TREVISI, GIOVANNA
 Distribuzione geografica
Continente #
AS - Asia 47
EU - Europa 12
NA - Nord America 2
Totale 61
Nazione #
CN - Cina 25
KR - Corea 21
IT - Italia 8
CH - Svizzera 3
US - Stati Uniti d'America 2
GB - Regno Unito 1
SG - Singapore 1
Totale 61
Città #
Seoul 19
Guangzhou 7
Bologna 3
Geneva 3
Parma 3
Forest City 2
Maranello 2
Seocho-gu 2
London 1
Singapore 1
Totale 43
Nome #
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition 8
Martensite-enabled magnetic flexibility: The effects of post-growth treatments in magnetic-shape-memory Heusler thin films 4
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 3
Semiconductor nanostructures and Molecular Beam Epitaxy 3
Indium composition profiles in low density InAs/InGaAs quantum dot nanostructures 3
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 2
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure 2
Molecular beam epitaxy: an overview 2
Engineering of Quantum Dot Nanostructures for Photonic Devices 2
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening 2
Engineering of quantum dot nanostructures for 980 nm emission 2
Update of "Molecular Beam Epitaxy: An Overview" 2
1.3 µm single quantum dot emission from metamorphic InAs/InGaAs nanostructures 2
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 2
Exploring Cu-Doping for Performance Improvement in Sb2Se3 Photovoltaic Solar Cells 2
High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus 1
Dry powder inhalation technology for heart targeting applied to calcium phosphate nanoparticles loaded with active substances 1
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 1
Defects in nanostructures with ripened InAs/GaAs quantum dots 1
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices 1
Quantum dot nanostructures for 980 nm laser devices 1
Rapporto tecnico di avanzamento R B 1.4 - 18° mese (dicembre 2006) Laboratorio MIST E-R 1
Engineering the microstructure of ferromagnetic shape memory thin films by post growth treatments 1
Single-crystal CuIn1 -xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique 1
Epitaxial NiMnGa thin films: microstructure and magnetic engineering by post-growth treatments 1
Titanium Dioxide Nanowires Grown on Titanium Disks Create a Nanostructured Surface with Improved In Vitro Osteogenic Potential 1
Strain Mapping From HRTEM Images Of Quantum Dots Structures And Comparison With FEM Simulations 1
Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes 1
Full Control of In-Plane Stress Tensor in Nanomembranes 1
Confinement of Excitons in Strain-engineered InAs/InGaAs/GaAs Metamorphic Quantum Dots 1
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 1
BIPOLAR PHOTOVOLTAGE OF THE InAs/In(Ga)As/GaAs HETEROSTRUCTURES WITH QUANTUM DOTS 1
Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique 1
Cross-Plane Thermal Conductivity in III-V Epitaxial Superlattices: The Role of Composition 1
Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window 1
Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages 1
Growth and structural characterization of Sb2Se3 solar cells with vertical Sb4Se6 ribbon alignment by RF magnetron sputtering 1
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 1
Coulomb screening induced by electrons trapped on interface of InAs/InGaAs quantum dots 1
2D-3D growth transition in metamorphic InAs/InGaAs quantum dots 1
Carrier dynamics of single InAs Quantum Dots studied by two colour intensity interferometry correlation 1
UnExploDe: Portable Sensors for Unmanned Explosive Detection 1
Totale 68
Categoria #
all - tutte 1.401
article - articoli 731
book - libri 22
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 50
Totale 2.204


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202456 0 0 0 0 0 0 0 0 6 0 44 6
2024/202512 12 0 0 0 0 0 0 0 0 0 0 0
Totale 68