CNR Institutional Research Information System

BALBONI, ROBERTO
 Distribuzione geografica
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Continente #
AS - Asia 1.897
NA - Nord America 1.556
EU - Europa 425
SA - Sud America 323
AF - Africa 30
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 3
Totale 4.248
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Nazione #
US - Stati Uniti d'America 1.469
SG - Singapore 748
CN - Cina 526
BR - Brasile 243
VN - Vietnam 179
HK - Hong Kong 157
IT - Italia 118
KR - Corea 104
FR - Francia 94
NL - Olanda 69
GB - Regno Unito 35
AR - Argentina 34
CA - Canada 34
JP - Giappone 30
IN - India 29
BD - Bangladesh 20
DE - Germania 19
ID - Indonesia 18
MX - Messico 17
FI - Finlandia 15
IL - Israele 14
CO - Colombia 13
TR - Turchia 13
ES - Italia 12
CR - Costa Rica 10
EC - Ecuador 10
HN - Honduras 10
RU - Federazione Russa 10
VE - Venezuela 10
ZA - Sudafrica 10
IQ - Iraq 8
BE - Belgio 7
HU - Ungheria 7
MA - Marocco 7
PL - Polonia 7
MY - Malesia 6
TH - Thailandia 6
JM - Giamaica 5
KZ - Kazakistan 5
NP - Nepal 5
PY - Paraguay 5
UA - Ucraina 5
AE - Emirati Arabi Uniti 4
IE - Irlanda 4
JO - Giordania 4
PE - Perù 4
PH - Filippine 4
SA - Arabia Saudita 4
TT - Trinidad e Tobago 4
BG - Bulgaria 3
CL - Cile 3
EE - Estonia 3
LT - Lituania 3
SE - Svezia 3
AT - Austria 2
DZ - Algeria 2
EG - Egitto 2
ET - Etiopia 2
GT - Guatemala 2
LB - Libano 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
SV - El Salvador 2
TW - Taiwan 2
AL - Albania 1
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
BW - Botswana 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CV - Capo Verde 1
GR - Grecia 1
HR - Croazia 1
KE - Kenya 1
KG - Kirghizistan 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
OM - Oman 1
PT - Portogallo 1
RS - Serbia 1
RW - Ruanda 1
SK - Slovacchia (Repubblica Slovacca) 1
TG - Togo 1
TN - Tunisia 1
UY - Uruguay 1
UZ - Uzbekistan 1
VI - Stati Uniti Isole Vergini 1
Totale 4.234
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Città #
Singapore 436
Santa Clara 352
Hefei 227
San Jose 173
Hong Kong 153
Beijing 115
Council Bluffs 103
Seoul 103
Ashburn 99
Lauterbourg 79
Dallas 72
Ho Chi Minh City 51
Los Angeles 43
Hanoi 40
Bologna 35
New York 27
São Paulo 19
Minamishinagawa 15
Helsinki 14
Abbeville 13
Frankfurt am Main 12
Tokyo 12
Toronto 11
Orem 10
Porto Alegre 10
Princeton 10
Rio de Janeiro 10
Amsterdam 9
Brooklyn 9
Buffalo 9
Da Nang 9
Haiphong 9
Atlanta 8
Bengaluru 8
Chicago 7
Guangzhou 7
Milan 7
Montreal 7
Phoenix 7
Poplar 7
Brasília 6
Brussels 6
Fort Worth 6
Fortaleza 6
Hải Dương 6
Johannesburg 6
Salvador 6
Taranto 6
Warsaw 6
Ankara 5
Budapest 5
Can Tho 5
Chennai 5
Curitiba 5
Guayaquil 5
Houston 5
Quận Bình Thạnh 5
The Bronx 5
Amman 4
Baghdad 4
Biên Hòa 4
Bogotá 4
Bắc Giang 4
Caxias do Sul 4
Denver 4
Dubai 4
Elk Grove Village 4
Florence 4
Lima 4
Manchester 4
Miami 4
Mumbai 4
Nuremberg 4
Quito 4
Quận Bảy 4
Reggio Emilia 4
San José 4
San Pedro Sula 4
Thái Nguyên 4
Agadir 3
Almaty 3
Americana 3
Asunción 3
Bangkok 3
Betim 3
Buenos Aires 3
Bình Dương 3
Canoas 3
Charlotte 3
Detroit 3
Dublin 3
Durban 3
Guadalupe 3
Heredia 3
Istanbul 3
Kingston 3
Las Vegas 3
London 3
Memphis 3
Modena 3
Totale 2.593
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Nome #
On the accuracy of strain measurements by different TEM techniques 165
Theoretical and practical aspects of the design and production of synthetic holograms for transmission electron microscopy 128
TEM strain measurement methods on SiGe/Si films for accuracy tests 108
Holograms for the Generation of Vortex States with L= 500h Fabricated by Electron Beam Lithography 80
On the role of the static Debye-Waller factor in X-ray rocking curve analysis 79
Electron holograms encoding amplitude and phase for the generation of arbitrary wavefunctions 79
Comitato Scientifico Mostra: NANOMONDO Viaggio nel mondo fino alla -9, Museo di Storia Naturale di Ferrara 76
The problem of convolution in the simulation of multicrystal X-ray rocking curves of semiconductor materials 72
Experiments and Potentialities for the use of Bessel Beam in Superresolution STEM 72
In ricordo del Prof. Ugo Valdrè 72
Measuring the orbital angular momentum spectrum of an electron beam 68
Challenging Point Scanning across Electron Microscopy and Optical Imaging using Computational Imaging 67
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures 62
Observation of nanoscale magnetic fields using twisted electron beams 62
Recrystallization of strained GexSi1-x/Si layers with various Ge gradients and in the presence of impurities 61
Application of the parametric bootstrap method to determine statistical errors in quantitative X-ray microanalysis of thin films 59
Quantitative strain mapping in nanoelectronic silicon devices by convergent beam electron diffraction 58
Synthesis and characterization of PMMA/silylated MMTs 56
Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography 55
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 54
On the darkening of secondary electron images of YBa2Cu3O7-x superconductors at the onset of the superconducting phase transition 53
Split HOLZ lines analysis as a tool to map the strain field in patterned nanostructure 53
Phase retrieval of an electron vortex beam using diffraction holography 53
Innovative Phase Plates for Beam Shaping 53
Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry 52
Lattice deformations in strained-silicon rib structures for photonic devices 51
Generation and application of bessel beams in electron microscopy 51
Local epitaxy from the silicon substrate in silicon-rich SiC during Si-nanocrystals formation 50
Challenges and progress toward a silicon-based multi-microring optical network-on-chip 46
Towards a holographic approach to spherical aberration correction in scanning transmission electron microscopy 45
HOLZ Line Splitting coupled to a Recursive Procedure. A Tool for the Displacement Field Determination in Nanostructures 44
Dislocation generation in device fabrication process 42
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 42
Lattice strain and static disorder determination in Si/Si_ {1-x} Ge_ {x}/Si heterostructures by convergent beam electron diffraction 41
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 41
Study of induced strain in silicon rib structures 41
Early detection of the metallization quality using moderately accelerated electromigration stress conditions 40
Are high resolution resistometric methods really useful for the early detection of electromigration damage? 40
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 39
Strain measurements in thin film structures by convergent beam electron diffraction 39
Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction 39
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures 39
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 38
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines 38
Structural and analytical characterization of Si1-xGex heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double X-ray diffractometry 38
Strain analysis of deep sub-micron CMOS devices by TEM/CBED in the < 230 > zone axis 37
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx 37
Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns 36
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 36
Strain determination by CBED in Si-rib structures for photonic devices 36
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process, simulation, and micro-Raman spectroscopy 36
Analytical electron microscopy of Si 1- x Ge x/Si heterostructures and local isolation structures 35
A comparison between normally and highly accelerated electromigration tests 35
Nano beam and convergent beam elecron diffraction for strain anaysis in nano-electronics 35
Wavy growth onset in strain-balanced InGaAs multi-quantum wells 35
Structured Electron Beam Illumination: A New Control Over the Electron Probe Weird Probes and New Experiments 35
Strain determination in submicron isolation structures by TEM/CBED 34
Quantum effects in silicon for photovoltaic applications 34
Microanalisi a Raggi X e microdiffrazione a fascio convergente: applicazioni al silicio 34
Quantitative thin-film X-ray microanalysis by STEM/HAADF: Statistical analysis for precision and accuracy determination 34
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 33
Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon 33
On the strain determination in cross-sectioned heterostructures by TEM/LACBED 32
Analysis of localised strains in crystals by convergent beam electron diffraction 32
Software CBED 32
ON THE WEAKENING OF SECONDARY-ELECTRON IMAGE BRIGHTNESS IN YBA2CU3O7-X 31
Structural analysis and depth profiling of nanometric SiO2/SRO multilayers 31
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 31
A compositional TEM study of TiSi2 metal layers deposited on silicon 31
TEM/CBED determination of strain in silicon-based submicrometric electronic devices 31
Strain analysis in submicron electron devices by convergent beam electron diffraction 30
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 30
On the Spatial Resolution in Analytical Electron Microscopy 29
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED 29
Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction 29
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 28
Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction 28
Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon 28
Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy 28
Hydrogen precipitation in highly oversaturated single-crystalline silicon 28
Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray microdiffraction and modeling 27
Strain analysis in sub-micron silicon devices by TEM/CBED 27
X-Ray emission modulation by electron channelling and site occupancy in garnets 27
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED 27
Growth and characterization of Si nanodot multilayers in SiC matrix 26
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 26
On the assessment of local stress distributions in integrated circuits 26
Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements 26
Transmission electron diffraction techniques for nm scale strain measurement in semiconductors 26
CBED investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures 26
Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction 25
Determination of bulk mismatch values in heterostructures by TEM/CBED 25
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 24
Electron and ion beam analysis of composition and strain in Si-x Ge x/Si heterostructures 24
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 24
ASSESSMENT AND INTERPRETATION OF THE BRIGHTNESS CHANGE OF SECONDARY-ELECTRON IMAGES OF HIGH-TC SAMPLES THROUGH THE SUPERCONDUCTING TRANSITION 23
Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by TEM methods 23
Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction 22
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON 20
Totale 4.248
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Categoria #
all - tutte 15.123
article - articoli 11.675
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 408
Totale 27.206
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202410 0 0 0 0 0 0 0 0 4 0 6 0
2024/20251.328 2 11 107 48 254 109 31 42 27 73 351 273
2025/20262.223 167 287 219 369 414 97 270 104 93 109 49 45
2026/2027687 116 78 244 249 0 0 0 0 0 0 0 0
Totale 4.248