The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C-SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10<sup>11</sup> cm<sup>-2</sup> eV<sup>-1</sup> was observed with improving the crystalline quality.
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications
Privitera S;Alberti A;Mannino G;Fiorenza P;Di Franco S;La Via F
2015
Abstract
The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C-SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 1011 cm-2 eV-1 was observed with improving the crystalline quality.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.