CNR Institutional Research Information System

PAVESI, MAURA
 Distribuzione geografica
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Continente #
NA - Nord America 254
AS - Asia 67
EU - Europa 19
AF - Africa 2
Totale 342
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Nazione #
US - Stati Uniti d'America 254
SG - Singapore 58
FI - Finlandia 13
CN - Cina 5
DE - Germania 4
KR - Corea 3
CM - Camerun 2
GB - Regno Unito 1
HK - Hong Kong 1
IT - Italia 1
Totale 342
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Città #
Santa Clara 238
Singapore 37
Helsinki 13
Seoul 3
Falkenstein 2
Frankfurt am Main 2
Phoenix 2
Guangzhou 1
Hong Kong 1
Naples 1
Totale 300
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Nome #
Growth and characterization of CZT crystals by the vertical Bridgman method for X-ray detector applications 12
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 12
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 12
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals 11
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 11
Hysteresis loop and cross-talk of organic memristive devices 11
On the Role of Boron in CdTe and CdZnTe Crystals 10
Enhanced luminescence of CuCl microcrystals dispersed in a hybrid organic-inorganic matrix. 10
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material 10
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 10
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors 9
CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method 9
Enhanced luminescence of CuCl microcrystals in a organic-inorganic hybrid matrix 9
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 9
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 9
Hybrid [CnH(2n+1)NH3]2CuCl4 Self-Assembled Films as Potential UV Emitters for LED Applications 9
Accelerated DC-aging of InGaN LEDs: effects on electrical and optical properties 9
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique 8
Characterization of bulk and surface transport mechanisms by means of the photocurrent technique 8
CZT X-rays detectors obtained by the boron oxide encapsulated vertical Bridgman method 8
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 8
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes. 8
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 8
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 8
Characterization of Bulk and Surface Transport Mechanisms by Means of the Photocurrent Technique 8
Oriented orthorhombic Lead Oxide film grown by vapour phase deposition for X-ray detector applications 8
Characterization of X-Ray Detectors Based on Encapsulated Vertical Bridgman Grown CZT Crystals for Astrophysics Application 8
Study of surface treatment effects on the metal-CdZnTe interface 8
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 7
Growth and Characterization of CdZnTe Crystals by the Encapsulated Vertical Bridgman Technique for X-ray Imaging 7
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 7
Evaluation of electric field profile and transport parameters in solid-state CZT detectors 7
The role of Mg complexes in the degradation of InGaN-based LEDs 7
HEMT ad alta mobilità e ad altissima larghezza di banda 7
Characterization of gan-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 7
Thermal Processing and Characterizations of Dye-Sensitized Solar Cells Based on Nanostructured TiO2 7
Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes 6
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 6
High temperature failure of GaN LEDS related with passivation 6
Temperature and current dependence of the optical intensity and energy shift in blue InGaN based LEDs: comparison between electroluminescence and cathodoluninescence 6
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 5
Totale 345
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Categoria #
all - tutte 1.148
article - articoli 813
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.961
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 0 0 7 0
2024/2025338 3 1 51 23 198 62 0 0 0 0 0 0
Totale 345