LONGO, MASSIMO
 Distribuzione geografica
Continente #
AS - Asia 1.605
NA - Nord America 1.086
EU - Europa 512
SA - Sud America 296
AF - Africa 34
OC - Oceania 2
Totale 3.535
Nazione #
US - Stati Uniti d'America 1.032
SG - Singapore 730
CN - Cina 323
BR - Brasile 235
VN - Vietnam 182
HK - Hong Kong 173
NL - Olanda 127
FR - Francia 104
IT - Italia 82
KR - Corea 48
DE - Germania 40
FI - Finlandia 37
GB - Regno Unito 33
AR - Argentina 24
IN - India 23
CA - Canada 21
JP - Giappone 20
BD - Bangladesh 17
MX - Messico 16
ID - Indonesia 14
ES - Italia 11
ZA - Sudafrica 11
CO - Colombia 10
IE - Irlanda 9
AT - Austria 8
IL - Israele 8
PK - Pakistan 8
PL - Polonia 8
TR - Turchia 8
UA - Ucraina 8
MA - Marocco 7
SE - Svezia 7
CZ - Repubblica Ceca 6
EC - Ecuador 6
IQ - Iraq 6
UZ - Uzbekistan 6
BE - Belgio 5
PE - Perù 5
PY - Paraguay 5
SA - Arabia Saudita 5
VE - Venezuela 5
BG - Bulgaria 4
IR - Iran 4
JO - Giordania 4
RU - Federazione Russa 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
EG - Egitto 3
JM - Giamaica 3
KG - Kirghizistan 3
PH - Filippine 3
AL - Albania 2
AU - Australia 2
CR - Costa Rica 2
DZ - Algeria 2
GT - Guatemala 2
HN - Honduras 2
KZ - Kazakistan 2
LT - Lituania 2
MM - Myanmar 2
PA - Panama 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BJ - Benin 1
BY - Bielorussia 1
CD - Congo 1
DK - Danimarca 1
ET - Etiopia 1
GA - Gabon 1
GM - Gambi 1
GR - Grecia 1
GY - Guiana 1
HR - Croazia 1
HU - Ungheria 1
KE - Kenya 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
MD - Moldavia 1
ME - Montenegro 1
MY - Malesia 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
RE - Reunion 1
RW - Ruanda 1
SI - Slovenia 1
Totale 3.532
Città #
Singapore 464
Santa Clara 333
Hong Kong 173
Ashburn 99
San Jose 99
Hefei 77
Lauterbourg 75
Beijing 70
Ho Chi Minh City 59
Hanoi 52
Los Angeles 47
Seoul 47
New York 24
Turku 22
Rome 21
Dallas 19
São Paulo 19
Bologna 18
Buffalo 17
Munich 13
Tokyo 13
Haiphong 11
Da Nang 10
Frankfurt am Main 10
Lappeenranta 10
Orem 10
Belo Horizonte 9
Guangzhou 9
Johannesburg 9
Nuremberg 9
Brasília 8
Brooklyn 8
Dublin 8
Warsaw 8
Atlanta 7
Chicago 7
Potenza 7
Stockholm 7
Baltimore 6
London 6
Rio de Janeiro 6
San Francisco 6
Vienna 6
Can Tho 5
Charlotte 5
Denver 5
Helsinki 5
Minamishinagawa 5
Porto Alegre 5
Tashkent 5
The Dalles 5
Toronto 5
Amman 4
Baghdad 4
Bengaluru 4
Brussels 4
Bắc Ninh 4
City of London 4
Dhaka 4
Düsseldorf 4
Olomouc 4
Ottawa 4
Querétaro 4
Seattle 4
Ankara 3
Bauru 3
Betim 3
Bishkek 3
Biên Hòa 3
Boston 3
Campinas 3
Council Bluffs 3
Curitiba 3
Goiânia 3
Guarulhos 3
Hải Dương 3
Istanbul 3
Jackson 3
Kingston 3
Kyiv 3
Medellín 3
Messina 3
Montreal 3
Ninh Bình 3
Phoenix 3
Poplar 3
Salvador 3
San Gregorio di Catania 3
Scottsdale 3
São José dos Campos 3
Thái Bình 3
Albuquerque 2
Almirante Tamandaré 2
Amsterdam 2
Athens 2
Barranquilla 2
Bergenfield 2
Bragança Paulista 2
Bratislava 2
Bristol 2
Totale 2.130
Nome #
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor 131
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films 98
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide 93
Mocvd growth of gete/sb2 te3 core–shell nanowires 76
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 73
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 72
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process 66
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 66
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance 65
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 64
Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD 64
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 64
Fe/Sb(2)Te(3)Interface Reconstruction through Mild Thermal Annealing 62
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation 60
Large-Area MOVPE Growth of Topological Insulator Bi2Te3Epitaxial Layers on i-Si(111) 60
Admittance Spectroscopy of GaAs/InGaP MQW Structures 59
Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD 59
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys 57
High-performance photothermal effect in MOCVD grown topological insulator Sb2Te3 nanograting 55
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 54
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics 53
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process 52
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires 52
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 52
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 47
Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films 47
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 46
MOCVD growth and structural characterization of In-Sb-Te nanowires 45
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 43
Electronic properties of crystalline Ge1-xSbxTey thin films 42
MOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowires 42
Advances in nanowire PCM 42
Thermal resistance measurement of In3SbTe2 nanowires 42
THERMAL PROPERTIES MEASUREMENTS OF PHASE-CHANGE ALLOYS WITHIN THE CONFIGURATION OF NANOSTRUCTURES AND DEVICES 42
Novel near-infrared emission from crystal defects in MoS 2 multilayer flakes 42
High-Density Sb2Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth 41
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD 39
Photothermal Radiometry applied in nanoliter melted Tellurium alloys 39
Special Issue "Thin Films and Nanostructures by MOCVD: Fabrication, Characterization and Applications--Volume II" 36
Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD 36
Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells 36
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition 36
Nanowire phase change memory (PCM) technologies: properties and performance 35
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires 35
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 34
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques 34
A Novel Sb2Te3 Polymorph Stable at the Nanoscale 33
thermal properties of In-Sb-Te thin films for phase change memory application 33
Phase-Change Memories: Materials Science, Technological Applications and Perspectives 32
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 32
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 31
Evidence of Native Cs Impurities and Metal-Insulator Transition in MoS2 Natural Crystals 31
Electrical Investigation of Carbon Intrinsically- Doped GaAs Layers Grown by Metalorganic Vapour Phase Epitaxy from TMGa and TBAs 29
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 29
Study of the Interface Properties in InGaP/GaAs multi quantum wells by Low-Pressure MOVPE from liquid sources 29
Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN 28
GaAs/InGaP MQW s for high efficiency solar cells 28
Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVD 28
Structural and optical analysis of MOVPE-grown InGaP/GaAs superlattices 28
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 28
Non-volatile memories: Materials, nanostructures and integration approaches 27
Thermal conductivity measurement of a Sb2Te3 phase change nanowire 26
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 26
Temperature-dependent thermal characterization of Ge2Sb2Te5 and related interfaces by the photothermal radiometry technique 25
Evolution of thermal conductivity of In3SbTe thin films up to 550 °C 25
Stranski-Krastanow self-organized growth of nano-scale ZnTe islands on (001)GaAs by metalorganic vapour phase epitaxy 25
Structural, optical and compositional stability of MoS2 multi-layer fl akes under high dose electron beam irradiation 25
Ageing of GeTe nanowires 25
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 25
Chemical vapor deposition of chalcogenide materials for phase-change memories 25
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 25
MOCVD of chalcogenide nanowires for non-volatile phase change memories: from self-assembly to functional analysis 24
Exploiting optical near fields for phase change memories 24
Cellular Immune Response in Lynch Syndrome II on Gastrointestinal Biopsy 24
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM 24
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 24
Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs 24
Thermal properties of In-Sb-Te films and interfaces for phase change memory devices 23
Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C 23
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 22
Electrical activation of Fe impurities introduced in III semiconductors by high temperature ion implantation 22
Effect of nitrogen doping on the thermal conductivity of GeTe thin films 21
Ultraviolet optical near-fields of micro spheres imprinted in phase change films 21
Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy 21
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM 20
Au-catalyzed self assembly of GeTe nanowires by MOCVD 19
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films 19
Electrical and photoelectrical properties of a GaAs-based p-i-n structure, grown by MOVPE 15
Structural and electrical analysis of In-Sb-Te-based PCM cells 14
On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy 14
Totale 3.584
Categoria #
all - tutte 13.551
article - articoli 10.455
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 712
Totale 24.718


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202434 0 0 0 0 0 0 0 0 1 0 33 0
2024/20251.467 4 7 98 48 296 101 40 61 51 145 361 255
2025/20261.938 80 159 199 269 428 90 316 93 89 121 58 36
2026/2027145 145 0 0 0 0 0 0 0 0 0 0 0
Totale 3.584