CNR Institutional Research Information System

LONGO, MASSIMO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 352
AS - Asia 193
EU - Europa 29
Totale 574
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 348
SG - Singapore 159
IT - Italia 18
KR - Corea 17
CN - Cina 16
CA - Canada 4
BE - Belgio 3
DE - Germania 3
FI - Finlandia 3
FR - Francia 1
JP - Giappone 1
LT - Lituania 1
Totale 574
Salva come PNG Salva come JPEG
Città #
Santa Clara 327
Singapore 122
Seoul 17
Bologna 10
Guangzhou 9
Rome 5
Brussels 3
Helsinki 3
Ottawa 3
Ashburn 2
Frankfurt am Main 2
Falkenstein 1
Milan 1
Tokyo 1
Toronto 1
Totale 507
Salva come PNG Salva come JPEG
Nome #
High-performance photothermal effect in MOCVD grown topological insulator Sb2Te3 nanograting 18
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 14
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films 13
Fe/Sb(2)Te(3)Interface Reconstruction through Mild Thermal Annealing 12
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance 12
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 11
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films 11
Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD 11
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 11
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 11
MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires 10
Large-Area MOVPE Growth of Topological Insulator Bi2Te3Epitaxial Layers on i-Si(111) 10
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 9
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor 9
Thermal resistance measurement of In3SbTe2 nanowires 9
Evidence of Native Cs Impurities and Metal-Insulator Transition in MoS2 Natural Crystals 9
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys 8
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 8
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 8
Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD 8
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires 8
Advances in nanowire PCM 8
Novel near-infrared emission from crystal defects in MoS 2 multilayer flakes 8
High-Density Sb2Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth 8
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 7
Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs 7
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 7
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process 7
Electronic properties of crystalline Ge1-xSbxTey thin films 7
MOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowires 7
Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN 7
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 7
Photothermal Radiometry applied in nanoliter melted Tellurium alloys 7
A Novel Sb2Te3 Polymorph Stable at the Nanoscale 7
Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells 7
Non-volatile memories: Materials, nanostructures and integration approaches 7
MOCVD growth and structural characterization of In-Sb-Te nanowires 7
Study of the Interface Properties in InGaP/GaAs multi quantum wells by Low-Pressure MOVPE from liquid sources 7
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 7
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 7
Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs 7
thermal properties of In-Sb-Te thin films for phase change memory application 7
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition 7
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD 6
Special Issue "Thin Films and Nanostructures by MOCVD: Fabrication, Characterization and Applications--Volume II" 6
Phase-Change Memories: Materials Science, Technological Applications and Perspectives 6
Nanowire phase change memory (PCM) technologies: properties and performance 6
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 6
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 6
Stranski-Krastanow self-organized growth of nano-scale ZnTe islands on (001)GaAs by metalorganic vapour phase epitaxy 6
Ageing of GeTe nanowires 6
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM 6
Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVD 6
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM 6
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics 6
Au-catalyzed self assembly of GeTe nanowires by MOCVD 6
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires 6
THERMAL PROPERTIES MEASUREMENTS OF PHASE-CHANGE ALLOYS WITHIN THE CONFIGURATION OF NANOSTRUCTURES AND DEVICES 6
Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD 6
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films 6
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 6
Admittance Spectroscopy of GaAs/InGaP MQW Structures 5
Effect of nitrogen doping on the thermal conductivity of GeTe thin films 5
Structural, optical and compositional stability of MoS2 multi-layer fl akes under high dose electron beam irradiation 5
GaAs/InGaP MQW s for high efficiency solar cells 5
Chemical vapor deposition of chalcogenide materials for phase-change memories 5
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 5
Structural and optical analysis of MOVPE-grown InGaP/GaAs superlattices 5
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques 5
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process 4
MOCVD of chalcogenide nanowires for non-volatile phase change memories: from self-assembly to functional analysis 4
Exploiting optical near fields for phase change memories 4
Temperature-dependent thermal characterization of Ge2Sb2Te5 and related interfaces by the photothermal radiometry technique 4
Evolution of thermal conductivity of In3SbTe thin films up to 550 °C 4
Electrical and photoelectrical properties of a GaAs-based p-i-n structure, grown by MOVPE 4
Cellular Immune Response in Lynch Syndrome II on Gastrointestinal Biopsy 4
Ultraviolet optical near-fields of micro spheres imprinted in phase change films 4
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 4
Thermal properties of In-Sb-Te films and interfaces for phase change memory devices 4
Thermal conductivity measurement of a Sb2Te3 phase change nanowire 4
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 4
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 4
Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy 4
Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C 4
Electrical activation of Fe impurities introduced in III semiconductors by high temperature ion implantation 4
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 4
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 4
On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy 4
Totale 601
Salva come PNG Salva come JPEG
Categoria #
all - tutte 2.724
article - articoli 2.058
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 163
Totale 4.945
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202434 0 0 0 0 0 0 0 0 1 0 33 0
2024/2025567 4 7 98 47 296 101 14 0 0 0 0 0
Totale 601