In this work, simulations are conducted to optimize a Silicon Carbide (SiC) detector for the detection of 14.1 MeV neutrons [1]. The device features an active thickness achieved through epitaxial growth of 250 mu m and an active area of 25 mm(2). In the first stage of the FLUKA simulations, the performance of the SiC detector is compared with Diamond and Silicon detectors of identical geometry. Furthermore, FLUKA simulations show saturation in alpha-particle production at a SiC thickness of approximately 200 mu m. Finally, numerical simulations using Synopsys tools are employed to optimize the edge structure of the SiC detector.
Numerical simulations for neutron detector optimization
Muoio A.
;De Luca S.;Mancuso A. S.;Sangregorio E.;La Via F.
2025
Abstract
In this work, simulations are conducted to optimize a Silicon Carbide (SiC) detector for the detection of 14.1 MeV neutrons [1]. The device features an active thickness achieved through epitaxial growth of 250 mu m and an active area of 25 mm(2). In the first stage of the FLUKA simulations, the performance of the SiC detector is compared with Diamond and Silicon detectors of identical geometry. Furthermore, FLUKA simulations show saturation in alpha-particle production at a SiC thickness of approximately 200 mu m. Finally, numerical simulations using Synopsys tools are employed to optimize the edge structure of the SiC detector.File in questo prodotto:
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