CNR Institutional Research Information System

FRIGERI, CESARE
 Distribuzione geografica
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Continente #
AS - Asia 5.768
NA - Nord America 3.623
EU - Europa 1.508
SA - Sud America 1.084
AF - Africa 85
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 1
Totale 12.077
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Nazione #
US - Stati Uniti d'America 3.501
SG - Singapore 2.554
CN - Cina 1.209
BR - Brasile 893
HK - Hong Kong 684
RU - Federazione Russa 668
VN - Vietnam 594
FR - Francia 349
KR - Corea 245
DE - Germania 140
IT - Italia 103
IN - India 94
JP - Giappone 75
AR - Argentina 71
BD - Bangladesh 59
GB - Regno Unito 51
MX - Messico 44
CA - Canada 38
IL - Israele 36
FI - Finlandia 35
NL - Olanda 35
ID - Indonesia 32
CO - Colombia 27
EC - Ecuador 25
IQ - Iraq 25
UA - Ucraina 22
MA - Marocco 19
PK - Pakistan 19
TR - Turchia 19
CL - Cile 17
PY - Paraguay 17
AT - Austria 16
UZ - Uzbekistan 16
SA - Arabia Saudita 14
ZA - Sudafrica 14
AE - Emirati Arabi Uniti 13
EG - Egitto 13
PL - Polonia 13
AZ - Azerbaigian 12
VE - Venezuela 12
ES - Italia 10
SE - Svezia 10
AL - Albania 9
PE - Perù 9
BO - Bolivia 8
KE - Kenya 8
TH - Thailandia 8
DO - Repubblica Dominicana 7
AU - Australia 6
BE - Belgio 6
DZ - Algeria 6
JO - Giordania 6
KZ - Kazakistan 6
LB - Libano 6
PA - Panama 6
TN - Tunisia 6
JM - Giamaica 5
KG - Kirghizistan 5
TT - Trinidad e Tobago 5
BH - Bahrain 4
CI - Costa d'Avorio 4
OM - Oman 4
PH - Filippine 4
RO - Romania 4
RS - Serbia 4
SN - Senegal 4
AO - Angola 3
CR - Costa Rica 3
HN - Honduras 3
IR - Iran 3
LV - Lettonia 3
MY - Malesia 3
NP - Nepal 3
PT - Portogallo 3
UY - Uruguay 3
BG - Bulgaria 2
BY - Bielorussia 2
CH - Svizzera 2
CZ - Repubblica Ceca 2
EE - Estonia 2
GE - Georgia 2
GR - Grecia 2
GT - Guatemala 2
IE - Irlanda 2
KH - Cambogia 2
LK - Sri Lanka 2
LT - Lituania 2
MK - Macedonia 2
SI - Slovenia 2
SR - Suriname 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BS - Bahamas 1
BW - Botswana 1
ET - Etiopia 1
Totale 12.053
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Città #
Singapore 1.609
Dallas 1.340
Santa Clara 930
Hong Kong 673
Hefei 574
Lauterbourg 299
San Jose 275
Seoul 240
Ho Chi Minh City 196
Ashburn 152
Hanoi 143
Beijing 142
Frankfurt am Main 99
Los Angeles 76
São Paulo 60
Buffalo 45
Da Nang 39
Orem 38
Minamishinagawa 35
Tokyo 35
Bengaluru 29
Rio de Janeiro 26
New York 25
Helsinki 24
Brasília 20
Haiphong 20
Belo Horizonte 17
Curitiba 17
Guangzhou 16
Hải Dương 15
Milan 15
Thái Nguyên 15
Chennai 14
Nuremberg 14
Porto Alegre 14
Tashkent 14
Phoenix 13
Biên Hòa 11
Brooklyn 11
Campinas 11
Goiânia 11
Dhaka 10
Guayaquil 10
Mumbai 10
São Bernardo do Campo 10
Asunción 9
Baghdad 9
Baku 9
Johannesburg 9
Mexico City 9
Rome 9
Thái Bình 9
West Jordan 9
Ankara 8
Cairo 8
Chicago 8
Elk Grove Village 8
Manchester 8
Salvador 8
Turku 8
Warsaw 8
Atlanta 7
Bogotá 7
Buenos Aires 7
Lấp Vò 7
Manaus 7
Munich 7
Amman 6
Belém 6
Bologna 6
Boston 6
Caxias do Sul 6
Changsha 6
Formosa 6
Juiz de Fora 6
Lahore 6
Lima 6
London 6
Quito 6
São José do Rio Preto 6
Vĩnh Long 6
Brussels 5
Bắc Giang 5
Bến Tre 5
Can Tho 5
Caracas 5
Carapicuíba 5
Charlotte 5
Duque de Caxias 5
Florianópolis 5
Fortaleza 5
Guarulhos 5
Ha Long 5
Jeddah 5
Joinville 5
Limeira 5
Medellín 5
Miami 5
Nairobi 5
Ninh Bình 5
Totale 7.749
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Nome #
(002) DF and HRTEM study of In surface segregation in InGaAs-based MQWs MOCVD grown with different barrier layers 2.140
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 86
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 86
Functionalization of carbon nanotubes for nitroaromatic explosive detection 84
Strain Evaluation in SiC MEMS Test Structures 79
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars 78
Growth and functionalization of carbon nanotubes for nitroaromatic explosive detection 75
Diffusion and reaction kinetics governing surface blistering in RF sputtered hydrogenated a-SixGe1-x (0<= x <=1) thin films 73
Growth of InGaAs/GaAs on Offcut Substrates by MOVPE: Influence on Macrosteps and Dislocations Formation 71
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 71
Majority carrier assessment by EBIC: determination of dopant concentration at composition inhomogeneities 70
On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates 69
Combination of selective etching and AFM imaging for the thickness analysis of AlGaAs/InGaA/GaAs heterostructures 66
The effect of feeding phase stoichiometry on the origin of crystal defects in hydride VPE InP layers 62
Influence of the In content inhomogeneities on the generation of <010> misfit dislocations in MOVPE InGaAs SQWs 61
Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis 61
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 61
The effect of V/III ratio on the interface defectivity of GaAs/Ge heterostructures 60
Evaluation of MBE grown GaAlAs/GaAs Multilayered Structures 59
Influence of the growth conditions on the properties of germanium epilayers grown by MOVPE on Si 57
Spectral characteristics of InP/InGaAsP Infrared Emitting Diodes grown by LPE 56
UnExploDe: Portable Sensors for Unmanned Explosive Detection 55
On the influence of defects on epitaxial InP layers 54
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 54
Investigation of CdS/InP heterojunction prepared by chemical bath deposition 52
Device quality crystal growth of GaAs 52
Microdefect studies of Fe-doped Semi-Insulating InP 52
High-temperature magnetic coercivity of CNTs filled with multi-phase Febased nanoparticles 52
Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods 51
A reassessment of Te-doped GaAs 51
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 51
MBE GaAs microcrystals on patterned Si : a defect study 50
Cross-sectional TEM study of subsurface damage in SPDT machining of germanium optics 50
AFM and TEM study of hydrogenated sputtered Si/Ge multilayers 49
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 49
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 48
Synthesis of germanium nanowires and carbon nanotubes tailored to explosive detection 48
Investigation of CdS/InP heterojunction prepared by chemical bath 47
Epitaxial growth and Characterization of ternary and quaternary III-V semiconductors 47
On the arise of molecular hydrogen in the hydrogenated amorphous silicon, germanium and their alloys 46
Diamagnetic substitution in LaSCO and YBCO superconductors: study of Cd- and Sn- systems 45
Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells 45
Growth of 3C-SiC nanowires and layers on Si 45
Investigation of the defect structures in CZ silicon crystals annealed in either oxygen or nitrogen atmosphere 44
An EBIC method for the quantitative determination of dopant concentration at striations in LEC GaAs 44
Analyis of InGaP/Ge Heteroepitaxy 41
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor 41
Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in LEC GaAs 41
Vegard's law relationship between the activation energy for blister formation and the Si concentration in RF co-sputtered a-SixGe1-x layers 41
Raman and Luminescence Spectroscopy for Microelectronics: Catalogue of Optical and Physical Parameters, 'Nostradamus' Project SMT4-CT-95-2024 40
Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 <= x <= 1) thin films 39
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 39
Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films 39
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 38
MOVPE growth and characterization of heteroepitaxial germaniumon silicon using iBuGe as precursor 38
Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x 38
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates 38
A study of defects in LEC GaAs after copper diffusion 37
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 37
Epitaxial growth and electrical characterization of germanium 37
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 37
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 36
Epitaxial germanium for photovoltaic or opto-electronic applications 36
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering 36
Recent developments in the study of bulk GaAs properties by electron microscopy 35
From nano-voids to blisters in hydrogenated amorphous silicon 35
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 35
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions 35
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 35
Investigation of InxGa1-xN multi-quantum wells for energy efficiency light emitting diode 35
Investigation of silicon oxynitride and amorphous silicon multilayers 35
On the mechanisms of hydrogen-induced blistering in RF-sputtered amorphous Ge 35
GaAs Sub-Micron and Nano Islands by Droplet Epitaxy on Si 34
Relationship between V/III ratio and generation of defects in MOVPE grown (001) GaAs/Ge heterostructures 34
EBIC and DLTS study of not-intentionally contaminated Si epistructures submitted to segregation and relaxation gettering 34
Competition between internal and heavy doping gettering options in epi-silicon 34
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 34
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor 34
III-V and Ge homo and hetero-hepitaxy layers grown by MOVPE 34
Inhomogeneity in LEC GaAs substrates for solar cell applications 34
A reassessment of Te-doped GaAs 33
Structure and Strain Relaxation in Self-Assisted Grown InAs/GaAs Nanowires 33
EBIC assessment of semiconductors properties 33
A structural characterization of GaAs MBE grown on Si pillars 33
Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications 33
SEM-EBIC and DSL photoetching analysis of compositional inhomogeneity in LEC GaAs 32
Stresses in SiC MEMS test structures 32
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering 32
Epitaxial preparation of germanium cells for photovoltaic and thermophotovoltaic applications 32
InAs/GaAs sharply-defined axial heterostructures in self-assisted nanowires 32
Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory 31
Proton radiation effects on semi-insulating GaAs detectors 31
Relazione sulle attività completate nel 4° semestre, periodo 20/09/2009-20/02/2010 del progetto 1 31
Electron beam-induced current 31
TEM, SEM and AFM study of hydrogenated sputtered Si/Ge multilayers 30
X-Ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth processes 30
In-depth analysis of the interfaces in InGaAs/InGaP heterosystem 30
Composition determination of the interlayer at the inverted interfaces in InGaP/GaAs heterojunctions 30
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE 30
Relationship between interfacial defects and growth processes in GaAs/Ge heterostructures 30
Totale 6.616
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Categoria #
all - tutte 39.349
article - articoli 11.316
book - libri 201
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.642
Totale 52.508
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202444 0 0 0 0 0 0 0 0 6 8 26 4
2024/20253.826 10 20 326 234 780 163 37 59 49 55 1.146 947
2025/20268.226 297 1.066 1.580 1.029 1.217 131 1.039 398 1.035 259 175 0
Totale 12.096