CNR Institutional Research Information System

SERVIDORI, MARCO
 Distribuzione geografica
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Continente #
AS - Asia 45
NA - Nord America 19
EU - Europa 5
Totale 69
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Nazione #
SG - Singapore 41
US - Stati Uniti d'America 19
CN - Cina 3
IT - Italia 3
GB - Regno Unito 1
KR - Corea 1
NL - Olanda 1
Totale 69
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Città #
Singapore 32
Santa Clara 6
Parma 3
Guangzhou 2
Amsterdam 1
London 1
Seoul 1
Totale 46
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Nome #
DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry 5
Laser annealing of amorphous carbon films 3
Rutherford backscattering studies of ion implanted semiconductors 3
Morphology, structure and density evolution of carbon nano-structures deposited by N-IR pulsed laser ablation of graphite 3
Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon 2
On the role of the static Debye-Waller factor in X-ray rocking curve analysis 2
Erratum: Damage profiles in as-implanted (100) Si crystals: Strain by X-ray diffractometry versus interstitials by RBS-channeling (Nucl. Instr. and Meth. B vol 120, pg 64, 1996) 2
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 2
X-Ray Diffraction Study of Confined Porous Silicon Membranes 2
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 2
Ion Implantation at Ultra-Low Energy for Future Semiconductor Devices 2
Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods 2
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 2
Nano-graphene growth and texturing by Nd:YAG pulsed laser ablation of graphite on silicon 2
Role of growth temperature on nanostructure and field emission properties of PLD thin carbon films 2
Role of growth temperature on nanostructure and field emission properties of PLD thin carbon films 2
X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC 2
Synchrotron X-ray investigation of tetracene thin films grown at different deposition fluxes 2
A Bragg silicon lattice comparator 1
Nano-graphene texturing by ArF pulsed laser ablation of graphite 1
Influence of substrate temperature and atmosphere on nano-graphene formation and texturing of pulsed Nd:YAG laser-deposited carbon films 1
Influence of temperature on nano-graphene structuring of PLD grown carbon films - An X-ray diffraction study 1
3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II. Curved sample 1
Influence of temperature on nano-graphene structuring of PLD grown carbon films. An X-ray diffraction study 1
Vertically oriented nano-graphene structures deposited by Nd:YAG pulsed laser ablation of graphite 1
STRUCTURAL CHARACTERIZATION OF SUPERCONDUCTING YBA2CU3OX FILMS GROWN BY PULSED LASER ABLATION 1
X-Ray Synchrotron Topography Investigation of Porous Silicon Formed by Patterning in Localized Areas 1
X-ray characterization of Si microstructures with high spatial resolution 1
Bragg-Case X-ray interference in multilayered structures. Comparison between kinematical approximation and dynamical treatment 1
Characterization of lattice defects in ion-implanted silicon 1
X-ray rocking-curve analysis of crystals with buried amorphous layers. Case of ion-implanted silicon 1
ION-IMPLANTATION OF SILICON IN GALLIUM-ARSENIDE - DAMAGE AND ANNEALING CHARACTERIZATIONS 1
Depth profiling of the lateral pore size and correlation distance in thin porous silicon layers by grazing incidence small angle X-ray scattering 1
Nano-graphene structures deposited by N-IR pulsed laser ablation of graphite on Si 1
X-RAY DETERMINATION OF LATTICE DAMAGE DEPTHPROFILES DUE TO ELECTRONIC AND NUCLEAR-ENERGY LOSSES IN SILICON IMPLANTED WITH MEV BORON IONS 1
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose 1
Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering 1
Critical role of laser wavelength on carbon films grown by PLD of graphite 1
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 1
Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield 1
Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing 1
TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION 1
Determination by high-resolution X-ray diffraction of shape, size and lateral separation of buried empty channels in silicon-on-nothing architectures 1
X-ray diffraction imaging investigation of silicon carbide on insulator structures 1
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 1
Totale 69
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Categoria #
all - tutte 797
article - articoli 633
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 33
Totale 1.463
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20246 0 0 0 0 0 0 0 0 3 0 3 0
2024/202563 1 3 59 0 0 0 0 0 0 0 0 0
Totale 69