WIEMER, CLAUDIA
 Distribuzione geografica
Continente #
AS - Asia 4.080
NA - Nord America 2.490
SA - Sud America 832
EU - Europa 803
Continente sconosciuto - Info sul continente non disponibili 67
AF - Africa 58
OC - Oceania 4
Totale 8.334
Nazione #
US - Stati Uniti d'America 2.376
SG - Singapore 1.739
CN - Cina 951
BR - Brasile 652
HK - Hong Kong 432
VN - Vietnam 357
FR - Francia 235
KR - Corea 206
IT - Italia 151
NL - Olanda 112
JP - Giappone 67
AR - Argentina 65
BD - Bangladesh 63
IN - India 62
DE - Germania 58
GB - Regno Unito 58
FI - Finlandia 43
CO - Colombia 36
CA - Canada 33
ID - Indonesia 32
IL - Israele 31
MX - Messico 29
EC - Ecuador 25
ES - Italia 19
IQ - Iraq 16
RU - Federazione Russa 16
ZA - Sudafrica 16
AT - Austria 15
VE - Venezuela 15
UA - Ucraina 14
MA - Marocco 13
TR - Turchia 13
PL - Polonia 12
PY - Paraguay 12
UZ - Uzbekistan 12
IE - Irlanda 11
SA - Arabia Saudita 11
SE - Svezia 11
CR - Costa Rica 10
JM - Giamaica 9
PE - Perù 9
PH - Filippine 9
PK - Pakistan 9
CL - Cile 8
CZ - Repubblica Ceca 8
EG - Egitto 8
MY - Malesia 8
NP - Nepal 8
AE - Emirati Arabi Uniti 6
NI - Nicaragua 6
TW - Taiwan 6
UY - Uruguay 6
KZ - Kazakistan 5
SV - El Salvador 5
TN - Tunisia 5
TT - Trinidad e Tobago 5
AU - Australia 4
BG - Bulgaria 4
GR - Grecia 4
JO - Giordania 4
LB - Libano 4
PA - Panama 4
AM - Armenia 3
BA - Bosnia-Erzegovina 3
BE - Belgio 3
BH - Bahrain 3
DK - Danimarca 3
GT - Guatemala 3
HN - Honduras 3
LT - Lituania 3
MM - Myanmar 3
OM - Oman 3
RO - Romania 3
SK - Slovacchia (Repubblica Slovacca) 3
SY - Repubblica araba siriana 3
TH - Thailandia 3
AL - Albania 2
BO - Bolivia 2
BY - Bielorussia 2
DO - Repubblica Dominicana 2
EE - Estonia 2
ET - Etiopia 2
HR - Croazia 2
KE - Kenya 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
PR - Porto Rico 2
SN - Senegal 2
AZ - Azerbaigian 1
BF - Burkina Faso 1
BS - Bahamas 1
BW - Botswana 1
CI - Costa d'Avorio 1
DZ - Algeria 1
GM - Gambi 1
GY - Guiana 1
HU - Ungheria 1
IR - Iran 1
KH - Cambogia 1
Totale 8.252
Città #
Singapore 1.080
Santa Clara 540
Hong Kong 420
Hefei 405
San Jose 315
Ashburn 257
Seoul 194
Lauterbourg 193
Beijing 148
Ho Chi Minh City 134
Hanoi 84
Los Angeles 61
São Paulo 59
New York 49
Tokyo 38
Buffalo 36
Dallas 36
Guangzhou 35
Rome 28
Rio de Janeiro 26
Council Bluffs 24
Minamishinagawa 24
Chicago 23
Brasília 20
Haiphong 20
Bologna 19
Bengaluru 17
Brooklyn 17
Helsinki 17
Atlanta 16
Denver 16
Nuremberg 16
Orem 16
Belo Horizonte 15
Milan 15
Turku 15
Da Nang 14
Dublin 13
Bogotá 12
Frankfurt am Main 12
Las Vegas 12
Shanghai 12
Baghdad 11
Curitiba 11
Dhaka 11
Philadelphia 11
Tashkent 11
Campinas 10
Düsseldorf 10
Houston 10
Lappeenranta 10
Phoenix 10
San Antonio 10
Vienna 10
Biên Hòa 9
Bắc Ninh 9
Kingston 9
Miami 9
Queens 9
Quito 9
Baltimore 8
Charlotte 8
Johannesburg 8
London 8
Munich 8
The Bronx 8
Warsaw 8
Boardman 7
Boston 7
Detroit 7
Fortaleza 7
Montreal 7
Newark 7
Ribeirão Preto 7
San José 7
Birmingham 6
Buenos Aires 6
Cairo 6
City of London 6
Goiânia 6
Guayaquil 6
Ha Long 6
Hangzhou 6
Lima 6
New Delhi 6
New Orleans 6
Piscataway 6
Porto Alegre 6
Potenza 6
Stockholm 6
Tel Aviv 6
The Dalles 6
Thái Bình 6
Caracas 5
Carapicuíba 5
Cleveland 5
Columbia 5
Columbus 5
Durham 5
Hải Dương 5
Totale 4.937
Nome #
Influence of Metal Interlayers on Spin-Charge Conversion in Sb2Te3 Topological Insulator-Based Devices 125
Sequential Infiltration Synthesis of Al2O3 in PMMA Thin Films: Temperature Investigation by Operando Spectroscopic Ellipsometry 102
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films 102
Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition 95
Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition 90
D 2.4 XRR and XRD evaluation of N-M-N structures as trapping layers for innovative memory devices 85
Mocvd growth of gete/sb2 te3 core–shell nanowires 84
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon 78
Update on synchrotron radiation TXRF: New results 77
Simulation of micro-mirrors for optical MEMS 74
Improving HfO2-Based Resistive Switching Devices by Inserting a TaOxThin Film via Engineered In Situ Oxidation 73
Ultraviolet optical near-fields of microspheres imprinted in phase change films 72
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process 72
Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition 71
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator 70
Characterization of biodegradable polybutylene succinate modified by sequential infiltration of Al2O3 70
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 69
Large-Area MOVPE Growth of Topological Insulator Bi2Te3Epitaxial Layers on i-Si(111) 67
Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack 66
Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells 66
Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories 66
Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD 66
Effects of growth temperature on the properties of HfO~ 2 films grown by atomic layer deposition 65
Fe/Sb(2)Te(3)Interface Reconstruction through Mild Thermal Annealing 65
MDM-Numonyx-2009-D6-XRR evaluation of ON and ONO structures- mid term report 63
Al2O3 growth in PMMA thin films by sequential infiltration synthesis: in situ thickness evolution and mass uptake investigation 63
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires 61
Sequential Infiltration Synthesis of Al2O3in Biodegradable Polybutylene Succinate: Characterization of the Infiltration Mechanism 59
In-doped Sb nanowires grown by MOCVD for high speed phase change memories 59
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires 58
Brush Layers of Bioinspired Polypeptoids for Deterministic Doping of Semiconductors 58
Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis 57
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 57
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process 56
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applications 56
MDM-ST-2005-D15-Investigation of copper barrier efficiency with selected low-k dielectrics. 55
CHEMAPH-2007-P2 periodic activity report 55
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 55
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 54
Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) 53
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface 53
MDM-Numonyx-2009-D10-XRR and XRD evaluation of LaHfO demo material for blocking oxide application 52
Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films 52
Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications 51
Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si 50
MOCVD growth and structural characterization of In-Sb-Te nanowires 50
Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate 50
Structural and Electrical Properties of ALD Deposited Er-HfO2 for Gate Dielectric 48
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si 48
Electronic properties of crystalline Ge1-xSbxTey thin films 46
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 46
Electronic states and mechanical properties in transition metal nitrides 45
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 45
Single-step Au-catalysed synthesis and microstructural characterization of core-shell Ge/In-Te nanowires by MOCVD 45
Ozone-Based Atomic Layer Deposition of Alumina fromTMA: Growth, Morphology, and Reaction Mechanism 45
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 45
MDM-ST-2004-D1-Growth of Hf aluminated produced by Atomic Layer Deposition using alternative precursors 44
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films 44
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD 44
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires 44
CHEMAPH-2007-Periodic activity report 44
MOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowires 44
Photothermal Radiometry applied in nanoliter melted Tellurium alloys 44
THERMAL PROPERTIES MEASUREMENTS OF PHASE-CHANGE ALLOYS WITHIN THE CONFIGURATION OF NANOSTRUCTURES AND DEVICES 44
O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates 43
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 43
Ru and RuO(2) gate electrodes for advanced CMOS technology 43
High-Density Sb2Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth 43
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 42
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 42
Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 41
Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation 41
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 40
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition 40
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 39
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 39
X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition 38
Evolution of crystallographic ordering in Hf1-xAlxOy high-k dielectric deposited by atomic layer deposition 38
A Novel Sb2Te3 Polymorph Stable at the Nanoscale 38
Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates 38
Ru and RuO2 electrodes for advanced CMOS technology 38
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 37
Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3ÕSi Interfaces for Advanced Gate Stacks 37
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires 37
Dynamics of laser-induced phase switching in GeTe films 37
thermal properties of In-Sb-Te thin films for phase change memory application 37
Electrical characterization of rare earth oxides grown by atomic layer deposition 37
INVEST-2004-D19-Physical & Chemical characterization results 36
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 36
Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs 36
Rare earth-based high-k materials for non-volatile memory applications 36
Interface Study in a "Metal/High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide 35
Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVD 35
Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks 35
Review Article: Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD" 34
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 34
Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates 34
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition 33
Trends of structural and electrical properties in atomic layer deposited HfO2 films 33
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications 33
Totale 5.270
Categoria #
all - tutte 30.382
article - articoli 21.127
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 266
Totale 51.775


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 5 0 64 5
2024/20252.744 20 18 202 122 436 130 58 96 82 143 794 643
2025/20264.551 258 517 449 738 840 157 722 240 200 202 127 101
2026/2027965 207 207 551 0 0 0 0 0 0 0 0 0
Totale 8.334