CNR Institutional Research Information System

VIVONA, MARILENA
 Distribuzione geografica
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Continente #
AS - Asia 1.050
NA - Nord America 489
EU - Europa 295
SA - Sud America 207
AF - Africa 21
Continente sconosciuto - Info sul continente non disponibili 2
Totale 2.064
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Nazione #
US - Stati Uniti d'America 464
SG - Singapore 411
CN - Cina 279
BR - Brasile 168
VN - Vietnam 101
IT - Italia 99
HK - Hong Kong 82
FR - Francia 61
KR - Corea 50
NL - Olanda 33
FI - Finlandia 29
IN - India 22
JP - Giappone 22
AR - Argentina 18
CA - Canada 12
GB - Regno Unito 12
ID - Indonesia 12
BD - Bangladesh 11
DE - Germania 11
IL - Israele 10
PL - Polonia 9
EC - Ecuador 8
TH - Thailandia 8
IQ - Iraq 6
RU - Federazione Russa 6
ZA - Sudafrica 6
CO - Colombia 5
MX - Messico 5
PH - Filippine 5
MY - Malesia 4
PT - Portogallo 4
TT - Trinidad e Tobago 4
UA - Ucraina 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
ES - Italia 3
IE - Irlanda 3
LT - Lituania 3
SA - Arabia Saudita 3
TR - Turchia 3
CR - Costa Rica 2
CZ - Repubblica Ceca 2
EG - Egitto 2
JM - Giamaica 2
KE - Kenya 2
KG - Kirghizistan 2
LB - Libano 2
MA - Marocco 2
OM - Oman 2
PY - Paraguay 2
SE - Svezia 2
TN - Tunisia 2
UZ - Uzbekistan 2
AL - Albania 1
AT - Austria 1
AZ - Azerbaigian 1
BE - Belgio 1
BG - Bulgaria 1
BO - Bolivia 1
CG - Congo 1
CI - Costa d'Avorio 1
CM - Camerun 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
DJ - Gibuti 1
DK - Danimarca 1
DZ - Algeria 1
GR - Grecia 1
HR - Croazia 1
JO - Giordania 1
KW - Kuwait 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
NA - Namibia 1
NO - Norvegia 1
NP - Nepal 1
PE - Perù 1
PK - Pakistan 1
QA - Qatar 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TW - Taiwan 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 2.064
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Città #
Singapore 258
Hefei 120
San Jose 92
Hong Kong 82
Santa Clara 80
Beijing 62
Lauterbourg 50
Seoul 49
Ashburn 38
Ho Chi Minh City 37
Los Angeles 37
Hanoi 22
Dallas 21
Lappeenranta 18
Cavallino 16
New York 13
São Paulo 12
Tokyo 12
Haiphong 9
Messina 9
Bangkok 8
Milan 8
Minamishinagawa 8
Orem 8
Jakarta 7
Rome 7
Warsaw 7
Denver 6
Helsinki 6
Amsterdam 5
Buffalo 5
Chennai 5
Curitiba 5
Da Nang 5
Piracicaba 5
Quito 5
Rio de Janeiro 5
Turku 5
Baghdad 4
Bengaluru 4
Blumenau 4
Casale sul Sile 4
Catania 4
Council Bluffs 4
Frankfurt am Main 4
Kuala Selangor 4
Manila 4
Phoenix 4
Recife 4
Trieste 4
Bologna 3
Brooklyn 3
Buenos Aires 3
Campinas 3
Dublin 3
Feira de Santana 3
Guarulhos 3
Hải Dương 3
Ottawa 3
Poplar 3
San Gregorio di Catania 3
Seattle 3
Alexandria 2
Alvorada 2
Boston 2
Cairo 2
Chengdu 2
Dhaka 2
Erechim 2
Falkenstein 2
Goiânia 2
Guangzhou 2
Huế 2
Istanbul 2
Johannesburg 2
Juneau 2
La Plata 2
Manaus 2
Maringá 2
Marseille 2
Montreal 2
Moscow 2
Naples 2
Ninh Bình 2
Olomouc 2
Piscataway 2
Porto Alegre 2
Quilmes 2
Quận Một 2
San Francisco 2
San José 2
Santa Cruz do Sul 2
Shijiazhuang 2
Stockholm 2
Surabaya 2
São Carlos 2
São José dos Campos 2
São João del Rei 2
Tashkent 2
Thanh Hóa 2
Totale 1.307
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Nome #
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors 90
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 79
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 71
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 68
Ti/Al-based contacts to p-type SiC and GaN for power device applications 65
Materials and Processes for Schottky Contacts on Silicon Carbide 64
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 63
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 61
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 59
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 58
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 56
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 55
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 54
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 52
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process 51
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 51
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC 49
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 49
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures 48
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 46
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 45
Processing Issues for Reliable 4H-SiC MOSFET 44
Selective Doping in Silicon Carbide Power Devices 44
Ni/Heavily-Doped 4H-SiC Schottky Contacts 44
Barrier height tuning in Ti/4H-SiC Schottky diodes 42
Silicon Carbide: Material Growth, Device Processing, and Applications 42
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering 40
Non-destructive characterization of rare-earth-doped optical fiber preforms 39
Metal/semiconductor contacts to silicon carbide: Physics and technology 34
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 33
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements 31
Temperature-dependence study of the gate current in SiO2/4H-SiC MOS capacitors 30
Preliminary study on the effect of micrometric Ge-droplets on the characteristics of Ni/4H-SiC Schottky contacts 29
Recent advances on dielectrics technology for SiC and GaN power devices 28
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 27
Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers 27
Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers 26
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 26
Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate 25
X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions 25
Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC 24
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 23
Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate 23
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC 22
Influence of processing conditions on the behaviour of 4H-SiC MOSFETs 21
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 21
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 20
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices 20
Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC 18
Nanoscale reliability aspects of insulator onto wide band gap compounds 18
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition 17
Impact of Processing Parameters on Ti Schottky Contacts on 4H-SiC 9
Totale 2.159
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Categoria #
all - tutte 7.556
article - articoli 6.386
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.942
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/20244 0 0 0 0 0 0 0 0 0 0 4 0
2024/2025831 1 2 48 19 77 86 53 61 24 41 211 208
2025/20261.324 95 144 131 200 185 66 193 105 65 85 41 14
Totale 2.159