LA VIA, FRANCESCO
LA VIA, FRANCESCO
Istituto per la Microelettronica e Microsistemi - IMM
Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector
2025 Mancuso, A. S.; Sangregorio, E.; Muoio, A.; De Luca, S.; Kushoro, M. H.; Gallo, E.; Vanellone, S.; Quadrivi, E.; Trotta, A.; Calcagno, L.; La Via, F.
Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams
2025 Garofalo, A.; Muoio, A.; Sapienza, S.; Ferri, M.; Belsito, L.; Roncaglia, A.; La Via, F.
Numerical simulations for neutron detector optimization
2025 Muoio, A.; De Luca, S.; Mancuso, A. S.; Minniti, T.; Sangregorio, E.; La Via, F.
Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters
2025 Muoio, A.; Garofalo, A.; Sapienza, S.; La Via, F.
Silicon Carbide devices for radiation detection: A review of the main performances
2025 Tudisco, S.; Altana, C.; Amaducci, S.; Ciampi, C.; Cosentino, G.; De Luca, S.; La Via, F.; Lanzalone, G.; Muoio, A.; Pasquali, G.; Trifirò, A.
Advanced approach of bulk (111) 3C-SiC epitaxial growth
2024 Calabretta, C.; Scuderi, V.; Bongiorno, C.; Anzalone, R.; Reitano, R.; Cannizzaro, A.; Mauceri, M.; Crippa, D.; Boninelli, S.; La Via, F.
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers
2024 Calabretta, C.; Pecora, A.; Agati, M.; Muoio, A.; Scuderi, V.; Privitera, S.; Reitano, R.; Boninelli, S.; La Via, F.
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
2024 Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; LA VIA, Francesco; Roncaglia, Alberto
Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures
2024 Kushoro, M. H.; Angelone, M.; Bozzi, D.; Cancelli, S.; Dal Molin, A.; Gallo, E.; Gorini, G.; La Via, F.; Parisi, M.; Perelli Cippo, E.; Putignano, O.; Tardocchi, M.; Rebai, M.
Partially depleted operation of 250 μm-thick silicon carbide neutron detectors
2024 Kushoro, M. H.; Angelone, M.; Bozzi, D.; Gorini, G.; La Via, F.; Perelli Cippo, E.; Pillon, M.; Tardocchi, M.; Rebai, M.
TEM Investigation on High Dose Al implanted 4H-SiC Epitaxial Layer
2024 Calabretta, C.; Piluso, N.; Bongiorno, C.; Boninelli, S.; La Via, F.; Severino, A.
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
2023 Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC
2023 Kollmuss, M.; La Via, F.; Wellmann, P. J.
Emerging SiC Applications beyond Power Electronic Devices
2023 La Via, Francesco; Alquier, Daniel; Giannazzo, Filippo; Kimoto, Tsunenobu; Neudeck, Philip; Ou, Haiyan; Roncaglia, Alberto; Saddow, Stephen E; Tudisco, Salvatore
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy
2023 Scuderi, Viviana; Zielinski, Marcin; La Via, Francesco
Laser crystallization of amorphous TiO2 on polymer
2023 Zimbone, Massimo; Cantarella, Maria; Giuffrida, Federico; LA VIA, Francesco; Privitera, Vittorio; Napolitani, Enrico; Impellizzeri, Giuliana
Performance of a thick 250 mi m silicon carbide detector: stability and energy resolution
2023 Kushoro, M. H.; Rebai, M.; La Via, F.; Meli, A.; Meda, L.; Parisi, M.; Perelli Cippo, E.; Putignano, O.; Trotta, A.; Tardocchi, M.
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors
2023 Altana, C.; Calcagno, L.; Ciampi, C.; La Via, F.; Lanzalone, G.; Muoio, A.; Pasquali, G.; Pellegrino, D.; Puglia, S.; Rapisarda, G.; Tudisco, S.
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
2023 Vivona, M.; Fiorenza, P.; Scuderi, V.; La Via, F.; Giannazzo, F.; Roccaforte, F.
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications
2022 Meli, A.; Muoio, A.; Reitano, R.; Sangregorio, E.; Calcagno, L.; Trotta, A.; Parisi, M.; Meda, L.; La Via, F.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector | 1-gen-2025 | Mancuso, A. S.; Sangregorio, E.; Muoio, A.; De Luca, S.; Kushoro, M. H.; Gallo, E.; Vanellone, S.; Quadrivi, E.; Trotta, A.; Calcagno, L.; La Via, F. | |
| Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams | 1-gen-2025 | Garofalo, A.; Muoio, A.; Sapienza, S.; Ferri, M.; Belsito, L.; Roncaglia, A.; La Via, F. | |
| Numerical simulations for neutron detector optimization | 1-gen-2025 | Muoio, A.; De Luca, S.; Mancuso, A. S.; Minniti, T.; Sangregorio, E.; La Via, F. | |
| Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters | 1-gen-2025 | Muoio, A.; Garofalo, A.; Sapienza, S.; La Via, F. | |
| Silicon Carbide devices for radiation detection: A review of the main performances | 1-gen-2025 | Tudisco, S.; Altana, C.; Amaducci, S.; Ciampi, C.; Cosentino, G.; De Luca, S.; La Via, F.; Lanzalone, G.; Muoio, A.; Pasquali, G.; Trifirò, A. | |
| Advanced approach of bulk (111) 3C-SiC epitaxial growth | 1-gen-2024 | Calabretta, C.; Scuderi, V.; Bongiorno, C.; Anzalone, R.; Reitano, R.; Cannizzaro, A.; Mauceri, M.; Crippa, D.; Boninelli, S.; La Via, F. | |
| Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers | 1-gen-2024 | Calabretta, C.; Pecora, A.; Agati, M.; Muoio, A.; Scuderi, V.; Privitera, S.; Reitano, R.; Boninelli, S.; La Via, F. | |
| Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 | 1-gen-2024 | Sapienza, Sergio; Belsito, Luca; Ferri, Matteo; Elmi, Ivan; Zielinski, Marcin; LA VIA, Francesco; Roncaglia, Alberto | |
| Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures | 1-gen-2024 | Kushoro, M. H.; Angelone, M.; Bozzi, D.; Cancelli, S.; Dal Molin, A.; Gallo, E.; Gorini, G.; La Via, F.; Parisi, M.; Perelli Cippo, E.; Putignano, O.; Tardocchi, M.; Rebai, M. | |
| Partially depleted operation of 250 μm-thick silicon carbide neutron detectors | 1-gen-2024 | Kushoro, M. H.; Angelone, M.; Bozzi, D.; Gorini, G.; La Via, F.; Perelli Cippo, E.; Pillon, M.; Tardocchi, M.; Rebai, M. | |
| TEM Investigation on High Dose Al implanted 4H-SiC Epitaxial Layer | 1-gen-2024 | Calabretta, C.; Piluso, N.; Bongiorno, C.; Boninelli, S.; La Via, F.; Severino, A. | |
| Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices | 1-gen-2023 | Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC | 1-gen-2023 | Kollmuss, M.; La Via, F.; Wellmann, P. J. | |
| Emerging SiC Applications beyond Power Electronic Devices | 1-gen-2023 | La Via, Francesco; Alquier, Daniel; Giannazzo, Filippo; Kimoto, Tsunenobu; Neudeck, Philip; Ou, Haiyan; Roncaglia, Alberto; Saddow, Stephen E; Tudisco, Salvatore | |
| Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy | 1-gen-2023 | Scuderi, Viviana; Zielinski, Marcin; La Via, Francesco | |
| Laser crystallization of amorphous TiO2 on polymer | 1-gen-2023 | Zimbone, Massimo; Cantarella, Maria; Giuffrida, Federico; LA VIA, Francesco; Privitera, Vittorio; Napolitani, Enrico; Impellizzeri, Giuliana | |
| Performance of a thick 250 mi m silicon carbide detector: stability and energy resolution | 1-gen-2023 | Kushoro, M. H.; Rebai, M.; La Via, F.; Meli, A.; Meda, L.; Parisi, M.; Perelli Cippo, E.; Putignano, O.; Trotta, A.; Tardocchi, M. | |
| Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors | 1-gen-2023 | Altana, C.; Calcagno, L.; Ciampi, C.; La Via, F.; Lanzalone, G.; Muoio, A.; Pasquali, G.; Pellegrino, D.; Puglia, S.; Rapisarda, G.; Tudisco, S. | |
| Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults | 1-gen-2023 | Vivona, M.; Fiorenza, P.; Scuderi, V.; La Via, F.; Giannazzo, F.; Roccaforte, F. | |
| Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications | 1-gen-2022 | Meli, A.; Muoio, A.; Reitano, R.; Sangregorio, E.; Calcagno, L.; Trotta, A.; Parisi, M.; Meda, L.; La Via, F. |