CNR Institutional Research Information System

ARMIGLIATO, ALDO
 Distribuzione geografica
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Continente #
AS - Asia 1.260
NA - Nord America 805
EU - Europa 282
SA - Sud America 244
AF - Africa 16
OC - Oceania 1
Continente sconosciuto - Info sul continente non disponibili 0
Totale 2.608
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Nazione #
US - Stati Uniti d'America 755
SG - Singapore 552
CN - Cina 303
BR - Brasile 175
VN - Vietnam 144
HK - Hong Kong 109
FR - Francia 88
NL - Olanda 77
KR - Corea 53
IT - Italia 45
AR - Argentina 25
ID - Indonesia 17
CA - Canada 15
FI - Finlandia 14
JP - Giappone 14
MX - Messico 14
BD - Bangladesh 13
GB - Regno Unito 13
EC - Ecuador 12
IN - India 12
VE - Venezuela 12
CO - Colombia 10
ES - Italia 7
ZA - Sudafrica 7
DE - Germania 6
HN - Honduras 6
IL - Israele 6
PL - Polonia 6
CR - Costa Rica 5
JM - Giamaica 5
MY - Malesia 5
RU - Federazione Russa 5
SE - Svezia 5
TR - Turchia 5
PH - Filippine 4
PY - Paraguay 4
TH - Thailandia 4
UA - Ucraina 4
LB - Libano 3
NP - Nepal 3
BO - Bolivia 2
CL - Cile 2
DZ - Algeria 2
MA - Marocco 2
PE - Perù 2
PK - Pakistan 2
SA - Arabia Saudita 2
UZ - Uzbekistan 2
AL - Albania 1
AM - Armenia 1
AO - Angola 1
AT - Austria 1
BH - Bahrain 1
BS - Bahamas 1
BY - Bielorussia 1
EG - Egitto 1
GR - Grecia 1
HR - Croazia 1
IE - Irlanda 1
JO - Giordania 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
MD - Moldavia 1
MZ - Mozambico 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
OM - Oman 1
PR - Porto Rico 1
PT - Portogallo 1
RO - Romania 1
RS - Serbia 1
RW - Ruanda 1
SK - Slovacchia (Repubblica Slovacca) 1
TG - Togo 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
VI - Stati Uniti Isole Vergini 1
Totale 2.608
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Città #
Singapore 308
Santa Clara 260
San Jose 109
Hong Kong 105
Hefei 101
Beijing 82
Lauterbourg 64
Seoul 49
Ashburn 48
Ho Chi Minh City 48
Hanoi 21
Dallas 17
Los Angeles 15
Milan 12
Helsinki 11
Council Bluffs 10
São Paulo 10
New York 9
Haiphong 8
Porto Alegre 8
Rio de Janeiro 8
Buffalo 7
Minamishinagawa 7
Brooklyn 6
Quito 6
Tokyo 6
Atlanta 5
Da Nang 5
Elk Grove Village 5
Fort Worth 5
Phoenix 5
Americana 4
Buenos Aires 4
Bắc Giang 4
Chennai 4
Chicago 4
Hải Dương 4
Kingston 4
Toronto 4
Wroclaw 4
Bandung 3
Biên Hòa 3
Can Tho 3
Curitiba 3
Guangzhou 3
Guayaquil 3
Houston 3
Louisville 3
Madrid 3
Marseille 3
Naples 3
Ninh Bình 3
Orem 3
Philadelphia 3
Piscataway 3
Rome 3
Roubaix 3
Salvador 3
The Bronx 3
Thái Nguyên 3
Turku 3
Vĩnh Long 3
Washington 3
Albany 2
Albuquerque 2
Amery 2
Asunción 2
Belo Horizonte 2
Bengaluru 2
Benito Juarez 2
Bexley 2
Boise 2
Bologna 2
Brasília 2
Cape Coral 2
Caracas 2
Cary 2
Chengdu 2
Chester 2
Chongqing 2
Contagem 2
Coro 2
Curvelo 2
Cà Mau 2
Denver 2
Durban 2
East Stroudsburg 2
Florissant 2
Fortaleza 2
Frankfurt am Main 2
Gangnam-gu 2
Guadalupe 2
Guarulhos 2
Harrison 2
Hemet 2
Hà Tĩnh 2
Istanbul 2
Jackson 2
Jakarta 2
Johannesburg 2
Totale 1.539
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Nome #
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 73
Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation as interlayer between WC-Co hard metals and CVD diamond films 68
Modern developments and applications in microbeam analysis. Proceedings of the 9(th) Workshop of the European Microbeam Analysis Society (EMAS) and the 3(rd) Meeting of the International Union of Microbeam Analysis Societies (IUMAS), Florence, Italy, May 61
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures 60
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices 60
Stress engineering in Si based micro structures using technology computer-aided design 60
Application of the parametric bootstrap method to determine statistical errors in quantitative X-ray microanalysis of thin films 57
Quantitative strain mapping in nanoelectronic silicon devices by convergent beam electron diffraction 53
Split HOLZ lines analysis as a tool to map the strain field in patterned nanostructure 51
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 51
Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry 49
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 48
Diaframma per microscopio elettronico e procedimento per realizzare tale diaframma 46
X-Ray Microanalysis Combined with Monte Carlo Simulation for the Analysis of Layered Thin Films: The Case of Carbon Contamination 45
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 45
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 44
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films 44
HOLZ Line Splitting coupled to a Recursive Procedure. A Tool for the Displacement Field Determination in Nanostructures 41
Dislocation generation in device fabrication process 40
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 40
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 39
Lattice strain and static disorder determination in Si/Si_ {1-x} Ge_ {x}/Si heterostructures by convergent beam electron diffraction 38
DEPTH PROFILES AND DAMAGE ANNEALING OF 1.06-MEV AS-2+ IMPLANTED IN SILICON 37
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 37
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures 37
Presentazione orale 36
Strain measurements in thin film structures by convergent beam electron diffraction 36
Structural and analytical characterization of Si1-xGex heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double X-ray diffractometry 35
Quantitative X-ray microanalysis of thin NiO films by Monte Carlo and Cliff-Lorimer methods 35
Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations. 35
MIcrochimica Acta: Proceedings of the 9th Workshop of European Microbean analysis Society (EMAS) and the 3rd Meeting og the International Union of Microbean Analysis Societies (IUMAS), Florence, Italy, may 22-26, 2005 35
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 34
Strain analysis of deep sub-micron CMOS devices by TEM/CBED in the < 230 > zone axis 34
Analytical electron microscopy of Si 1- x Ge x/Si heterostructures and local isolation structures 33
Strain determination in submicron isolation structures by TEM/CBED 33
Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns 33
Nano beam and convergent beam elecron diffraction for strain anaysis in nano-electronics 33
Microanalisi a Raggi X e microdiffrazione a fascio convergente: applicazioni al silicio 31
FIB Preparation of a NiO Wedge-Lamella and STEM X-Ray Microanalysis for the Determination of the Experimental k(O-Ni) Cliff-Lorimer Coefficient 31
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process, simulation, and micro-Raman spectroscopy 31
Quantitative thin-film X-ray microanalysis by STEM/HAADF: Statistical analysis for precision and accuracy determination 31
On the strain determination in cross-sectioned heterostructures by TEM/LACBED 30
Damage and recovery in boron doped SOI layers after high energy implantation 29
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 29
TEM/CBED determination of strain in silicon-based submicrometric electronic devices 29
Analysis of localised strains in crystals by convergent beam electron diffraction 29
On the Spatial Resolution in Analytical Electron Microscopy 28
The nature of electrically inactive antimony in silicon 28
Microanalisi a raggi X e microdiffrazione a fascio convergente:applicazioni al Silicio 27
Strain analysis in submicron electron devices by convergent beam electron diffraction 27
Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction 27
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED 26
ON THE EPITAXIAL RELATIONSHIPS OF TISI2 ON SILICON 26
Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy 26
Strain analysis in sub-micron silicon devices by TEM/CBED 25
Damage and recovery in doped SOI layers after high energy implantation 25
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED 25
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 25
Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction 25
Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray microdiffraction and modeling 24
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 24
Numerical analysis of the process-induced stresses in silicon microstructures: application to micromachined cantilever 24
On the assessment of local stress distributions in integrated circuits 24
Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements 24
Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction 23
Planar defects and misfit dislocations in (001) GaAs/Ge heterostructures MOCVD grown with different V/III ratio 23
Damage and recovery in doped SOI layers after high energy implantation 22
Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by TEM methods 22
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 22
Transmission electron diffraction techniques for nm scale strain measurement in semiconductors 22
Determination of bulk mismatch values in heterostructures by TEM/CBED 22
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 21
La microanalisi a Raggi X in microscopia elettronica TEM e SEM 20
Totale 2.608
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Categoria #
all - tutte 10.125
article - articoli 7.390
book - libri 108
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 523
Totale 18.146
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202414 0 0 0 0 0 0 0 0 3 0 11 0
2024/2025930 3 5 73 39 197 66 2 36 2 82 243 182
2025/20261.340 76 146 127 246 262 38 181 85 66 47 19 47
2026/2027324 88 64 172 0 0 0 0 0 0 0 0 0
Totale 2.608