Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans along different structures reveal similar trends of the TO mode Raman Shift. We have found that, independently of the microstructure considered, the Raman frequency decreases close to the undercut. We compare our experimental measurements with FEM simulations finding that, close to the undercut, the stress tensor becomes non-diagonal, modifying the Raman shift to stress relation.
Raman stress characterization of hetero-epitaxial 3C-SiC free standing structures
Piluso N;Anzalone R;La Magna A;D'Arrigo G;La Via;
2011
Abstract
Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans along different structures reveal similar trends of the TO mode Raman Shift. We have found that, independently of the microstructure considered, the Raman frequency decreases close to the undercut. We compare our experimental measurements with FEM simulations finding that, close to the undercut, the stress tensor becomes non-diagonal, modifying the Raman shift to stress relation.File in questo prodotto:
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