FRANCIOSI, ALFONSO
 Distribuzione geografica
Continente #
AS - Asia 1.268
NA - Nord America 798
EU - Europa 242
SA - Sud America 241
AF - Africa 37
Totale 2.586
Nazione #
US - Stati Uniti d'America 772
SG - Singapore 585
CN - Cina 266
BR - Brasile 202
VN - Vietnam 167
HK - Hong Kong 114
FR - Francia 84
KR - Corea 43
DE - Germania 35
GB - Regno Unito 29
IT - Italia 26
IN - India 16
JP - Giappone 16
FI - Finlandia 15
NL - Olanda 15
AR - Argentina 13
CA - Canada 13
EC - Ecuador 10
ZA - Sudafrica 10
MX - Messico 8
BD - Bangladesh 7
MA - Marocco 7
CO - Colombia 6
ID - Indonesia 6
IL - Israele 6
IQ - Iraq 6
PL - Polonia 5
SA - Arabia Saudita 5
TR - Turchia 5
UZ - Uzbekistan 5
CL - Cile 4
EG - Egitto 4
CH - Svizzera 3
DZ - Algeria 3
ES - Italia 3
JO - Giordania 3
PH - Filippine 3
PY - Paraguay 3
RU - Federazione Russa 3
SN - Senegal 3
UA - Ucraina 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AZ - Azerbaigian 2
GR - Grecia 2
IE - Irlanda 2
JM - Giamaica 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
OM - Oman 2
SE - Svezia 2
TN - Tunisia 2
AT - Austria 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GM - Gambi 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MD - Moldavia 1
MK - Macedonia 1
MY - Malesia 1
NG - Nigeria 1
PT - Portogallo 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
TW - Taiwan 1
UY - Uruguay 1
VE - Venezuela 1
ZM - Zambia 1
ZW - Zimbabwe 1
Totale 2.586
Città #
Santa Clara 382
Singapore 329
Hong Kong 110
Beijing 93
Hefei 90
San Jose 65
Lauterbourg 64
Ho Chi Minh City 50
Hanoi 49
Seoul 41
Ashburn 40
Los Angeles 37
Buffalo 14
Helsinki 12
São Paulo 12
Tokyo 12
Dallas 11
Curitiba 10
Frankfurt am Main 10
Trieste 10
Düsseldorf 9
New York 9
Rio de Janeiro 9
Falkenstein 7
Guayaquil 6
Chicago 5
Hải Dương 5
Nuremberg 5
Tashkent 5
Charlotte 4
Da Nang 4
Haiphong 4
London 4
Minamishinagawa 4
Thái Bình 4
Toronto 4
Amman 3
Belo Horizonte 3
Bexley 3
Biên Hòa 3
Brasília 3
Bắc Giang 3
City of London 3
Dakar 3
Fortaleza 3
Goiânia 3
Johannesburg 3
Joinville 3
Phủ Lý 3
Porto Alegre 3
Rabat 3
Riyadh 3
Rome 3
Roubaix 3
Udine 3
Vũng Tàu 3
Wroclaw 3
Zurich 3
Ahmedabad 2
Algiers 2
An Giang Province 2
Baku 2
Barranquilla 2
Betim 2
Bishkek 2
Bình An 2
Bảo Lộc 2
Bắc Ninh 2
Bến Tre 2
Cairo 2
Camaçari 2
Cape Town 2
Casablanca 2
Chengdu 2
Chennai 2
Cidade Ocidental 2
Cássia 2
Dublin 2
Glasgow 2
Hai Bà Trưng 2
Hamburg 2
Hangzhou 2
Houston 2
Jaraguá do Sul 2
Jeddah 2
Kingston 2
Kolkata 2
Limeira 2
Manchester 2
Montreal 2
Muscat 2
New Delhi 2
Ninh Bình 2
Nova Iguaçu 2
Orem 2
Poplar 2
Poços de Caldas 2
Quận Bốn 2
Ribeirão Preto 2
Riga 2
Totale 1.679
Nome #
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 78
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 72
Microscopic Mechanisms of Self-Compensation in Si delta-doped GaAs 61
Electrical characterization of engineered ZnSe/GaAs heterojunction diodes 59
Contactless Monitoring of the Diameter-Dependent Conductivity of GaAs Nanowires 55
Schottky barrier tunability in Al/ZnSe interfaces 54
High spatial resolution studies of microscopic capacitors in GaAs 54
ZnSe/CdTe/ZnSe heterostructures 53
Catalyst incorporation in nanowires 49
Fabrication and characterization of Mn-catalyzed GaAs nanowires 48
Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN 47
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires 46
Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles 44
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates 44
Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio 44
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 43
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 43
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 42
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 42
Stopping and Resuming at Will the Growth of GaAs Nanowires 42
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 40
Formation and dissolution of D-N complexes in dilute nitrides 40
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces 39
GaAs nanowires by Mn-catalysed molecular beam epitaxy 39
Silicon clustering in Si-GaAs ?-doped layers and superlattices 39
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 38
In-N and N-N correlation in InxGa1-xAs1-yNy/GaAs quasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study 38
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 38
Manganese-induced growth of GaAs nanowires 37
Nitrogen-induced hindering of in incorporation in InGaAsN 37
Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs 37
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy 37
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 36
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 36
Catalyst incorporation in ZnSe nanowires 36
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy 34
Structure and growth mechanism of ZnSe nanowires 34
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures 34
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalystassisted molecular-beam epitaxy 33
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 33
Tunable Schottky barrier contacts to InxGa1-xAs 32
Direct assessment of tunable Schottky barriers by internal photoemission spectroscopy 31
Zn preadsorption on GaAs(100)2×4 prior to ZnSe growth 31
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 31
ZnSe growth on lattice-matched InxGa1-xAs substrates 31
Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In0.04 Ga0.96 As layers 30
Controlling interface reactivity and Schottky barrier height in Au/ZnSe(001) junctions 30
High-resolution transmission electron microscopy to study very thin crystalline layers buried at an amorphous-crystalline interface 29
Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux 29
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx 28
Structural and electronic properties of ZnSe/AlAs heterostructures 27
Resonant second harmonic generation in ZnSe bulk microcavity 27
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures. 26
Interfacial engineering in blue-green lasers 25
Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy 24
Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes 24
CdTe epitaxial layers in ZnSe-based heterostructures 24
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx 24
Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions 24
Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions 23
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison. 23
Interface composition and stacking fault density in II-VI/III-V heterostructures 23
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3?m 23
ZnSe growth on lattice-matched InxGa1-xAs substrates 22
Band discontinuities in ZnMgSeÕZnCdSe 001 lattice-matched heterostructures 22
Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy 22
High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfaces 22
Andreev reflection in Si-engineered Al/InGaAs hybrid junctions 22
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy 21
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 21
Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures 21
Transitivity of the band offsets in II-VI/III-V heterojunctions 21
Site of Mn in Mn delta-doped GaAs: X-ray absorption spectroscopy 19
Andreev reflection in engineered Al/Si/InxGa1-xAs(001) junctions 15
Totale 2.602
Categoria #
all - tutte 8.775
article - articoli 8.037
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.812


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202417 0 0 0 0 0 0 0 0 0 1 14 2
2024/20251.132 5 3 81 47 300 97 3 72 40 30 218 236
2025/20261.453 74 113 148 267 290 68 264 68 56 74 31 0
Totale 2.602