CNR Institutional Research Information System

MOSCATELLI, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 5.929
NA - Nord America 2.613
EU - Europa 1.520
SA - Sud America 1.148
AF - Africa 118
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 3
Totale 11.339
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Nazione #
SG - Singapore 2.537
US - Stati Uniti d'America 2.463
CN - Cina 1.346
BR - Brasile 938
VN - Vietnam 647
HK - Hong Kong 637
IT - Italia 393
FR - Francia 384
KR - Corea 246
FI - Finlandia 227
DE - Germania 120
BD - Bangladesh 94
GB - Regno Unito 93
IN - India 91
NL - Olanda 81
AR - Argentina 80
JP - Giappone 68
CA - Canada 53
AT - Austria 46
MX - Messico 39
ZA - Sudafrica 37
EC - Ecuador 36
ID - Indonesia 35
IL - Israele 35
PL - Polonia 25
ES - Italia 23
IQ - Iraq 23
CO - Colombia 22
TR - Turchia 20
UZ - Uzbekistan 18
CL - Cile 17
PK - Pakistan 17
PY - Paraguay 17
IE - Irlanda 16
UA - Ucraina 16
VE - Venezuela 16
RU - Federazione Russa 15
TN - Tunisia 14
EG - Egitto 12
KE - Kenya 12
SA - Arabia Saudita 12
AE - Emirati Arabi Uniti 11
MA - Marocco 11
PE - Perù 11
AL - Albania 10
CR - Costa Rica 10
JM - Giamaica 10
LT - Lituania 10
CI - Costa d'Avorio 9
PH - Filippine 9
SE - Svezia 9
UY - Uruguay 9
PT - Portogallo 8
AZ - Azerbaigian 7
JO - Giordania 7
NP - Nepal 7
TH - Thailandia 7
CZ - Repubblica Ceca 6
HN - Honduras 6
HU - Ungheria 6
MY - Malesia 6
PA - Panama 6
TT - Trinidad e Tobago 6
TW - Taiwan 6
AU - Australia 5
KZ - Kazakistan 5
LB - Libano 5
BB - Barbados 4
BE - Belgio 4
BG - Bulgaria 4
DO - Repubblica Dominicana 4
KW - Kuwait 4
MN - Mongolia 4
NI - Nicaragua 4
PS - Palestinian Territory 4
AM - Armenia 3
AO - Angola 3
BH - Bahrain 3
DZ - Algeria 3
GT - Guatemala 3
KG - Kirghizistan 3
LU - Lussemburgo 3
NZ - Nuova Zelanda 3
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
CW - ???statistics.table.value.countryCode.CW??? 2
EE - Estonia 2
GR - Grecia 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
LY - Libia 2
NO - Norvegia 2
OM - Oman 2
PR - Porto Rico 2
RO - Romania 2
TG - Togo 2
BS - Bahamas 1
BY - Bielorussia 1
CH - Svizzera 1
CV - Capo Verde 1
Totale 11.309
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Città #
Singapore 1.466
Hong Kong 631
Hefei 614
Santa Clara 473
San Jose 340
Lauterbourg 299
Ashburn 292
Seoul 242
Ho Chi Minh City 220
Beijing 172
Hanoi 171
Lappeenranta 169
Trieste 99
Council Bluffs 98
Dallas 96
Los Angeles 77
São Paulo 70
New York 54
Frankfurt am Main 53
Buffalo 47
Rome 39
Helsinki 38
Minamishinagawa 31
Tokyo 31
Nuremberg 30
Orem 28
Da Nang 27
Rio de Janeiro 27
Phoenix 25
Haiphong 24
Milan 24
Brooklyn 22
Belo Horizonte 21
Brasília 21
Camerino 20
Turku 20
Johannesburg 19
Bengaluru 18
Guangzhou 18
Curitiba 17
Vienna 17
Dhaka 16
Shanghai 16
Warsaw 15
Biên Hòa 14
Atlanta 13
Avellino 13
Houston 13
Hải Dương 13
London 13
Munich 13
Ninh Bình 13
Porto Alegre 13
Amsterdam 12
Denver 12
Manchester 12
Montreal 12
Quito 12
Tashkent 12
Baghdad 11
Chennai 11
Florence 11
Fortaleza 11
Mumbai 11
Nairobi 11
Queens 11
Wuhan 11
Asunción 10
Bexley 10
Abidjan 9
Campinas 9
Dublin 9
Düsseldorf 9
Mexico City 9
Miami 9
Santiago 9
Stockholm 9
The Bronx 9
Tirana 9
Boardman 8
Chicago 8
Elk Grove Village 8
Guayaquil 8
Istanbul 8
Montevideo 8
Naples 8
Nha Trang 8
Piscataway 8
San José 8
Shenzhen 8
Thái Bình 8
Thái Nguyên 8
Toronto 8
Wroclaw 8
Amman 7
Falkenstein 7
Joinville 7
Juiz de Fora 7
Kingston 7
Lima 7
Totale 6.797
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Nome #
Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance 145
A Front-End Circuit in 28 nm CMOS for Hydrogenated Amorphous Silicon Detectors in Clinical Dosimetry 106
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 98
A new calibration method for charm jet identification validated with proton-proton collision events at √s = 13TeV 92
TCAD modelling of a-Si:H devices for particle detection applications 85
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 84
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 82
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices 81
Characterization of thin carbonated LGADs after irradiation up to 2.5· 1015 n1 Mev eq./cm2 79
HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate 76
The CMS Phase-1 pixel detector upgrade 75
Characterization of MOS capacitors fabricated on n-type 4H-SiC 75
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 75
X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate 74
Measurement of the electroweak production of Zγ and two jets in proton-proton collisions at s =13 TeV and constraints on anomalous quartic gauge couplings 73
Search for stealth supersymmetry in final states with two photons, jets, and low missing transverse momentum in proton-proton collisions at Formula Presented 73
Scintillating fibers readout by single photon avalanche diodes (SPAD) for space applications 73
A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions 72
Search for a massive scalar resonance decaying to a light scalar and a Higgs boson in the four b quarks final state with boosted topology 70
Nuclear modification of Y states in pPb collisions at sNN=5.02TeV 70
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 70
The DAQ and control system for the CMS Phase-1 pixel detector upgrade 66
A hydrogenated amorphous silicon detector for Space Weather applications 66
Evidence for the Higgs boson decay to a Z boson and a photon at the LHC 66
Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy 64
Characterization of a flexible a‐Si:H detector for in vivo dosimetry in therapeutic x‐ray beams 63
Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate 62
Search for flavor changing neutral current interactions of the top quark in final states with a photon and additional jets in proton-proton collisions at Formula Presented 61
Development and test of innovative Low-Gain Avalanche Diodes for particle tracking in 4 dimensions 61
Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors 58
Search for heavy resonances decaying to ZZ or ZW and axion-like particles mediating nonresonant ZZ or ZH production at √s = 13 TeV 56
Higher-order moments of the elliptic flow distribution in PbPb collisions at sNN = 5.02 TeV 56
Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking 55
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 55
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 54
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 54
Measurement of the production cross section for a W boson in association with a charm quark in proton–proton collisions at √s=13TeV 54
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 54
Search for long-lived particles decaying to a pair of muons in proton-proton collisions at √s = 13 TeV 53
CMS pythia 8 colour reconnection tunes based on underlying-event data 52
Evidence for four-top quark production in proton-proton collisions at s=13TeV 51
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 51
Fabrication of a hydrogenated amorphous silicon detector in 3-d geometry and preliminary test on planar prototypes 49
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 49
Measurement of the inclusive and differential t t¯ γ cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at √s = 13 TeV 49
Search for Inelastic Dark Matter in Events with Two Displaced Muons and Missing Transverse Momentum in Proton-Proton Collisions at √s=13 TeV 48
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 48
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 47
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 47
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 47
Neutron irradiation of Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors 47
Extracting the speed of sound in quark-gluon plasma with ultrarelativistic lead-lead collisions at the LHC 46
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 46
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 46
Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors 45
Measurement of the production cross section for Z+b jets in proton-proton collisions at s =13 TeV 45
Measurement of Energy Correlators inside Jets and Determination of the Strong Coupling Formula Presented 45
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
Intercalibration of a polycrystalline 3D diamond detector for small field dosimetry 45
Constraints on anomalous Higgs boson couplings to vector bosons and fermions from the production of Higgs bosons using the ττ final state 44
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 44
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 44
Development of radiation tolerant semiconductor detectors for the Super-LHC 44
Luminosity determination using Z boson production at the CMS experiment 44
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 43
Development of the CMS detector for the CERN LHC Run 3 43
Measurement of the production cross section of a Higgs boson with large transverse momentum in its decays to a pair of τ leptons in proton-proton collisions at s=13TeV 43
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 43
Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors 43
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 43
Search for new physics in the τ lepton plus missing transverse momentum final state in proton-proton collisions at √s = 13 TeV 42
Measurement of simplified template cross sections of the Higgs boson produced in association with w or z bosons in the Formula Presented decay channel in proton-proton collisions at Formula Presented 42
Search for new particles in events with energetic jets and large missing transverse momentum in proton-proton collisions at √s = 13 TeV 42
Characterization of the FBK-LGAD devices manufactured at an external foundry for large-volume productions 42
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 41
KS0 and Λ(Λ‾) two-particle femtoscopic correlations in PbPb collisions at sNN=5.02TeV 41
Measurement of differential ZZ + jets production cross sections in pp collisions at s = 13 TeV 41
Measurement of the Dependence of the Hadron Production Fraction Ratios 𝑓𝑠⁡/𝑓𝑢 and 𝑓𝑑⁡/𝑓𝑢 on 𝐵 Meson Kinematic Variables in Proton-Proton Collisions at √𝑠=13  TeV 41
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 41
Precision measurement of the W boson decay branching fractions in proton-proton collisions at s =13 TeV 40
Two-particle azimuthal correlations in γp interactions using pPb collisions at sNN=8.16TeV 40
Measurement of the Higgs boson width and evidence of its off-shell contributions to ZZ production 40
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 40
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC 40
Search for a light pseudoscalar Higgs boson in the boosted mu mu tau tau final state in proton-proton collisions at root s=13 TeV 39
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 39
Measurement of the mass dependence of the transverse momentum of lepton pairs in Drell–Yan production in proton–proton collisions at √s=13TeV 39
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 39
Measurements of Higgs boson production in the decay channel with a pair of τ leptons in proton–proton collisions at √s=13 TeV 39
A search for new physics in central exclusive production using the missing mass technique with the CMS detector and the CMS-TOTEM precision proton spectrometer 39
Measurement of the Bs0→μ+μ− decay properties and search for the B0 → μ+μ− decay in proton-proton collisions at s=13TeV 39
TCAD investigation of Compensated LGAD Sensors for extreme fluence 39
Azimuthal correlations in Z +jets events in proton–proton collisions at √s=13TeV 39
Development of a CZT Spectroscopic 3D Imager Prototype for Hard X Ray Astronomy 39
Search for long-lived particles using displaced jets in proton-proton collisions at s =13 TeV 38
Measurements of azimuthal anisotropy of nonprompt D0 mesons in PbPb collisions at sNN=5.02TeV 38
Evaluation of HPK n+-p planar pixel sensors for the CMS Phase-2 upgrade 38
Evidence for X(3872) in Pb-Pb Collisions and Studies of its Prompt Production at sNN =5.02 TeV 38
Totale 5.415
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Categoria #
all - tutte 46.052
article - articoli 37.619
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 83.671
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/2024214 0 0 0 0 0 0 0 0 4 0 186 24
2024/20254.425 15 10 218 476 590 140 118 207 95 155 1.314 1.087
2025/20267.122 374 706 691 1.073 1.168 284 1.021 396 447 418 212 332
2026/2027275 275 0 0 0 0 0 0 0 0 0 0 0
Totale 12.036