CNR Institutional Research Information System

RIMINI, EMANUELE
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 1.195
NA - Nord America 677
SA - Sud America 253
EU - Europa 214
AF - Africa 15
Totale 2.354
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 653
SG - Singapore 539
CN - Cina 246
BR - Brasile 199
VN - Vietnam 137
HK - Hong Kong 119
FR - Francia 79
KR - Corea 37
IT - Italia 32
AR - Argentina 26
BD - Bangladesh 22
DE - Germania 21
NL - Olanda 20
GB - Regno Unito 18
JP - Giappone 16
IN - India 13
FI - Finlandia 12
MX - Messico 10
ID - Indonesia 8
TR - Turchia 8
UA - Ucraina 8
CA - Canada 7
CO - Colombia 7
IL - Israele 7
PH - Filippine 7
EC - Ecuador 6
UZ - Uzbekistan 6
IQ - Iraq 5
PK - Pakistan 5
VE - Venezuela 5
PL - Polonia 4
PY - Paraguay 4
RU - Federazione Russa 4
ES - Italia 3
KE - Kenya 3
KZ - Kazakistan 3
TN - Tunisia 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
CL - Cile 2
JM - Giamaica 2
JO - Giordania 2
LT - Lituania 2
MA - Marocco 2
SA - Arabia Saudita 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
ZA - Sudafrica 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
GR - Grecia 1
IE - Irlanda 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
LV - Lettonia 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
RS - Serbia 1
SI - Slovenia 1
SN - Senegal 1
TG - Togo 1
Totale 2.354
Salva come PNG Salva come JPEG
Città #
Singapore 336
Santa Clara 245
Hong Kong 118
Hefei 84
San Jose 72
Beijing 61
Lauterbourg 54
Ashburn 53
Ho Chi Minh City 50
Seoul 37
Hanoi 36
Dallas 23
São Paulo 21
Los Angeles 18
Frankfurt am Main 10
Cavallino 9
Tokyo 9
Rio de Janeiro 8
Buffalo 6
Helsinki 6
New York 6
Ribeirão Preto 6
Atlanta 5
Bengaluru 5
Brasília 5
Can Tho 5
Rome 5
Salvador 5
Tashkent 5
Austin 4
Biên Hòa 4
Chennai 4
Chicago 4
Curitiba 4
Düsseldorf 4
Fort Worth 4
Lappeenranta 4
Mexico City 4
Minamishinagawa 4
Naples 4
Nha Trang 4
Phoenix 4
Poplar 4
Recife 4
Almaty 3
Amsterdam 3
Aracaju 3
Arlington 3
Asunción 3
Baghdad 3
Brooklyn 3
Buenos Aires 3
Caxias do Sul 3
Charlotte 3
Da Nang 3
Guangzhou 3
Houston 3
Istanbul 3
Manchester 3
Mumbai 3
Newark 3
Paris 3
Ribeirão das Neves 3
San Francisco 3
Sorocaba 3
St Louis 3
Thái Bình 3
Warsaw 3
Amman 2
Ankara 2
Bangkok 2
Belo Horizonte 2
Boardman 2
Boca Raton 2
Bogotá 2
Bologna 2
Caracas 2
Casablanca 2
Ciudad Benito Juárez 2
Council Bluffs 2
Cúcuta 2
Dhaka 2
Dublin 2
Elgin 2
Figino 2
Fortaleza 2
Guarulhos 2
Guayaquil 2
Hangzhou 2
Homestead 2
Jaboatão dos Guararapes 2
Karachi 2
Lanús 2
Las Vegas 2
Long An 2
Manila 2
Mauá 2
Milan 2
Montevideo 2
Montreal 2
Totale 1.499
Salva come PNG Salva come JPEG
Nome #
Mechanical properties of amorphous Ge2Sb2Te5thin layers 88
Measuring Techniques for the Semiconductor’s Parameters 68
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES 67
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 60
Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes 55
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 53
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition 52
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 51
Transient crystal grain nucleation in As doped amorphous silicon 50
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters 49
Ion beam irradiation of phase change materials: A route to material properties investigation and engineering 48
Disordering process of GeSb2Te4 induced by ion irradiation 47
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 46
Ion beam induced transient amorphous nucleation in silicon 45
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 45
Selective diffusion of gold nanodots on nanopatterned substrates realized by self-assembly of diblock copolymers 45
CRYSTAL AMORPHOUS-SILICON INTERFACE KINETICS UNDER ION-BEAM IRRADIATION 44
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 44
ION CHANNELING ANALYSIS OF EXTENDED-DEFECT ANNEALING IN SILICON BY RAPID THERMAL-PROCESSES 42
Strain development and damage accumulation under ion irradiation of polycrystalline Ge-Sb-Te alloys 41
Investigation of Ag-assisted chemical etching on (100) and (111) contiguous silicon surfaces 40
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 39
Structural transformations in Ge2Sb2Te5 under high pressure and temperature 38
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations 38
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 38
STRUCTURAL CHARACTERIZATION OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS 37
Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications 37
Electroless deposition of silver investigated with rutherford backscattering and electron microscopy 35
Atomic disordering processes in crystalline GeTe induced by ion irradiation 35
Local electrical properties of the 4H-SiC(0001)/graphene interface 35
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON 34
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 34
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 32
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 30
Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface 30
Evolution of the Transrotational Structure During Crystallization of Amorphous Ge(2)Sb(2)Te(5) Thin Films 29
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films 28
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 28
Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation 28
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 28
ION-ASSISTED RECRYSTALLIZATION OF AMORPHOUS-SILICON 28
Nanoscale modification of graphene transport properties by ion irradiation 27
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 26
AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI 26
ION-ASSISTED CRYSTALLIZATION IN SILICON - EPITAXY AND GRAIN-GROWTH 25
EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI LAYERS BY RAPID THERMAL ANNEALING 25
Electroless deposition of gold investigated with rutherford backscattering and electron microscopy 25
Nucleation and grain growth in as deposited and ion implanted GeTe thin films 24
Pressure-induced amorphous Ge 2 Sb 2 Te 5 retention investigated by in situ X-Ray Diffraction 24
CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON 23
REALIGNMENT OF AS DOPED SILICON FILMS DEPOSITED ON (100) SILICON SUBSTRATES 23
Temperature dependent reaction of thin Ni-silicide transrotational layers on [001]Si 23
Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films 23
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON 22
INFLUENCE OF OXYGEN ON THE ION-ASSISTED REGROWTH OF DEPOSITED SI LAYERS 22
AN ENERGY DISPERSION SPECTROSCOPY TECHNIQUE TO MEASURE TITANIUM SILICIDE LATERAL DIFFUSION 22
Nucleation and growth of NiSi from Ni2Si transrotational domains (vol 90, pg 053507, 2007) 21
KINETIC AND STRUCTURAL STUDY OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI FILMS 21
AMORPHOUS TO SINGLE-CRYSTAL TRANSITION IN SI INDUCED BY ION-BEAM IRRADIATION 20
PHENOMENOLOGICAL DESCRIPTION OF ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON 20
RAPID THERMAL ANNEALING OF HOT IMPLANTS IN SILICON 20
ROLE OF GRAIN-BOUNDARIES IN THE EPITAXIAL REALIGNMENT OF UNDOPED AND AS-DOPED POLYCRYSTALLINE SILICON FILMS 20
SIZE EFFECTS IN THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ONTO SI SUBSTRATES 20
REALIGNMENT OF ARSENIC DOPED POLYCRYSTALLINE SI FILMS BY DOUBLE STEP ANNEALING 19
EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION 19
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC 18
INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI 17
ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS ON SI SUBSTRATES PROCESSED BY RAPID THERMAL ANNEALING 17
STRUCTURAL AND ELECTRICAL STUDY OF EPITAXIALLY REALIGNED SB-DOPED POLYCRYSTALLINE SI FILMS 15
Coalescence of silver clusters by immersion in diluted HF solution 12
EXTENDED DEFECT REMOVAL IN SILICON BY RAPID THERMAL ANNEALING 11
null 8
null 7
null 5
Maskless nano-implant of 20 keV Ga+ in bulk Si(1 0 0) substrates 3
Totale 2.394
Salva come PNG Salva come JPEG
Categoria #
all - tutte 9.373
article - articoli 8.377
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 230
Totale 17.980
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202415 0 0 0 0 0 0 0 0 0 1 14 0
2024/2025967 6 5 98 30 229 21 50 37 22 39 225 205
2025/20261.353 53 155 130 212 279 46 217 78 62 53 41 27
2026/202759 59 0 0 0 0 0 0 0 0 0 0 0
Totale 2.394