CALARCO, RAFFAELLA
 Distribuzione geografica
Continente #
AS - Asia 1.012
NA - Nord America 684
EU - Europa 291
SA - Sud America 216
Continente sconosciuto - Info sul continente non disponibili 90
AF - Africa 22
OC - Oceania 2
Totale 2.317
Nazione #
US - Stati Uniti d'America 631
SG - Singapore 405
CN - Cina 232
BR - Brasile 164
VN - Vietnam 119
HK - Hong Kong 95
FR - Francia 64
IT - Italia 59
KR - Corea 55
FI - Finlandia 34
CA - Canada 27
DE - Germania 25
NL - Olanda 22
GB - Regno Unito 20
IN - India 20
AR - Argentina 17
BD - Bangladesh 17
EC - Ecuador 14
MX - Messico 14
JP - Giappone 13
CO - Colombia 11
ID - Indonesia 10
IL - Israele 7
PL - Polonia 7
BE - Belgio 6
ES - Italia 6
UA - Ucraina 6
IE - Irlanda 5
PH - Filippine 5
SE - Svezia 5
TR - Turchia 5
ZA - Sudafrica 5
KG - Kirghizistan 4
PY - Paraguay 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
DZ - Algeria 3
KE - Kenya 3
KZ - Kazakistan 3
MA - Marocco 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
TH - Thailandia 3
UY - Uruguay 3
AT - Austria 2
BG - Bulgaria 2
EG - Egitto 2
GR - Grecia 2
HN - Honduras 2
HR - Croazia 2
IQ - Iraq 2
JM - Giamaica 2
LT - Lituania 2
LV - Lettonia 2
MK - Macedonia 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
RU - Federazione Russa 2
UG - Uganda 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BY - Bielorussia 1
BZ - Belize 1
CL - Cile 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EE - Estonia 1
ET - Etiopia 1
IM - Isola di Man 1
IR - Iran 1
LA - Repubblica Popolare Democratica del Laos 1
LC - Santa Lucia 1
NG - Nigeria 1
NI - Nicaragua 1
NO - Norvegia 1
PR - Porto Rico 1
PS - Palestinian Territory 1
RO - Romania 1
RS - Serbia 1
SC - Seychelles 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 2.228
Città #
Singapore 258
Santa Clara 148
Hefei 95
Hong Kong 93
San Jose 63
Seoul 54
Ashburn 52
Beijing 48
Lauterbourg 45
Ho Chi Minh City 41
Hanoi 29
Los Angeles 28
São Paulo 24
Rome 23
Turku 18
Dallas 14
Lappeenranta 12
Frankfurt am Main 11
New York 11
Orem 10
Munich 8
Atlanta 7
Council Bluffs 7
Minamishinagawa 7
Seattle 7
Buffalo 6
Chicago 6
Curitiba 6
Ottawa 6
Tokyo 6
Brooklyn 5
Brussels 5
Cavallino 5
Chennai 5
Da Nang 5
Guayaquil 5
Nha Trang 5
Quito 5
San Francisco 5
Stockholm 5
Warsaw 5
Bishkek 4
Bologna 4
Can Tho 4
Charlotte 4
Dublin 4
Helsinki 4
Partanna 4
Toronto 4
Athens 3
Biên Hòa 3
Boston 3
Bratislava 3
Buenos Aires 3
Goiânia 3
Hải Dương 3
Ipatinga 3
Istanbul 3
Jeddah 3
Leipzig 3
Ljubljana 3
Montreal 3
Nairobi 3
Ninh Bình 3
Osasco 3
Queens 3
Rio de Janeiro 3
Tashkent 3
Auckland 2
Bengaluru 2
Boulder 2
Cairo 2
Ciudad Benito Juárez 2
Columbia 2
Detroit 2
Dhaka 2
Edinburgh 2
Elgin 2
Elk Grove Village 2
Fayetteville 2
Florence 2
Florida 2
Haiphong 2
Hoffman Estates 2
Jacksonville 2
Johannesburg 2
Jundiaí 2
Kampala 2
Kochi 2
Kyiv 2
Levittown 2
Lithia Springs 2
London 2
Manaus 2
Manchester 2
Mexico City 2
Miami 2
Milan 2
Mounds 2
Mumbai 2
Totale 1.351
Nome #
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide 95
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 82
Mocvd growth of gete/sb2 te3 core–shell nanowires 82
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 70
Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys 65
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 65
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys 65
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 64
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys 61
Evolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films 60
Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys 58
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys 58
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics 58
Characterisation of optical phonons within epitaxial Ge2Sb2Te5/InAs(111) structures 54
Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111) 51
Toward Sustainable Electronics: Exploiting the Potential of a Biodegradable Cellulose Blend for Photolithographic Processes and Eco-Friendly Devices 49
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae 48
Disordering process of GeSb2Te4 induced by ion irradiation 48
Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride 48
Keep it simple and switch to pure tellurium 47
Study of nanometer resolution resist slope for the UVIII chemically amplified resist. 46
Ferroelectric Control of the Spin Texture in GeTe 45
Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates 45
Epitaxial growth of GeTe/Sb2Te3 superlattices 45
Carrier Diffusion in GaN: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations 43
Investigation on localized states in GaN nanowires 43
Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge-Sb-Te Alloys 41
Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase 41
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 41
Laser-driven switching dynamics in phase change materials investigated by time-resolved X-ray absorption spectroscopy 39
Toward Truly Single Crystalline GeTe Films: The Relevance of the Substrate Surface 39
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 36
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 36
Defect distribution along single GaN nanowhiskers 35
A refined plan-view specimen preparation technique for high-quality electron microscopy studies of epitaxially grown atomically thin 2D layers 35
Carrier Diffusion in GaN: A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion 35
Growth of crystalline phase change materials by physical deposition methods 34
Carrier Diffusion in Ga N: A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume 33
Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study 33
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys 32
Thick pure Ge films for photodetectors 31
Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices 31
Formation of resonant bonding during growth of ultrathin GeTe films 31
Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 30
GeTe: a simple compound blessed with a plethora of properties 30
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy 30
2D or not 2D: strain tuning in weakly coupled heterostructures 30
Coincident-site lattice matching during van der Waals epitaxy 28
Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices 25
Integration of GaN Crystals on Micropatterned Si(001) Substrates by Plasma-Assisted Molecular Beam Epitaxy 24
Influence of Mg doping on in adsorption and in incorporation in (In,Ga)N superlattices 22
Totale 2.317
Categoria #
all - tutte 8.458
article - articoli 8.458
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.916


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202421 0 0 0 0 0 0 0 0 0 1 19 1
2024/2025877 3 1 45 22 138 93 72 53 41 35 216 158
2025/20261.216 86 144 109 188 244 49 143 50 65 74 44 20
2026/2027203 66 55 82 0 0 0 0 0 0 0 0 0
Totale 2.317