CNR Institutional Research Information System

LULLI, GIORGIO
 Distribuzione geografica
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Continente #
AS - Asia 1.375
NA - Nord America 758
EU - Europa 302
SA - Sud America 242
AF - Africa 24
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 2.703
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Nazione #
US - Stati Uniti d'America 731
SG - Singapore 589
CN - Cina 335
BR - Brasile 193
VN - Vietnam 134
HK - Hong Kong 125
FR - Francia 80
IT - Italia 60
KR - Corea 57
NL - Olanda 52
JP - Giappone 33
DE - Germania 27
IN - India 24
FI - Finlandia 20
AR - Argentina 17
GB - Regno Unito 17
BD - Bangladesh 12
EC - Ecuador 12
IL - Israele 11
CA - Canada 10
MX - Messico 9
PL - Polonia 9
IQ - Iraq 8
TR - Turchia 8
PY - Paraguay 7
CO - Colombia 6
UA - Ucraina 6
ZA - Sudafrica 6
DZ - Algeria 5
ES - Italia 5
PK - Pakistan 5
UZ - Uzbekistan 5
AT - Austria 4
ID - Indonesia 4
MA - Marocco 4
SE - Svezia 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
DO - Repubblica Dominicana 3
KE - Kenya 3
NP - Nepal 3
RU - Federazione Russa 3
SA - Arabia Saudita 3
CZ - Repubblica Ceca 2
EG - Egitto 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
PH - Filippine 2
TJ - Tagikistan 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BH - Bahrain 1
BY - Bielorussia 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
CV - Capo Verde 1
EE - Estonia 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
IE - Irlanda 1
JM - Giamaica 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
PA - Panama 1
PE - Perù 1
PS - Palestinian Territory 1
PT - Portogallo 1
RO - Romania 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 2.703
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Città #
Santa Clara 356
Singapore 350
Hong Kong 121
Hefei 118
San Jose 87
Beijing 63
Lauterbourg 60
Seoul 56
Ashburn 46
Ho Chi Minh City 45
Hanoi 38
Los Angeles 26
Tokyo 23
Frankfurt am Main 13
New York 13
São Paulo 13
Turku 12
Guangzhou 11
Dallas 10
Minamishinagawa 9
Orem 9
Helsinki 8
Buffalo 7
Rio de Janeiro 7
Belo Horizonte 6
Bengaluru 6
Brooklyn 6
Da Nang 6
Warsaw 6
Asunción 5
Atlanta 5
Bologna 5
Campinas 5
Caxias do Sul 5
Denver 5
Johannesburg 5
Munich 5
Tashkent 5
Biên Hòa 4
Bắc Ninh 4
Carlazzo 4
Florence 4
Guayaquil 4
Istanbul 4
Mumbai 4
Newark 4
Nuremberg 4
Paris 4
Quito 4
Rome 4
Stockholm 4
Amsterdam 3
Bogotá 3
Casablanca 3
Elk Grove Village 3
Fortaleza 3
Haiphong 3
Houston 3
La Paz 3
London 3
Nairobi 3
Naples 3
Niterói 3
Porto Alegre 3
Santa Maria 3
Toronto 3
Trieste 3
Aci Sant'Antonio 2
Alegrete 2
Algiers 2
Alvorada 2
Amman 2
Araruama 2
Baghdad 2
Bauru 2
Bishkek 2
Blumenau 2
Boston 2
Botuverá 2
Brasília 2
Cabo Frio 2
Cadiz 2
Campos dos Goytacazes 2
Can Tho 2
Chennai 2
Dushanbe 2
Erice 2
Formosa 2
Goiânia 2
Honolulu 2
Islamabad 2
Jaboatão dos Guararapes 2
Jaraguá do Sul 2
Jequié 2
Kathmandu 2
Kyiv 2
La Spezia 2
Manchester 2
Mexico City 2
Modena 2
Totale 1.742
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Nome #
There's light in the shadow! The Poisson-Arago experiment. 113
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 81
KING 67
Contributo al femminile all'educazione tecnica e scientifica per le materie STEM. Fare rete tra scienziate/i, enti, università, associazioni, media e portatori d'interesse 65
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 64
Comitato Scientifico Mostra: NANOMONDO Viaggio nel mondo fino alla -9, Museo di Storia Naturale di Ferrara 62
Summary of IAEA intercomparison of IBA software 61
International Atomic Energy Agency Intercomparison of ion beam analysis software 58
Report su attività Istituti CNR dell'Area della Ricerca di Bologna per la Notte Europea dei Ricercatori 2020 - Progetto SOCIETYnext 55
Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions 53
Damage and recovery in doped SOI layers after high energy implantation 52
Channeling characterization of defects in silicon: an atomistic approach 52
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures 50
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 49
RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM. 49
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 47
Guidelines for Teaching and Learning Science in creative ways 46
Static disorder in Si1-xGex alloys and in silicon on insulator structures 45
Charge states distribution of 3350 kev He ions channeled in silicon 45
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 44
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 43
Computer simulation of ion channeling in Si containing structurally relaxed point defects 43
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications 42
Codice MC-BCA per simulazione 2D impianto ionico in SiC 41
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 41
Atomistic simulation of ion channeling in heavily doped Si : As 41
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 40
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 39
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 39
Interferenza di elettroni 39
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 38
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 38
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 37
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 37
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 37
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 37
ACCADUEO 36
L'esperimento più bello. L'interferenza di elettroni singoli e il mistero della meccanica quantistica 36
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 35
Ion implantation of silicon at the nanometer scale 34
Low energy silicon on insulator ion implanted gratings for optical wafer scale testing 34
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 33
Ion implantation induced swelling in 6H-SiC 33
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 32
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 31
Radiation damage evolution and its relation with dopant distribution during self-annealing implantation of As in silicon 28
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 28
Damage profiles in high-energy As implanted Si 27
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As 27
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions 25
Electron holography study of voids in self-annealed implanted silicon 25
Tridimensional characterization of voids in self-annealed implanted silicon using electron holography 25
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 24
Damage and recovery in doped SOI layers after high energy implantation 24
Damage profiles in as-implanted silicon: Fluence dependence 23
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 23
Off-axis electron holography of nearly faceted voids in del-annealed implanted silicon 23
Stopping power of SiO2 for 0.2-3.0 MeV He ions 23
Germanium implanted Bragg gratings in silicon on insulator waveguides 23
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 22
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 22
ANOMALOUS DISTRIBUTION OF AS DURING IMPLANTATION IN SILICON UNDER SELF-ANNEALING CONDITIONS 21
Damage and recovery in doped SOI layers after high energy implantation 20
MeV ion implantation induced damage in relaxed Si(1-x)Ge(x) 19
MeV Ion Implantation Induced Damage in Relaxed Si1-xGex 19
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 19
Structural characterization and modeling of damage accumulation in In implanted Si 19
Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon 19
XXI International Conference on Atomic Collisions in Solids 18
Stopping power of sio2 for 0.2?3.0 mev He ions 17
Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distribution 17
A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation 17
Low-energy recoils in crystalline silicon: quantum simulations 15
Totale 2.706
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Categoria #
all - tutte 8.548
article - articoli 5.985
book - libri 333
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.866
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202427 0 0 0 0 0 0 0 0 0 0 22 5
2024/20251.162 5 2 102 42 305 43 9 72 47 68 254 213
2025/20261.517 74 153 120 211 378 59 222 83 91 103 23 0
Totale 2.706