The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2> 0.05) and an increase of the growth rate until about 20 ì m/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2%) with respect to the standard process without HCl.
New achievements on CVD based methods for SIC epitaxial growth
Roccaforte F;Giannazzo F;Di Franco S;La Via F
2005
Abstract
The results of a new epitaxial process using an industrial 6x2" wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2> 0.05) and an increase of the growth rate until about 20 ì m/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2%) with respect to the standard process without HCl.File in questo prodotto:
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