CNR Institutional Research Information System

VIVONA, MARILENA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 1.070
NA - Nord America 768
EU - Europa 330
SA - Sud America 219
Continente sconosciuto - Info sul continente non disponibili 97
AF - Africa 21
Totale 2.505
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 715
SG - Singapore 415
CN - Cina 282
BR - Brasile 172
IT - Italia 123
VN - Vietnam 104
HK - Hong Kong 82
FR - Francia 61
KR - Corea 50
NL - Olanda 33
FI - Finlandia 29
CA - Canada 23
IN - India 22
JP - Giappone 22
AR - Argentina 19
GB - Regno Unito 17
ID - Indonesia 16
BD - Bangladesh 13
DE - Germania 11
CO - Colombia 10
IL - Israele 10
TH - Thailandia 10
PL - Polonia 9
EC - Ecuador 8
MX - Messico 8
TT - Trinidad e Tobago 7
IQ - Iraq 6
RU - Federazione Russa 6
ZA - Sudafrica 6
CR - Costa Rica 5
JM - Giamaica 5
PH - Filippine 5
UA - Ucraina 5
HN - Honduras 4
MY - Malesia 4
PT - Portogallo 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
CL - Cile 3
ES - Italia 3
IE - Irlanda 3
LT - Lituania 3
SA - Arabia Saudita 3
TR - Turchia 3
TW - Taiwan 3
CH - Svizzera 2
CZ - Repubblica Ceca 2
EG - Egitto 2
KE - Kenya 2
KG - Kirghizistan 2
LB - Libano 2
MA - Marocco 2
OM - Oman 2
PY - Paraguay 2
SE - Svezia 2
TN - Tunisia 2
UZ - Uzbekistan 2
AL - Albania 1
AT - Austria 1
AZ - Azerbaigian 1
BB - Barbados 1
BE - Belgio 1
BG - Bulgaria 1
CG - Congo 1
CI - Costa d'Avorio 1
CM - Camerun 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
DJ - Gibuti 1
DK - Danimarca 1
DZ - Algeria 1
EE - Estonia 1
GR - Grecia 1
HR - Croazia 1
IM - Isola di Man 1
IS - Islanda 1
JO - Giordania 1
KW - Kuwait 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
NA - Namibia 1
NO - Norvegia 1
NP - Nepal 1
PE - Perù 1
PK - Pakistan 1
QA - Qatar 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 2.410
Salva come PNG Salva come JPEG
Città #
Singapore 259
San Jose 125
Hefei 120
Santa Clara 88
Hong Kong 82
Ashburn 70
Beijing 62
Lauterbourg 50
Seoul 49
Los Angeles 38
Ho Chi Minh City 37
Hanoi 23
Dallas 21
New York 21
Lappeenranta 18
Cavallino 16
São Paulo 13
Council Bluffs 12
Tokyo 12
Rome 10
Buffalo 9
Haiphong 9
Messina 9
Bangkok 8
Milan 8
Minamishinagawa 8
Orem 8
Denver 7
Jakarta 7
Warsaw 7
Da Nang 6
Helsinki 6
Amsterdam 5
Chennai 5
Curitiba 5
Houston 5
Phoenix 5
Piracicaba 5
Quito 5
Rio de Janeiro 5
San José 5
Turku 5
Atlanta 4
Baghdad 4
Bengaluru 4
Blumenau 4
Casale sul Sile 4
Catania 4
Chicago 4
Frankfurt am Main 4
Kingston 4
Kuala Selangor 4
Manila 4
Miami 4
Montreal 4
Pittsburgh 4
Recife 4
Seattle 4
Toronto 4
Trieste 4
Washington 4
Bologna 3
Brooklyn 3
Buenos Aires 3
Campinas 3
Chaguanas 3
Dublin 3
Feira de Santana 3
Guarulhos 3
Hải Dương 3
Newark 3
Newnan 3
Ottawa 3
Plainfield 3
Poplar 3
Queens 3
San Gregorio di Catania 3
Akron 2
Alexandria 2
Alvorada 2
Ancona 2
Augusta 2
Balikpapan 2
Bari 2
Bogotá 2
Boston 2
Brasília 2
Bucaramanga 2
Cairo 2
Charlotte 2
Chengdu 2
Columbia 2
Corpus Christi 2
Dhaka 2
Erechim 2
Falkenstein 2
Folsom 2
Genoa 2
Goiânia 2
Greenfield Park 2
Totale 1.438
Salva come PNG Salva come JPEG
Nome #
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors 96
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 83
Materials and Processes for Schottky Contacts on Silicon Carbide 78
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 76
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 76
Ti/Al-based contacts to p-type SiC and GaN for power device applications 73
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 73
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 70
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 68
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 66
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 64
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 63
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 61
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 61
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 60
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process 59
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC 58
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 55
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 54
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 53
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 53
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures 51
Processing Issues for Reliable 4H-SiC MOSFET 50
Ni/Heavily-Doped 4H-SiC Schottky Contacts 50
Selective Doping in Silicon Carbide Power Devices 49
Barrier height tuning in Ti/4H-SiC Schottky diodes 48
Silicon Carbide: Material Growth, Device Processing, and Applications 47
Non-destructive characterization of rare-earth-doped optical fiber preforms 45
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering 45
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 40
Metal/semiconductor contacts to silicon carbide: Physics and technology 40
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 39
Temperature-dependence study of the gate current in SiO2/4H-SiC MOS capacitors 38
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements 38
Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers 35
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 34
Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers 34
Preliminary study on the effect of micrometric Ge-droplets on the characteristics of Ni/4H-SiC Schottky contacts 33
Recent advances on dielectrics technology for SiC and GaN power devices 32
Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC 31
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 29
X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions 29
Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate 28
Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC 28
Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate 28
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC 26
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices 26
Influence of processing conditions on the behaviour of 4H-SiC MOSFETs 25
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 25
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 23
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition 21
Nanoscale reliability aspects of insulator onto wide band gap compounds 21
Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC 17
Totale 2.505
Salva come PNG Salva come JPEG
Categoria #
all - tutte 9.011
article - articoli 7.627
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.638
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20244 0 0 0 0 0 0 0 0 0 0 4 0
2024/2025831 1 2 48 19 77 86 53 61 24 41 211 208
2025/20261.327 95 144 131 200 185 66 193 105 65 85 41 17
2026/2027343 88 73 182 0 0 0 0 0 0 0 0 0
Totale 2.505