CNR Institutional Research Information System

BALBONI, ROBERTO
 Distribuzione geografica
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Continente #
AS - Asia 1.861
NA - Nord America 932
EU - Europa 375
SA - Sud America 294
AF - Africa 30
OC - Oceania 3
Totale 3.495
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Nazione #
US - Stati Uniti d'America 882
SG - Singapore 747
CN - Cina 526
BR - Brasile 238
VN - Vietnam 177
HK - Hong Kong 157
KR - Corea 104
FR - Francia 92
IT - Italia 84
NL - Olanda 68
AR - Argentina 31
GB - Regno Unito 30
JP - Giappone 30
IN - India 29
CA - Canada 21
DE - Germania 17
FI - Finlandia 15
IL - Israele 14
MX - Messico 14
ID - Indonesia 13
ES - Italia 12
TR - Turchia 12
BD - Bangladesh 10
RU - Federazione Russa 10
ZA - Sudafrica 10
IQ - Iraq 8
HU - Ungheria 7
MA - Marocco 7
PL - Polonia 7
BE - Belgio 6
EC - Ecuador 6
HN - Honduras 5
PY - Paraguay 5
UA - Ucraina 5
AE - Emirati Arabi Uniti 4
CO - Colombia 4
IE - Irlanda 4
JO - Giordania 4
KZ - Kazakistan 4
NP - Nepal 4
SA - Arabia Saudita 4
VE - Venezuela 4
BG - Bulgaria 3
PE - Perù 3
SE - Svezia 3
TT - Trinidad e Tobago 3
AT - Austria 2
CL - Cile 2
CR - Costa Rica 2
DZ - Algeria 2
EG - Egitto 2
ET - Etiopia 2
JM - Giamaica 2
LT - Lituania 2
NZ - Nuova Zelanda 2
PH - Filippine 2
PK - Pakistan 2
TW - Taiwan 2
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
BW - Botswana 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CV - Capo Verde 1
EE - Estonia 1
GR - Grecia 1
HR - Croazia 1
KE - Kenya 1
KG - Kirghizistan 1
LV - Lettonia 1
MN - Mongolia 1
MY - Malesia 1
NO - Norvegia 1
OM - Oman 1
RS - Serbia 1
RW - Ruanda 1
SK - Slovacchia (Repubblica Slovacca) 1
TG - Togo 1
TH - Thailandia 1
TN - Tunisia 1
UY - Uruguay 1
UZ - Uzbekistan 1
VI - Stati Uniti Isole Vergini 1
Totale 3.495
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Città #
Singapore 435
Santa Clara 348
Hefei 227
Hong Kong 153
Beijing 115
San Jose 106
Seoul 103
Lauterbourg 79
Ashburn 67
Dallas 66
Ho Chi Minh City 51
Hanoi 38
Los Angeles 37
Bologna 35
New York 21
São Paulo 19
Minamishinagawa 15
Helsinki 14
Frankfurt am Main 12
Tokyo 12
Orem 10
Porto Alegre 10
Amsterdam 9
Da Nang 9
Haiphong 9
Rio de Janeiro 9
Bengaluru 8
Buffalo 8
Guangzhou 7
Montreal 7
Poplar 7
Brasília 6
Brussels 6
Hải Dương 6
Johannesburg 6
Salvador 6
Taranto 6
Warsaw 6
Ankara 5
Budapest 5
Can Tho 5
Chennai 5
Curitiba 5
Fortaleza 5
Houston 5
Quận Bình Thạnh 5
Amman 4
Baghdad 4
Biên Hòa 4
Bắc Giang 4
Caxias do Sul 4
Chicago 4
Denver 4
Dubai 4
Elk Grove Village 4
Florence 4
Guayaquil 4
Manchester 4
Mumbai 4
Nuremberg 4
Phoenix 4
Quận Bảy 4
Thái Nguyên 4
Agadir 3
Almaty 3
Americana 3
Asunción 3
Betim 3
Brooklyn 3
Buenos Aires 3
Bình Dương 3
Canoas 3
Dublin 3
Durban 3
Lima 3
London 3
Modena 3
New Delhi 3
Reggio Emilia 3
Seveso 3
Shanghai 3
Sumaré 3
Toronto 3
Vũng Tàu 3
Addis Ababa 2
Araruama 2
Araçatuba 2
Atlanta 2
Auckland 2
Belo Horizonte 2
Bexley 2
Boston 2
Cairo 2
Campo Grande 2
Carney 2
Caruaru 2
Chapecó 2
Charlotte 2
Chengdu 2
Chongqing 2
Totale 2.291
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Nome #
On the accuracy of strain measurements by different TEM techniques 151
Theoretical and practical aspects of the design and production of synthetic holograms for transmission electron microscopy 114
TEM strain measurement methods on SiGe/Si films for accuracy tests 91
On the role of the static Debye-Waller factor in X-ray rocking curve analysis 75
Holograms for the Generation of Vortex States with L= 500h Fabricated by Electron Beam Lithography 71
Electron holograms encoding amplitude and phase for the generation of arbitrary wavefunctions 71
The problem of convolution in the simulation of multicrystal X-ray rocking curves of semiconductor materials 65
Experiments and Potentialities for the use of Bessel Beam in Superresolution STEM 64
Comitato Scientifico Mostra: NANOMONDO Viaggio nel mondo fino alla -9, Museo di Storia Naturale di Ferrara 63
Measuring the orbital angular momentum spectrum of an electron beam 60
Challenging Point Scanning across Electron Microscopy and Optical Imaging using Computational Imaging 60
In ricordo del Prof. Ugo Valdrè 60
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures 54
Observation of nanoscale magnetic fields using twisted electron beams 54
Recrystallization of strained GexSi1-x/Si layers with various Ge gradients and in the presence of impurities 52
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 50
On the darkening of secondary electron images of YBa2Cu3O7-x superconductors at the onset of the superconducting phase transition 49
Quantitative strain mapping in nanoelectronic silicon devices by convergent beam electron diffraction 49
Split HOLZ lines analysis as a tool to map the strain field in patterned nanostructure 48
Synthesis and characterization of PMMA/silylated MMTs 47
Lattice deformations in strained-silicon rib structures for photonic devices 46
Phase retrieval of an electron vortex beam using diffraction holography 46
Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography 46
Local epitaxy from the silicon substrate in silicon-rich SiC during Si-nanocrystals formation 45
Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry 45
Innovative Phase Plates for Beam Shaping 45
Challenges and progress toward a silicon-based multi-microring optical network-on-chip 41
Application of the parametric bootstrap method to determine statistical errors in quantitative X-ray microanalysis of thin films 39
Towards a holographic approach to spherical aberration correction in scanning transmission electron microscopy 38
Generation and application of bessel beams in electron microscopy 38
Early detection of the metallization quality using moderately accelerated electromigration stress conditions 35
Are high resolution resistometric methods really useful for the early detection of electromigration damage? 35
HOLZ Line Splitting coupled to a Recursive Procedure. A Tool for the Displacement Field Determination in Nanostructures 35
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 34
Dislocation generation in device fabrication process 32
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines 32
Strain measurements in thin film structures by convergent beam electron diffraction 32
Analytical electron microscopy of Si 1- x Ge x/Si heterostructures and local isolation structures 31
Lattice strain and static disorder determination in Si/Si_ {1-x} Ge_ {x}/Si heterostructures by convergent beam electron diffraction 31
Nano beam and convergent beam elecron diffraction for strain anaysis in nano-electronics 31
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 31
Study of induced strain in silicon rib structures 31
Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures 31
A comparison between normally and highly accelerated electromigration tests 30
Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns 30
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 30
Wavy growth onset in strain-balanced InGaAs multi-quantum wells 30
Structured Electron Beam Illumination: A New Control Over the Electron Probe Weird Probes and New Experiments 30
Microanalisi a Raggi X e microdiffrazione a fascio convergente: applicazioni al silicio 29
Strain analysis of deep sub-micron CMOS devices by TEM/CBED in the < 230 > zone axis 29
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx 29
Strain determination by CBED in Si-rib structures for photonic devices 29
Strain determination in submicron isolation structures by TEM/CBED 28
A compositional TEM study of TiSi2 metal layers deposited on silicon 28
TEM/CBED determination of strain in silicon-based submicrometric electronic devices 28
Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction 28
On the Spatial Resolution in Analytical Electron Microscopy 27
Quantum effects in silicon for photovoltaic applications 27
On the strain determination in cross-sectioned heterostructures by TEM/LACBED 27
Structural and analytical characterization of Si1-xGex heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double X-ray diffractometry 27
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 26
Quantitative thin-film X-ray microanalysis by STEM/HAADF: Statistical analysis for precision and accuracy determination 26
Structural analysis and depth profiling of nanometric SiO2/SRO multilayers 25
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 24
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 24
Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon 24
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 24
Software CBED 24
ON THE WEAKENING OF SECONDARY-ELECTRON IMAGE BRIGHTNESS IN YBA2CU3O7-X 23
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED 23
Analysis of localised strains in crystals by convergent beam electron diffraction 23
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 23
Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon 23
Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements 23
Strain analysis in submicron electron devices by convergent beam electron diffraction 22
Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction 22
Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy 22
Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction 22
X-Ray emission modulation by electron channelling and site occupancy in garnets 21
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 21
Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction 21
Hydrogen precipitation in highly oversaturated single-crystalline silicon 21
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process, simulation, and micro-Raman spectroscopy 21
Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray microdiffraction and modeling 20
Strain analysis in sub-micron silicon devices by TEM/CBED 20
Growth and characterization of Si nanodot multilayers in SiC matrix 20
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED 20
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 20
Transmission electron diffraction techniques for nm scale strain measurement in semiconductors 20
Determination of bulk mismatch values in heterostructures by TEM/CBED 20
Electron and ion beam analysis of composition and strain in Si-x Ge x/Si heterostructures 19
On the assessment of local stress distributions in integrated circuits 19
Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by TEM methods 19
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 18
Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction 17
CBED investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures 17
ASSESSMENT AND INTERPRETATION OF THE BRIGHTNESS CHANGE OF SECONDARY-ELECTRON IMAGES OF HIGH-TC SAMPLES THROUGH THE SUPERCONDUCTING TRANSITION 16
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON 16
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 16
Totale 3.509
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Categoria #
all - tutte 11.868
article - articoli 9.148
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 315
Totale 21.331
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202410 0 0 0 0 0 0 0 0 4 0 6 0
2024/20251.328 2 11 107 48 254 109 31 42 27 73 351 273
2025/20262.171 167 287 219 369 414 97 270 104 93 109 42 0
Totale 3.509