CNR Institutional Research Information System

CALARCO, RAFFAELLA
 Distribuzione geografica
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Continente #
AS - Asia 992
NA - Nord America 501
EU - Europa 279
SA - Sud America 200
AF - Africa 20
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.995
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Nazione #
US - Stati Uniti d'America 466
SG - Singapore 405
CN - Cina 232
BR - Brasile 161
VN - Vietnam 115
HK - Hong Kong 94
FR - Francia 64
KR - Corea 55
IT - Italia 50
FI - Finlandia 34
DE - Germania 25
NL - Olanda 22
IN - India 19
GB - Regno Unito 18
AR - Argentina 17
CA - Canada 17
JP - Giappone 13
MX - Messico 13
BD - Bangladesh 9
EC - Ecuador 9
ID - Indonesia 8
PL - Polonia 7
BE - Belgio 6
ES - Italia 6
IL - Israele 6
UA - Ucraina 6
IE - Irlanda 5
SE - Svezia 5
TR - Turchia 5
ZA - Sudafrica 5
CO - Colombia 4
KG - Kirghizistan 4
PY - Paraguay 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
DZ - Algeria 3
KZ - Kazakistan 3
MA - Marocco 3
PH - Filippine 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
AT - Austria 2
BG - Bulgaria 2
EG - Egitto 2
GR - Grecia 2
HR - Croazia 2
IQ - Iraq 2
JM - Giamaica 2
KE - Kenya 2
LT - Lituania 2
LV - Lettonia 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
RU - Federazione Russa 2
TH - Thailandia 2
UG - Uganda 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
CL - Cile 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EE - Estonia 1
ET - Etiopia 1
IM - Isola di Man 1
IR - Iran 1
LA - Repubblica Popolare Democratica del Laos 1
MK - Macedonia 1
NG - Nigeria 1
NI - Nicaragua 1
NO - Norvegia 1
PS - Palestinian Territory 1
RO - Romania 1
RS - Serbia 1
SY - Repubblica araba siriana 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 1.995
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Città #
Singapore 258
Santa Clara 144
Hefei 95
Hong Kong 92
San Jose 58
Seoul 54
Beijing 48
Lauterbourg 45
Ho Chi Minh City 40
Ashburn 37
Hanoi 29
Los Angeles 27
São Paulo 24
Rome 23
Turku 18
Dallas 12
Lappeenranta 12
Frankfurt am Main 11
New York 11
Orem 9
Munich 8
Council Bluffs 7
Minamishinagawa 7
Curitiba 6
Seattle 6
Tokyo 6
Brussels 5
Cavallino 5
Chennai 5
Da Nang 5
Nha Trang 5
Ottawa 5
Stockholm 5
Warsaw 5
Bishkek 4
Brooklyn 4
Buffalo 4
Can Tho 4
Dublin 4
Guayaquil 4
Helsinki 4
Partanna 4
San Francisco 4
Atlanta 3
Biên Hòa 3
Bologna 3
Bratislava 3
Buenos Aires 3
Chicago 3
Goiânia 3
Hải Dương 3
Ipatinga 3
Istanbul 3
Jeddah 3
Leipzig 3
Ljubljana 3
Ninh Bình 3
Osasco 3
Quito 3
Rio de Janeiro 3
Tashkent 3
Toronto 3
Auckland 2
Bengaluru 2
Cairo 2
Charlotte 2
Ciudad Benito Juárez 2
Columbia 2
Dhaka 2
Elk Grove Village 2
Haiphong 2
Jacksonville 2
Johannesburg 2
Jundiaí 2
Kampala 2
Kochi 2
Kyiv 2
London 2
Manaus 2
Manchester 2
Mexico City 2
Montreal 2
Mumbai 2
Nairobi 2
Padua 2
Phoenix 2
Phương Lâm 2
Querétaro 2
Riga 2
Santa Cruz do Sul 2
Santa Luzia 2
Santa Maria di Licodia 2
Sofia 2
Sorocaba 2
Thái Bình 2
Vancouver 2
Vitória 2
Zagreb 2
Abaetetuba 1
Abuja 1
Totale 1.294
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Nome #
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide 91
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 70
Mocvd growth of gete/sb2 te3 core–shell nanowires 63
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 61
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys 60
Evolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films 59
Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys 57
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys 57
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 57
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 56
Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys 55
Characterisation of optical phonons within epitaxial Ge2Sb2Te5/InAs(111) structures 52
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys 51
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics 50
Disordering process of GeSb2Te4 induced by ion irradiation 46
Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111) 46
Toward Sustainable Electronics: Exploiting the Potential of a Biodegradable Cellulose Blend for Photolithographic Processes and Eco-Friendly Devices 44
Study of nanometer resolution resist slope for the UVIII chemically amplified resist. 43
Keep it simple and switch to pure tellurium 43
Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates 43
Epitaxial growth of GeTe/Sb2Te3 superlattices 43
Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride 43
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae 42
Ferroelectric Control of the Spin Texture in GeTe 40
Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase 40
Carrier Diffusion in GaN: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations 38
Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge-Sb-Te Alloys 38
Toward Truly Single Crystalline GeTe Films: The Relevance of the Substrate Surface 37
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 36
Investigation on localized states in GaN nanowires 35
Carrier Diffusion in GaN: A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion 34
Defect distribution along single GaN nanowhiskers 33
Growth of crystalline phase change materials by physical deposition methods 33
Laser-driven switching dynamics in phase change materials investigated by time-resolved X-ray absorption spectroscopy 33
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 33
A refined plan-view specimen preparation technique for high-quality electron microscopy studies of epitaxially grown atomically thin 2D layers 32
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 31
Thick pure Ge films for photodetectors 30
Carrier Diffusion in Ga N: A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume 30
Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study 29
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys 28
Formation of resonant bonding during growth of ultrathin GeTe films 28
GeTe: a simple compound blessed with a plethora of properties 27
2D or not 2D: strain tuning in weakly coupled heterostructures 27
Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 26
Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices 25
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy 24
Coincident-site lattice matching during van der Waals epitaxy 23
Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices 22
Integration of GaN Crystals on Micropatterned Si(001) Substrates by Plasma-Assisted Molecular Beam Epitaxy 21
Influence of Mg doping on in adsorption and in incorporation in (In,Ga)N superlattices 19
Totale 2.084
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Categoria #
all - tutte 7.020
article - articoli 7.020
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.040
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202421 0 0 0 0 0 0 0 0 0 1 19 1
2024/2025877 3 1 45 22 138 93 72 53 41 35 216 158
2025/20261.186 86 144 109 188 244 49 143 50 65 74 34 0
Totale 2.084