CNR Institutional Research Information System

RIMINI, EMANUELE
 Distribuzione geografica
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Continente #
AS - Asia 1.211
NA - Nord America 874
SA - Sud America 268
EU - Europa 230
Continente sconosciuto - Info sul continente non disponibili 40
AF - Africa 15
Totale 2.638
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Nazione #
US - Stati Uniti d'America 842
SG - Singapore 539
CN - Cina 246
BR - Brasile 206
VN - Vietnam 139
HK - Hong Kong 119
FR - Francia 80
IT - Italia 41
KR - Corea 37
AR - Argentina 26
BD - Bangladesh 26
DE - Germania 21
GB - Regno Unito 21
NL - Olanda 21
JP - Giappone 16
IN - India 13
FI - Finlandia 12
ID - Indonesia 11
MX - Messico 11
CO - Colombia 10
CA - Canada 9
VE - Venezuela 9
TR - Turchia 8
UA - Ucraina 8
EC - Ecuador 7
IL - Israele 7
PH - Filippine 7
PK - Pakistan 6
UZ - Uzbekistan 6
IQ - Iraq 5
MY - Malesia 4
PL - Polonia 4
PY - Paraguay 4
RU - Federazione Russa 4
ES - Italia 3
KE - Kenya 3
KZ - Kazakistan 3
SA - Arabia Saudita 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
CL - Cile 2
DO - Repubblica Dominicana 2
JM - Giamaica 2
JO - Giordania 2
LT - Lituania 2
MA - Marocco 2
TH - Thailandia 2
UY - Uruguay 2
ZA - Sudafrica 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CY - Cipro 1
DK - Danimarca 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
GE - Georgia 1
GR - Grecia 1
GT - Guatemala 1
IE - Irlanda 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
LV - Lettonia 1
MK - Macedonia 1
NI - Nicaragua 1
PA - Panama 1
PE - Perù 1
RO - Romania 1
RS - Serbia 1
SI - Slovenia 1
SN - Senegal 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TG - Togo 1
Totale 2.598
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Città #
Singapore 336
Santa Clara 246
Hong Kong 118
San Jose 108
Hefei 84
Ashburn 64
Beijing 61
Lauterbourg 54
Ho Chi Minh City 52
Seoul 37
Hanoi 36
Dallas 23
São Paulo 21
Los Angeles 20
Frankfurt am Main 10
Rio de Janeiro 10
Cavallino 9
Tokyo 9
Buffalo 7
Atlanta 6
Brasília 6
Chicago 6
Helsinki 6
New York 6
Philadelphia 6
Ribeirão Preto 6
Rome 6
Bengaluru 5
Can Tho 5
Fort Worth 5
Phoenix 5
Salvador 5
Tashkent 5
Austin 4
Biên Hòa 4
Brooklyn 4
Charlotte 4
Chennai 4
Curitiba 4
Düsseldorf 4
Lappeenranta 4
Las Vegas 4
Mexico City 4
Minamishinagawa 4
Naples 4
Nha Trang 4
Poplar 4
Recife 4
Santa Rosa 4
Almaty 3
Amsterdam 3
Aracaju 3
Arlington 3
Asunción 3
Baghdad 3
Buenos Aires 3
Caracas 3
Caxias do Sul 3
Da Nang 3
Figino 3
Guangzhou 3
Houston 3
Istanbul 3
Manchester 3
Milan 3
Montreal 3
Mumbai 3
Newark 3
Paris 3
Ribeirão das Neves 3
San Francisco 3
Sorocaba 3
St Louis 3
Thái Bình 3
Warsaw 3
Amman 2
Ankara 2
Augusta 2
Bangkok 2
Belo Horizonte 2
Birmingham 2
Boardman 2
Boca Raton 2
Bogotá 2
Bologna 2
Brentwood 2
Casablanca 2
Catania 2
Ciudad Benito Juárez 2
Council Bluffs 2
Cúcuta 2
Deerfield Beach 2
Dhaka 2
Dublin 2
El Paso 2
Elgin 2
Erie 2
Fortaleza 2
Grand Rapids 2
Guarulhos 2
Totale 1.575
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Nome #
Mechanical properties of amorphous Ge2Sb2Te5thin layers 96
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES 75
Measuring Techniques for the Semiconductor’s Parameters 71
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 68
Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes 61
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 59
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 58
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition 55
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters 55
Transient crystal grain nucleation in As doped amorphous silicon 51
Ion beam irradiation of phase change materials: A route to material properties investigation and engineering 50
Ion beam induced transient amorphous nucleation in silicon 49
Disordering process of GeSb2Te4 induced by ion irradiation 49
Selective diffusion of gold nanodots on nanopatterned substrates realized by self-assembly of diblock copolymers 48
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 48
CRYSTAL AMORPHOUS-SILICON INTERFACE KINETICS UNDER ION-BEAM IRRADIATION 47
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 47
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 46
Strain development and damage accumulation under ion irradiation of polycrystalline Ge-Sb-Te alloys 44
ION CHANNELING ANALYSIS OF EXTENDED-DEFECT ANNEALING IN SILICON BY RAPID THERMAL-PROCESSES 43
Investigation of Ag-assisted chemical etching on (100) and (111) contiguous silicon surfaces 43
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations 42
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 42
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 42
Structural transformations in Ge2Sb2Te5 under high pressure and temperature 41
Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications 41
STRUCTURAL CHARACTERIZATION OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS 40
Local electrical properties of the 4H-SiC(0001)/graphene interface 40
Atomic disordering processes in crystalline GeTe induced by ion irradiation 37
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 37
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 37
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON 36
Electroless deposition of silver investigated with rutherford backscattering and electron microscopy 36
ION-ASSISTED RECRYSTALLIZATION OF AMORPHOUS-SILICON 35
Evolution of the Transrotational Structure During Crystallization of Amorphous Ge(2)Sb(2)Te(5) Thin Films 33
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 33
Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface 32
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 31
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 31
Nanoscale modification of graphene transport properties by ion irradiation 30
Nucleation and grain growth in as deposited and ion implanted GeTe thin films 30
Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation 30
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films 29
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 29
Electroless deposition of gold investigated with rutherford backscattering and electron microscopy 28
Temperature dependent reaction of thin Ni-silicide transrotational layers on [001]Si 28
Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films 28
ION-ASSISTED CRYSTALLIZATION IN SILICON - EPITAXY AND GRAIN-GROWTH 27
Nucleation and growth of NiSi from Ni2Si transrotational domains (vol 90, pg 053507, 2007) 27
EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI LAYERS BY RAPID THERMAL ANNEALING 27
Pressure-induced amorphous Ge 2 Sb 2 Te 5 retention investigated by in situ X-Ray Diffraction 27
AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI 27
DIRECT-ENERGY PROCESSES AND PHASE-TRANSITIONS IN SILICON 26
REALIGNMENT OF AS DOPED SILICON FILMS DEPOSITED ON (100) SILICON SUBSTRATES 26
INFLUENCE OF OXYGEN ON THE ION-ASSISTED REGROWTH OF DEPOSITED SI LAYERS 26
KINETIC AND STRUCTURAL STUDY OF THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SI FILMS 26
AN ENERGY DISPERSION SPECTROSCOPY TECHNIQUE TO MEASURE TITANIUM SILICIDE LATERAL DIFFUSION 25
ROLE OF GRAIN-BOUNDARIES IN THE EPITAXIAL REALIGNMENT OF UNDOPED AND AS-DOPED POLYCRYSTALLINE SILICON FILMS 25
CONCENTRATION-DEPENDENCE AND INTERFACIAL INSTABILITIES DURING ION-BEAM ANNEALING OF ARSENIC-DOPED SILICON 24
PHENOMENOLOGICAL DESCRIPTION OF ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON 24
INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI 22
SIZE EFFECTS IN THE EPITAXIAL REALIGNMENT OF POLYCRYSTALLINE SILICON FILMS ONTO SI SUBSTRATES 22
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC 21
AMORPHOUS TO SINGLE-CRYSTAL TRANSITION IN SI INDUCED BY ION-BEAM IRRADIATION 21
RAPID THERMAL ANNEALING OF HOT IMPLANTS IN SILICON 21
ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS ON SI SUBSTRATES PROCESSED BY RAPID THERMAL ANNEALING 21
REALIGNMENT OF ARSENIC DOPED POLYCRYSTALLINE SI FILMS BY DOUBLE STEP ANNEALING 20
EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION 20
STRUCTURAL AND ELECTRICAL STUDY OF EPITAXIALLY REALIGNED SB-DOPED POLYCRYSTALLINE SI FILMS 17
Coalescence of silver clusters by immersion in diluted HF solution 17
EXTENDED DEFECT REMOVAL IN SILICON BY RAPID THERMAL ANNEALING 13
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Maskless nano-implant of 20 keV Ga+ in bulk Si(1 0 0) substrates 5
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Totale 2.638
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Categoria #
all - tutte 10.454
article - articoli 9.340
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 257
Totale 20.051
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202415 0 0 0 0 0 0 0 0 0 1 14 0
2024/2025967 6 5 98 30 229 21 50 37 22 39 225 205
2025/20261.353 53 155 130 212 279 46 217 78 62 53 41 27
2026/2027303 69 57 177 0 0 0 0 0 0 0 0 0
Totale 2.638