CNR Institutional Research Information System

RIMINI, EMANUELE
 Distribuzione geografica
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Continente #
NA - Nord America 262
AS - Asia 126
EU - Europa 11
Totale 399
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Nazione #
US - Stati Uniti d'America 262
SG - Singapore 113
CN - Cina 8
IT - Italia 5
KR - Corea 5
FI - Finlandia 3
NL - Olanda 2
DE - Germania 1
Totale 399
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Città #
Santa Clara 237
Singapore 89
Seoul 5
Helsinki 3
Bologna 2
Fort Worth 2
Xinxiang 2
Ashburn 1
Frankfurt am Main 1
Guangzhou 1
Milan 1
Nomi 1
Turin 1
Totale 346
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Nome #
Structural transformations in Ge2Sb2Te5 under high pressure and temperature 10
Strain development and damage accumulation under ion irradiation of polycrystalline Ge-Sb-Te alloys 10
Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films 10
Transient crystal grain nucleation in As doped amorphous silicon 9
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 9
Selective diffusion of gold nanodots on nanopatterned substrates realized by self-assembly of diblock copolymers 9
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 9
Mechanical properties of amorphous Ge2Sb2Te5thin layers 8
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC 8
Disordering process of GeSb2Te4 induced by ion irradiation 8
Electroless deposition of gold investigated with rutherford backscattering and electron microscopy 8
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 8
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES 7
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition 7
Nanoscale modification of graphene transport properties by ion irradiation 7
Electroless deposition of silver investigated with rutherford backscattering and electron microscopy 7
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 7
Investigation of Ag-assisted chemical etching on (100) and (111) contiguous silicon surfaces 7
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters 7
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations 7
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 7
Coalescence of silver clusters by immersion in diluted HF solution 7
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 7
Ion beam induced transient amorphous nucleation in silicon 6
EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION 6
Atomic disordering processes in crystalline GeTe induced by ion irradiation 6
CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON 6
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 6
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 6
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 6
Nucleation and grain growth in as deposited and ion implanted GeTe thin films 6
Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation 6
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON 6
Pressure-induced amorphous Ge 2 Sb 2 Te 5 retention investigated by in situ X-Ray Diffraction 6
AN ENERGY DISPERSION SPECTROSCOPY TECHNIQUE TO MEASURE TITANIUM SILICIDE LATERAL DIFFUSION 6
Maskless nano-implant of 20 keV Ga+ in bulk Si(1 0 0) substrates 6
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 6
SIZE EFFECTS IN THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ONTO SI SUBSTRATES 6
AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI 6
CRYSTAL AMORPHOUS-SILICON INTERFACE KINETICS UNDER ION-BEAM IRRADIATION 5
ION-ASSISTED CRYSTALLIZATION IN SILICON - EPITAXY AND GRAIN-GROWTH 5
AMORPHOUS TO SINGLE-CRYSTAL TRANSITION IN SI INDUCED BY ION-BEAM IRRADIATION 5
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 5
Evolution of the Transrotational Structure During Crystallization of Amorphous Ge(2)Sb(2)Te(5) Thin Films 5
Nucleation and growth of NiSi from Ni2Si transrotational domains (vol 90, pg 053507, 2007) 5
Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface 5
Local electrical properties of the 4H-SiC(0001)/graphene interface 5
INFLUENCE OF OXYGEN ON THE ION-ASSISTED REGROWTH OF DEPOSITED SI LAYERS 5
Temperature dependent reaction of thin Ni-silicide transrotational layers on [001]Si 5
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 5
KINETIC AND STRUCTURAL STUDY OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI FILMS 5
ION CHANNELING ANALYSIS OF EXTENDED-DEFECT ANNEALING IN SILICON BY RAPID THERMAL-PROCESSES 4
STRUCTURAL CHARACTERIZATION OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS 4
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON 4
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 4
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films 4
REALIGNMENT OF ARSENIC DOPED POLYCRYSTALLINE SI FILMS BY DOUBLE STEP ANNEALING 4
PHENOMENOLOGICAL DESCRIPTION OF ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON 4
RAPID THERMAL ANNEALING OF HOT IMPLANTS IN SILICON 4
EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI LAYERS BY RAPID THERMAL ANNEALING 4
EXTENDED DEFECT REMOVAL IN SILICON BY RAPID THERMAL ANNEALING 4
INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI 4
STRUCTURAL AND ELECTRICAL STUDY OF EPITAXIALLY REALIGNED SB-DOPED POLYCRYSTALLINE SI FILMS 4
ION-ASSISTED RECRYSTALLIZATION OF AMORPHOUS-SILICON 4
ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS ON SI SUBSTRATES PROCESSED BY RAPID THERMAL ANNEALING 4
ROLE OF GRAIN-BOUNDARIES IN THE EPITAXIAL REALIGNMENT OF UNDOPED AND AS-DOPED POLYCRYSTALLINE SILICON FILMS 4
Totale 399
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Categoria #
all - tutte 1.814
article - articoli 1.662
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.476
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202415 0 0 0 0 0 0 0 0 0 1 14 0
2024/2025384 5 5 98 30 230 16 0 0 0 0 0 0
Totale 399