BRUNI, MARIA RITA
BRUNI, MARIA RITA
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Optical properties of stepped InxGa1-xAs/GaAs quantum wells
1998 D'Andrea, A; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, Mr; Schiumarini, D; Simeone, Mg
Optical properties of stepped InxGa1-xAs/GaAs quantum wells
1998 D'Andrea, A; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, Mr; Schiumarini, D; Simeone, Mg
Second harmonic generation in stepped InAsGaAs/GaAs quantum wells
1997 D'Andrea, A ; Tomassini, N ; Ferrari, L ; Righini, M ; Selci, S ; Bruni, MR ; Schiumarini, D ; Simeone, MG
Growth and characterization of strained III-V heterostructures
1996 M.R. Bruni; N. Gambacorti; S. Kaciulis; G. Mattogno; M.G. Simeone
Interface abruptness in strained III-V heterostructures
1996 Bruni, Mr; Kaciulis, S; Mattogno, G; Righini, G
Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells
1996 Bruni, Mr; Gambacorti, N; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S
Depth profiling of InxGa1-xAs/GaAs quantum wells
1995 M.R. Bruni; S. Kaciulis; F. Martelli; G. Mattogno; M.G. Simeone; G. Treideris; S. Viticoli
Exciton states in InxGa1-x As/GaAs double quantum wells: Normalized reflection spectra
1995 D'Andrea, Andrea; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, MARIA RITA; M, R; Simeoni, ; G,
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films
1995 Romanato, Filippo; Vittorio Drigo, Antonio; Francesio, Laura; Franzosi, Paolo; Lazzarini, Laura; Salviati, Giancarlo; Mazzer, Massimo; Bruni, MARIA RITA; Grazia Simeone, Maria
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films
1995 Romanato F; Drigo; AV; Francesio L; Franzosi P; Lazzarini L; Salviati G; Mazzer M; Bruni; MR; Simeone; MG
NORMALIZED REFLECTION SPECTRA IN GAAS/INXGA(1-X) AS SINGLE QUANTUM-WELLS - STRUCTURE CHARACTERIZATIONS AND EXCITONIC PROPERTIES
1995 DANDREA, A ; TOMASSINI, N ; FERRARI, L ; RIGHINI, M ; SELCI, S ; BRUNI, MR ; SIMEONE, MG ; GAMBACORTI, N
Normalized reflection spectra in InxGa1-xAs/GaAs strained quantum wells: Structure and electronic properties
1995 D'Andrea A;Tomassini N;Ferrari L;Righini M;Selci S;Bruni; M R;Simeone; M G
Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E.
1995 G Quagliano, L; Simeone, ; Bruni, Mr; Gambacorti, N; Mzugarini,
Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures
1995 M.R. Bruni; N. Gambacorti; S. Kaciulis; G. Mattogno; M.G. Simeone; L.G. Quagliano; N. Tomassini; B. Juserand
DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
1994 Bruni, Mr; Gambacorti, N; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S
Depth profiling of InxGa1-xAs/GaAs quantum wells
1994 M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone; S. Viticoli; F. Martelli
Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures
1994 Ferrari, C; Franzosi, P; Lazzarini, L; Salviati, G; Berti, M; Drigo, Av; Mazzer, M; Romanato, F; Bruni, Mr; Simeone, Mg
Transmission electron microscopy, high resolution x-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layer
1994 Salviati, G; Lazzarini, L; Ferrari, C; Franzosi, P; Milita, S; Romanato, F; Berti, M; Mazzer, M; Drigo, Av; Bruni, Mr; Simeone, Mg; Gambacorti, N
XPS and AES characterization of InP substrates for epitaxial growth
1994 M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone
Depth profiling of InxGa1-xAs/GaAs superlattice
1993 Bruni, Mr; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S; Martelli, F
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Optical properties of stepped InxGa1-xAs/GaAs quantum wells | 1-gen-1998 | D'Andrea, A; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, Mr; Schiumarini, D; Simeone, Mg | |
Optical properties of stepped InxGa1-xAs/GaAs quantum wells | 1-gen-1998 | D'Andrea, A; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, Mr; Schiumarini, D; Simeone, Mg | |
Second harmonic generation in stepped InAsGaAs/GaAs quantum wells | 1-gen-1997 | D'Andrea, A ; Tomassini, N ; Ferrari, L ; Righini, M ; Selci, S ; Bruni, MR ; Schiumarini, D ; Simeone, MG | |
Growth and characterization of strained III-V heterostructures | 1-gen-1996 | M.R. Bruni; N. Gambacorti; S. Kaciulis; G. Mattogno; M.G. Simeone | |
Interface abruptness in strained III-V heterostructures | 1-gen-1996 | Bruni, Mr; Kaciulis, S; Mattogno, G; Righini, G | |
Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells | 1-gen-1996 | Bruni, Mr; Gambacorti, N; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S | |
Depth profiling of InxGa1-xAs/GaAs quantum wells | 1-gen-1995 | M.R. Bruni; S. Kaciulis; F. Martelli; G. Mattogno; M.G. Simeone; G. Treideris; S. Viticoli | |
Exciton states in InxGa1-x As/GaAs double quantum wells: Normalized reflection spectra | 1-gen-1995 | D'Andrea, Andrea; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, MARIA RITA; M, R; Simeoni, ; G, | |
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films | 1-gen-1995 | Romanato, Filippo; Vittorio Drigo, Antonio; Francesio, Laura; Franzosi, Paolo; Lazzarini, Laura; Salviati, Giancarlo; Mazzer, Massimo; Bruni, MARIA RITA; Grazia Simeone, Maria | |
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films | 1-gen-1995 | Romanato F; Drigo; AV; Francesio L; Franzosi P; Lazzarini L; Salviati G; Mazzer M; Bruni; MR; Simeone; MG | |
NORMALIZED REFLECTION SPECTRA IN GAAS/INXGA(1-X) AS SINGLE QUANTUM-WELLS - STRUCTURE CHARACTERIZATIONS AND EXCITONIC PROPERTIES | 1-gen-1995 | DANDREA, A ; TOMASSINI, N ; FERRARI, L ; RIGHINI, M ; SELCI, S ; BRUNI, MR ; SIMEONE, MG ; GAMBACORTI, N | |
Normalized reflection spectra in InxGa1-xAs/GaAs strained quantum wells: Structure and electronic properties | 1-gen-1995 | D'Andrea A;Tomassini N;Ferrari L;Righini M;Selci S;Bruni; M R;Simeone; M G | |
Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E. | 1-gen-1995 | G Quagliano, L; Simeone, ; Bruni, Mr; Gambacorti, N; Mzugarini, | |
Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures | 1-gen-1995 | M.R. Bruni; N. Gambacorti; S. Kaciulis; G. Mattogno; M.G. Simeone; L.G. Quagliano; N. Tomassini; B. Juserand | |
DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY | 1-gen-1994 | Bruni, Mr; Gambacorti, N; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S | |
Depth profiling of InxGa1-xAs/GaAs quantum wells | 1-gen-1994 | M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone; S. Viticoli; F. Martelli | |
Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures | 1-gen-1994 | Ferrari, C; Franzosi, P; Lazzarini, L; Salviati, G; Berti, M; Drigo, Av; Mazzer, M; Romanato, F; Bruni, Mr; Simeone, Mg | |
Transmission electron microscopy, high resolution x-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layer | 1-gen-1994 | Salviati, G; Lazzarini, L; Ferrari, C; Franzosi, P; Milita, S; Romanato, F; Berti, M; Mazzer, M; Drigo, Av; Bruni, Mr; Simeone, Mg; Gambacorti, N | |
XPS and AES characterization of InP substrates for epitaxial growth | 1-gen-1994 | M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone | |
Depth profiling of InxGa1-xAs/GaAs superlattice | 1-gen-1993 | Bruni, Mr; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S; Martelli, F |