CNR Institutional Research Information System

MIRABELLA, SALVATORE
 Distribuzione geografica
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Continente #
AS - Asia 35
EU - Europa 6
NA - Nord America 1
Totale 42
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Nazione #
CN - Cina 20
KR - Corea 12
IT - Italia 5
SG - Singapore 3
AT - Austria 1
US - Stati Uniti d'America 1
Totale 42
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Città #
Seoul 12
Guangzhou 11
Turin 3
Bologna 2
Singapore 2
Vienna 1
Totale 31
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Nome #
Pain-Free Alpha-Synuclein Detection by Low-Cost Hierarchical Nanowire Based Electrode 7
Effect of O : Er concentration ratio on the structural, electrical, and optical properties of Si : Er : O layers grown by molecular beam epitaxy 2
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 2
B electrical activation in crystalline and preamorphized Ge 2
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 2
B implanted at room temperature in crystalline Si: B defect formation and dissolution 1
B activation enhancement in submicron confined implants in Si 1
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 1
Dissolution kinetic of boron clusters in crystalline Si 1
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopySolid State Microscopy of Semiconducting 1
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 1
Optical Properties of Silicon Nanoparticles for Photovoltaic Applications 1
B activation and clustering in ion-implanted Ge 1
Carrier mobility degradation in highly B-doped junctions 1
Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics 1
Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si 1
Nanostructured sensing devices controlled by ultra-flexible polysilicon readout circuits 1
Carrier distribution in quantum nanostructures by scanning capacitance microscopy 1
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 1
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 1
Fast, high-efficiency Germanium quantum dot photodetectors 1
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 1
Carrier concentration and mobility in B doped Si1-xGex 1
Influence of the electro-optical properties of an alpha-Si:H single layer on the performances of a pin solar cell 1
Flexible pH sensors based on polysilicon thin film transistors and ZnO nanowalls 1
B clustering in amorphous Si 1
He implantation in Si for B diffusion control 1
Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation 1
Fluorine in Si: native-defects complexes and the suppression of impurity diffusion 1
Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors 1
Proceedings of the 15th International Conference on Ion Beam Modification of Materials (IBMM) 1
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 1
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 1
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 1
Flexible sensors based on Low-Temperature polycrystalline silicon thin film transistor 1
Totale 45
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Categoria #
all - tutte 1.738
article - articoli 1.474
book - libri 20
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.232
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202443 0 0 0 0 0 0 0 0 11 0 32 0
2024/20252 2 0 0 0 0 0 0 0 0 0 0 0
Totale 45