CNR Institutional Research Information System

NAPOLITANI, ENRICO
 Distribuzione geografica
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Continente #
AS - Asia 3.789
NA - Nord America 2.196
EU - Europa 835
SA - Sud America 634
AF - Africa 65
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 5
Totale 7.553
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Nazione #
US - Stati Uniti d'America 2.059
SG - Singapore 1.587
CN - Cina 929
BR - Brasile 478
VN - Vietnam 369
HK - Hong Kong 356
FR - Francia 218
KR - Corea 194
EE - Estonia 190
IT - Italia 135
NL - Olanda 78
CA - Canada 60
BD - Bangladesh 56
JP - Giappone 55
GB - Regno Unito 51
IN - India 51
DE - Germania 50
AR - Argentina 42
EC - Ecuador 37
ID - Indonesia 37
MX - Messico 34
IL - Israele 29
CO - Colombia 26
ZA - Sudafrica 21
ES - Italia 19
FI - Finlandia 18
IQ - Iraq 18
VE - Venezuela 15
PH - Filippine 14
PY - Paraguay 14
RU - Federazione Russa 13
TR - Turchia 11
PL - Polonia 10
AE - Emirati Arabi Uniti 9
MA - Marocco 9
MY - Malesia 9
UA - Ucraina 9
SA - Arabia Saudita 8
UZ - Uzbekistan 8
CL - Cile 7
CR - Costa Rica 7
EG - Egitto 7
JM - Giamaica 7
KE - Kenya 7
UY - Uruguay 7
GT - Guatemala 6
JO - Giordania 6
LB - Libano 6
NP - Nepal 6
TN - Tunisia 6
BO - Bolivia 5
PK - Pakistan 5
AL - Albania 4
AT - Austria 4
GR - Grecia 4
PR - Porto Rico 4
SE - Svezia 4
TH - Thailandia 4
TT - Trinidad e Tobago 4
AU - Australia 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
ET - Etiopia 3
GE - Georgia 3
IE - Irlanda 3
PE - Perù 3
SV - El Salvador 3
TW - Taiwan 3
AZ - Azerbaigian 2
BG - Bulgaria 2
CH - Svizzera 2
CY - Cipro 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
HR - Croazia 2
HU - Ungheria 2
KG - Kirghizistan 2
LV - Lettonia 2
NI - Nicaragua 2
OM - Oman 2
PA - Panama 2
BA - Bosnia-Erzegovina 1
BE - Belgio 1
BH - Bahrain 1
BJ - Benin 1
BL - Saint Barthelemy 1
BW - Botswana 1
DM - Dominica 1
GA - Gabon 1
GD - Grenada 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MD - Moldavia 1
MG - Madagascar 1
MK - Macedonia 1
ML - Mali 1
MM - Myanmar 1
MN - Mongolia 1
Totale 7.510
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Città #
Singapore 955
Hefei 447
Santa Clara 364
Hong Kong 350
San Jose 337
Ashburn 228
Tallinn 190
Seoul 186
Lauterbourg 178
Ho Chi Minh City 122
Beijing 117
Los Angeles 85
Hanoi 83
Council Bluffs 41
New York 34
São Paulo 34
Dallas 27
Frankfurt am Main 24
Minamishinagawa 24
Milan 23
Tokyo 23
Guangzhou 21
Haiphong 20
Buffalo 17
Montreal 17
Brasília 16
Chicago 16
Orem 16
Bengaluru 15
Guayaquil 15
Rome 15
Da Nang 14
Helsinki 14
Quito 14
Biên Hòa 12
Dhaka 12
Rio de Janeiro 12
Phoenix 11
Porto Alegre 11
Johannesburg 10
Asunción 9
Atlanta 9
Boston 9
Düsseldorf 9
Las Vegas 9
Philadelphia 9
Vũng Tàu 9
Amsterdam 8
Belo Horizonte 8
Brooklyn 8
Denver 8
Memphis 8
Miami 8
St Louis 8
Cairo 7
Cavallino 7
Houston 7
Hải Dương 7
Manchester 7
Newark 7
Toronto 7
Verona 7
Bologna 6
Bắc Ninh 6
Campo Grande 6
Can Tho 6
Charlotte 6
Chennai 6
Curitiba 6
Medellín 6
Middletown 6
Montevideo 6
Nairobi 6
Queens 6
Salvador 6
Tampa 6
Tashkent 6
The Dalles 6
Thái Bình 6
Vienna 6
Amman 5
Boardman 5
Bogotá 5
Buenos Aires 5
Elk Grove Village 5
Florence 5
Fortaleza 5
Jakarta 5
Kuala Lumpur 5
London 5
Mumbai 5
Portland 5
San Francisco 5
San José 5
The Bronx 5
Akron 4
Anyang-si 4
Arlington 4
Baghdad 4
Bexley 4
Totale 4.528
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Nome #
B clustering in amorphous Si 136
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 131
B activation enhancement in submicron confined implants in Si 130
C ion-implanted TiO2 thin film for photocatalytic applications 99
Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2 94
Mechanism of B diffusion in crystalline Ge under proton irradiation 90
Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers 81
Suppression of boron diffusion by fluorine implantation in preamorphized silicon 79
Dissolution kinetics of boron-interstitial clusters in silicon 77
Carbon precipitation and diffusion in sigec alloys under silicon self-interstitial injection 74
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 74
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 74
Self-interstitials and substitutional C in silicon: Interstitial-trapping and C-clustering 73
Low-temperature atomic layer deposition of TiO2 activated by laser annealing: Applications in photocatalysis 71
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine 71
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 69
Atomistic modeling of FnVm complexes in pre-amorphized Si 69
Structural characterization of light elements in semiconductor materials by means of selected nuclear reactions 66
Atomistic mechanism of boron diffusion in silicon 64
Role of self-interstitials on B diffusion in Ge 63
Laser induced crystallization of sputtered MoS2 thin films 63
Laser crystallization of amorphous TiO2 on polymer 62
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection 61
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon 59
Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism 58
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting 58
Fluorine in Si: native-defects complexes and the suppression of impurity diffusion 57
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals 55
Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si 54
B-doping in Ge by excimer laser annealing 54
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 54
Dissolution kinetic of boron clusters in crystalline Si 53
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches 52
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 51
Mechanisms of boron diffusion in silicon and germanium 51
Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium 51
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing 51
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 51
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 51
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 50
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 50
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing 50
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 49
Formation and dissolution of D-N complexes in dilute nitrides 49
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution 48
Scanning capacitance microscopy of semiconductors for process and device characterisation 48
Fluorine effect on As diffusion in Ge 48
High level active n(+) doping of strained germanium through co-implantation and nanosecond pulsed laser melting 47
Depth distribution of B implanted in Si after excimer laser irradiation 46
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium 46
p-type doping of Ge by Al ion implantation and pulsed laser melting 46
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 46
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 46
N-type doping of Ge by As implantation and excimer laser annealing 45
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si 44
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting 43
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 43
Fluorine in Ge: Segregation and EOR-defects stabilization 42
Erbium-oxygen interactions in crystalline silicon 42
Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response 42
Anomalous transport of Sb in laser irradiated Ge 42
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 42
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 42
Extended point defects in crystalline materials: Ge and Si 41
Oxygen behavior in germanium during melting laser thermal annealing 41
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 41
Role of ion mass on damage accumulation during ion implantation in Ge 40
Mechanism of boron diffusion in amorphous silicon 40
Point defect engineering in preamorphized silicon enriched with fluorine 39
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 39
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 39
Diffusion enhanced carbon loss from SiGeC layers due to oxidation 38
Fluorine incorporation during Si solid phase epitaxy 38
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes 37
Modeling of self-interstitial diffusion in implanted molecular beam epitaxy silicon 37
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 37
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 37
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 36
Indiffusion of oxygen in germanium induced by pulsed laser melting 35
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 34
Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique 34
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 33
Effects of atmospheric pressure plasma JET treatment on aluminium alloys 33
Carrier distribution in quantum nanostructures by scanning capacitance microscopy 32
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 32
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection 32
Underground study of the O-17(p,gamma) F-18 reaction relevant for explosive hydrogen burning 31
Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing 31
Effect of strain on the carrier mobility in heavily doped p-type Si 31
Fluorine incorporation in preamorphized silicon 31
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 31
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium 30
He induced nanovoids for point-defect engineering in B-implanted crystalline Si 30
Evidences of F-induced nanobubbles as sink for self-interstitials in Si 30
Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si 30
Cerium-based chemical conversion coating on AZ63 magnesium alloy 30
Carrier concentration and mobility in B doped Si1-xGex 30
Ion Implantation Defects and Shallow Junctions in Si and Ge 30
Impurity and defect interactions during laser thermal annealing in Ge 30
Influence of atmospheric pressure plasma treatments on the corrosion resistance of stainless steels 29
Totale 5.096
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Categoria #
all - tutte 29.986
article - articoli 26.211
book - libri 101
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 536
Totale 56.834
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202439 0 0 0 0 0 0 0 0 3 0 33 3
2024/20252.486 14 13 196 302 296 73 22 106 82 98 697 587
2025/20264.054 249 411 392 648 683 187 715 212 199 189 87 82
2026/2027974 197 265 512 0 0 0 0 0 0 0 0 0
Totale 7.553