CNR Institutional Research Information System

SERVIDORI, MARCO
 Distribuzione geografica
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Continente #
AS - Asia 1.093
NA - Nord America 911
SA - Sud America 181
EU - Europa 166
AF - Africa 17
OC - Oceania 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.370
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Nazione #
US - Stati Uniti d'America 881
SG - Singapore 457
CN - Cina 271
BR - Brasile 143
VN - Vietnam 112
HK - Hong Kong 97
KR - Corea 57
FR - Francia 52
IT - Italia 27
JP - Giappone 25
IN - India 23
GB - Regno Unito 20
CA - Canada 16
NL - Olanda 13
DE - Germania 12
AR - Argentina 9
CO - Colombia 9
IL - Israele 9
BD - Bangladesh 8
EC - Ecuador 8
FI - Finlandia 8
SA - Arabia Saudita 7
ID - Indonesia 6
ES - Italia 5
KE - Kenya 5
VE - Venezuela 5
CL - Cile 4
JM - Giamaica 4
LT - Lituania 4
RU - Federazione Russa 4
BE - Belgio 3
EG - Egitto 3
MX - Messico 3
MY - Malesia 3
PH - Filippine 3
PL - Polonia 3
PT - Portogallo 3
UA - Ucraina 3
ZA - Sudafrica 3
BA - Bosnia-Erzegovina 2
BB - Barbados 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
IE - Irlanda 2
IQ - Iraq 2
SE - Svezia 2
TN - Tunisia 2
TR - Turchia 2
TW - Taiwan 2
UY - Uruguay 2
UZ - Uzbekistan 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
BG - Bulgaria 1
BH - Bahrain 1
BS - Bahamas 1
CR - Costa Rica 1
CY - Cipro 1
DZ - Algeria 1
HN - Honduras 1
LB - Libano 1
MA - Marocco 1
NP - Nepal 1
PK - Pakistan 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 2.370
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Città #
Santa Clara 313
Singapore 268
San Jose 176
Hefei 135
Hong Kong 94
Ashburn 67
Seoul 56
Lauterbourg 45
Ho Chi Minh City 44
Los Angeles 38
Beijing 37
Hanoi 26
Tokyo 15
Buffalo 10
Rio de Janeiro 10
Dallas 9
Minamishinagawa 9
São Paulo 9
Helsinki 8
Bengaluru 7
Frankfurt am Main 7
Chicago 6
Guayaquil 6
Haiphong 6
London 6
Ottawa 6
Atlanta 5
Belo Horizonte 5
Charlotte 5
Da Nang 5
Nairobi 5
New York 5
Philadelphia 5
Porto Alegre 5
Guangzhou 4
Guarulhos 4
Houston 4
Jeddah 4
Orem 4
Parma 4
Phoenix 4
Bogotá 3
Brasília 3
Brussels 3
Chengdu 3
Curitiba 3
Jacksonville 3
Kingston 3
Miami 3
Paços de Ferreira 3
Santiago 3
Stuttgart 3
Toronto 3
Warsaw 3
Addis Ababa 2
Alliance 2
Amsterdam 2
Balch Springs 2
Baoding 2
Bloomfield 2
Bình Dương 2
Campinas 2
Canton 2
Carapicuíba 2
Catania 2
Caxias do Sul 2
Cincinnati 2
Covina 2
Crawfordville 2
Detroit 2
Dhaka 2
Elk Grove Village 2
Fortaleza 2
Foshan 2
Goiânia 2
Gualala 2
Hải Dương 2
Johannesburg 2
Knoxville 2
Kuala Lumpur 2
Kyiv 2
Lexington 2
Lilburn 2
Livonia 2
Milan 2
Minneapolis 2
Montevideo 2
Montreal 2
Mumbai 2
Nanjing 2
New Delhi 2
Ninh Bình 2
Osasco 2
Pittsburgh 2
Pouso Alegre 2
Quận Một 2
Rocky Mount 2
Rome 2
San Juan 2
Sand Springs 2
Totale 1.612
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Nome #
Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon 97
DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry 90
On the role of the static Debye-Waller factor in X-ray rocking curve analysis 77
The problem of convolution in the simulation of multicrystal X-ray rocking curves of semiconductor materials 70
Nano-graphene texturing by ArF pulsed laser ablation of graphite 68
Influence of substrate temperature and atmosphere on nano-graphene formation and texturing of pulsed Nd:YAG laser-deposited carbon films 66
A Bragg silicon lattice comparator 65
X-ray characterization of Si microstructures with high spatial resolution 63
Influence of temperature on nano-graphene structuring of PLD grown carbon films - An X-ray diffraction study 56
Critical role of laser wavelength on carbon films grown by PLD of graphite 56
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 54
Nano-graphene structures deposited by N-IR pulsed laser ablation of graphite on Si 52
Nano-graphene growth and texturing by Nd:YAG pulsed laser ablation of graphite on silicon 50
Ion Implantation at Ultra-Low Energy for Future Semiconductor Devices 49
Morphology, structure and density evolution of carbon nano-structures deposited by N-IR pulsed laser ablation of graphite 49
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 48
Role of growth temperature on nanostructure and field emission properties of PLD thin carbon films 48
Laser annealing of amorphous carbon films 47
Static disorder in Si1-xGex alloys and in silicon on insulator structures 46
Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing 46
Synchrotron X-ray investigation of tetracene thin films grown at different deposition fluxes 46
X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC 45
Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods 44
Influence of temperature on nano-graphene structuring of PLD grown carbon films. An X-ray diffraction study 43
X-Ray Diffraction Study of Confined Porous Silicon Membranes 42
ANNEALING OF PHOSPHORUS IMPLANTED SILICONWAFERS BY MULTISCANNING ELECTRON-BEAM - SOLAR-CELLS APPLICATION 41
X-Ray Synchrotron Topography Investigation of Porous Silicon Formed by Patterning in Localized Areas 40
ION-IMPLANTATION OF SILICON IN GALLIUM-ARSENIDE - DAMAGE AND ANNEALING CHARACTERIZATIONS 37
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 36
Rutherford backscattering studies of ion implanted semiconductors 36
X-ray rocking-curve analysis of crystals with buried amorphous layers. Case of ion-implanted silicon 36
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 36
Determination by high-resolution X-ray diffraction of shape, size and lateral separation of buried empty channels in silicon-on-nothing architectures 35
X-RAY DETERMINATION OF LATTICE DAMAGE DEPTHPROFILES DUE TO ELECTRONIC AND NUCLEAR-ENERGY LOSSES IN SILICON IMPLANTED WITH MEV BORON IONS 34
Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield 34
X-ray diffraction imaging investigation of silicon carbide on insulator structures 34
3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II. Curved sample 33
XRD and TEM analysis of textural nano-graphene films deposited by Nd:YAG pulsed laser ablation of graphite 33
Damage in ion implanted silicon measured by x-ray diffraction 33
Bragg-Case X-ray interference in multilayered structures. Comparison between kinematical approximation and dynamical treatment 32
Investigation of Czochralski Silicon Grown with Different Interstitial Oxygen Concentrations and Point Defect Populations 31
Influence of the electrolyte viscosity on the structural features of porous silicon 30
Characterization of lattice defects in ion-implanted silicon 30
Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering 30
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 30
Porous silicon characterization by x-ray reflectivity: problems arising from using a vacuum environment with synchrotron beam 29
STRUCTURAL CHARACTERIZATION OF SUPERCONDUCTING YBA2CU3OX FILMS GROWN BY PULSED LASER ABLATION 29
Depth profiling of the lateral pore size and correlation distance in thin porous silicon layers by grazing incidence small angle X-ray scattering 29
TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION 29
Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys 29
PRE-AMORPHIZATION DAMAGE STUDY IN AS-IMPLANTED SILICON 27
High-resolution X-ray diffraction of silicon-on-nothing 26
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose 26
Vertically oriented nano-graphene structures deposited by Nd:YAG pulsed laser ablation of graphite 24
Erratum: Damage profiles in as-implanted (100) Si crystals: Strain by X-ray diffractometry versus interstitials by RBS-channeling (Nucl. Instr. and Meth. B vol 120, pg 64, 1996) 24
Totale 2.370
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Categoria #
all - tutte 7.652
article - articoli 6.087
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 244
Totale 13.983
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20246 0 0 0 0 0 0 0 0 3 0 3 0
2024/2025846 1 3 59 34 254 79 5 26 4 12 193 176
2025/20261.284 68 121 93 198 276 44 173 130 92 43 35 11
2026/2027234 64 51 119 0 0 0 0 0 0 0 0 0
Totale 2.370