CNR Institutional Research Information System

ARMIGLIATO, ALDO
 Distribuzione geografica
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Continente #
AS - Asia 1.222
NA - Nord America 521
EU - Europa 260
SA - Sud America 216
AF - Africa 16
OC - Oceania 1
Totale 2.236
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Nazione #
SG - Singapore 550
US - Stati Uniti d'America 494
CN - Cina 303
BR - Brasile 169
VN - Vietnam 143
HK - Hong Kong 107
FR - Francia 88
NL - Olanda 77
KR - Corea 53
IT - Italia 27
AR - Argentina 23
FI - Finlandia 14
JP - Giappone 14
ID - Indonesia 12
GB - Regno Unito 11
IN - India 11
MX - Messico 10
CA - Canada 9
EC - Ecuador 9
ES - Italia 7
ZA - Sudafrica 7
BD - Bangladesh 6
DE - Germania 6
IL - Israele 6
PL - Polonia 6
RU - Federazione Russa 5
SE - Svezia 5
PY - Paraguay 4
TR - Turchia 4
UA - Ucraina 4
VE - Venezuela 4
CO - Colombia 3
CL - Cile 2
CR - Costa Rica 2
DZ - Algeria 2
HN - Honduras 2
LB - Libano 2
MA - Marocco 2
PE - Perù 2
UZ - Uzbekistan 2
AO - Angola 1
AT - Austria 1
BH - Bahrain 1
BS - Bahamas 1
BY - Bielorussia 1
EG - Egitto 1
GR - Grecia 1
HR - Croazia 1
IE - Irlanda 1
JM - Giamaica 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
MD - Moldavia 1
MZ - Mozambico 1
NP - Nepal 1
NZ - Nuova Zelanda 1
OM - Oman 1
PH - Filippine 1
PK - Pakistan 1
RO - Romania 1
RS - Serbia 1
RW - Ruanda 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TG - Togo 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
VI - Stati Uniti Isole Vergini 1
Totale 2.236
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Città #
Singapore 306
Santa Clara 256
Hong Kong 105
Hefei 101
Beijing 82
Lauterbourg 64
Seoul 49
Ho Chi Minh City 47
San Jose 44
Ashburn 33
Hanoi 21
Los Angeles 15
Dallas 14
Helsinki 11
São Paulo 10
Haiphong 8
Porto Alegre 8
Buffalo 7
Milan 7
Minamishinagawa 7
Rio de Janeiro 7
New York 6
Tokyo 6
Da Nang 5
Elk Grove Village 5
Americana 4
Buenos Aires 4
Bắc Giang 4
Chennai 4
Council Bluffs 4
Hải Dương 4
Phoenix 4
Wroclaw 4
Biên Hòa 3
Can Tho 3
Curitiba 3
Guangzhou 3
Guayaquil 3
Houston 3
Madrid 3
Marseille 3
Ninh Bình 3
Orem 3
Quito 3
Roubaix 3
Salvador 3
Thái Nguyên 3
Turku 3
Vĩnh Long 3
Asunción 2
Atlanta 2
Bandung 2
Belo Horizonte 2
Bengaluru 2
Bexley 2
Bologna 2
Brasília 2
Chengdu 2
Chicago 2
Chongqing 2
Contagem 2
Coro 2
Curvelo 2
Cà Mau 2
Durban 2
Fort Worth 2
Fortaleza 2
Frankfurt am Main 2
Gangnam-gu 2
Guarulhos 2
Hà Tĩnh 2
Jackson 2
Jakarta 2
Johannesburg 2
Lecce 2
Lima 2
Limbiate 2
Long An 2
Mumbai 2
Nova Iguaçu 2
Padua 2
Phủ Lý 2
Piscataway 2
Poplar 2
Portland 2
Praia Grande 2
Quận Bảy 2
Quận Phú Nhuận 2
Rome 2
San José 2
Sorocaba 2
Stockholm 2
Sumaré 2
Suzhou 2
São José dos Campos 2
Tashkent 2
Toronto 2
Trieste 2
Warsaw 2
Abohar 1
Totale 1.405
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Nome #
Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation as interlayer between WC-Co hard metals and CVD diamond films 63
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 59
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices 56
Stress engineering in Si based micro structures using technology computer-aided design 56
Modern developments and applications in microbeam analysis. Proceedings of the 9(th) Workshop of the European Microbeam Analysis Society (EMAS) and the 3(rd) Meeting of the International Union of Microbeam Analysis Societies (IUMAS), Florence, Italy, May 55
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures 54
Quantitative strain mapping in nanoelectronic silicon devices by convergent beam electron diffraction 49
Split HOLZ lines analysis as a tool to map the strain field in patterned nanostructure 48
Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry 45
Diaframma per microscopio elettronico e procedimento per realizzare tale diaframma 43
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films 43
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 41
Application of the parametric bootstrap method to determine statistical errors in quantitative X-ray microanalysis of thin films 39
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 39
X-Ray Microanalysis Combined with Monte Carlo Simulation for the Analysis of Layered Thin Films: The Case of Carbon Contamination 38
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 38
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 38
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 37
HOLZ Line Splitting coupled to a Recursive Procedure. A Tool for the Displacement Field Determination in Nanostructures 35
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 34
Dislocation generation in device fabrication process 32
Presentazione orale 32
Strain measurements in thin film structures by convergent beam electron diffraction 32
MIcrochimica Acta: Proceedings of the 9th Workshop of European Microbean analysis Society (EMAS) and the 3rd Meeting og the International Union of Microbean Analysis Societies (IUMAS), Florence, Italy, may 22-26, 2005 32
Analytical electron microscopy of Si 1- x Ge x/Si heterostructures and local isolation structures 31
Lattice strain and static disorder determination in Si/Si_ {1-x} Ge_ {x}/Si heterostructures by convergent beam electron diffraction 31
DEPTH PROFILES AND DAMAGE ANNEALING OF 1.06-MEV AS-2+ IMPLANTED IN SILICON 31
Nano beam and convergent beam elecron diffraction for strain anaysis in nano-electronics 31
Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations. 31
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures 31
Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns 30
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 30
Microanalisi a Raggi X e microdiffrazione a fascio convergente: applicazioni al silicio 29
Strain analysis of deep sub-micron CMOS devices by TEM/CBED in the < 230 > zone axis 29
FIB Preparation of a NiO Wedge-Lamella and STEM X-Ray Microanalysis for the Determination of the Experimental k(O-Ni) Cliff-Lorimer Coefficient 29
Strain determination in submicron isolation structures by TEM/CBED 28
TEM/CBED determination of strain in silicon-based submicrometric electronic devices 28
Quantitative X-ray microanalysis of thin NiO films by Monte Carlo and Cliff-Lorimer methods 28
On the Spatial Resolution in Analytical Electron Microscopy 27
On the strain determination in cross-sectioned heterostructures by TEM/LACBED 27
Structural and analytical characterization of Si1-xGex heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double X-ray diffractometry 27
Damage and recovery in boron doped SOI layers after high energy implantation 26
Quantitative thin-film X-ray microanalysis by STEM/HAADF: Statistical analysis for precision and accuracy determination 26
Damage and recovery in doped SOI layers after high energy implantation 24
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 24
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 24
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 24
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED 23
Analysis of localised strains in crystals by convergent beam electron diffraction 23
Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements 23
Microanalisi a raggi X e microdiffrazione a fascio convergente:applicazioni al Silicio 22
Strain analysis in submicron electron devices by convergent beam electron diffraction 22
Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction 22
Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy 22
The nature of electrically inactive antimony in silicon 22
Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction 22
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 21
Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction 21
Planar defects and misfit dislocations in (001) GaAs/Ge heterostructures MOCVD grown with different V/III ratio 21
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process, simulation, and micro-Raman spectroscopy 21
Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray microdiffraction and modeling 20
Strain analysis in sub-micron silicon devices by TEM/CBED 20
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED 20
Damage and recovery in doped SOI layers after high energy implantation 20
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 20
Transmission electron diffraction techniques for nm scale strain measurement in semiconductors 20
Determination of bulk mismatch values in heterostructures by TEM/CBED 20
Numerical analysis of the process-induced stresses in silicon microstructures: application to micromachined cantilever 19
ON THE EPITAXIAL RELATIONSHIPS OF TISI2 ON SILICON 19
On the assessment of local stress distributions in integrated circuits 19
Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by TEM methods 19
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 18
La microanalisi a Raggi X in microscopia elettronica TEM e SEM 17
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 16
Totale 2.236
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Categoria #
all - tutte 8.207
article - articoli 5.980
book - libri 86
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 424
Totale 14.697
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202414 0 0 0 0 0 0 0 0 3 0 11 0
2024/2025930 3 5 73 39 197 66 2 36 2 82 243 182
2025/20261.292 76 146 127 246 262 38 181 85 66 47 18 0
Totale 2.236