WIEMER, CLAUDIA
 Distribuzione geografica
Continente #
AS - Asia 4.001
NA - Nord America 1.727
SA - Sud America 771
EU - Europa 739
AF - Africa 55
OC - Oceania 4
Totale 7.297
Nazione #
SG - Singapore 1.737
US - Stati Uniti d'America 1.654
CN - Cina 947
BR - Brasile 630
HK - Hong Kong 431
VN - Vietnam 349
FR - Francia 235
KR - Corea 206
NL - Olanda 112
IT - Italia 110
JP - Giappone 64
IN - India 61
AR - Argentina 60
DE - Germania 57
GB - Regno Unito 49
FI - Finlandia 43
BD - Bangladesh 39
IL - Israele 31
MX - Messico 24
CA - Canada 23
ID - Indonesia 21
CO - Colombia 20
ES - Italia 17
EC - Ecuador 16
ZA - Sudafrica 16
AT - Austria 15
RU - Federazione Russa 15
IQ - Iraq 14
MA - Marocco 13
PL - Polonia 12
PY - Paraguay 12
UZ - Uzbekistan 12
IE - Irlanda 11
SE - Svezia 11
TR - Turchia 11
UA - Ucraina 10
PE - Perù 9
PK - Pakistan 9
VE - Venezuela 9
CZ - Repubblica Ceca 8
EG - Egitto 8
SA - Arabia Saudita 8
CL - Cile 7
UY - Uruguay 6
AE - Emirati Arabi Uniti 5
KZ - Kazakistan 5
MY - Malesia 5
TW - Taiwan 5
AU - Australia 4
GR - Grecia 4
JM - Giamaica 4
JO - Giordania 4
LB - Libano 4
NP - Nepal 4
SV - El Salvador 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BH - Bahrain 3
DK - Danimarca 3
LT - Lituania 3
MM - Myanmar 3
OM - Oman 3
PA - Panama 3
PH - Filippine 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
SY - Repubblica araba siriana 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
AM - Armenia 2
BE - Belgio 2
BY - Bielorussia 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
HN - Honduras 2
HR - Croazia 2
KE - Kenya 2
KG - Kirghizistan 2
LK - Sri Lanka 2
PR - Porto Rico 2
SN - Senegal 2
TH - Thailandia 2
AL - Albania 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BO - Bolivia 1
BS - Bahamas 1
BW - Botswana 1
CI - Costa d'Avorio 1
DZ - Algeria 1
GM - Gambi 1
GT - Guatemala 1
GY - Guiana 1
HU - Ungheria 1
IR - Iran 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
LY - Libia 1
Totale 7.287
Città #
Singapore 1.079
Santa Clara 529
Hong Kong 420
Hefei 405
San Jose 243
Ashburn 204
Seoul 194
Lauterbourg 193
Beijing 147
Ho Chi Minh City 131
Hanoi 82
São Paulo 59
Los Angeles 56
New York 41
Tokyo 37
Guangzhou 35
Buffalo 32
Dallas 32
Minamishinagawa 24
Rio de Janeiro 24
Rome 24
Haiphong 20
Bologna 18
Bengaluru 17
Helsinki 17
Nuremberg 16
Orem 16
Turku 15
Belo Horizonte 14
Da Nang 14
Denver 12
Frankfurt am Main 12
Shanghai 12
Atlanta 11
Baghdad 11
Brooklyn 11
Dublin 11
Tashkent 11
Brasília 10
Campinas 10
Chicago 10
Curitiba 10
Düsseldorf 10
Lappeenranta 10
Vienna 10
Biên Hòa 9
Bắc Ninh 9
Dhaka 9
Milan 9
Johannesburg 8
London 8
Munich 8
Warsaw 8
Boardman 7
Fortaleza 7
Montreal 7
Ribeirão Preto 7
Bogotá 6
Cairo 6
City of London 6
Goiânia 6
Ha Long 6
Hangzhou 6
Lima 6
New Delhi 6
Phoenix 6
Porto Alegre 6
Potenza 6
Quito 6
Stockholm 6
Tel Aviv 6
The Dalles 6
Thái Bình 6
Buenos Aires 5
Carapicuíba 5
Hải Dương 5
Montevideo 5
Paris 5
Amman 4
Amsterdam 4
Baltimore 4
Belford Roxo 4
Bragança Paulista 4
Casablanca 4
Changsha 4
Council Bluffs 4
Detroit 4
Elk Grove Village 4
Formosa 4
Guayaquil 4
Imperatriz 4
Istanbul 4
Juiz de Fora 4
Kingston 4
Lahore 4
Manaus 4
Marseille 4
Naples 4
Ninh Bình 4
Piracicaba 4
Totale 4.604
Nome #
Influence of Metal Interlayers on Spin-Charge Conversion in Sb2Te3 Topological Insulator-Based Devices 117
Sequential Infiltration Synthesis of Al2O3 in PMMA Thin Films: Temperature Investigation by Operando Spectroscopic Ellipsometry 101
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films 97
Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition 88
Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition 82
D 2.4 XRR and XRD evaluation of N-M-N structures as trapping layers for innovative memory devices 78
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 72
Mocvd growth of gete/sb2 te3 core–shell nanowires 71
Update on synchrotron radiation TXRF: New results 70
Simulation of micro-mirrors for optical MEMS 69
Ultraviolet optical near-fields of microspheres imprinted in phase change films 68
Improving HfO2-Based Resistive Switching Devices by Inserting a TaOxThin Film via Engineered In Situ Oxidation 67
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process 66
Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells 64
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 64
Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD 64
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 63
Effects of growth temperature on the properties of HfO~ 2 films grown by atomic layer deposition 62
Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack 62
Characterization of biodegradable polybutylene succinate modified by sequential infiltration of Al2O3 61
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 61
Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories 60
Fe/Sb(2)Te(3)Interface Reconstruction through Mild Thermal Annealing 59
Large-Area MOVPE Growth of Topological Insulator Bi2Te3Epitaxial Layers on i-Si(111) 59
MDM-Numonyx-2009-D6-XRR evaluation of ON and ONO structures- mid term report 58
Al2O3 growth in PMMA thin films by sequential infiltration synthesis: in situ thickness evolution and mass uptake investigation 57
Sequential Infiltration Synthesis of Al2O3in Biodegradable Polybutylene Succinate: Characterization of the Infiltration Mechanism 55
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 54
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process 52
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 52
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires 52
CHEMAPH-2007-P2 periodic activity report 51
Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) 51
Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis 51
MDM-ST-2005-D15-Investigation of copper barrier efficiency with selected low-k dielectrics. 50
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 50
MDM-Numonyx-2009-D10-XRR and XRD evaluation of LaHfO demo material for blocking oxide application 49
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applications 49
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 48
Brush Layers of Bioinspired Polypeptoids for Deterministic Doping of Semiconductors 48
Structural and Electrical Properties of ALD Deposited Er-HfO2 for Gate Dielectric 47
Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si 47
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 46
Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate 45
Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films 44
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 44
Electronic states and mechanical properties in transition metal nitrides 43
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 43
Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications 42
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 42
MOCVD growth and structural characterization of In-Sb-Te nanowires 42
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si 41
MOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowires 41
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 41
MDM-ST-2004-D1-Growth of Hf aluminated produced by Atomic Layer Deposition using alternative precursors 40
Electronic properties of crystalline Ge1-xSbxTey thin films 40
THERMAL PROPERTIES MEASUREMENTS OF PHASE-CHANGE ALLOYS WITHIN THE CONFIGURATION OF NANOSTRUCTURES AND DEVICES 40
High-Density Sb2Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth 40
O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates 39
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD 39
Photothermal Radiometry applied in nanoliter melted Tellurium alloys 39
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films 38
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 38
CHEMAPH-2007-Periodic activity report 38
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 37
Ru and RuO(2) gate electrodes for advanced CMOS technology 36
Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD 36
Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 36
Ru and RuO2 electrodes for advanced CMOS technology 36
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 35
Ozone-Based Atomic Layer Deposition of Alumina fromTMA: Growth, Morphology, and Reaction Mechanism 35
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 35
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires 35
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition 35
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 34
Evolution of crystallographic ordering in Hf1-xAlxOy high-k dielectric deposited by atomic layer deposition 34
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 33
X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition 33
Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs 33
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3ÕSi Interfaces for Advanced Gate Stacks 33
A Novel Sb2Te3 Polymorph Stable at the Nanoscale 33
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 33
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 33
Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates 33
thermal properties of In-Sb-Te thin films for phase change memory application 33
Electrical characterization of rare earth oxides grown by atomic layer deposition 33
Review Article: Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD" 32
Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation 32
Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material 31
Trends of structural and electrical properties in atomic layer deposited HfO2 films 31
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory 31
Interface Study in a "Metal/High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide 30
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications 30
Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks 30
INVEST-2004-D19-Physical & Chemical characterization results 29
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 29
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 29
High-k materials in FLASH memories 29
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 29
An accurate low-frequency model for the 3 omega method 29
Totale 4.726
Categoria #
all - tutte 25.951
article - articoli 18.026
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 225
Totale 44.202


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 5 0 64 5
2024/20252.744 20 18 202 122 436 130 58 96 82 143 794 643
2025/20264.546 258 517 449 738 840 157 722 240 200 202 127 96
Totale 7.364