FRIGERI, CESARE
 Distribuzione geografica
Continente #
AS - Asia 29
NA - Nord America 10
EU - Europa 7
Totale 46
Nazione #
CN - Cina 16
US - Stati Uniti d'America 10
KR - Corea 9
IT - Italia 3
GB - Regno Unito 2
SG - Singapore 2
IN - India 1
JP - Giappone 1
NL - Olanda 1
SE - Svezia 1
Totale 46
Città #
Seoul 9
West Jordan 8
Guangzhou 5
Brescia 2
Amsterdam 1
Boardman 1
Glasgow 1
London 1
Singapore 1
Tokyo 1
Totale 30
Nome #
(002) DF and HRTEM study of In surface segregation in InGaAs-based MQWs MOCVD grown with different barrier layers 8
Device quality crystal growth of GaAs 2
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 2
Effects of the melt composition on structural and electrical characteristics of bulk Gallim Arsenide 2
Nanostructured TiO2 and W:TiO2 Thin Films by a Novel Sol-Gel Processing for Alcohol Sensing Devices 2
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 2
Inhomogeneity in LEC GaAs substrates for solar cell applications 2
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 1
A reassessment of Te-doped GaAs 1
Microdefect studies of Fe-doped Semi-Insulating InP 1
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 1
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications 1
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 1
On the arise of molecular hydrogen in the hydrogenated amorphous silicon, germanium and their alloys 1
From nano-voids to blisters in hydrogenated amorphous silicon 1
A study of dislocations, precipitates and deep level EL2 in LEC GaAs grown under Ga-rich conditions 1
Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods 1
Cross-sectional TEM study of degraded high power diode lasers 1
Influence of compositional macrosteps on the reduction of the critical thickness by generation of <010> misfit dislocations in InGaAs/GaAs quantum wells 1
Competition between internal and heavy doping gettering options in epi-silicon 1
EBIC assessment of semiconductors properties 1
An EBIC method for the quantitative determination of dopant concentration at striations in LEC GaAs 1
EBIC Characterization of LEC GaAs 1
Complementary study of Indentation-induced dislocations in GaAs and InP by Photoetching, SEM, EBIC and SPL 1
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 1
Structural Analysis of InGaP/GaAs Layers Grown by MOVPE 1
Characterization of LEC GaAs by electron beam induced current analysis 1
Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in LEC GaAs 1
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates 1
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 1
The role of stoichiometric ratio on the very early growth stages of GaAs/Ge heterostructure 1
Inhomogeneities of multiple quantum wells investigated by SEM-Cathodoluminescence 1
UnExploDe: Portable Sensors for Unmanned Explosive Detection 1
Totale 46
Categoria #
all - tutte 2.932
article - articoli 843
book - libri 12
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 121
Totale 3.908


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202444 0 0 0 0 0 0 0 0 6 8 26 4
2024/20252 2 0 0 0 0 0 0 0 0 0 0 0
Totale 46