CNR Institutional Research Information System

SERAVALLI, LUCA
 Distribuzione geografica
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Continente #
AS - Asia 3.642
NA - Nord America 2.156
EU - Europa 829
SA - Sud America 780
AF - Africa 63
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.481
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Nazione #
US - Stati Uniti d'America 2.051
SG - Singapore 1.476
CN - Cina 813
BR - Brasile 647
HK - Hong Kong 471
VN - Vietnam 405
IT - Italia 256
FR - Francia 199
KR - Corea 131
DE - Germania 77
JP - Giappone 72
IN - India 61
NL - Olanda 58
CA - Canada 45
GB - Regno Unito 45
AR - Argentina 44
FI - Finlandia 43
BD - Bangladesh 40
MX - Messico 37
ID - Indonesia 31
EC - Ecuador 29
IQ - Iraq 24
CO - Colombia 20
ES - Italia 20
AT - Austria 18
ZA - Sudafrica 18
IL - Israele 17
RU - Federazione Russa 16
PL - Polonia 15
UA - Ucraina 14
TR - Turchia 12
VE - Venezuela 12
PK - Pakistan 11
UZ - Uzbekistan 11
MA - Marocco 10
PY - Paraguay 10
SA - Arabia Saudita 10
TW - Taiwan 8
CH - Svizzera 7
NP - Nepal 7
TN - Tunisia 7
AE - Emirati Arabi Uniti 6
AZ - Azerbaigian 6
EG - Egitto 6
IE - Irlanda 6
KE - Kenya 6
NZ - Nuova Zelanda 6
KZ - Kazakistan 5
LT - Lituania 5
OM - Oman 5
PE - Perù 5
RO - Romania 5
SE - Svezia 5
UY - Uruguay 5
AL - Albania 4
BG - Bulgaria 4
CL - Cile 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
PH - Filippine 4
SK - Slovacchia (Repubblica Slovacca) 4
TH - Thailandia 4
TT - Trinidad e Tobago 4
AU - Australia 3
BB - Barbados 3
BE - Belgio 3
CG - Congo 3
GR - Grecia 3
JM - Giamaica 3
LV - Lettonia 3
NO - Norvegia 3
BH - Bahrain 2
BO - Bolivia 2
CR - Costa Rica 2
EE - Estonia 2
HN - Honduras 2
HU - Ungheria 2
IR - Iran 2
LK - Sri Lanka 2
MK - Macedonia 2
MU - Mauritius 2
PA - Panama 2
RS - Serbia 2
SR - Suriname 2
AW - Aruba 1
CI - Costa d'Avorio 1
DK - Danimarca 1
ET - Etiopia 1
GD - Grenada 1
GN - Guinea 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LY - Libia 1
MG - Madagascar 1
MR - Mauritania 1
MT - Malta 1
MY - Malesia 1
NI - Nicaragua 1
Totale 7.474
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Città #
Singapore 928
Santa Clara 736
Hong Kong 461
Hefei 257
Dallas 242
San Jose 218
Lauterbourg 164
Ho Chi Minh City 149
Beijing 145
Ashburn 131
Seoul 125
Los Angeles 95
Hanoi 93
São Paulo 54
Tokyo 52
Parma 39
Buffalo 35
Frankfurt am Main 29
Council Bluffs 24
New York 24
Orem 23
Da Nang 21
Potenza 19
Rio de Janeiro 19
Bologna 17
Turku 17
Milan 16
Minamishinagawa 15
Rome 15
Warsaw 15
Bengaluru 14
Helsinki 14
Belo Horizonte 13
Chennai 13
Haiphong 13
Montreal 12
Brasília 11
Brooklyn 11
Chengdu 11
Lappeenranta 11
London 11
Porto Alegre 11
Salvador 11
Thái Nguyên 11
Redondo Beach 10
Tashkent 10
Amsterdam 9
Atlanta 9
Baghdad 9
Guayaquil 9
Munich 9
Quito 9
Recife 9
Biên Hòa 8
Düsseldorf 8
Elk Grove Village 8
Madrid 8
Mexico City 8
Nuremberg 8
Toronto 8
Bắc Giang 7
Curitiba 7
Denver 7
Genoa 7
Johannesburg 7
Melegnano 7
Phoenix 7
Venice 7
Chicago 6
Dhaka 6
Hangzhou 6
Hortolândia 6
Kyiv 6
Manchester 6
Ribeirão Preto 6
Seattle 6
Sorocaba 6
Vienna 6
Anápolis 5
Auckland 5
Baku 5
Bến Tre 5
Campinas 5
Cape Town 5
Carapicuíba 5
Catania 5
Caxias do Sul 5
Cotia 5
Guangzhou 5
Houston 5
Hải Dương 5
Jakarta 5
Manaus 5
Nairobi 5
New Delhi 5
Nova Iguaçu 5
Paris 5
Pelotas 5
Quận Một 5
Shanghai 5
Totale 4.710
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Nome #
Thickness and temperature dependent photoluminescence from few-layer MoS2 107
Influence of organic promoter gradient on the MoS2growth dynamics 98
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 94
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 91
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 86
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window 85
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 83
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 83
Direct growth of germanium nanowires on glass 82
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 74
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics 73
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires 73
Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition 70
Metamorphic structures for strain engineering 69
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 69
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 69
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 68
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition 68
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 68
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 67
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 67
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 66
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 64
Physics of exciton wave function in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots for telecommunications wavelengths (1.3 - 1.6 ?m) 63
Influence of low-defective buffer on photoelectric properties of InAs/InGaAs and InAs/GaAs quantum dot structures 62
Kinetics peculiarities of photovoltage in vertical metamorphic InAs/InGaAs quantum dot structures 62
Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures 61
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 61
Edge Engineering in MoS2 by Chemically Induced Nano-Folding 61
Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing 60
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 60
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 60
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 59
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 59
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 57
Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence 56
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects 56
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 55
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure 55
UnExploDe: Portable Sensors for Unmanned Explosive Detection 55
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 54
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations 54
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers 52
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 52
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 51
Defects in nanostructures with ripened InAs/GaAs quantum dots 50
Metamorphic InAs/InGaAs Quantum Dot Structures: Photoelectric Properties and Deep Levels 50
Orientation of germanium nanowires on germanium and silicon substrates for nanodevices 48
Synthesis, characterization and chemical functionalization of germanium nanowires 48
Synthesis of germanium nanowires and carbon nanotubes tailored to explosive detection 48
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 47
Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots 46
Confinement of excitons in strain-engineered Metamorphic Quantum Dots 46
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 46
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 46
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 45
Deep Level Influence on Photoconductivity of Metamorphic InAs/InGaAs Quantum Dot Structures 45
Parallel Recording of Single Quantum Dot Optical Emission Using Multicore Fibers 44
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 44
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 44
Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique 44
Molecular beam epitaxy: an overview 43
Study of SnO/-Ga2O3p - N diodes in planar geometry 43
Electrical and structural characterization of InAs/InGaAs quantum dot structures 43
Germanium Nanowires as Sensing Devices: Modelization of Electrical Properties 42
Metamorphic quantum dots: Quite different nanostructures 42
Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures 42
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 42
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures 42
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 41
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 41
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 41
Growth of germanium nanowires with isobuthyl germane 41
Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study 40
Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement 40
Semiconductor nanostructures and Molecular Beam Epitaxy 39
All optical switching of a single photon stream by excitonic depletion 39
Update of "Molecular Beam Epitaxy: An Overview" 39
InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels 39
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 39
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices 38
Modelling of metamorphic quantum dots for single photon generation at long wavelength 38
Cross-Plane Thermal Conductivity in III-V Epitaxial Superlattices: The Role of Composition 38
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window. 38
Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics 38
Thermal activated carrier transfer between InAs quantum dots in very low density samples 38
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 37
MBE growth and study of low-density InAs/GaAs quantum dots and wetting layer 37
PHOTOCONDUCTIVITY OF THE InGaAs/GaAs STRUCTURES WITH QUANTUM DOTS AND WETTING LAYERS 37
Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes 37
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening 37
Fabrication of strain-induced semiconductor nanotubes 37
Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD 37
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 36
Engineering of Quantum Dot Nanostructures for Photonic Devices 36
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 36
Coulomb screening induced by electrons trapped on interface of InAs/InGaAs quantum dots 36
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 36
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 35
Totale 5.313
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Categoria #
all - tutte 24.606
article - articoli 15.979
book - libri 229
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 600
Totale 41.414
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202480 0 0 0 0 0 0 0 0 19 0 56 5
2024/20252.961 28 11 188 106 758 162 82 177 84 116 705 544
2025/20264.695 199 586 474 674 904 204 709 262 295 267 121 0
Totale 7.736