CNR Institutional Research Information System

FRANCIOSI, ALFONSO
 Distribuzione geografica
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Continente #
AS - Asia 1.294
NA - Nord America 1.167
EU - Europa 286
SA - Sud America 258
AF - Africa 37
Continente sconosciuto - Info sul continente non disponibili 16
Totale 3.058
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Nazione #
US - Stati Uniti d'America 1.121
SG - Singapore 586
CN - Cina 266
BR - Brasile 207
VN - Vietnam 171
HK - Hong Kong 116
FR - Francia 85
IT - Italia 61
KR - Corea 43
DE - Germania 36
GB - Regno Unito 34
CA - Canada 23
BD - Bangladesh 16
IN - India 16
JP - Giappone 16
FI - Finlandia 15
NL - Olanda 15
AR - Argentina 14
CO - Colombia 14
EC - Ecuador 11
MX - Messico 10
ZA - Sudafrica 10
ID - Indonesia 9
MA - Marocco 7
IL - Israele 6
IQ - Iraq 6
PH - Filippine 5
PL - Polonia 5
SA - Arabia Saudita 5
TR - Turchia 5
UZ - Uzbekistan 5
CL - Cile 4
EG - Egitto 4
ES - Italia 4
GT - Guatemala 4
AE - Emirati Arabi Uniti 3
CH - Svizzera 3
DZ - Algeria 3
JO - Giordania 3
PY - Paraguay 3
RU - Federazione Russa 3
SE - Svezia 3
SN - Senegal 3
UA - Ucraina 3
VE - Venezuela 3
AL - Albania 2
AZ - Azerbaigian 2
CR - Costa Rica 2
GR - Grecia 2
HN - Honduras 2
IE - Irlanda 2
JM - Giamaica 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
MY - Malesia 2
OM - Oman 2
TH - Thailandia 2
TN - Tunisia 2
AT - Austria 1
BH - Bahrain 1
BL - Saint Barthelemy 1
BO - Bolivia 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CZ - Repubblica Ceca 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GM - Gambi 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MD - Moldavia 1
MK - Macedonia 1
NG - Nigeria 1
PK - Pakistan 1
PT - Portogallo 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
TW - Taiwan 1
UY - Uruguay 1
ZM - Zambia 1
ZW - Zimbabwe 1
Totale 3.042
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Città #
Santa Clara 388
Singapore 330
San Jose 164
Hong Kong 110
Beijing 93
Hefei 90
Ashburn 73
Lauterbourg 64
Ho Chi Minh City 53
Hanoi 49
Seoul 41
Los Angeles 39
Buffalo 15
Dallas 13
Helsinki 12
São Paulo 12
Tokyo 12
New York 11
Trieste 11
Curitiba 10
Frankfurt am Main 10
Düsseldorf 9
Rio de Janeiro 9
Charlotte 7
Chicago 7
Falkenstein 7
Rome 7
Guayaquil 6
Toronto 6
Brasília 5
Hải Dương 5
Nuremberg 5
Phoenix 5
Tashkent 5
Council Bluffs 4
Da Nang 4
Guatemala City 4
Haiphong 4
London 4
Minamishinagawa 4
Montreal 4
Thái Bình 4
Amman 3
Bari 3
Belo Horizonte 3
Bexley 3
Biên Hòa 3
Brooklyn 3
Burlington 3
Bắc Giang 3
City of London 3
Dakar 3
Florissant 3
Fort Lauderdale 3
Fortaleza 3
Goiânia 3
Houston 3
Johannesburg 3
Joinville 3
Milan 3
Murrieta 3
Newark 3
Phủ Lý 3
Porto Alegre 3
Rabat 3
Riyadh 3
Roubaix 3
San Francisco 3
Tallahassee 3
Udine 3
Vũng Tàu 3
Wroclaw 3
Zurich 3
Ahmedabad 2
Algiers 2
Alpharetta 2
An Giang Province 2
Arlington 2
Atlanta 2
Baku 2
Bangkok 2
Barranquilla 2
Baton Rouge 2
Betim 2
Bishkek 2
Bologna 2
Bridgeport 2
Bình An 2
Bảo Lộc 2
Bắc Ninh 2
Bến Tre 2
Cagliari 2
Cairo 2
Calgary 2
Camaçari 2
Cape Town 2
Casablanca 2
Chengdu 2
Chennai 2
Chesapeake 2
Totale 1.862
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Nome #
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 85
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 80
Contactless Monitoring of the Diameter-Dependent Conductivity of GaAs Nanowires 66
Microscopic Mechanisms of Self-Compensation in Si delta-doped GaAs 65
Electrical characterization of engineered ZnSe/GaAs heterojunction diodes 64
High spatial resolution studies of microscopic capacitors in GaAs 63
Silicon clustering in Si-GaAs ?-doped layers and superlattices 60
ZnSe/CdTe/ZnSe heterostructures 59
Schottky barrier tunability in Al/ZnSe interfaces 58
Catalyst incorporation in nanowires 57
Fabrication and characterization of Mn-catalyzed GaAs nanowires 57
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires 56
Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio 54
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates 53
Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN 53
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 51
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 51
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 50
Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles 49
Formation and dissolution of D-N complexes in dilute nitrides 49
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 48
Stopping and Resuming at Will the Growth of GaAs Nanowires 47
Catalyst incorporation in ZnSe nanowires 47
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy 46
GaAs nanowires by Mn-catalysed molecular beam epitaxy 46
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 46
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy 45
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 45
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 45
Manganese-induced growth of GaAs nanowires 44
Nitrogen-induced hindering of in incorporation in InGaAsN 44
In-N and N-N correlation in InxGa1-xAs1-yNy/GaAs quasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study 44
Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs 44
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces 44
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 41
Structure and growth mechanism of ZnSe nanowires 41
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 41
Direct assessment of tunable Schottky barriers by internal photoemission spectroscopy 39
Tunable Schottky barrier contacts to InxGa1-xAs 38
ZnSe growth on lattice-matched InxGa1-xAs substrates 38
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures 38
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 37
Zn preadsorption on GaAs(100)2×4 prior to ZnSe growth 36
Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux 36
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalystassisted molecular-beam epitaxy 35
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 35
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures. 34
Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In0.04 Ga0.96 As layers 33
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3?m 33
High-resolution transmission electron microscopy to study very thin crystalline layers buried at an amorphous-crystalline interface 33
Controlling interface reactivity and Schottky barrier height in Au/ZnSe(001) junctions 32
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx 32
Structural and electronic properties of ZnSe/AlAs heterostructures 32
Resonant second harmonic generation in ZnSe bulk microcavity 31
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison. 30
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx 30
Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy 29
Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions 28
Interfacial engineering in blue-green lasers 28
ZnSe growth on lattice-matched InxGa1-xAs substrates 27
Interface composition and stacking fault density in II-VI/III-V heterostructures 27
CdTe epitaxial layers in ZnSe-based heterostructures 27
Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy 27
Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions 27
Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes 26
Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures 26
High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfaces 26
Andreev reflection in Si-engineered Al/InGaAs hybrid junctions 26
Transitivity of the band offsets in II-VI/III-V heterojunctions 26
Band discontinuities in ZnMgSeÕZnCdSe 001 lattice-matched heterostructures 25
Site of Mn in Mn delta-doped GaAs: X-ray absorption spectroscopy 24
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy 24
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 24
Andreev reflection in engineered Al/Si/InxGa1-xAs(001) junctions 21
Totale 3.058
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Categoria #
all - tutte 11.085
article - articoli 10.133
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.218
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202417 0 0 0 0 0 0 0 0 0 1 14 2
2024/20251.132 5 3 81 47 300 97 3 72 40 30 218 236
2025/20261.552 74 113 148 267 290 68 264 68 56 74 34 96
2026/2027357 106 60 191 0 0 0 0 0 0 0 0 0
Totale 3.058