In this paper, the structural and electrical evolution Ti- and Ta-based Ohmic contacts on AlGaN/GaN heterostructures upon annealing has been monitored. In particular, a comparison between Ta/Al and Ti/Al stacks was done, correlating the Ohmic behavior to the formation of new phases occurring respectively at 700 °C and 500 °C. The different electrical behavior has been discussed considering the interface microstructure.
Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures
G Greco;F Giannazzo;R Lo Nigro;S Scalese;F Roccaforte
2013
Abstract
In this paper, the structural and electrical evolution Ti- and Ta-based Ohmic contacts on AlGaN/GaN heterostructures upon annealing has been monitored. In particular, a comparison between Ta/Al and Ti/Al stacks was done, correlating the Ohmic behavior to the formation of new phases occurring respectively at 700 °C and 500 °C. The different electrical behavior has been discussed considering the interface microstructure.File in questo prodotto:
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