ARMANI, NICOLA
 Distribuzione geografica
Continente #
AS - Asia 1.244
NA - Nord America 829
SA - Sud America 274
EU - Europa 201
AF - Africa 14
OC - Oceania 1
Totale 2.563
Nazione #
US - Stati Uniti d'America 793
SG - Singapore 539
CN - Cina 272
BR - Brasile 222
HK - Hong Kong 138
VN - Vietnam 133
FR - Francia 75
KR - Corea 42
IN - India 29
JP - Giappone 27
IT - Italia 25
GB - Regno Unito 17
AR - Argentina 16
CA - Canada 16
DE - Germania 16
FI - Finlandia 14
NL - Olanda 14
ID - Indonesia 10
IQ - Iraq 10
IL - Israele 8
PE - Perù 8
EC - Ecuador 7
MX - Messico 7
CO - Colombia 6
PY - Paraguay 6
BD - Bangladesh 5
AE - Emirati Arabi Uniti 4
CH - Svizzera 4
SA - Arabia Saudita 4
SE - Svezia 4
UZ - Uzbekistan 4
CL - Cile 3
JM - Giamaica 3
LV - Lettonia 3
MA - Marocco 3
PL - Polonia 3
VE - Venezuela 3
ZA - Sudafrica 3
AM - Armenia 2
AZ - Azerbaigian 2
BG - Bulgaria 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
EG - Egitto 2
GR - Grecia 2
HU - Ungheria 2
IE - Irlanda 2
PA - Panama 2
PK - Pakistan 2
RS - Serbia 2
RU - Federazione Russa 2
TR - Turchia 2
UA - Ucraina 2
UY - Uruguay 2
AL - Albania 1
AT - Austria 1
AU - Australia 1
BH - Bahrain 1
CY - Cipro 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EE - Estonia 1
ES - Italia 1
ET - Etiopia 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
IR - Iran 1
JO - Giordania 1
KE - Kenya 1
KN - Saint Kitts e Nevis 1
LT - Lituania 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
MT - Malta 1
MW - Malawi 1
MY - Malesia 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PH - Filippine 1
RO - Romania 1
SR - Suriname 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TG - Togo 1
TN - Tunisia 1
TW - Taiwan 1
Totale 2.563
Città #
Santa Clara 419
Singapore 308
Hong Kong 136
Hefei 80
San Jose 69
Beijing 64
Lauterbourg 61
Ashburn 44
Seoul 42
Ho Chi Minh City 41
Los Angeles 32
Hanoi 28
São Paulo 23
Tokyo 16
Buffalo 12
Helsinki 11
Dallas 10
Frankfurt am Main 10
New York 10
Guangzhou 7
Biên Hòa 6
Da Nang 6
Minamishinagawa 6
Atlanta 5
Montreal 5
Ninh Bình 5
Phoenix 5
Rio de Janeiro 5
Baghdad 4
Bengaluru 4
Brasília 4
City of London 4
Delhi 4
Lima 4
Milan 4
Mumbai 4
Osaka 4
Quận Bình Thạnh 4
Stockholm 4
Belo Horizonte 3
Bogotá 3
Brooklyn 3
Charlotte 3
Erbil 3
Guarulhos 3
Guayaquil 3
Haiphong 3
Johannesburg 3
Kingston 3
Orem 3
Paragominas 3
Piracicaba 3
Quito 3
Toronto 3
Turku 3
Zurich 3
Angra dos Reis 2
Aracaju 2
Asunción 2
Auburn 2
Baku 2
Beaumont 2
Belgrade 2
Budapest 2
Campinas 2
Cao Lanh 2
Caracas 2
Chennai 2
Columbus 2
Criciúma 2
Dammam 2
Dhaka 2
Dublin 2
Falkenstein 2
Francisco Beltrão 2
Gualala 2
Guarujá 2
Houston 2
Huế 2
Issaquah 2
Istanbul 2
Itaperuna 2
Itapeva 2
Jakarta 2
Jaú 2
La Plata 2
Laferrere 2
Las Vegas 2
Limeira 2
London 2
Londrina 2
Marseille 2
Mogi das Cruzes 2
Montevideo 2
Munich 2
New Delhi 2
O'Fallon 2
Orlando 2
Osasco 2
Parma 2
Totale 1.649
Nome #
15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition 86
Ion irradiation induced formation of CdO microcrystals on CdTe surfaces 68
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors 63
Epitaxial germanium for photovoltaic or opto-electronic applications 59
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering 53
Excitonic recombination in superstoichiometric nanocrystalline TiO2 grown by cluster precursors at room temperature 53
Results on MOVPE SiGeSn deposition for the monolithic integration of III-V and IV elements in multi-junction solar cells 51
Controlled in-plane band gap modulation by electron beam steering in hydrogenated GaAsN and GaPN layers 50
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 49
Nuove tecnologie e strumenti per l'efficienza energerica e l'utilizzo delle fonti rinnovabili negli usi finali civili 47
Thermal Processing and Characterizations of Dye-Sensitized Solar Cells Based on Nanostructured TiO2 47
Simulation of the cathodoluminescence processes in semiconductors 47
High temperature properties of CdTe crystals doped by Sb 46
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 45
Controlled band gap modulation of hydrogenated diluted nitrides by SEM- Cathodoluminescence 45
Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation 44
A study of the CdTe treatment with a freon gas such as CHF2Cl 43
Effects of Chemical Treatment on the Luminescence of ZnO 43
Germanium homoepitaxial cells for thermophotovoltaic systems 42
Low-temperature germanium thin films on silicon 41
Celle solari a film sottili basate su semiconduttori composti 40
Growth and characterization of RGB cathodoluminescent ceramic films 39
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect 38
Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterization 38
HEMT ad alta mobilità e ad altissima larghezza di banda 38
Influence of the stoichiometry deviation on the structural and optical properties of CdTe crystals 36
Role of thermal treatment on the luminescence properties of CdTe thin films for photovoltaic applications 36
Thin film composition determination by means of integrated intensity measurements 36
Investigation of the recombination dynamics in low in-content InGaN MQWs by means of cathodoluminescence and photo-luminescence excitation 35
Role of thermal treatment on the luminescence properties of CdTe thin films for photovoltaic applications 34
Crystal defects and optical transition in high purity, high resistivity cdte for device applications 33
Spettroscopia ottica in microscopia elettronica mediante catodoluminescenza applicata a nanostrutture di semiconduttori 33
Hydride vapour phase epitaxy growth and characterization of GaN layers 33
Luminescence properties of CZT crystals in the presence of tellurium inclusions 33
Relazione sulle attività completate nel 4° semestre, periodo 20/09/2009-20/02/2010 del progetto 1 32
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 32
Al.LES: a random walk simulation approach to luminescence processes in semiconductors 32
Stoichiometry related defects in CdTe crystals 31
Optical and structural characterization of CdTe crystals grown by PVT and Bridgman methods 31
Cathodoluminescence and Micro-Raman Characterisation of GaN/AlN QDs Grown on Si (111) 31
Nanospettroscopia ottica quantitativa ad alta risoluzione laterale ed in profondità 30
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 30
Stoichiometry related defects in CdTe crystals 30
Defect-induced luminescence in high resistivity high-purity undoped CdTe crystals 30
Interface properties of HCF2Cl annealed CdTe thin films for solar cells applications 29
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering 29
Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers 29
Influence of the materials properties on photovoltaic device performances 29
Accelerated DC-aging of InGaN LEDs: effects on electrical and optical properties 29
Al.L.E.S.: A random walk simulation approach to cathodoluminescence processes in semiconductors 28
The role of Mg complexes in the degradation of InGaN-based LEDs 28
Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN 28
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 28
Narrow, deep level cathodoluminescence emission from semi-insulating GaAs 27
Electrical and optical properties of defects in proton-irradiated gan epilayers 27
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 27
Influence of the Fluorine doping on the optical properties of CdS thin films for photovoltaic applications 27
High Resistivity Cadmium Telluride Grown by Boron Oxide Capping Bridgman Technique 26
Materiali e dispositivi per generatori termofotovoltaici 26
Polarization field effects on the recombination dynamics in low In-content InGaN multi-quantum wells 26
Effects of thermal annealing on gan epilayers deposited on (0001) sapphire 25
Thin film composition determination by means of integrated intensity measurements 25
Defects induced luminescence in high resistivity high purity undoped cdte crystals 25
Optical and structural characterization of self-organized stacked GaN/AlN quantum dots 24
Optical and structural characterization of GaN/AlN quantum dots 24
Investigations of 0.9 eV cathodoluminescence emission in GaAs 24
Indium distribution and influence of internal fields in InGaN quantum wells 24
Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization 24
Selective area growth of GaInNAs/GaAs by MOVPE 22
Relazione tecnica semestrale, periodo dal 01.01.2006 al 30.06.2006 relativa al Laboratorio Energia - ERG - Obiettivo realizzativo 6: energia fotovoltaica dal titolo 21
Characterization of gan-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 20
Study of point defects in dilute nitrides by electron beam irradiation and cathodoluminescence 20
Influence of the Fluorine doping on the optical properties of CdS thin films for photovoltaic applications 19
Totale 2.573
Categoria #
all - tutte 8.964
article - articoli 4.351
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 580
Totale 13.895


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202421 0 0 0 0 0 0 0 0 0 2 18 1
2024/20251.076 3 4 70 39 340 83 14 32 28 17 237 209
2025/20261.420 59 132 140 240 283 59 233 88 78 58 33 17
2026/202756 56 0 0 0 0 0 0 0 0 0 0 0
Totale 2.573