CNR Institutional Research Information System

RIMINI, EMANUELE
 Distribuzione geografica
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Continente #
AS - Asia 1.183
NA - Nord America 606
SA - Sud America 252
EU - Europa 204
AF - Africa 15
Totale 2.260
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Nazione #
US - Stati Uniti d'America 585
SG - Singapore 539
CN - Cina 246
BR - Brasile 199
VN - Vietnam 137
HK - Hong Kong 119
FR - Francia 79
KR - Corea 37
AR - Argentina 26
IT - Italia 22
DE - Germania 21
NL - Olanda 20
GB - Regno Unito 18
BD - Bangladesh 15
JP - Giappone 15
IN - India 13
FI - Finlandia 12
MX - Messico 10
TR - Turchia 8
UA - Ucraina 8
CO - Colombia 7
ID - Indonesia 7
IL - Israele 7
PH - Filippine 7
EC - Ecuador 6
CA - Canada 5
IQ - Iraq 5
VE - Venezuela 5
PK - Pakistan 4
PL - Polonia 4
PY - Paraguay 4
RU - Federazione Russa 4
UZ - Uzbekistan 4
ES - Italia 3
KE - Kenya 3
KZ - Kazakistan 3
TN - Tunisia 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
JO - Giordania 2
LT - Lituania 2
MA - Marocco 2
SA - Arabia Saudita 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
ZA - Sudafrica 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CL - Cile 1
CY - Cipro 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
GR - Grecia 1
IE - Irlanda 1
JM - Giamaica 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
LV - Lettonia 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
RS - Serbia 1
SI - Slovenia 1
SN - Senegal 1
TG - Togo 1
Totale 2.260
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Città #
Singapore 336
Santa Clara 243
Hong Kong 118
Hefei 84
San Jose 70
Beijing 61
Lauterbourg 54
Ho Chi Minh City 50
Ashburn 43
Seoul 37
Hanoi 36
Dallas 21
São Paulo 21
Los Angeles 18
Frankfurt am Main 10
Cavallino 9
Tokyo 9
Rio de Janeiro 8
Helsinki 6
New York 6
Ribeirão Preto 6
Bengaluru 5
Brasília 5
Buffalo 5
Can Tho 5
Salvador 5
Atlanta 4
Biên Hòa 4
Chennai 4
Curitiba 4
Düsseldorf 4
Lappeenranta 4
Mexico City 4
Minamishinagawa 4
Nha Trang 4
Phoenix 4
Poplar 4
Recife 4
Almaty 3
Amsterdam 3
Aracaju 3
Asunción 3
Baghdad 3
Brooklyn 3
Buenos Aires 3
Caxias do Sul 3
Chicago 3
Da Nang 3
Guangzhou 3
Istanbul 3
Manchester 3
Mumbai 3
Newark 3
Paris 3
Ribeirão das Neves 3
Rome 3
San Francisco 3
Sorocaba 3
St Louis 3
Tashkent 3
Thái Bình 3
Warsaw 3
Amman 2
Ankara 2
Bangkok 2
Belo Horizonte 2
Bogotá 2
Bologna 2
Caracas 2
Casablanca 2
Charlotte 2
Ciudad Benito Juárez 2
Council Bluffs 2
Cúcuta 2
Dhaka 2
Dublin 2
Fort Worth 2
Fortaleza 2
Guarulhos 2
Guayaquil 2
Hangzhou 2
Jaboatão dos Guararapes 2
Karachi 2
Lanús 2
Long An 2
Manila 2
Mauá 2
Montevideo 2
Montreal 2
Munich 2
Nairobi 2
Nantou City 2
Niterói 2
Osaka 2
Osasco 2
Phương Lâm 2
Plano 2
Porlamar 2
Porto Alegre 2
Portsmouth 2
Totale 1.467
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Nome #
Mechanical properties of amorphous Ge2Sb2Te5thin layers 86
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES 67
Measuring Techniques for the Semiconductor’s Parameters 66
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 57
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition 52
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 52
Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes 52
Transient crystal grain nucleation in As doped amorphous silicon 50
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 47
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters 46
Disordering process of GeSb2Te4 induced by ion irradiation 46
Ion beam irradiation of phase change materials: A route to material properties investigation and engineering 46
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 45
CRYSTAL AMORPHOUS-SILICON INTERFACE KINETICS UNDER ION-BEAM IRRADIATION 44
Selective diffusion of gold nanodots on nanopatterned substrates realized by self-assembly of diblock copolymers 44
Ion beam induced transient amorphous nucleation in silicon 43
ION CHANNELING ANALYSIS OF EXTENDED-DEFECT ANNEALING IN SILICON BY RAPID THERMAL-PROCESSES 41
Investigation of Ag-assisted chemical etching on (100) and (111) contiguous silicon surfaces 39
Strain development and damage accumulation under ion irradiation of polycrystalline Ge-Sb-Te alloys 39
Structural transformations in Ge2Sb2Te5 under high pressure and temperature 38
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations 37
STRUCTURAL CHARACTERIZATION OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS 36
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 36
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 36
Electroless deposition of silver investigated with rutherford backscattering and electron microscopy 35
Atomic disordering processes in crystalline GeTe induced by ion irradiation 35
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 35
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON 34
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 34
Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications 34
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 33
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 31
Local electrical properties of the 4H-SiC(0001)/graphene interface 31
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 29
Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface 29
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 28
Evolution of the Transrotational Structure During Crystallization of Amorphous Ge(2)Sb(2)Te(5) Thin Films 27
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 27
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films 26
Nanoscale modification of graphene transport properties by ion irradiation 26
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 26
Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation 26
ION-ASSISTED RECRYSTALLIZATION OF AMORPHOUS-SILICON 26
ION-ASSISTED CRYSTALLIZATION IN SILICON - EPITAXY AND GRAIN-GROWTH 25
EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI LAYERS BY RAPID THERMAL ANNEALING 25
Electroless deposition of gold investigated with rutherford backscattering and electron microscopy 25
Nucleation and grain growth in as deposited and ion implanted GeTe thin films 24
Pressure-induced amorphous Ge 2 Sb 2 Te 5 retention investigated by in situ X-Ray Diffraction 24
CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON 23
REALIGNMENT OF AS DOPED SILICON FILMS DEPOSITED ON (100) SILICON SUBSTRATES 23
Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films 23
AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI 23
INFLUENCE OF OXYGEN ON THE ION-ASSISTED REGROWTH OF DEPOSITED SI LAYERS 22
AN ENERGY DISPERSION SPECTROSCOPY TECHNIQUE TO MEASURE TITANIUM SILICIDE LATERAL DIFFUSION 22
Temperature dependent reaction of thin Ni-silicide transrotational layers on [001]Si 22
AMORPHOUS TO SINGLE-CRYSTAL TRANSITION IN SI INDUCED BY ION-BEAM IRRADIATION 20
RAPID THERMAL ANNEALING OF HOT IMPLANTS IN SILICON 20
ROLE OF GRAIN-BOUNDARIES IN THE EPITAXIAL REALIGNMENT OF UNDOPED AND AS-DOPED POLYCRYSTALLINE SILICON FILMS 20
REALIGNMENT OF ARSENIC DOPED POLYCRYSTALLINE SI FILMS BY DOUBLE STEP ANNEALING 19
EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION 19
Nucleation and growth of NiSi from Ni2Si transrotational domains (vol 90, pg 053507, 2007) 19
PHENOMENOLOGICAL DESCRIPTION OF ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON 19
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON 19
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC 18
SIZE EFFECTS IN THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ONTO SI SUBSTRATES 18
KINETIC AND STRUCTURAL STUDY OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI FILMS 18
INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI 17
ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS ON SI SUBSTRATES PROCESSED BY RAPID THERMAL ANNEALING 17
STRUCTURAL AND ELECTRICAL STUDY OF EPITAXIALLY REALIGNED SB-DOPED POLYCRYSTALLINE SI FILMS 15
EXTENDED DEFECT REMOVAL IN SILICON BY RAPID THERMAL ANNEALING 11
Coalescence of silver clusters by immersion in diluted HF solution 10
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Maskless nano-implant of 20 keV Ga+ in bulk Si(1 0 0) substrates 3
Totale 2.300
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Categoria #
all - tutte 8.352
article - articoli 7.463
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 208
Totale 16.023
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202415 0 0 0 0 0 0 0 0 0 1 14 0
2024/2025967 6 5 98 30 229 21 50 37 22 39 225 205
2025/20261.318 53 155 130 212 279 46 217 78 62 53 33 0
Totale 2.300