CNR Institutional Research Information System

CALARCO, RAFFAELLA
 Distribuzione geografica
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Continente #
AS - Asia 47
NA - Nord America 15
EU - Europa 2
Totale 64
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Nazione #
SG - Singapore 29
US - Stati Uniti d'America 15
KR - Corea 14
CN - Cina 4
FR - Francia 1
IT - Italia 1
Totale 64
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Città #
Singapore 24
Seoul 14
Santa Clara 3
Ashburn 1
Forest City 1
Guangzhou 1
Springfield 1
Turin 1
Totale 46
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Nome #
Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys 4
Growth of crystalline phase change materials by physical deposition methods 4
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 4
Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices 4
2D or not 2D: strain tuning in weakly coupled heterostructures 4
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 4
Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys 3
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys 3
Ferroelectric Control of the Spin Texture in GeTe 3
MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires 3
Disordering process of GeSb2Te4 induced by ion irradiation 3
Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111) 3
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 3
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys 2
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 2
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 2
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 2
GeTe: a simple compound blessed with a plethora of properties 2
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys 2
Laser-driven switching dynamics in phase change materials investigated by time-resolved X-ray absorption spectroscopy 1
Integration of GaN Crystals on Micropatterned Si(001) Substrates by Plasma-Assisted Molecular Beam Epitaxy 1
Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices 1
Coincident-site lattice matching during van der Waals epitaxy 1
Thick pure Ge films for photodetectors 1
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy 1
Formation of resonant bonding during growth of ultrathin GeTe films 1
Totale 64
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Categoria #
all - tutte 494
article - articoli 494
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 988
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202419 0 0 0 0 0 0 0 0 0 1 17 1
2024/202545 3 1 41 0 0 0 0 0 0 0 0 0
Totale 64