CNR Institutional Research Information System

LO NIGRO, RAFFAELLA
 Distribuzione geografica
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Continente #
AS - Asia 3.919
NA - Nord America 1.605
EU - Europa 649
SA - Sud America 617
AF - Africa 56
OC - Oceania 5
Totale 6.851
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Nazione #
SG - Singapore 1.618
US - Stati Uniti d'America 1.539
CN - Cina 1.044
BR - Brasile 512
HK - Hong Kong 365
VN - Vietnam 363
KR - Corea 224
FR - Francia 207
IT - Italia 160
NL - Olanda 71
IN - India 62
JP - Giappone 59
FI - Finlandia 50
GB - Regno Unito 42
DE - Germania 34
IL - Israele 31
AR - Argentina 30
BD - Bangladesh 25
CA - Canada 25
EC - Ecuador 23
IQ - Iraq 20
MX - Messico 18
ID - Indonesia 16
CO - Colombia 15
SA - Arabia Saudita 15
TR - Turchia 13
ZA - Sudafrica 12
PL - Polonia 11
PY - Paraguay 10
UA - Ucraina 10
RU - Federazione Russa 9
UZ - Uzbekistan 9
VE - Venezuela 9
ES - Italia 8
JO - Giordania 8
KE - Kenya 8
PK - Pakistan 8
CL - Cile 7
DZ - Algeria 7
PE - Perù 7
AT - Austria 6
CR - Costa Rica 6
EG - Egitto 6
MA - Marocco 6
MY - Malesia 6
AE - Emirati Arabi Uniti 5
JM - Giamaica 5
LB - Libano 5
RO - Romania 5
IE - Irlanda 4
SE - Svezia 4
TN - Tunisia 4
UY - Uruguay 4
GT - Guatemala 3
MD - Moldavia 3
NO - Norvegia 3
NP - Nepal 3
NZ - Nuova Zelanda 3
OM - Oman 3
PH - Filippine 3
SK - Slovacchia (Repubblica Slovacca) 3
TW - Taiwan 3
AF - Afghanistan, Repubblica islamica di 2
AO - Angola 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BG - Bulgaria 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
ET - Etiopia 2
HN - Honduras 2
HR - Croazia 2
KZ - Kazakistan 2
PT - Portogallo 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AL - Albania 1
AU - Australia 1
BB - Barbados 1
BJ - Benin 1
BS - Bahamas 1
BW - Botswana 1
BY - Bielorussia 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GR - Grecia 1
HU - Ungheria 1
KG - Kirghizistan 1
KW - Kuwait 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
LY - Libia 1
MG - Madagascar 1
ML - Mali 1
MR - Mauritania 1
NA - Namibia 1
NG - Nigeria 1
PA - Panama 1
PR - Porto Rico 1
Totale 6.849
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Città #
Singapore 987
Hefei 539
Santa Clara 447
Hong Kong 363
San Jose 335
Seoul 222
Lauterbourg 177
Beijing 154
Ho Chi Minh City 110
Ashburn 107
Hanoi 94
Los Angeles 83
São Paulo 49
Dallas 46
Buffalo 34
Minamishinagawa 31
Helsinki 27
New York 27
Tokyo 21
Bengaluru 19
Haiphong 19
Catania 18
Da Nang 17
Lappeenranta 15
Cavallino 14
Guangzhou 14
Orem 14
Milan 12
Frankfurt am Main 11
Baghdad 10
Brooklyn 10
Quito 10
Rio de Janeiro 10
Rome 10
Amman 8
Brasília 8
Chennai 8
Curitiba 8
Houston 8
Hải Dương 8
Jeddah 8
Ninh Bình 8
Tashkent 8
Turku 8
Warsaw 8
Chicago 7
Council Bluffs 7
Guayaquil 7
Messina 7
Montreal 7
Mumbai 7
Nairobi 7
Phoenix 7
Shanghai 7
Thái Bình 7
Amsterdam 6
Asunción 6
Biên Hòa 6
Bologna 6
Guarulhos 6
Istanbul 6
Johannesburg 6
Naples 6
Padova 6
Palermo 6
Belo Horizonte 5
Chengdu 5
Dhaka 5
Diadema 5
Fortaleza 5
Lima 5
Limeira 5
Manchester 5
Miami 5
Munich 5
Quận Bốn 5
Quận Một 5
Rio Grande 5
San José 5
Santo André 5
Seattle 5
Vienna 5
Assago 4
Bitonto 4
Bắc Ninh 4
Cairo 4
Campinas 4
Can Tho 4
Cotia 4
Criciúma 4
Dammam 4
Denver 4
Falkenstein 4
Kolkata 4
Kuala Lumpur 4
London 4
Manaus 4
Montevideo 4
Nha Trang 4
Osaka 4
Totale 4.431
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 114
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 101
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 98
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 93
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 88
Nano-electrical characterization of praseodymium oxide on silicon by conductive atomic force microscopy (C-AFM) 77
Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO3 ceramics 74
Influence of substrate dielectric permittivity on local capacitive behavior in graphene 72
Challenges for energy efficient wide band gap semiconductors power devices 70
Structural-Optical study of high-dielectric-constant oxide films combining 0.75-6.5 eV ellipsometry and XRD 69
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 69
Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties 66
Scanning Capacitance Microscopy in Microelectronics 65
Ti/Al-based contacts to p-type SiC and GaN for power device applications 65
Fabrication of LaAlO3/Pt(100)/Hastelloy C276 and CeO2(100)/Pt(100)/Hastelloy C276 multilayers by metallorganic chemical vapor deposition 62
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 61
Fabrication of Eu-TiO2 NCs functionalized cotton textile as a multifunctional photocatalyst for dye pollutants degradation 61
Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films 60
High capacitance density by CaCu3Ti4O12 thin films 60
ASSEMBLY OF A SUCCINYL-CALIX[4]ARENE DERIVATIVE IN MULTILAMELLAR VESICLES 59
Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process 57
Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments 56
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 56
CaCu3TiO12 thin films on conductive oxide electrode: a comparative study between chemical and physical vapor deposition routes 56
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Praseodymium based dielectrics: Metal-Organic Chemical Vapor Deposition (MOCVD) growth, characterization and applications 56
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 54
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 53
Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films 52
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 52
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 52
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 52
Thin films advanced dielectrics for high frequency applications: deposition, (nano)characterization and device fabrication 50
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity 50
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC 49
CaCu3Ti4O12 thin films for capacitive applications: MOCVD synthesis and nanoscopic microscopic characterization 49
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 49
Metal-Organic Chemical Vapor Deposition of Pr2O3 films on silicon substrates 48
Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates 48
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 48
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 48
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures 48
Thermal stability of amorphous praseodymium silicate films on Si 47
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 47
Relationship between precursor nature and NiO properties 45
Yttrium beta-diketonate glyme MOCVD precursors: Effects of the polyether length on stabilities, mass transport properties and coordination spheres 43
Nanotechnology for Electronic Materials and Devices 43
Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials 43
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 42
CaCu(3)Ti(4)O(12) single crystals: insights on growth and nanoscopic investigation 42
MOCVD of praseodymium based films high k dielectric deposited on silicon substrate 41
From micro- to nanotransport properties in Pr2O3-based thin layers 40
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 40
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 40
Potentialities of nickel oxide as dielectric for GaN and SiC devices 39
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 39
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 39
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices 38
Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films 38
Control of heteroepitaxial growth of CaCu3Ti4O12 films on SrTiO3 substrates by MOCVD 38
Hydroxycinnamic acids loaded in lipid-core nanocapsules 37
A Template Metal-Organic Chemical Vapour Deposition Route to the Fabrication of Free Standing Co3O4 Nanotube Arrays 37
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 37
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 37
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 37
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors 36
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 36
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 36
High capacitance density capacitors based on calcium copper titanate thin films grown by MOCVD 35
Metal-organic chemical vapor deposition of CeO2 < 100 > oriented films on no-rolled Hastelloy C276 34
Assembly of a Succinyl Acid Calix[4]arene Derivative in a Multilamellar Vesicle and a Preliminary Study of a Hydrophobic and Hydrophilic Guest Loading 34
Metal/semiconductor contacts to silicon carbide: Physics and technology 34
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 34
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 33
An investigation on the use of liquid phase photo-deposition for the preparation of supported Pt catalysts 33
Morphological and structural control of nanostructured < 100 > oriented CeO2 films grown on random metallic substrates 33
MOCVD Growth of Rare Earth Oxides: The Case of the Praseodymium/Oxygen System 33
Colossal permittivity in advanced functional heterogeneous materials: the relevance of the local measurements at submicron scale 33
Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon 32
Comparison Between Single Al2O3 Or HfO2 Single Dielectric Layers And Their Nanolaminated Systems 32
MOCVD growth of rare earth oxides: The case of the praseodymium/oxygen system 32
Conduction mechanisms in epitaxial NiO gate dielectric on AlGaN/GaN heterostructure 32
Structural optical study of high-dielectric-constant oxide films 32
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices 32
Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene 31
Effects of high temperature annealing on MOCVD grown CaCu3Ti4O12 films on LaAlO3 substrates 31
High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors 30
NANOSTRUCTURES FROM AN AMPHIPHILIC CARBOXYCALIX[ 4]ARENE DERIVATIVE 30
Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions through Nanocharacterization and Substrate Nature Effects 30
Electrical properties of MOCVD praseodymium oxide based MOS structures 30
New materials with Ultra high k dielectric constant fOr Tomorrow wireless electronics (NUOTO) 29
Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates 29
Supramolecular Assembly of a Succinyl-Calix[4]arene Derivative in Multilamellar Vesicles 29
Electron transport and dielectric breakdown kinetics in Pr2O3 high k films 28
Scanning Probe Microscopy on heterogeneous CaCu(3)Ti(4)O(12) thin films 28
Recent advances on dielectrics technology for SiC and GaN power devices 27
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 27
Heteroepitaxial growth of nanostructured cerium dioxide thin films by MOCVD on a (001) TiO2 substrate 27
Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen 27
Totale 4.683
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Categoria #
all - tutte 24.015
article - articoli 19.376
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 354
Totale 43.745
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202439 0 0 0 0 0 0 0 0 9 3 24 3
2024/20252.610 12 16 229 113 439 170 55 96 59 62 738 621
2025/20264.320 286 511 431 657 750 131 729 265 239 176 145 0
Totale 6.969