Four different Schottky diode edge terminations have been fabricated on 6H SiC. The metal contact was Ni2Si in all the structures and the epitaxial layer has a carrier concentrations of 3?ó1015cm -3 and a thickness of 4 microns. With these characteristics of the epitaxial layer, the ideal breakdown voltages should be 800 V. In the best structure an edge efficiency of about the 95% has been reached. The comparison between the experimental and the simulated results shows that, when the breakdown is not influenced by defects present in the substrate, a good agreement with the simulation can be reached.
Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
La Via F;Roccaforte F;Di Franco S;Raineri V;Moscatelli F;Cardinali GC
2003
Abstract
Four different Schottky diode edge terminations have been fabricated on 6H SiC. The metal contact was Ni2Si in all the structures and the epitaxial layer has a carrier concentrations of 3?ó1015cm -3 and a thickness of 4 microns. With these characteristics of the epitaxial layer, the ideal breakdown voltages should be 800 V. In the best structure an edge efficiency of about the 95% has been reached. The comparison between the experimental and the simulated results shows that, when the breakdown is not influenced by defects present in the substrate, a good agreement with the simulation can be reached.File in questo prodotto:
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