CNR Institutional Research Information System

SERVIDORI, MARCO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 1.092
NA - Nord America 727
SA - Sud America 165
EU - Europa 146
AF - Africa 18
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 2.150
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 705
SG - Singapore 461
CN - Cina 273
BR - Brasile 138
VN - Vietnam 112
HK - Hong Kong 100
KR - Corea 57
FR - Francia 51
JP - Giappone 25
IN - India 23
GB - Regno Unito 17
CA - Canada 14
NL - Olanda 13
DE - Germania 12
IT - Italia 12
AR - Argentina 9
IL - Israele 9
FI - Finlandia 8
SA - Arabia Saudita 7
EC - Ecuador 6
ES - Italia 5
ID - Indonesia 5
KE - Kenya 5
LT - Lituania 5
RU - Federazione Russa 4
BD - Bangladesh 3
BE - Belgio 3
CL - Cile 3
CO - Colombia 3
EG - Egitto 3
IQ - Iraq 3
MX - Messico 3
PH - Filippine 3
PL - Polonia 3
PT - Portogallo 3
TN - Tunisia 3
VE - Venezuela 3
ZA - Sudafrica 3
BA - Bosnia-Erzegovina 2
BB - Barbados 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
IE - Irlanda 2
SE - Svezia 2
TR - Turchia 2
TW - Taiwan 2
UA - Ucraina 2
UY - Uruguay 2
UZ - Uzbekistan 2
AU - Australia 1
BH - Bahrain 1
CY - Cipro 1
DZ - Algeria 1
JM - Giamaica 1
MA - Marocco 1
NP - Nepal 1
PK - Pakistan 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 2.150
Salva come PNG Salva come JPEG
Città #
Santa Clara 315
Singapore 268
San Jose 162
Hefei 135
Hong Kong 97
Seoul 56
Lauterbourg 45
Ho Chi Minh City 43
Ashburn 41
Beijing 38
Los Angeles 37
Hanoi 26
Tokyo 15
Rio de Janeiro 10
Buffalo 9
Dallas 9
Minamishinagawa 9
São Paulo 9
Helsinki 8
Bengaluru 7
Frankfurt am Main 7
Haiphong 6
London 6
Ottawa 6
Belo Horizonte 5
Da Nang 5
Guayaquil 5
Nairobi 5
New York 5
Porto Alegre 5
Chicago 4
Guangzhou 4
Guarulhos 4
Jeddah 4
Orem 4
Parma 4
Toronto 4
Brussels 3
Chengdu 3
Paços de Ferreira 3
Phoenix 3
Stuttgart 3
Warsaw 3
Addis Ababa 2
Amsterdam 2
Baoding 2
Bình Dương 2
Campinas 2
Canton 2
Carapicuíba 2
Caxias do Sul 2
Charlotte 2
Curitiba 2
Elk Grove Village 2
Foshan 2
Goiânia 2
Hải Dương 2
Johannesburg 2
Kyiv 2
Miami 2
Montevideo 2
Montreal 2
Mumbai 2
Nanjing 2
New Delhi 2
Ninh Bình 2
Osasco 2
Philadelphia 2
Pittsburgh 2
Pouso Alegre 2
Quận Một 2
San Juan 2
Santiago 2
Shanghai 2
Sorocaba 2
Stockholm 2
Stoke-on-Trent 2
The Bronx 2
The Dalles 2
Thái Nguyên 2
Tunis 2
Valença 2
Abadia de Goiás 1
Acerra 1
Alexandria 1
Annapolis 1
Anniston 1
Araripina 1
Araruama 1
Araxá 1
Araçuaí 1
Armação dos Búzios 1
Arthès 1
Asunción 1
Atlanta 1
Azcapotzalco 1
Baghdad 1
Bakersfield 1
Balsas 1
Bandung 1
Totale 1.536
Salva come PNG Salva come JPEG
Nome #
Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon 89
DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry 84
On the role of the static Debye-Waller factor in X-ray rocking curve analysis 75
The problem of convolution in the simulation of multicrystal X-ray rocking curves of semiconductor materials 65
Nano-graphene texturing by ArF pulsed laser ablation of graphite 64
Influence of substrate temperature and atmosphere on nano-graphene formation and texturing of pulsed Nd:YAG laser-deposited carbon films 64
A Bragg silicon lattice comparator 61
X-ray characterization of Si microstructures with high spatial resolution 56
Influence of temperature on nano-graphene structuring of PLD grown carbon films - An X-ray diffraction study 53
Nano-graphene growth and texturing by Nd:YAG pulsed laser ablation of graphite on silicon 46
Critical role of laser wavelength on carbon films grown by PLD of graphite 46
Static disorder in Si1-xGex alloys and in silicon on insulator structures 45
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 44
Laser annealing of amorphous carbon films 42
Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods 42
Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing 42
Influence of temperature on nano-graphene structuring of PLD grown carbon films. An X-ray diffraction study 41
Nano-graphene structures deposited by N-IR pulsed laser ablation of graphite on Si 41
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 41
Synchrotron X-ray investigation of tetracene thin films grown at different deposition fluxes 41
Morphology, structure and density evolution of carbon nano-structures deposited by N-IR pulsed laser ablation of graphite 41
X-Ray Diffraction Study of Confined Porous Silicon Membranes 40
Role of growth temperature on nanostructure and field emission properties of PLD thin carbon films 39
X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC 39
Ion Implantation at Ultra-Low Energy for Future Semiconductor Devices 38
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 35
X-Ray Synchrotron Topography Investigation of Porous Silicon Formed by Patterning in Localized Areas 33
Rutherford backscattering studies of ion implanted semiconductors 32
X-ray rocking-curve analysis of crystals with buried amorphous layers. Case of ion-implanted silicon 32
ION-IMPLANTATION OF SILICON IN GALLIUM-ARSENIDE - DAMAGE AND ANNEALING CHARACTERIZATIONS 32
Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield 32
3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II. Curved sample 31
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 31
X-ray diffraction imaging investigation of silicon carbide on insulator structures 31
Determination by high-resolution X-ray diffraction of shape, size and lateral separation of buried empty channels in silicon-on-nothing architectures 30
Bragg-Case X-ray interference in multilayered structures. Comparison between kinematical approximation and dynamical treatment 29
Characterization of lattice defects in ion-implanted silicon 29
ANNEALING OF PHOSPHORUS IMPLANTED SILICONWAFERS BY MULTISCANNING ELECTRON-BEAM - SOLAR-CELLS APPLICATION 29
Damage in ion implanted silicon measured by x-ray diffraction 29
Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering 29
X-RAY DETERMINATION OF LATTICE DAMAGE DEPTHPROFILES DUE TO ELECTRONIC AND NUCLEAR-ENERGY LOSSES IN SILICON IMPLANTED WITH MEV BORON IONS 28
XRD and TEM analysis of textural nano-graphene films deposited by Nd:YAG pulsed laser ablation of graphite 28
Role of growth temperature on nanostructure and field emission properties of PLD thin carbon films 28
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 28
Influence of the electrolyte viscosity on the structural features of porous silicon 27
Porous silicon characterization by x-ray reflectivity: problems arising from using a vacuum environment with synchrotron beam 27
Depth profiling of the lateral pore size and correlation distance in thin porous silicon layers by grazing incidence small angle X-ray scattering 27
Investigation of Czochralski Silicon Grown with Different Interstitial Oxygen Concentrations and Point Defect Populations 26
STRUCTURAL CHARACTERIZATION OF SUPERCONDUCTING YBA2CU3OX FILMS GROWN BY PULSED LASER ABLATION 25
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose 25
Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys 25
PRE-AMORPHIZATION DAMAGE STUDY IN AS-IMPLANTED SILICON 24
TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION 24
High-resolution X-ray diffraction of silicon-on-nothing 23
Vertically oriented nano-graphene structures deposited by Nd:YAG pulsed laser ablation of graphite 22
Erratum: Damage profiles in as-implanted (100) Si crystals: Strain by X-ray diffractometry versus interstitials by RBS-channeling (Nucl. Instr. and Meth. B vol 120, pg 64, 1996) 20
Totale 2.150
Salva come PNG Salva come JPEG
Categoria #
all - tutte 6.318
article - articoli 5.034
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 198
Totale 11.550
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20246 0 0 0 0 0 0 0 0 3 0 3 0
2024/2025861 1 3 61 34 259 81 5 28 4 12 195 178
2025/20261.283 69 121 93 199 281 46 175 130 94 43 32 0
Totale 2.150