CNR Institutional Research Information System

SCHILIRO', EMANUELA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 846
NA - Nord America 769
EU - Europa 463
Continente sconosciuto - Info sul continente non disponibili 170
SA - Sud America 143
AF - Africa 21
OC - Oceania 3
Totale 2.415
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 727
SG - Singapore 319
IT - Italia 225
CN - Cina 213
BR - Brasile 109
VN - Vietnam 91
HK - Hong Kong 65
FI - Finlandia 49
FR - Francia 40
NL - Olanda 39
KR - Corea 36
GB - Regno Unito 29
BD - Bangladesh 27
DE - Germania 27
JP - Giappone 25
IN - India 23
CA - Canada 20
AR - Argentina 12
EC - Ecuador 10
ID - Indonesia 9
ES - Italia 8
CO - Colombia 7
JM - Giamaica 6
MX - Messico 6
IL - Israele 5
MA - Marocco 5
PL - Polonia 5
UA - Ucraina 5
IE - Irlanda 4
PK - Pakistan 4
TR - Turchia 4
AE - Emirati Arabi Uniti 3
AT - Austria 3
BE - Belgio 3
DZ - Algeria 3
IQ - Iraq 3
KE - Kenya 3
MY - Malesia 3
NI - Nicaragua 3
PH - Filippine 3
RO - Romania 3
SA - Arabia Saudita 3
SK - Slovacchia (Repubblica Slovacca) 3
VE - Venezuela 3
AU - Australia 2
BG - Bulgaria 2
CH - Svizzera 2
CR - Costa Rica 2
EG - Egitto 2
GT - Guatemala 2
HU - Ungheria 2
LT - Lituania 2
RU - Federazione Russa 2
SE - Svezia 2
TH - Thailandia 2
ZA - Sudafrica 2
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BJ - Benin 1
BS - Bahamas 1
BW - Botswana 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
EE - Estonia 1
GH - Ghana 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
JO - Giordania 1
KW - Kuwait 1
KZ - Kazakistan 1
LB - Libano 1
NO - Norvegia 1
OM - Oman 1
PE - Perù 1
PG - Papua Nuova Guinea 1
PY - Paraguay 1
RW - Ruanda 1
SD - Sudan 1
SI - Slovenia 1
TM - Turkmenistan 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UZ - Uzbekistan 1
Totale 2.245
Salva come PNG Salva come JPEG
Città #
Singapore 184
San Jose 179
Hefei 85
Hong Kong 65
Ashburn 63
Los Angeles 56
Santa Clara 48
Cavallino 46
Beijing 44
Seoul 32
Ho Chi Minh City 29
Lauterbourg 29
Hanoi 26
Lappeenranta 25
Dallas 22
Messina 20
Catania 19
New York 18
Tokyo 17
Helsinki 13
Bologna 12
Orem 12
Rome 12
Buffalo 11
Turku 11
Milan 10
Atlanta 8
Frankfurt am Main 8
São Paulo 8
Brooklyn 7
Council Bluffs 7
Falkenstein 7
Figino 7
Manchester 6
Montreal 6
Padova 6
Phoenix 6
Seattle 6
Boston 5
Chennai 5
Chicago 5
Guayaquil 5
Kingston 5
Miami 5
Mumbai 5
Munich 5
Palermo 5
Queens 5
Trieste 5
Amsterdam 4
Bengaluru 4
Bitonto 4
Boardman 4
College Station 4
Houston 4
Minamishinagawa 4
Newark 4
Philadelphia 4
Toronto 4
Wuhan 4
Bratislava 3
Bình Dương 3
Bắc Ninh 3
Bến Tre 3
Dublin 3
Düsseldorf 3
Haiphong 3
Knoxville 3
Lucca 3
Managua 3
Manaus 3
Nairobi 3
Nottingham 3
Providence 3
The Bronx 3
Turin 3
Vienna 3
Warsaw 3
Washington 3
Annapolis 2
Aurora 2
Belo Horizonte 2
Cairo 2
Cao Lanh 2
Casablanca 2
Casale sul Sile 2
Charlotte 2
City of London 2
Colombo 2
Columbus 2
Greensboro 2
Greenville 2
Guangzhou 2
Istanbul 2
Jaboatão dos Guararapes 2
Jeonju-si 2
Johannesburg 2
Juneau 2
Kansas City 2
Kolkata 2
Totale 1.368
Salva come PNG Salva come JPEG
Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 155
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 108
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 108
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 104
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 86
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 82
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 75
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 72
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 67
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 67
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 66
Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2 65
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 62
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 62
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 62
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 62
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 61
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 60
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 60
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 58
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 56
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 56
Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots 55
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 55
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 55
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 55
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 54
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 54
Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials 51
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 46
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 46
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 45
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 45
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices 43
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 41
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 39
Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC 27
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy 26
Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates 24
Totale 2.415
Salva come PNG Salva come JPEG
Categoria #
all - tutte 7.511
article - articoli 7.511
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.022
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20249 0 0 0 0 0 0 0 0 5 0 4 0
2024/2025856 2 2 23 10 39 232 71 95 45 44 168 125
2025/20261.295 62 139 108 166 192 79 178 82 92 80 76 41
2026/2027255 72 51 132 0 0 0 0 0 0 0 0 0
Totale 2.415