CNR Institutional Research Information System

FRANCIOSI, ALFONSO
 Distribuzione geografica
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Continente #
AS - Asia 1.280
NA - Nord America 977
EU - Europa 251
SA - Sud America 242
AF - Africa 37
Continente sconosciuto - Info sul continente non disponibili 16
Totale 2.803
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Nazione #
US - Stati Uniti d'America 941
SG - Singapore 586
CN - Cina 266
BR - Brasile 202
VN - Vietnam 169
HK - Hong Kong 115
FR - Francia 85
KR - Corea 43
DE - Germania 35
IT - Italia 33
GB - Regno Unito 29
CA - Canada 21
IN - India 16
JP - Giappone 16
FI - Finlandia 15
NL - Olanda 15
AR - Argentina 13
BD - Bangladesh 13
EC - Ecuador 11
ZA - Sudafrica 10
MX - Messico 9
MA - Marocco 7
CO - Colombia 6
ID - Indonesia 6
IL - Israele 6
IQ - Iraq 6
PL - Polonia 5
SA - Arabia Saudita 5
TR - Turchia 5
UZ - Uzbekistan 5
CL - Cile 4
EG - Egitto 4
CH - Svizzera 3
DZ - Algeria 3
ES - Italia 3
JO - Giordania 3
PH - Filippine 3
PY - Paraguay 3
RU - Federazione Russa 3
SE - Svezia 3
SN - Senegal 3
UA - Ucraina 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AZ - Azerbaigian 2
GR - Grecia 2
IE - Irlanda 2
JM - Giamaica 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
MY - Malesia 2
OM - Oman 2
TN - Tunisia 2
AT - Austria 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GM - Gambi 1
GT - Guatemala 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MD - Moldavia 1
MK - Macedonia 1
NG - Nigeria 1
PT - Portogallo 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TW - Taiwan 1
UY - Uruguay 1
VE - Venezuela 1
ZM - Zambia 1
ZW - Zimbabwe 1
Totale 2.787
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Città #
Santa Clara 388
Singapore 330
San Jose 129
Hong Kong 110
Beijing 93
Hefei 90
Ashburn 64
Lauterbourg 64
Ho Chi Minh City 51
Hanoi 49
Seoul 41
Los Angeles 37
Buffalo 14
Dallas 12
Helsinki 12
São Paulo 12
Tokyo 12
Trieste 11
Curitiba 10
Frankfurt am Main 10
New York 10
Düsseldorf 9
Rio de Janeiro 9
Falkenstein 7
Chicago 6
Guayaquil 6
Toronto 6
Hải Dương 5
Nuremberg 5
Rome 5
Tashkent 5
Charlotte 4
Da Nang 4
Haiphong 4
London 4
Minamishinagawa 4
Montreal 4
Thái Bình 4
Amman 3
Belo Horizonte 3
Bexley 3
Biên Hòa 3
Brasília 3
Bắc Giang 3
City of London 3
Dakar 3
Fort Lauderdale 3
Fortaleza 3
Goiânia 3
Johannesburg 3
Joinville 3
Murrieta 3
Phủ Lý 3
Porto Alegre 3
Rabat 3
Riyadh 3
Roubaix 3
Udine 3
Vũng Tàu 3
Wroclaw 3
Zurich 3
Ahmedabad 2
Algiers 2
Alpharetta 2
An Giang Province 2
Arlington 2
Baku 2
Barranquilla 2
Betim 2
Bishkek 2
Bridgeport 2
Bình An 2
Bảo Lộc 2
Bắc Ninh 2
Bến Tre 2
Cairo 2
Calgary 2
Camaçari 2
Cape Town 2
Casablanca 2
Chengdu 2
Chennai 2
Chesapeake 2
Cidade Ocidental 2
Clinton Township 2
Cássia 2
Dublin 2
Dubuque 2
Fort Smith 2
Glasgow 2
Hai Bà Trưng 2
Hamburg 2
Hangzhou 2
Houston 2
Jaraguá do Sul 2
Jeddah 2
Kahului 2
Kingston 2
Kolkata 2
Limeira 2
Totale 1.787
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Nome #
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs 79
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 73
Microscopic Mechanisms of Self-Compensation in Si delta-doped GaAs 63
Contactless Monitoring of the Diameter-Dependent Conductivity of GaAs Nanowires 61
Electrical characterization of engineered ZnSe/GaAs heterojunction diodes 60
High spatial resolution studies of microscopic capacitors in GaAs 59
ZnSe/CdTe/ZnSe heterostructures 56
Catalyst incorporation in nanowires 56
Schottky barrier tunability in Al/ZnSe interfaces 55
Silicon clustering in Si-GaAs ?-doped layers and superlattices 55
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires 52
Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN 51
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates 50
Fabrication and characterization of Mn-catalyzed GaAs nanowires 49
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 48
Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles 46
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 46
Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio 46
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors 45
Formation and dissolution of D-N complexes in dilute nitrides 45
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy 45
Stopping and Resuming at Will the Growth of GaAs Nanowires 45
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 43
In-N and N-N correlation in InxGa1-xAs1-yNy/GaAs quasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study 43
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 43
Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model 42
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces 42
Catalyst incorporation in ZnSe nanowires 42
Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy 40
Nitrogen-induced hindering of in incorporation in InGaAsN 40
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 40
Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs 40
GaAs nanowires by Mn-catalysed molecular beam epitaxy 40
Manganese-induced growth of GaAs nanowires 39
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 38
Structure and growth mechanism of ZnSe nanowires 38
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 38
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 36
Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures 35
Low-temperature synthesis of ZnSe nanowires and nanosaws by catalystassisted molecular-beam epitaxy 34
Tunable Schottky barrier contacts to InxGa1-xAs 34
Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux 33
Direct assessment of tunable Schottky barriers by internal photoemission spectroscopy 32
Zn preadsorption on GaAs(100)2×4 prior to ZnSe growth 32
Reflectionless tunneling in planar Nb/GaAs hybrid junctions 32
ZnSe growth on lattice-matched InxGa1-xAs substrates 32
Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In0.04 Ga0.96 As layers 31
Controlling interface reactivity and Schottky barrier height in Au/ZnSe(001) junctions 31
High-resolution transmission electron microscopy to study very thin crystalline layers buried at an amorphous-crystalline interface 31
High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures. 30
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx 29
Structural and electronic properties of ZnSe/AlAs heterostructures 29
InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: a comparison. 28
Resonant second harmonic generation in ZnSe bulk microcavity 28
Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy 26
Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3?m 26
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx 26
Interfacial engineering in blue-green lasers 26
Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions 25
Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes 25
CdTe epitaxial layers in ZnSe-based heterostructures 25
High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfaces 25
Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions 25
ZnSe growth on lattice-matched InxGa1-xAs substrates 24
Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy 24
Interface composition and stacking fault density in II-VI/III-V heterostructures 23
Band discontinuities in ZnMgSeÕZnCdSe 001 lattice-matched heterostructures 23
Andreev reflection in Si-engineered Al/InGaAs hybrid junctions 23
High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy 22
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 22
Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures 22
Transitivity of the band offsets in II-VI/III-V heterojunctions 22
Site of Mn in Mn delta-doped GaAs: X-ray absorption spectroscopy 20
Andreev reflection in engineered Al/Si/InxGa1-xAs(001) junctions 19
Totale 2.803
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Categoria #
all - tutte 10.043
article - articoli 9.197
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.240
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202417 0 0 0 0 0 0 0 0 0 1 14 2
2024/20251.132 5 3 81 47 300 97 3 72 40 30 218 236
2025/20261.552 74 113 148 267 290 68 264 68 56 74 34 96
2026/2027102 102 0 0 0 0 0 0 0 0 0 0 0
Totale 2.803