CNR Institutional Research Information System

MOSCATELLI, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 5.885
NA - Nord America 2.085
EU - Europa 1.470
SA - Sud America 1.144
AF - Africa 118
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 2
Totale 10.712
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Nazione #
SG - Singapore 2.537
US - Stati Uniti d'America 1.971
CN - Cina 1.342
BR - Brasile 936
VN - Vietnam 647
HK - Hong Kong 637
FR - Francia 384
IT - Italia 353
KR - Corea 246
FI - Finlandia 227
DE - Germania 120
IN - India 91
GB - Regno Unito 88
AR - Argentina 80
NL - Olanda 80
JP - Giappone 68
BD - Bangladesh 58
AT - Austria 46
CA - Canada 39
MX - Messico 39
ZA - Sudafrica 37
EC - Ecuador 35
ID - Indonesia 35
IL - Israele 35
PL - Polonia 25
IQ - Iraq 23
CO - Colombia 22
ES - Italia 21
TR - Turchia 20
UZ - Uzbekistan 18
PY - Paraguay 17
CL - Cile 16
IE - Irlanda 16
PK - Pakistan 16
UA - Ucraina 16
VE - Venezuela 16
RU - Federazione Russa 15
TN - Tunisia 14
EG - Egitto 12
KE - Kenya 12
SA - Arabia Saudita 12
AE - Emirati Arabi Uniti 11
MA - Marocco 11
PE - Perù 11
AL - Albania 10
LT - Lituania 10
CI - Costa d'Avorio 9
PH - Filippine 9
SE - Svezia 9
UY - Uruguay 9
AZ - Azerbaigian 7
JO - Giordania 7
PT - Portogallo 7
TH - Thailandia 7
CZ - Repubblica Ceca 6
NP - Nepal 6
PA - Panama 6
TW - Taiwan 6
AU - Australia 5
CR - Costa Rica 5
HU - Ungheria 5
JM - Giamaica 5
KZ - Kazakistan 5
LB - Libano 5
BE - Belgio 4
BG - Bulgaria 4
DO - Repubblica Dominicana 4
HN - Honduras 4
KW - Kuwait 4
MN - Mongolia 4
MY - Malesia 4
PS - Palestinian Territory 4
AM - Armenia 3
AO - Angola 3
BH - Bahrain 3
DZ - Algeria 3
GT - Guatemala 3
KG - Kirghizistan 3
LU - Lussemburgo 3
NZ - Nuova Zelanda 3
TT - Trinidad e Tobago 3
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BO - Bolivia 2
EE - Estonia 2
GR - Grecia 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
LY - Libia 2
NO - Norvegia 2
OM - Oman 2
RO - Romania 2
TG - Togo 2
BY - Bielorussia 1
CH - Svizzera 1
CV - Capo Verde 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
ET - Etiopia 1
GA - Gabon 1
Totale 10.683
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Città #
Singapore 1.466
Hong Kong 631
Hefei 614
Santa Clara 467
Lauterbourg 299
Seoul 242
San Jose 228
Ho Chi Minh City 220
Ashburn 205
Beijing 171
Hanoi 171
Lappeenranta 169
Trieste 99
Council Bluffs 98
Dallas 88
Los Angeles 73
São Paulo 70
Frankfurt am Main 53
New York 52
Buffalo 44
Helsinki 38
Rome 33
Minamishinagawa 31
Tokyo 31
Nuremberg 30
Orem 28
Da Nang 27
Rio de Janeiro 25
Haiphong 24
Belo Horizonte 21
Brasília 21
Camerino 20
Phoenix 20
Turku 20
Johannesburg 19
Bengaluru 18
Guangzhou 18
Brooklyn 17
Curitiba 17
Vienna 17
Dhaka 16
Shanghai 16
Milan 15
Warsaw 15
Biên Hòa 14
Atlanta 13
Avellino 13
Hải Dương 13
Munich 13
Ninh Bình 13
Porto Alegre 13
Amsterdam 12
Denver 12
London 12
Manchester 12
Quito 12
Tashkent 12
Baghdad 11
Chennai 11
Fortaleza 11
Mumbai 11
Nairobi 11
Wuhan 11
Asunción 10
Bexley 10
Houston 10
Montreal 10
Abidjan 9
Campinas 9
Dublin 9
Düsseldorf 9
Mexico City 9
Stockholm 9
Tirana 9
Elk Grove Village 8
Guayaquil 8
Istanbul 8
Montevideo 8
Nha Trang 8
Santiago 8
Shenzhen 8
Thái Bình 8
Thái Nguyên 8
Wroclaw 8
Amman 7
Chicago 7
Falkenstein 7
Florence 7
Joinville 7
Juiz de Fora 7
Lima 7
Miami 7
Osasco 7
Poplar 7
Roubaix 7
Seattle 7
Sorocaba 7
Tunis 7
Ankara 6
Baku 6
Totale 6.520
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Nome #
Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance 144
A Front-End Circuit in 28 nm CMOS for Hydrogenated Amorphous Silicon Detectors in Clinical Dosimetry 102
A new calibration method for charm jet identification validated with proton-proton collision events at √s = 13TeV 89
Precision measurement of the structure of the CMS inner tracking system using nuclear interactions 89
TCAD modelling of a-Si:H devices for particle detection applications 84
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 83
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices 80
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 79
Characterization of thin carbonated LGADs after irradiation up to 2.5· 1015 n1 Mev eq./cm2 76
The CMS Phase-1 pixel detector upgrade 74
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 74
Characterization of MOS capacitors fabricated on n-type 4H-SiC 73
HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate 73
Search for stealth supersymmetry in final states with two photons, jets, and low missing transverse momentum in proton-proton collisions at Formula Presented 72
Scintillating fibers readout by single photon avalanche diodes (SPAD) for space applications 71
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 70
Measurement of the electroweak production of Zγ and two jets in proton-proton collisions at s =13 TeV and constraints on anomalous quartic gauge couplings 69
Search for a massive scalar resonance decaying to a light scalar and a Higgs boson in the four b quarks final state with boosted topology 69
Nuclear modification of Y states in pPb collisions at sNN=5.02TeV 69
X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate 69
The DAQ and control system for the CMS Phase-1 pixel detector upgrade 63
Characterization of a flexible a‐Si:H detector for in vivo dosimetry in therapeutic x‐ray beams 63
Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy 63
A hydrogenated amorphous silicon detector for Space Weather applications 62
Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate 62
Evidence for the Higgs boson decay to a Z boson and a photon at the LHC 62
Search for flavor changing neutral current interactions of the top quark in final states with a photon and additional jets in proton-proton collisions at Formula Presented 61
Development and test of innovative Low-Gain Avalanche Diodes for particle tracking in 4 dimensions 59
Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors 57
Higher-order moments of the elliptic flow distribution in PbPb collisions at sNN = 5.02 TeV 54
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 53
Search for heavy resonances decaying to ZZ or ZW and axion-like particles mediating nonresonant ZZ or ZH production at √s = 13 TeV 53
Search for long-lived particles decaying to a pair of muons in proton-proton collisions at √s = 13 TeV 52
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 52
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 52
Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking 51
CMS pythia 8 colour reconnection tunes based on underlying-event data 51
Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade 50
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 49
Measurement of the inclusive and differential t t¯ γ cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at √s = 13 TeV 49
Evidence for four-top quark production in proton-proton collisions at s=13TeV 48
Fabrication of a hydrogenated amorphous silicon detector in 3-d geometry and preliminary test on planar prototypes 47
Search for Inelastic Dark Matter in Events with Two Displaced Muons and Missing Transverse Momentum in Proton-Proton Collisions at √s=13 TeV 46
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 46
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 46
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 46
Measurement of the production cross section for a W boson in association with a charm quark in proton–proton collisions at √s=13TeV 46
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 45
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 45
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 45
Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors 44
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 44
A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions 44
Neutron irradiation of Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors 44
Measurement of Energy Correlators inside Jets and Determination of the Strong Coupling Formula Presented 43
Development of the CMS detector for the CERN LHC Run 3 43
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 43
Luminosity determination using Z boson production at the CMS experiment 43
Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors 43
Measurement of the production cross section for Z+b jets in proton-proton collisions at s =13 TeV 42
Extracting the speed of sound in quark-gluon plasma with ultrarelativistic lead-lead collisions at the LHC 42
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 42
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 42
Intercalibration of a polycrystalline 3D diamond detector for small field dosimetry 42
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 42
Measurement of simplified template cross sections of the Higgs boson produced in association with w or z bosons in the Formula Presented decay channel in proton-proton collisions at Formula Presented 41
Measurement of the production cross section of a Higgs boson with large transverse momentum in its decays to a pair of τ leptons in proton-proton collisions at s=13TeV 41
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 41
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 41
Constraints on anomalous Higgs boson couplings to vector bosons and fermions from the production of Higgs bosons using the ττ final state 40
Search for new particles in events with energetic jets and large missing transverse momentum in proton-proton collisions at √s = 13 TeV 40
Development of radiation tolerant semiconductor detectors for the Super-LHC 40
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC 40
Precision measurement of the W boson decay branching fractions in proton-proton collisions at s =13 TeV 39
Search for a light pseudoscalar Higgs boson in the boosted mu mu tau tau final state in proton-proton collisions at root s=13 TeV 39
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 39
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 39
KS0 and Λ(Λ‾) two-particle femtoscopic correlations in PbPb collisions at sNN=5.02TeV 39
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 39
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 39
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 39
Two-particle azimuthal correlations in γp interactions using pPb collisions at sNN=8.16TeV 38
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 38
Measurement of differential ZZ + jets production cross sections in pp collisions at s = 13 TeV 38
Search for long-lived particles using displaced jets in proton-proton collisions at s =13 TeV 38
Measurement of the mass dependence of the transverse momentum of lepton pairs in Drell–Yan production in proton–proton collisions at √s=13TeV 38
Measurement of the Dependence of the Hadron Production Fraction Ratios 𝑓𝑠⁡/𝑓𝑢 and 𝑓𝑑⁡/𝑓𝑢 on 𝐵 Meson Kinematic Variables in Proton-Proton Collisions at √𝑠=13  TeV 38
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 38
Development of a CZT Spectroscopic 3D Imager Prototype for Hard X Ray Astronomy 38
Measurement of the Higgs boson width and evidence of its off-shell contributions to ZZ production 37
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 37
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 37
TCAD investigation of Compensated LGAD Sensors for extreme fluence 37
Evaluation of HPK n+-p planar pixel sensors for the CMS Phase-2 upgrade 36
A search for new physics in central exclusive production using the missing mass technique with the CMS detector and the CMS-TOTEM precision proton spectrometer 36
Azimuthal correlations in Z +jets events in proton–proton collisions at √s=13TeV 36
Characterization of the FBK-LGAD devices manufactured at an external foundry for large-volume productions 36
Combined search for electroweak production of winos, binos, higgsinos, and sleptons in proton-proton collisions at Formula Presented 36
Device simulation of irradiated silicon detectors at cryogenic temperatures 35
Evidence for tWZ production in proton-proton collisions at s=13 TeV in multilepton final states 35
Totale 5.168
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Categoria #
all - tutte 42.011
article - articoli 34.355
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 76.366
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/2024214 0 0 0 0 0 0 0 0 4 0 186 24
2024/20254.425 15 10 218 476 590 140 118 207 95 155 1.314 1.087
2025/20266.770 374 706 691 1.073 1.168 284 1.021 396 447 418 192 0
Totale 11.409