CNR Institutional Research Information System

LULLI, GIORGIO
 Distribuzione geografica
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Continente #
AS - Asia 1.388
NA - Nord America 833
EU - Europa 323
SA - Sud America 245
AF - Africa 24
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 2.815
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Nazione #
US - Stati Uniti d'America 796
SG - Singapore 589
CN - Cina 335
BR - Brasile 194
VN - Vietnam 135
HK - Hong Kong 125
FR - Francia 80
IT - Italia 80
KR - Corea 57
NL - Olanda 52
JP - Giappone 33
DE - Germania 27
IN - India 24
BD - Bangladesh 23
FI - Finlandia 20
AR - Argentina 17
GB - Regno Unito 17
EC - Ecuador 12
CA - Canada 11
IL - Israele 11
MX - Messico 10
PL - Polonia 9
IQ - Iraq 8
TR - Turchia 8
CO - Colombia 7
PY - Paraguay 7
UA - Ucraina 6
ZA - Sudafrica 6
DZ - Algeria 5
ES - Italia 5
PK - Pakistan 5
UZ - Uzbekistan 5
AT - Austria 4
ID - Indonesia 4
JM - Giamaica 4
MA - Marocco 4
SE - Svezia 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
DO - Repubblica Dominicana 3
KE - Kenya 3
NP - Nepal 3
RU - Federazione Russa 3
SA - Arabia Saudita 3
TT - Trinidad e Tobago 3
CR - Costa Rica 2
CZ - Repubblica Ceca 2
EG - Egitto 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
MY - Malesia 2
PE - Perù 2
PH - Filippine 2
RS - Serbia 2
TJ - Tagikistan 2
AG - Antigua e Barbuda 1
AL - Albania 1
AO - Angola 1
AU - Australia 1
BH - Bahrain 1
BY - Bielorussia 1
CH - Svizzera 1
CL - Cile 1
CV - Capo Verde 1
EE - Estonia 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
IE - Irlanda 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
PA - Panama 1
PS - Palestinian Territory 1
PT - Portogallo 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SV - El Salvador 1
TN - Tunisia 1
UY - Uruguay 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 2.815
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Città #
Santa Clara 357
Singapore 350
Hong Kong 121
Hefei 118
San Jose 88
Ashburn 65
Beijing 63
Lauterbourg 60
Seoul 56
Ho Chi Minh City 45
Hanoi 39
Los Angeles 26
Tokyo 23
Frankfurt am Main 13
New York 13
São Paulo 13
Turku 12
Guangzhou 11
Dallas 10
Minamishinagawa 9
Orem 9
Buffalo 8
Helsinki 8
Bologna 7
Brooklyn 7
Milan 7
Rio de Janeiro 7
Belo Horizonte 6
Bengaluru 6
Da Nang 6
Newark 6
Warsaw 6
Asunción 5
Atlanta 5
Campinas 5
Caxias do Sul 5
Denver 5
Johannesburg 5
Munich 5
Tashkent 5
Biên Hòa 4
Bắc Ninh 4
Carlazzo 4
Chicago 4
Florence 4
Guayaquil 4
Houston 4
Istanbul 4
Mumbai 4
Naples 4
Nuremberg 4
Paris 4
Quito 4
Rome 4
Stockholm 4
Trieste 4
Amsterdam 3
Bogotá 3
Casablanca 3
Elk Grove Village 3
Fortaleza 3
Haiphong 3
Kingston 3
La Paz 3
London 3
Nairobi 3
Niterói 3
Oakland 3
Piscataway 3
Port of Spain 3
Porto Alegre 3
Santa Maria 3
Toronto 3
Aci Sant'Antonio 2
Alegrete 2
Algiers 2
Alvorada 2
Amman 2
Araruama 2
Arlington Heights 2
Baghdad 2
Bauru 2
Bishkek 2
Blumenau 2
Boardman 2
Boston 2
Botuverá 2
Brasília 2
Cabo Frio 2
Cadiz 2
Campos dos Goytacazes 2
Can Tho 2
Chennai 2
Costa Mesa 2
Cotia 2
Dushanbe 2
Erice 2
Figino 2
Formosa 2
Goiânia 2
Totale 1.784
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Nome #
There's light in the shadow! The Poisson-Arago experiment. 115
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 84
KING 77
International Atomic Energy Agency Intercomparison of ion beam analysis software 72
Contributo al femminile all'educazione tecnica e scientifica per le materie STEM. Fare rete tra scienziate/i, enti, università, associazioni, media e portatori d'interesse 70
Comitato Scientifico Mostra: NANOMONDO Viaggio nel mondo fino alla -9, Museo di Storia Naturale di Ferrara 68
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 66
Summary of IAEA intercomparison of IBA software 62
Report su attività Istituti CNR dell'Area della Ricerca di Bologna per la Notte Europea dei Ricercatori 2020 - Progetto SOCIETYnext 56
Channeling characterization of defects in silicon: an atomistic approach 54
Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions 54
Damage and recovery in doped SOI layers after high energy implantation 52
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures 51
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 51
RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM. 51
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 49
Guidelines for Teaching and Learning Science in creative ways 49
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 46
Static disorder in Si1-xGex alloys and in silicon on insulator structures 45
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 45
Charge states distribution of 3350 kev He ions channeled in silicon 45
Computer simulation of ion channeling in Si containing structurally relaxed point defects 44
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 43
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 43
Codice MC-BCA per simulazione 2D impianto ionico in SiC 42
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications 42
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 41
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 41
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 41
Interferenza di elettroni 41
Atomistic simulation of ion channeling in heavily doped Si : As 41
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 39
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 38
L'esperimento più bello. L'interferenza di elettroni singoli e il mistero della meccanica quantistica 38
Low energy silicon on insulator ion implanted gratings for optical wafer scale testing 38
ACCADUEO 37
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 37
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 37
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 37
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 36
Ion implantation of silicon at the nanometer scale 35
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 34
Ion implantation induced swelling in 6H-SiC 34
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 33
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 32
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As 29
Radiation damage evolution and its relation with dopant distribution during self-annealing implantation of As in silicon 28
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 28
Damage profiles in as-implanted silicon: Fluence dependence 27
Damage profiles in high-energy As implanted Si 27
Tridimensional characterization of voids in self-annealed implanted silicon using electron holography 27
Germanium implanted Bragg gratings in silicon on insulator waveguides 27
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions 26
Electron holography study of voids in self-annealed implanted silicon 25
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 24
Damage and recovery in doped SOI layers after high energy implantation 24
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 23
Off-axis electron holography of nearly faceted voids in del-annealed implanted silicon 23
ANOMALOUS DISTRIBUTION OF AS DURING IMPLANTATION IN SILICON UNDER SELF-ANNEALING CONDITIONS 23
Stopping power of SiO2 for 0.2-3.0 MeV He ions 23
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 22
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 22
XXI International Conference on Atomic Collisions in Solids 20
Damage and recovery in doped SOI layers after high energy implantation 20
MeV ion implantation induced damage in relaxed Si(1-x)Ge(x) 20
Structural characterization and modeling of damage accumulation in In implanted Si 20
MeV Ion Implantation Induced Damage in Relaxed Si1-xGex 19
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 19
Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon 19
Stopping power of sio2 for 0.2?3.0 mev He ions 17
Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distribution 17
A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation 17
Low-energy recoils in crystalline silicon: quantum simulations 16
Totale 2.818
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Categoria #
all - tutte 9.685
article - articoli 6.779
book - libri 385
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.849
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202427 0 0 0 0 0 0 0 0 0 0 22 5
2024/20251.162 5 2 102 42 305 43 9 72 47 68 254 213
2025/20261.552 74 153 120 211 378 59 222 83 91 103 33 25
2026/202777 77 0 0 0 0 0 0 0 0 0 0 0
Totale 2.818