This paper reports on the influence of the processing conditions on the behaviour of 4H-SiC MOSFETs. The impact of the SiC surface morphology (i.e., processing-induced roughness) and the effects of different post-deposition-annealing (PDA) of the gate oxide in N2O or POCl3 on the channel mobility are discussed.
Influence of processing conditions on the behaviour of 4H-SiC MOSFETs
F Roccaforte;P Fiorenza;F Giannazzo;M Vivona;
2013
Abstract
This paper reports on the influence of the processing conditions on the behaviour of 4H-SiC MOSFETs. The impact of the SiC surface morphology (i.e., processing-induced roughness) and the effects of different post-deposition-annealing (PDA) of the gate oxide in N2O or POCl3 on the channel mobility are discussed.File in questo prodotto:
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