ARMANI, NICOLA
 Distribuzione geografica
Continente #
NA - Nord America 446
AS - Asia 122
EU - Europa 18
AF - Africa 2
Totale 588
Nazione #
US - Stati Uniti d'America 445
SG - Singapore 99
CN - Cina 14
FI - Finlandia 9
KR - Corea 4
IT - Italia 3
CH - Svizzera 2
DE - Germania 2
IN - India 2
MA - Marocco 2
SE - Svezia 2
AM - Armenia 1
CA - Canada 1
CY - Cipro 1
IL - Israele 1
Totale 588
Città #
Santa Clara 416
Singapore 70
Helsinki 9
Guangzhou 5
Seoul 4
Falkenstein 2
Phoenix 2
Stockholm 2
Zurich 2
Boardman 1
Haifa 1
Messina 1
Milan 1
New York 1
Nicosia 1
Rabat 1
Rome 1
Toronto 1
Yerevan 1
Totale 522
Nome #
15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition 12
Investigation of the recombination dynamics in low in-content InGaN MQWs by means of cathodoluminescence and photo-luminescence excitation 12
Ion irradiation induced formation of CdO microcrystals on CdTe surfaces 11
High temperature properties of CdTe crystals doped by Sb 11
Results on MOVPE SiGeSn deposition for the monolithic integration of III-V and IV elements in multi-junction solar cells 11
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 11
Celle solari a film sottili basate su semiconduttori composti 11
A study of the CdTe treatment with a freon gas such as CHF2Cl 10
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect 10
Effects of Chemical Treatment on the Luminescence of ZnO 10
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors 9
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering 9
Growth and characterization of RGB cathodoluminescent ceramic films 9
Epitaxial germanium for photovoltaic or opto-electronic applications 9
Excitonic recombination in superstoichiometric nanocrystalline TiO2 grown by cluster precursors at room temperature 9
Influence of the stoichiometry deviation on the structural and optical properties of CdTe crystals 9
Electrical and optical properties of defects in proton-irradiated gan epilayers 9
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 9
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 9
Al.LES: a random walk simulation approach to luminescence processes in semiconductors 9
Simulation of the cathodoluminescence processes in semiconductors 9
Accelerated DC-aging of InGaN LEDs: effects on electrical and optical properties 9
Germanium homoepitaxial cells for thermophotovoltaic systems 8
Low-temperature germanium thin films on silicon 8
Nuove tecnologie e strumenti per l'efficienza energerica e l'utilizzo delle fonti rinnovabili negli usi finali civili 8
Relazione sulle attività completate nel 4° semestre, periodo 20/09/2009-20/02/2010 del progetto 1 8
Crystal defects and optical transition in high purity, high resistivity cdte for device applications 8
Stoichiometry related defects in CdTe crystals 8
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering 8
Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterization 8
Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers 8
Optical and structural characterization of CdTe crystals grown by PVT and Bridgman methods 8
Thin film composition determination by means of integrated intensity measurements 8
HEMT ad alta mobilità e ad altissima larghezza di banda 8
Investigations of 0.9 eV cathodoluminescence emission in GaAs 8
Thermal Processing and Characterizations of Dye-Sensitized Solar Cells Based on Nanostructured TiO2 8
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 8
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 8
Stoichiometry related defects in CdTe crystals 8
Influence of the materials properties on photovoltaic device performances 8
High Resistivity Cadmium Telluride Grown by Boron Oxide Capping Bridgman Technique 8
Hydride vapour phase epitaxy growth and characterization of GaN layers 8
Controlled band gap modulation of hydrogenated diluted nitrides by SEM- Cathodoluminescence 8
Defects induced luminescence in high resistivity high purity undoped cdte crystals 8
Influence of the Fluorine doping on the optical properties of CdS thin films for photovoltaic applications 8
Defect-induced luminescence in high resistivity high-purity undoped CdTe crystals 8
Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization 8
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 7
Controlled in-plane band gap modulation by electron beam steering in hydrogenated GaAsN and GaPN layers 7
Nanospettroscopia ottica quantitativa ad alta risoluzione laterale ed in profondità 7
Al.L.E.S.: A random walk simulation approach to cathodoluminescence processes in semiconductors 7
Influence of the Fluorine doping on the optical properties of CdS thin films for photovoltaic applications 7
Optical and structural characterization of self-organized stacked GaN/AlN quantum dots 7
Relazione tecnica semestrale, periodo dal 01.01.2006 al 30.06.2006 relativa al Laboratorio Energia - ERG - Obiettivo realizzativo 6: energia fotovoltaica dal titolo 7
Narrow, deep level cathodoluminescence emission from semi-insulating GaAs 7
Interface properties of HCF2Cl annealed CdTe thin films for solar cells applications 7
Role of thermal treatment on the luminescence properties of CdTe thin films for photovoltaic applications 7
The role of Mg complexes in the degradation of InGaN-based LEDs 7
Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN 7
Spettroscopia ottica in microscopia elettronica mediante catodoluminescenza applicata a nanostrutture di semiconduttori 7
Role of thermal treatment on the luminescence properties of CdTe thin films for photovoltaic applications 7
Effects of thermal annealing on gan epilayers deposited on (0001) sapphire 7
Optical and structural characterization of GaN/AlN quantum dots 7
Cathodoluminescence and Micro-Raman Characterisation of GaN/AlN QDs Grown on Si (111) 7
Characterization of gan-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 7
Selective area growth of GaInNAs/GaAs by MOVPE 7
Study of point defects in dilute nitrides by electron beam irradiation and cathodoluminescence 7
Thin film composition determination by means of integrated intensity measurements 7
Materiali e dispositivi per generatori termofotovoltaici 7
Polarization field effects on the recombination dynamics in low In-content InGaN multi-quantum wells 7
Indium distribution and influence of internal fields in InGaN quantum wells 7
Luminescence properties of CZT crystals in the presence of tellurium inclusions 7
Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation 6
Totale 598
Categoria #
all - tutte 2.299
article - articoli 1.106
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 156
Totale 3.561


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202421 0 0 0 0 0 0 0 0 0 2 18 1
2024/2025577 3 4 70 39 340 83 14 24 0 0 0 0
Totale 598