BRUNI, MARIA RITA
 Distribuzione geografica
Continente #
AS - Asia 40
NA - Nord America 14
EU - Europa 3
Totale 57
Nazione #
SG - Singapore 33
US - Stati Uniti d'America 14
CN - Cina 5
IT - Italia 2
GB - Regno Unito 1
KR - Corea 1
TR - Turchia 1
Totale 57
Città #
Singapore 27
Guangzhou 4
Ankara 1
London 1
Milan 1
Santa Clara 1
Seoul 1
Valenza 1
Totale 37
Nome #
Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures 5
Interface abruptness in strained III-V heterostructures 5
Growth and characterization of strained III-V heterostructures 4
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films 3
Depth profiling of InxGa1-xAs/GaAs quantum wells 3
Normalized reflection spectra in InxGa1-xAs/GaAs strained quantum wells: Structure and electronic properties 3
NORMALIZED REFLECTION SPECTRA IN GAAS/INXGA(1-X) AS SINGLE QUANTUM-WELLS - STRUCTURE CHARACTERIZATIONS AND EXCITONIC PROPERTIES 3
Depth profiling of InxGa1-xAs/GaAs superlattice 3
Exciton states in InxGa1-x As/GaAs double quantum wells: Normalized reflection spectra 2
Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells 2
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films 2
Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures 2
XPS study of the InxGa1-xAs/GaAs interfaces 2
Optical properties of stepped InxGa1-xAs/GaAs quantum wells 2
GLANCING ANGLE EXAFS INVESTIGATION OF INGAAS/GAAS STRAINED-LAYER MULTIPLE-QUANTUM WELLS - STRAIN AND BOND DISTANCES 2
Depth profiling of InxGa1-xAs/GaAs quantum wells 2
Second harmonic generation in stepped InAsGaAs/GaAs quantum wells 2
Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E. 2
DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY 2
Room-temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular-beam epitaxy 1
XPS and AES characterization of InP substrates for epitaxial growth 1
Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy 1
Electron Microscopy and X-ray Diffraction determinations of strain release in InGaAs/ GaAs superlattices grown by Molecular Beam Epitaxy 1
Optical properties of stepped InxGa1-xAs/GaAs quantum wells 1
Transmission electron microscopy, high resolution x-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layer 1
Totale 57
Categoria #
all - tutte 435
article - articoli 420
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 855


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20247 0 0 0 0 0 0 0 0 1 0 6 0
2024/202550 4 1 44 1 0 0 0 0 0 0 0 0
Totale 57