CNR Institutional Research Information System

FANCIULLI, MARCO
 Distribuzione geografica
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Continente #
AS - Asia 3.199
NA - Nord America 1.838
SA - Sud America 626
EU - Europa 575
AF - Africa 47
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.290
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Nazione #
US - Stati Uniti d'America 1.763
SG - Singapore 1.469
CN - Cina 691
BR - Brasile 507
HK - Hong Kong 331
VN - Vietnam 321
FR - Francia 188
KR - Corea 136
IT - Italia 120
NL - Olanda 64
IN - India 58
AR - Argentina 51
DE - Germania 43
BD - Bangladesh 41
GB - Regno Unito 36
JP - Giappone 29
CA - Canada 27
EC - Ecuador 25
FI - Finlandia 23
ID - Indonesia 19
IL - Israele 19
MX - Messico 19
ZA - Sudafrica 19
IQ - Iraq 12
PL - Polonia 12
VE - Venezuela 11
CO - Colombia 10
SE - Svezia 10
TR - Turchia 10
UA - Ucraina 10
AT - Austria 9
CL - Cile 9
ES - Italia 8
EG - Egitto 7
GR - Grecia 7
RU - Federazione Russa 7
SA - Arabia Saudita 7
IE - Irlanda 6
MA - Marocco 6
PH - Filippine 6
PK - Pakistan 6
JM - Giamaica 5
TW - Taiwan 5
UY - Uruguay 5
UZ - Uzbekistan 5
AL - Albania 4
AU - Australia 4
CR - Costa Rica 4
MM - Myanmar 4
NP - Nepal 4
TT - Trinidad e Tobago 4
AZ - Azerbaigian 3
BB - Barbados 3
BE - Belgio 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
HN - Honduras 3
KE - Kenya 3
LT - Lituania 3
MY - Malesia 3
PE - Perù 3
PY - Paraguay 3
TN - Tunisia 3
AE - Emirati Arabi Uniti 2
BG - Bulgaria 2
DZ - Algeria 2
HU - Ungheria 2
JO - Giordania 2
LB - Libano 2
LK - Sri Lanka 2
NI - Nicaragua 2
OM - Oman 2
PA - Panama 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
TH - Thailandia 2
UG - Uganda 2
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
BJ - Benin 1
BO - Bolivia 1
BZ - Belize 1
CD - Congo 1
CG - Congo 1
CI - Costa d'Avorio 1
DK - Danimarca 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GI - Gibilterra 1
GY - Guiana 1
IR - Iran 1
KH - Cambogia 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MQ - Martinica 1
NO - Norvegia 1
Totale 6.284
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Città #
Singapore 885
Santa Clara 684
Hong Kong 326
Hefei 238
San Jose 212
Beijing 169
Lauterbourg 157
Ashburn 154
Ho Chi Minh City 126
Seoul 126
Hanoi 76
Los Angeles 50
Buffalo 36
São Paulo 32
Guangzhou 28
New York 20
Frankfurt am Main 19
Rio de Janeiro 17
Rome 17
Dallas 16
Belo Horizonte 15
Minamishinagawa 15
Milan 14
Haiphong 13
Quito 12
Tokyo 12
Bengaluru 11
Bologna 11
Chennai 11
Goiânia 11
Orem 11
Denver 10
Helsinki 10
The Dalles 10
Brasília 9
Da Nang 9
Houston 9
London 9
Warsaw 9
Biên Hòa 8
Brooklyn 8
Dhaka 8
Guayaquil 8
Montreal 8
Atlanta 7
Campinas 7
Düsseldorf 7
Johannesburg 7
Lappeenranta 7
Lecce 7
New Delhi 7
Newark 7
Stockholm 7
Vienna 7
Can Tho 6
Charlotte 6
Memphis 6
Philadelphia 6
Phoenix 6
Porto Alegre 6
Ribeirão Preto 6
Salvador 6
Turku 6
Anápolis 5
Baghdad 5
Baltimore 5
Dublin 5
Fortaleza 5
Munich 5
Nuremberg 5
Piracicaba 5
Recife 5
San Francisco 5
Santo André 5
Shanghai 5
Tashkent 5
Thái Bình 5
Thái Nguyên 5
Viterbo 5
Athens 4
Bari 4
Boston 4
Buenos Aires 4
Colombo 4
Elk Grove Village 4
Greenwood 4
Guastalla 4
Hyderabad 4
Hải Dương 4
Imperatriz 4
Kyiv 4
Mauá 4
Montevideo 4
New Orleans 4
Portsmouth 4
Santiago 4
Sorocaba 4
Uberlândia 4
Volta Redonda 4
Amsterdam 3
Totale 3.926
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Nome #
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor 131
Influence of Metal Interlayers on Spin-Charge Conversion in Sb2Te3 Topological Insulator-Based Devices 118
The 2022 magneto-optics roadmap 92
Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin 80
Ultraviolet optical near-fields of microspheres imprinted in phase change films 69
Vibrational and electrical properties of hexagonal La2O3 films 67
Analog memristive synapse in spiking networks implementing unsupervised learning 67
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 64
Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells 64
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 64
Donor incomplete ionization and mobility enhancement in ultra-thin silicon-on-insulator films doped by phosphorus end-terminated polymers 64
Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors 58
Ab initio study of magnetic interaction of Fe doped ZnO with intrinsic vacancies 55
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 54
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 53
Spin Pumping in Epitaxial Ge1‐xSnx Alloys 53
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion 53
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process 52
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 52
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 51
Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) 51
Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling 51
Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping 51
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching 51
Switching quantum transport in a three donors silicon fin-field effect transistor 50
Adiabatic charge control in a single donor atom transistor 50
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 48
Synaptic potentiation and depression in Al:HfO2-based memristor 48
A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films 48
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 48
Structural and Electrical Properties of ALD Deposited Er-HfO2 for Gate Dielectric 47
Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers 47
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 46
(Invited) Defects and Dopants in Silicon and Germanium Nanowires 46
MOCVD growth and structural characterization of In-Sb-Te nanowires 45
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si 44
Few electron limit of n-type metal oxide semiconductor single electron transistors 44
Silicene field-effect transistors operating at room temperature 44
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 43
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 43
Thermal resistance measurement of In3SbTe2 nanowires 42
Spin-dependent recombination and single charge dynamics in silicon nanostructrures 41
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 41
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films 40
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon 40
Experimental determination of the band offset of rare earth oxides on various semiconductors 39
O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates 39
Mass production of silicon MOS-SETs: Can we live with nano-devices' variability? 39
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 39
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface 39
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 38
4f excitations in Ce Kondo lattices studied by resonant inelastic x-ray scattering 38
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 38
Ozone-Based Atomic Layer Deposition of Alumina fromTMA: Growth, Morphology, and Reaction Mechanism 38
Non-Ideal X-Gate and Z-Gate in Semiconducting Spin Qubit Implementations 37
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 37
Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface 37
Interface engineering for Ge metal-oxide-semiconductor devices 37
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 36
Vibrational properties of epitaxial silicene layers on (1 1 1) Ag 36
Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises 36
Ru and RuO2 electrodes for advanced CMOS technology 36
Microwave irradiation effects on random telegraph signal in a MOSFET 35
Fabrication of GeO2 layers using a divalent Ge precursor 35
Analysis of the hyperfine structure in chalcogen-doped silicon and germanium nanowires 35
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires 35
Identification of substitutional and interstitial Fe in 6H-SiC 34
Evolution of crystallographic ordering in Hf1-xAlxOy high-k dielectric deposited by atomic layer deposition 34
Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) 34
Ultrafast dynamics in epitaxial silicene on Ag(111) 34
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 33
The influence of low temperature baking on the properties of SrBi2Ta2O9 films from metallorganic solutions 33
Paramagnetism in Mn/Fe implanted ZnO 33
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 33
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3ÕSi Interfaces for Advanced Gate Stacks 33
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 33
Electron spin resonance of substitutional nitrogen in silicon 33
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 33
Innovative dielectrics for semiconductor technology 33
The structure of charge-compensated Fe3+ ions in ZnO 32
Conduction band offset of HfO2 on GaAs 32
Microwave Effects in Silicon Low Dimensional Nanostructures 32
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 32
Fe3-?O4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition 32
Dielectric Properties of High-k Oxides: Theory and Experiment for Lu2O3 32
Raman spectroscopy of strain in subwavelength microelectronic devices 32
Negative cluster emission in sputtering of Si1-xGex alloys: A full spectrum approach 31
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O 3 layer 31
Trends of structural and electrical properties in atomic layer deposited HfO2 films 31
The magnetic interaction of Fe doped ZnO with intrinsic defects: A first principles study 31
Energy band alignment at TiO2/Si interface with various interlayers 31
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing 31
Theoretical aspects of graphene-like group IV semiconductors 31
Measuring the temperature of a mesoscopic electron system by means of single electron statistics 30
Growth and study of ultrathin insulating SiO2 and MgO layers on the ferromagnetic electrode surface 30
Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface 30
Atomic layer deposition of magnetic thin films 30
Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks 30
Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100) 30
A study of the growth of Lu2O3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy 30
Totale 4.373
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Categoria #
all - tutte 23.957
article - articoli 22.357
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 122
Totale 46.436
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202491 0 0 0 0 0 0 0 0 9 15 60 7
2024/20252.445 12 12 182 101 565 137 64 59 53 96 638 526
2025/20263.587 183 380 340 554 735 94 575 166 180 176 90 114
2026/2027232 232 0 0 0 0 0 0 0 0 0 0 0
Totale 6.355