CNR Institutional Research Information System

LULLI, GIORGIO
 Distribuzione geografica
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Continente #
AS - Asia 1.409
NA - Nord America 991
EU - Europa 331
SA - Sud America 264
AF - Africa 25
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 1
Totale 3.025
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Nazione #
US - Stati Uniti d'America 944
SG - Singapore 589
CN - Cina 335
BR - Brasile 199
VN - Vietnam 139
HK - Hong Kong 126
IT - Italia 82
FR - Francia 80
KR - Corea 57
NL - Olanda 52
JP - Giappone 33
BD - Bangladesh 27
DE - Germania 27
IN - India 24
GB - Regno Unito 21
FI - Finlandia 20
AR - Argentina 18
CA - Canada 15
CO - Colombia 14
EC - Ecuador 13
MX - Messico 12
IL - Israele 11
IQ - Iraq 9
PL - Polonia 9
TR - Turchia 9
PY - Paraguay 7
DZ - Algeria 6
JM - Giamaica 6
UA - Ucraina 6
VE - Venezuela 6
ZA - Sudafrica 6
ES - Italia 5
ID - Indonesia 5
NP - Nepal 5
PK - Pakistan 5
UZ - Uzbekistan 5
AT - Austria 4
MA - Marocco 4
MY - Malesia 4
SA - Arabia Saudita 4
SE - Svezia 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
DO - Repubblica Dominicana 3
KE - Kenya 3
RU - Federazione Russa 3
TT - Trinidad e Tobago 3
CR - Costa Rica 2
CZ - Repubblica Ceca 2
EG - Egitto 2
HN - Honduras 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
PE - Perù 2
PH - Filippine 2
RS - Serbia 2
TH - Thailandia 2
TJ - Tagikistan 2
AG - Antigua e Barbuda 1
AL - Albania 1
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BE - Belgio 1
BH - Bahrain 1
BY - Bielorussia 1
CH - Svizzera 1
CL - Cile 1
CV - Capo Verde 1
EE - Estonia 1
GE - Georgia 1
GP - Guadalupe 1
GR - Grecia 1
HR - Croazia 1
IE - Irlanda 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LT - Lituania 1
LV - Lettonia 1
MD - Moldavia 1
PA - Panama 1
PS - Palestinian Territory 1
PT - Portogallo 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SV - El Salvador 1
TN - Tunisia 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.022
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Città #
Santa Clara 358
Singapore 350
Hong Kong 122
Hefei 118
San Jose 98
Ashburn 77
Beijing 63
Lauterbourg 60
Seoul 56
Ho Chi Minh City 46
Hanoi 40
Los Angeles 29
Tokyo 23
New York 15
Frankfurt am Main 13
São Paulo 13
Turku 12
Guangzhou 11
Dallas 10
Buffalo 9
Milan 9
Minamishinagawa 9
Orem 9
Brooklyn 8
Helsinki 8
Newark 8
Bologna 7
Rio de Janeiro 7
Atlanta 6
Belo Horizonte 6
Bengaluru 6
Chicago 6
Council Bluffs 6
Da Nang 6
Warsaw 6
Asunción 5
Bogotá 5
Campinas 5
Caxias do Sul 5
Denver 5
Johannesburg 5
Kingston 5
Munich 5
Tashkent 5
Biên Hòa 4
Bắc Ninh 4
Carlazzo 4
Florence 4
Guayaquil 4
Houston 4
Istanbul 4
Medellín 4
Mumbai 4
Naples 4
Nuremberg 4
Paris 4
Quito 4
Rome 4
Stockholm 4
Trieste 4
Amsterdam 3
Burlington 3
Casablanca 3
Detroit 3
Elk Grove Village 3
Fortaleza 3
Haiphong 3
Jacksonville 3
Kathmandu 3
La Paz 3
London 3
Nairobi 3
Naperville 3
Niterói 3
Oakland 3
Petaling Jaya 3
Philadelphia 3
Piscataway 3
Port of Spain 3
Porto Alegre 3
Punto Fijo 3
Santa Maria 3
Toronto 3
Aci Sant'Antonio 2
Alegrete 2
Algiers 2
Alvorada 2
Amman 2
Araruama 2
Arlington Heights 2
Baghdad 2
Bauru 2
Bishkek 2
Blumenau 2
Boardman 2
Boston 2
Botuverá 2
Brasília 2
Cabo Frio 2
Cadiz 2
Totale 1.842
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Nome #
There's light in the shadow! The Poisson-Arago experiment. 121
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 90
KING 87
International Atomic Energy Agency Intercomparison of ion beam analysis software 75
Contributo al femminile all'educazione tecnica e scientifica per le materie STEM. Fare rete tra scienziate/i, enti, università, associazioni, media e portatori d'interesse 73
Comitato Scientifico Mostra: NANOMONDO Viaggio nel mondo fino alla -9, Museo di Storia Naturale di Ferrara 72
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 71
Summary of IAEA intercomparison of IBA software 65
Report su attività Istituti CNR dell'Area della Ricerca di Bologna per la Notte Europea dei Ricercatori 2020 - Progetto SOCIETYnext 59
Channeling characterization of defects in silicon: an atomistic approach 57
Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions 57
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 55
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures 54
Damage and recovery in doped SOI layers after high energy implantation 54
Guidelines for Teaching and Learning Science in creative ways 54
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 52
RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM. 52
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 48
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 47
Charge states distribution of 3350 kev He ions channeled in silicon 47
Static disorder in Si1-xGex alloys and in silicon on insulator structures 46
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 46
Computer simulation of ion channeling in Si containing structurally relaxed point defects 45
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 45
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 45
Very low energy implanted Bragg gratings in SOI for wafer scale testing applications 44
Codice MC-BCA per simulazione 2D impianto ionico in SiC 43
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 43
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 43
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 43
L'esperimento più bello. L'interferenza di elettroni singoli e il mistero della meccanica quantistica 42
Interferenza di elettroni 42
Atomistic simulation of ion channeling in heavily doped Si : As 42
Low energy silicon on insulator ion implanted gratings for optical wafer scale testing 41
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 40
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 40
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 40
ACCADUEO 39
Ion implantation of silicon at the nanometer scale 38
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 38
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 37
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 37
Ion implantation induced swelling in 6H-SiC 37
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 35
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 35
Damage profiles in high-energy As implanted Si 33
Tridimensional characterization of voids in self-annealed implanted silicon using electron holography 32
Radiation damage evolution and its relation with dopant distribution during self-annealing implantation of As in silicon 30
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As 30
Germanium implanted Bragg gratings in silicon on insulator waveguides 30
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON 30
Damage profiles in as-implanted silicon: Fluence dependence 29
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions 29
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 28
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 26
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations 26
Electron holography study of voids in self-annealed implanted silicon 26
Off-axis electron holography of nearly faceted voids in del-annealed implanted silicon 26
Structural characterization and modeling of damage accumulation in In implanted Si 26
ANOMALOUS DISTRIBUTION OF AS DURING IMPLANTATION IN SILICON UNDER SELF-ANNEALING CONDITIONS 26
Damage and recovery in doped SOI layers after high energy implantation 25
RBS channeling analysis of ion irradiation effects in heavily doped Si:As 25
Stopping power of SiO2 for 0.2-3.0 MeV He ions 25
MeV ion implantation induced damage in relaxed Si(1-x)Ge(x) 23
XXI International Conference on Atomic Collisions in Solids 22
Damage and recovery in doped SOI layers after high energy implantation 22
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon 22
MeV Ion Implantation Induced Damage in Relaxed Si1-xGex 21
Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distribution 21
Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon 21
Low-energy recoils in crystalline silicon: quantum simulations 19
Stopping power of sio2 for 0.2?3.0 mev He ions 18
A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation 18
Totale 3.025
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Categoria #
all - tutte 10.607
article - articoli 7.424
book - libri 417
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.448
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202427 0 0 0 0 0 0 0 0 0 0 22 5
2024/20251.162 5 2 102 42 305 43 9 72 47 68 254 213
2025/20261.552 74 153 120 211 378 59 222 83 91 103 33 25
2026/2027284 99 78 107 0 0 0 0 0 0 0 0 0
Totale 3.025