CNR Institutional Research Information System

LULLI, GIORGIO
 Distribuzione geografica
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Continente #
AS - Asia 93
NA - Nord America 33
EU - Europa 5
Totale 131
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Nazione #
SG - Singapore 70
US - Stati Uniti d'America 33
CN - Cina 20
IT - Italia 5
KR - Corea 3
Totale 131
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Città #
Singapore 61
Santa Clara 14
Guangzhou 10
Seoul 3
Naples 2
Savigliano 2
Boardman 1
Totale 93
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Nome #
Comitato Scientifico Mostra: NANOMONDO Viaggio nel mondo fino alla -9, Museo di Storia Naturale di Ferrara 5
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 4
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 4
Damage profiles in high-energy As implanted Si 4
ACCADUEO 4
L'esperimento più bello. L'interferenza di elettroni singoli e il mistero della meccanica quantistica 4
RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM. 4
Computer simulation of ion channeling in Si containing structurally relaxed point defects 3
Codice MC-BCA per simulazione 2D impianto ionico in SiC 3
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 3
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 3
Damage and recovery in doped SOI layers after high energy implantation 3
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 3
Guidelines for Teaching and Learning Science in creative ways 3
Electron holography study of voids in self-annealed implanted silicon 3
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 3
Report su attività Istituti CNR dell'Area della Ricerca di Bologna per la Notte Europea dei Ricercatori 2020 - Progetto SOCIETYnext 3
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 3
Contributo al femminile all'educazione tecnica e scientifica per le materie STEM. Fare rete tra scienziate/i, enti, università, associazioni, media e portatori d'interesse 3
Charge states distribution of 3350 kev He ions channeled in silicon 3
Atomistic simulation of ion channeling in heavily doped Si : As 3
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 3
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 2
International Atomic Energy Agency Intercomparison of ion beam analysis software 2
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 2
Channeling characterization of defects in silicon: an atomistic approach 2
Radiation damage evolution and its relation with dopant distribution during self-annealing implantation of As in silicon 2
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 2
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 2
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 2
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 2
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 2
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 2
KING 2
Ion implantation of silicon at the nanometer scale 2
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 2
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 2
Germanium implanted Bragg gratings in silicon on insulator waveguides 2
Summary of IAEA intercomparison of IBA software 1
Damage and recovery in doped SOI layers after high energy implantation 1
XXI International Conference on Atomic Collisions in Solids 1
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 1
Damage profiles in as-implanted silicon: Fluence dependence 1
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 1
Low-energy recoils in crystalline silicon: quantum simulations 1
Damage and recovery in doped SOI layers after high energy implantation 1
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As 1
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 1
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications 1
MeV Ion Implantation Induced Damage in Relaxed Si1-xGex 1
Stopping power of sio2 for 0.2?3.0 mev He ions 1
Low energy silicon on insulator ion implanted gratings for optical wafer scale testing 1
Off-axis electron holography of nearly faceted voids in del-annealed implanted silicon 1
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 1
Interferenza di elettroni 1
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 1
Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon 1
ANOMALOUS DISTRIBUTION OF AS DURING IMPLANTATION IN SILICON UNDER SELF-ANNEALING CONDITIONS 1
Stopping power of SiO2 for 0.2-3.0 MeV He ions 1
Ion implantation induced swelling in 6H-SiC 1
Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions 1
A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation 1
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 1
Totale 131
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Categoria #
all - tutte 1.126
article - articoli 814
book - libri 48
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.988
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202427 0 0 0 0 0 0 0 0 0 0 22 5
2024/2025104 5 2 97 0 0 0 0 0 0 0 0 0
Totale 131