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CONSENTINO, GIUSEPPE

CONSENTINO, GIUSEPPE  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 47 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autore(i) File
STUDY AND CHARACTERIZATION OF MODERN 4H-SiC POWER MOSFETs 1-gen-2021 Consentino, Giuseppe
TCAD modeling of bias temperature instabilities in SiC MOSFETs 1-gen-2021 Carangelo, G.; Reggiani, S.; Consentino, G.; Crupi, F.; Meneghesso, G.
Characterization and Modeling of BTI in SiC MOSFETs 1-gen-2019 Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso, C.; Consentino, G.; Crupi, F.
ON THE REVERSIBLE THRESHOLD VOLTAGE SHIFT IN SIC POWER MOSFETs 1-gen-2019 Consentino, Giuseppe; Crupi, Felice; Reggiani, Susanna; Meneghesso, Gaudenzio
Threshold voltage instability in SiC power MOSFETs 1-gen-2019 Consentino, G.; Guevara, E.; Sanchez, L.; Crupi, F.; Reggiani, S.; Meneghesso, G.
Evaluation of miller capacitance depending on drain-source voltage when sj hv power mosfets are in reverse mode 1-gen-2018 P., Carmelo; Consentino, Giuseppe; M., Valeria Cinnera; D., Yosef; G., Antonio; M., Domenico
A New Effective Methodology for Semiconductor Power Devices HTRB Testing 1-gen-2017 Pace, C.; Hernandez-Ambato, J.; Fragomeni, L.; Consentino, G.; D'Ignoti, A.; Galiano, S.; Grimaldi, A.
New LV Wide SOA Power MOSFET technology for Linear Mode operation 1-gen-2016 Scrimizzi, F.; Bazzano, G.; Cavallaro, D.; Comola, M.; Consentino, G.; Fortuna, S.; Longo, G.; Pignataro, G.
Are SiC HV power MOSFETs more robust of standard silicon devices when subjected to terrestrial Neutrons? 1-gen-2015 Consentino, Giuseppe; Laudani, Marc; Macauda, Michele; Pace, Calogero; Giordano, Carlo; Hernandez-Ambato, J.
HV Power MOSFETs working in Linear Zone: performances comparison between standard Planar and SJ devices 1-gen-2015 Consentino, Giuseppe
Effects on power transistors of Terrestrial Cosmic Rays: Study, experimental results and analysis 1-gen-2014 Consentino, G.; Laudani, M.; Privitera, G.; Pace, C.; Giordano, C.; Hernandez, J.; Mazzeo, M.
P-channel power MOSFETs working in Linear Zone: Theoretical and experimental studies and comparison with N-channel devices 1-gen-2014 Consentino, G.
Proton Irradiation on SJ HV Power MOSFETs to Realize Fast Diode Devices 1-gen-2014 Consentino, Giuseppe; Bertuglia, Ignazio; Laudani, Michele
Semiconductor device with improved linear and switching operating modes 1-gen-2014 Consentino, Giuseppe; Grimaldi, Antonio; Micciché, Monica
Study of the dependence between the dissipated power and the inductance when an HV power MOSFET works in UIS passive mode test 1-gen-2014 Consentino, G.; Damante, Y.
A model for avalanche breakdown calculation in low-voltage trench power MOSFET devices 1-gen-2013 Pace, C.; Pierro, S.; Cilia, V.; Consentino, G.
Dangerous effects induced on power MOSFETs by terrestrial neutrons: A theoretical study and an empirical approach based on accelerated experimental analysis 1-gen-2013 Consentino, G.; Laudani, M.; Privitera, G.; Parlato, A.; Marchese, N.; Tomarchio, E.; Pace, C.; Giordano, C.; Mazzeo, M.; Ambato, J. L. H.
Gate oxide defectiveness levels: An experimental comparison between Planar and trench low voltage power MOSFET technologies 1-gen-2013 La Mantia, S.; Consentino, G.
Innovative instrumentation for HTRB tests on semiconductor power devices 1-gen-2013 Consentino, G.; De Pasquale, D.; Galiano, S.; D'Ignoti, A.; Pace, C.; Hernandez Ambato, J. L.; Mazzeo, M.; Giordano, C.
Instrumentation for Innovative Semiconductor Power Devices Reliability Tests 1-gen-2013 Consentino, Giuseppe; Hernandez Ambato, J. L.; De Pasquale, Donatella; Pace, Calogero