CNR Institutional Research Information System

FANCIULLI, MARCO
 Distribuzione geografica
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Continente #
AS - Asia 3.171
NA - Nord America 1.537
SA - Sud America 623
EU - Europa 558
AF - Africa 47
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 5.941
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Nazione #
US - Stati Uniti d'America 1.476
SG - Singapore 1.467
CN - Cina 688
BR - Brasile 505
HK - Hong Kong 331
VN - Vietnam 319
FR - Francia 188
KR - Corea 136
IT - Italia 105
NL - Olanda 64
IN - India 58
AR - Argentina 51
DE - Germania 43
GB - Regno Unito 36
JP - Giappone 29
EC - Ecuador 25
FI - Finlandia 23
BD - Bangladesh 21
CA - Canada 21
ID - Indonesia 19
IL - Israele 19
MX - Messico 19
ZA - Sudafrica 19
IQ - Iraq 12
PL - Polonia 12
CO - Colombia 10
SE - Svezia 10
TR - Turchia 10
UA - Ucraina 10
VE - Venezuela 10
AT - Austria 9
CL - Cile 9
ES - Italia 8
EG - Egitto 7
RU - Federazione Russa 7
SA - Arabia Saudita 7
GR - Grecia 6
IE - Irlanda 6
MA - Marocco 6
PH - Filippine 6
PK - Pakistan 6
TW - Taiwan 5
UY - Uruguay 5
UZ - Uzbekistan 5
AL - Albania 4
AU - Australia 4
JM - Giamaica 4
MM - Myanmar 4
NP - Nepal 4
AZ - Azerbaigian 3
BE - Belgio 3
CZ - Repubblica Ceca 3
HN - Honduras 3
KE - Kenya 3
LT - Lituania 3
MY - Malesia 3
PE - Perù 3
PY - Paraguay 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
BB - Barbados 2
BG - Bulgaria 2
CH - Svizzera 2
CR - Costa Rica 2
DZ - Algeria 2
HU - Ungheria 2
JO - Giordania 2
LB - Libano 2
LK - Sri Lanka 2
OM - Oman 2
PA - Panama 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
TH - Thailandia 2
UG - Uganda 2
AE - Emirati Arabi Uniti 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
BJ - Benin 1
BO - Bolivia 1
BZ - Belize 1
CD - Congo 1
CG - Congo 1
CI - Costa d'Avorio 1
DK - Danimarca 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GI - Gibilterra 1
GY - Guiana 1
IR - Iran 1
KH - Cambogia 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
NO - Norvegia 1
PS - Palestinian Territory 1
PT - Portogallo 1
Totale 5.937
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Città #
Singapore 885
Santa Clara 676
Hong Kong 326
Hefei 238
San Jose 202
Beijing 169
Lauterbourg 157
Ho Chi Minh City 126
Seoul 126
Ashburn 102
Hanoi 74
Los Angeles 46
Buffalo 34
São Paulo 32
Guangzhou 28
Frankfurt am Main 19
New York 17
Rio de Janeiro 17
Belo Horizonte 15
Minamishinagawa 15
Dallas 14
Rome 14
Haiphong 13
Milan 12
Quito 12
Tokyo 12
Bengaluru 11
Bologna 11
Chennai 11
Goiânia 11
Orem 11
Helsinki 10
Brasília 9
Da Nang 9
Denver 9
London 9
Warsaw 9
Biên Hòa 8
Dhaka 8
Guayaquil 8
Brooklyn 7
Campinas 7
Düsseldorf 7
Johannesburg 7
Lappeenranta 7
Lecce 7
Montreal 7
New Delhi 7
Stockholm 7
Vienna 7
Atlanta 6
Can Tho 6
Charlotte 6
Memphis 6
Phoenix 6
Porto Alegre 6
Ribeirão Preto 6
Salvador 6
The Dalles 6
Turku 6
Anápolis 5
Baghdad 5
Dublin 5
Fortaleza 5
Houston 5
Munich 5
Newark 5
Nuremberg 5
Piracicaba 5
Recife 5
San Francisco 5
Santo André 5
Shanghai 5
Tashkent 5
Thái Bình 5
Thái Nguyên 5
Viterbo 5
Boston 4
Buenos Aires 4
Colombo 4
Elk Grove Village 4
Guastalla 4
Hyderabad 4
Hải Dương 4
Imperatriz 4
Kyiv 4
Mauá 4
Montevideo 4
New Orleans 4
Portsmouth 4
Santiago 4
Sorocaba 4
Uberlândia 4
Volta Redonda 4
Amsterdam 3
Ankara 3
Athens 3
Bari 3
Blumenau 3
Bogotá 3
Totale 3.816
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Nome #
Influence of Metal Interlayers on Spin-Charge Conversion in Sb2Te3 Topological Insulator-Based Devices 117
The 2022 magneto-optics roadmap 81
Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin 78
Ultraviolet optical near-fields of microspheres imprinted in phase change films 67
Vibrational and electrical properties of hexagonal La2O3 films 65
Analog memristive synapse in spiking networks implementing unsupervised learning 65
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 64
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 63
Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells 63
Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors 58
Donor incomplete ionization and mobility enhancement in ultra-thin silicon-on-insulator films doped by phosphorus end-terminated polymers 57
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 54
Ab initio study of magnetic interaction of Fe doped ZnO with intrinsic vacancies 53
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process 52
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 52
Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) 51
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching 51
Spin Pumping in Epitaxial Ge1‐xSnx Alloys 51
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 50
Switching quantum transport in a three donors silicon fin-field effect transistor 50
Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling 50
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 50
Adiabatic charge control in a single donor atom transistor 49
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 48
Synaptic potentiation and depression in Al:HfO2-based memristor 48
A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films 48
Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping 48
Structural and Electrical Properties of ALD Deposited Er-HfO2 for Gate Dielectric 47
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 46
Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers 46
(Invited) Defects and Dopants in Silicon and Germanium Nanowires 46
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor 45
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion 45
Few electron limit of n-type metal oxide semiconductor single electron transistors 43
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 42
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 42
MOCVD growth and structural characterization of In-Sb-Te nanowires 42
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si 41
Spin-dependent recombination and single charge dynamics in silicon nanostructrures 41
Thermal resistance measurement of In3SbTe2 nanowires 40
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 40
O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates 39
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon 39
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface 39
Experimental determination of the band offset of rare earth oxides on various semiconductors 38
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films 38
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 38
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 37
Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface 37
Interface engineering for Ge metal-oxide-semiconductor devices 37
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 36
4f excitations in Ce Kondo lattices studied by resonant inelastic x-ray scattering 36
Vibrational properties of epitaxial silicene layers on (1 1 1) Ag 36
Silicene field-effect transistors operating at room temperature 36
Mass production of silicon MOS-SETs: Can we live with nano-devices' variability? 35
Analysis of the hyperfine structure in chalcogen-doped silicon and germanium nanowires 35
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 35
Ozone-Based Atomic Layer Deposition of Alumina fromTMA: Growth, Morphology, and Reaction Mechanism 35
Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises 35
Non-Ideal X-Gate and Z-Gate in Semiconducting Spin Qubit Implementations 34
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires 34
Ultrafast dynamics in epitaxial silicene on Ag(111) 34
Identification of substitutional and interstitial Fe in 6H-SiC 33
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 33
Microwave irradiation effects on random telegraph signal in a MOSFET 33
Fabrication of GeO2 layers using a divalent Ge precursor 33
Evolution of crystallographic ordering in Hf1-xAlxOy high-k dielectric deposited by atomic layer deposition 33
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3ÕSi Interfaces for Advanced Gate Stacks 33
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 33
Electron spin resonance of substitutional nitrogen in silicon 33
Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) 33
Ru and RuO2 electrodes for advanced CMOS technology 33
Innovative dielectrics for semiconductor technology 33
The influence of low temperature baking on the properties of SrBi2Ta2O9 films from metallorganic solutions 32
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 32
The structure of charge-compensated Fe3+ ions in ZnO 31
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O 3 layer 31
Trends of structural and electrical properties in atomic layer deposited HfO2 films 31
Conduction band offset of HfO2 on GaAs 31
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 31
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 31
Dielectric Properties of High-k Oxides: Theory and Experiment for Lu2O3 31
Measuring the temperature of a mesoscopic electron system by means of single electron statistics 30
Paramagnetism in Mn/Fe implanted ZnO 30
Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface 30
Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks 30
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing 30
Raman spectroscopy of strain in subwavelength microelectronic devices 30
Negative cluster emission in sputtering of Si1-xGex alloys: A full spectrum approach 29
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 29
Microwave Effects in Silicon Low Dimensional Nanostructures 29
The magnetic interaction of Fe doped ZnO with intrinsic defects: A first principles study 29
Atomic layer deposition of magnetic thin films 29
Fe3-?O4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition 29
Energy band alignment at TiO2/Si interface with various interlayers 29
Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100) 29
Theoretical aspects of graphene-like group IV semiconductors 29
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 29
Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition 28
Electronic properties of pristine and Se doped [001] silicon nanowires: an ab initio study 27
Totale 4.121
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Categoria #
all - tutte 21.526
article - articoli 20.092
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 113
Totale 41.731
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202491 0 0 0 0 0 0 0 0 9 15 60 7
2024/20252.445 12 12 182 101 565 137 64 59 53 96 638 526
2025/20263.467 183 380 340 554 735 94 575 166 180 176 84 0
Totale 6.003