6
IL - Israele 5
MA - Marocco 5
PL - Polonia 5
IE - Irlanda 4
JM - Giamaica 4
PK - Pakistan 4
TR - Turchia 4
AE - Emirati Arabi Uniti 3
AT - Austria 3
BE - Belgio 3
DZ - Algeria 3
IQ - Iraq 3
KE - Kenya 3
MY - Malesia 3
RO - Romania 3
SA - Arabia Saudita 3
SK - Slovacchia (Repubblica Slovacca) 3
UA - Ucraina 3
AU - Australia 2
BG - Bulgaria 2
EG - Egitto 2
GT - Guatemala 2
HU - Ungheria 2
LT - Lituania 2
RU - Federazione Russa 2
SE - Svezia 2
VE - Venezuela 2
ZA - Sudafrica 2
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BJ - Benin 1
BS - Bahamas 1
BW - Botswana 1
BY - Bielorussia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EE - Estonia 1
GH - Ghana 1
GR - Grecia 1
HR - Croazia 1
JO - Giordania 1
KW - Kuwait 1
KZ - Kazakistan 1
LB - Libano 1
NI - Nicaragua 1
NO - Norvegia 1
OM - Oman 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PY - Paraguay 1
RW - Ruanda 1
SD - Sudan 1
SI - Slovenia 1
TM - Turkmenistan 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UZ - Uzbekistan 1
Totale 1.990
Città #
Singapore 184
San Jose 152
Hefei 84
Hong Kong 65
Los Angeles 54
Cavallino 46
Ashburn 44
Beijing 44
Santa Clara 41
Seoul 32
Ho Chi Minh City 29
Lauterbourg 29
Hanoi 25
Lappeenranta 25
Dallas 21
Messina 20
Catania 18
New York 17
Tokyo 17
Helsinki 13
Orem 12
Turku 11
Bologna 10
Buffalo 9
Rome 9
Frankfurt am Main 8
São Paulo 8
Council Bluffs 7
Falkenstein 7
Manchester 6
Padova 6
Phoenix 6
Seattle 6
Brooklyn 5
Chennai 5
Mumbai 5
Munich 5
Palermo 5
Trieste 5
Amsterdam 4
Atlanta 4
Bengaluru 4
Bitonto 4
Boardman 4
Boston 4
Chicago 4
College Station 4
Miami 4
Minamishinagawa 4
Montreal 4
Wuhan 4
Bratislava 3
Bình Dương 3
Bắc Ninh 3
Bến Tre 3
Dublin 3
Düsseldorf 3
Guayaquil 3
Haiphong 3
Kingston 3
Lucca 3
Manaus 3
Milan 3
Nairobi 3
Newark 3
Toronto 3
Vienna 3
Warsaw 3
Belo Horizonte 2
Cairo 2
Cao Lanh 2
Casablanca 2
Casale sul Sile 2
Charlotte 2
City of London 2
Colombo 2
Greenville 2
Guangzhou 2
Houston 2
Istanbul 2
Jaboatão dos Guararapes 2
Jeonju-si 2
Johannesburg 2
Juneau 2
Kolkata 2
Kuala Lumpur 2
La Plata 2
Lahore 2
Ludhiana 2
Madrid 2
Naples 2
Osaka 2
Osasco 2
Paris 2
Parkville 2
Poplar 2
Quảng Ngãi 2
Recife 2
Resistencia 2
Riyadh 2
Totale 1.258
Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 138
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 102
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 98
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 80
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 78
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 69
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 69
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 65
Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2 62
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 59
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 58
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 57
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 56
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 55
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 55
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 54
Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots 53
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 53
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 52
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 52
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 52
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 51
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 49
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 48
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 48
Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials 43
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 42
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 41
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 39
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 38
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices 38
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 37
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 34
Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC 22
Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates 21
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy 21
Totale 2.160
Categoria #
all - tutte 6.352
article - articoli 6.352
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.704


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20249 0 0 0 0 0 0 0 0 5 0 4 0
2024/2025856 2 2 23 10 39 232 71 95 45 44 168 125
2025/20261.295 62 139 108 166 192 79 178 82 92 80 76 41
Totale 2.160