CNR Institutional Research Information System

SERAVALLI, LUCA
 Distribuzione geografica
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Continente #
AS - Asia 2.911
NA - Nord America 1.688
SA - Sud America 760
EU - Europa 517
AF - Africa 58
OC - Oceania 9
Totale 5.943
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Nazione #
US - Stati Uniti d'America 1.605
SG - Singapore 1.228
BR - Brasile 632
CN - Cina 576
HK - Hong Kong 432
VN - Vietnam 299
IT - Italia 208
KR - Corea 130
DE - Germania 57
NL - Olanda 52
IN - India 47
AR - Argentina 41
FI - Finlandia 38
GB - Regno Unito 38
MX - Messico 34
ID - Indonesia 31
CA - Canada 29
EC - Ecuador 29
BD - Bangladesh 26
FR - Francia 24
JP - Giappone 22
CO - Colombia 20
IQ - Iraq 20
IL - Israele 17
ZA - Sudafrica 17
AT - Austria 15
PL - Polonia 14
RU - Federazione Russa 13
TR - Turchia 12
VE - Venezuela 12
PK - Pakistan 9
PY - Paraguay 9
UZ - Uzbekistan 9
ES - Italia 8
MA - Marocco 8
UA - Ucraina 8
TW - Taiwan 7
AZ - Azerbaigian 6
EG - Egitto 6
IE - Irlanda 6
KE - Kenya 6
NZ - Nuova Zelanda 6
SA - Arabia Saudita 6
TN - Tunisia 6
KZ - Kazakistan 5
NP - Nepal 5
PE - Perù 5
UY - Uruguay 5
AE - Emirati Arabi Uniti 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
LT - Lituania 4
OM - Oman 4
TH - Thailandia 4
TT - Trinidad e Tobago 4
AL - Albania 3
BB - Barbados 3
CG - Congo 3
CH - Svizzera 3
CL - Cile 3
NO - Norvegia 3
RO - Romania 3
SE - Svezia 3
SK - Slovacchia (Repubblica Slovacca) 3
AU - Australia 2
BE - Belgio 2
BG - Bulgaria 2
BH - Bahrain 2
BO - Bolivia 2
CZ - Repubblica Ceca 2
EE - Estonia 2
HN - Honduras 2
JM - Giamaica 2
LK - Sri Lanka 2
LV - Lettonia 2
MK - Macedonia 2
PA - Panama 2
PH - Filippine 2
SR - Suriname 2
AW - Aruba 1
CI - Costa d'Avorio 1
ET - Etiopia 1
GD - Grenada 1
GN - Guinea 1
GR - Grecia 1
HU - Ungheria 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LY - Libia 1
MG - Madagascar 1
MR - Mauritania 1
MU - Mauritius 1
MY - Malesia 1
NI - Nicaragua 1
PG - Papua Nuova Guinea 1
SY - Repubblica araba siriana 1
TG - Togo 1
TJ - Tagikistan 1
Totale 5.943
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Città #
Singapore 814
Santa Clara 729
Hong Kong 428
Hefei 257
Dallas 238
Beijing 135
Seoul 125
Ho Chi Minh City 114
Ashburn 90
Hanoi 68
San Jose 57
Los Angeles 53
São Paulo 48
Parma 38
Buffalo 32
Potenza 19
Rio de Janeiro 19
Turku 17
Minamishinagawa 15
New York 15
Bengaluru 14
Bologna 14
Frankfurt am Main 14
Warsaw 14
Belo Horizonte 13
Da Nang 13
Helsinki 13
Milan 13
Haiphong 12
Brasília 11
Porto Alegre 11
Salvador 11
Thái Nguyên 11
Brooklyn 10
Redondo Beach 10
Rome 10
Guayaquil 9
Munich 9
Quito 9
Recife 9
Düsseldorf 8
London 8
Montreal 8
Tashkent 8
Baghdad 7
Biên Hòa 7
Bắc Giang 7
Curitiba 7
Denver 7
Lappeenranta 7
Melegnano 7
Mexico City 7
Orem 7
Venice 7
Hortolândia 6
Johannesburg 6
Nuremberg 6
Phoenix 6
Ribeirão Preto 6
Seattle 6
Sorocaba 6
Anápolis 5
Atlanta 5
Auckland 5
Baku 5
Campinas 5
Cape Town 5
Carapicuíba 5
Caxias do Sul 5
Chennai 5
Cotia 5
Genoa 5
Guangzhou 5
Houston 5
Jakarta 5
Lauterbourg 5
Manaus 5
Manchester 5
Nairobi 5
Nova Iguaçu 5
Pelotas 5
Quận Một 5
Toronto 5
Amsterdam 4
Ankara 4
Bauru 4
Blumenau 4
Boston 4
Cairo 4
Caracas 4
Casalnuovo di Napoli 4
Catania 4
Cavallino 4
Ciudad del Este 4
Dhaka 4
Divinópolis 4
Dublin 4
Elk Grove Village 4
Erbil 4
Feira de Santana 4
Totale 3.863
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Nome #
Influence of organic promoter gradient on the MoS2growth dynamics 92
Thickness and temperature dependent photoluminescence from few-layer MoS2 91
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 83
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window 77
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 77
Direct growth of germanium nanowires on glass 76
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 73
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 71
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 70
Metamorphic structures for strain engineering 67
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires 67
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 64
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics 60
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition 60
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 58
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 58
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 57
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 57
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 56
Physics of exciton wave function in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots for telecommunications wavelengths (1.3 - 1.6 ?m) 56
Influence of low-defective buffer on photoelectric properties of InAs/InGaAs and InAs/GaAs quantum dot structures 56
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 56
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 56
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 56
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 55
Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures 54
Kinetics peculiarities of photovoltage in vertical metamorphic InAs/InGaAs quantum dot structures 54
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 53
Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition 53
Edge Engineering in MoS2 by Chemically Induced Nano-Folding 53
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 52
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 51
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 50
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects 49
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 49
Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence 48
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 48
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure 47
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 45
Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers 45
UnExploDe: Portable Sensors for Unmanned Explosive Detection 44
Metamorphic InAs/InGaAs Quantum Dot Structures: Photoelectric Properties and Deep Levels 43
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 42
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations 42
Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots 41
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 41
Defects in nanostructures with ripened InAs/GaAs quantum dots 40
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 39
Orientation of germanium nanowires on germanium and silicon substrates for nanodevices 38
Study of SnO/-Ga2O3p - N diodes in planar geometry 38
Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique 38
Deep Level Influence on Photoconductivity of Metamorphic InAs/InGaAs Quantum Dot Structures 38
Germanium Nanowires as Sensing Devices: Modelization of Electrical Properties 37
Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures 37
Synthesis, characterization and chemical functionalization of germanium nanowires 37
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 37
Molecular beam epitaxy: an overview 36
Confinement of excitons in strain-engineered Metamorphic Quantum Dots 36
All optical switching of a single photon stream by excitonic depletion 36
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 36
Electrical and structural characterization of InAs/InGaAs quantum dot structures 36
Synthesis of germanium nanowires and carbon nanotubes tailored to explosive detection 36
Parallel Recording of Single Quantum Dot Optical Emission Using Multicore Fibers 35
Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study 35
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 35
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures 35
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 34
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices 34
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 34
Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD 34
Ga2O3polymorphs: tailoring the epitaxial growth conditions 33
Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement 33
Update of "Molecular Beam Epitaxy: An Overview" 33
Coulomb screening induced by electrons trapped on interface of InAs/InGaAs quantum dots 33
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 33
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 32
Modelling of metamorphic quantum dots for single photon generation at long wavelength 32
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 32
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 32
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 32
Growth of germanium nanowires with isobuthyl germane 32
Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics 32
Metamorphic quantum dots: Quite different nanostructures 31
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 31
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 31
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 30
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 30
PHOTOCONDUCTIVITY OF THE InGaAs/GaAs STRUCTURES WITH QUANTUM DOTS AND WETTING LAYERS 30
Engineering of Quantum Dot Nanostructures for Photonic Devices 30
Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review 30
Raman scattering in InAs/AlGaAs quantum dot nanostructures 30
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening 30
InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels 30
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 29
Optical properties of engineered metamorphic QD structures for long wavelength operation 29
Semiconductor nanostructures and Molecular Beam Epitaxy 29
Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes 29
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 29
MBE growth and properties of low-density InAs/GaAs quantum dot structures 29
Thermal activated carrier transfer between InAs quantum dots in very low density samples 29
Totale 4.449
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Categoria #
all - tutte 20.828
article - articoli 13.566
book - libri 192
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 509
Totale 35.095
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202480 0 0 0 0 0 0 0 0 19 0 56 5
2024/20252.961 28 11 188 106 758 162 82 177 84 116 705 544
2025/20263.130 199 586 474 674 904 204 89 0 0 0 0 0
Totale 6.171