CNR Institutional Research Information System

NAPOLITANI, ENRICO
 Distribuzione geografica
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Continente #
AS - Asia 3.699
NA - Nord America 1.374
EU - Europa 742
SA - Sud America 581
AF - Africa 60
OC - Oceania 4
Totale 6.460
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Nazione #
SG - Singapore 1.583
US - Stati Uniti d'America 1.300
CN - Cina 927
BR - Brasile 469
VN - Vietnam 357
HK - Hong Kong 353
FR - Francia 217
KR - Corea 193
EE - Estonia 190
NL - Olanda 76
IT - Italia 68
JP - Giappone 55
IN - India 51
DE - Germania 50
AR - Argentina 41
GB - Regno Unito 37
IL - Israele 29
BD - Bangladesh 28
CA - Canada 28
EC - Ecuador 26
MX - Messico 25
ID - Indonesia 24
ZA - Sudafrica 21
FI - Finlandia 18
IQ - Iraq 18
ES - Italia 15
PY - Paraguay 14
RU - Federazione Russa 13
TR - Turchia 10
PH - Filippine 9
UA - Ucraina 9
MA - Marocco 8
PL - Polonia 8
UZ - Uzbekistan 8
CO - Colombia 7
EG - Egitto 7
SA - Arabia Saudita 7
VE - Venezuela 7
AE - Emirati Arabi Uniti 6
CL - Cile 6
JO - Giordania 6
KE - Kenya 6
LB - Libano 5
NP - Nepal 5
TN - Tunisia 5
AT - Austria 4
BO - Bolivia 4
CR - Costa Rica 4
PK - Pakistan 4
SE - Svezia 4
TT - Trinidad e Tobago 4
UY - Uruguay 4
AL - Albania 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
ET - Etiopia 3
GE - Georgia 3
GR - Grecia 3
IE - Irlanda 3
PE - Perù 3
TW - Taiwan 3
AU - Australia 2
AZ - Azerbaigian 2
BG - Bulgaria 2
CH - Svizzera 2
CY - Cipro 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
HR - Croazia 2
HU - Ungheria 2
KG - Kirghizistan 2
LV - Lettonia 2
PA - Panama 2
SV - El Salvador 2
BA - Bosnia-Erzegovina 1
BE - Belgio 1
BH - Bahrain 1
BW - Botswana 1
DM - Dominica 1
GA - Gabon 1
GD - Grenada 1
JM - Giamaica 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MD - Moldavia 1
MG - Madagascar 1
MK - Macedonia 1
ML - Mali 1
MM - Myanmar 1
MY - Malesia 1
NG - Nigeria 1
NI - Nicaragua 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PF - Polinesia Francese 1
PR - Porto Rico 1
QA - Qatar 1
RE - Reunion 1
Totale 6.454
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Città #
Singapore 952
Hefei 447
Santa Clara 353
Hong Kong 349
San Jose 235
Tallinn 190
Seoul 186
Lauterbourg 178
Ashburn 145
Beijing 116
Ho Chi Minh City 116
Hanoi 81
Los Angeles 80
São Paulo 34
New York 27
Frankfurt am Main 24
Minamishinagawa 24
Tokyo 23
Dallas 21
Guangzhou 20
Haiphong 19
Orem 16
Bengaluru 15
Buffalo 15
Brasília 14
Helsinki 14
Da Nang 13
Guayaquil 13
Biên Hòa 12
Chicago 12
Rio de Janeiro 12
Porto Alegre 11
Johannesburg 10
Montreal 10
Asunción 9
Düsseldorf 9
Phoenix 9
Vũng Tàu 9
Denver 8
Quito 8
Amsterdam 7
Belo Horizonte 7
Cairo 7
Dhaka 7
Hải Dương 7
Milan 7
Verona 7
Atlanta 6
Bắc Ninh 6
Campo Grande 6
Can Tho 6
Cavallino 6
Chennai 6
Curitiba 6
Rome 6
Salvador 6
Tashkent 6
The Dalles 6
Thái Bình 6
Toronto 6
Amman 5
Boston 5
Brooklyn 5
Buenos Aires 5
Elk Grove Village 5
Fortaleza 5
Jakarta 5
Manchester 5
Mumbai 5
Nairobi 5
Anyang-si 4
Baghdad 4
Bexley 4
Blumenau 4
Bologna 4
Bình Dương Province 4
Cape Town 4
Council Bluffs 4
Erbil 4
Joinville 4
London 4
Manaus 4
Mexico City 4
Natal 4
Ninh Bình 4
Osaka 4
Portsmouth 4
Roubaix 4
Santo André 4
Shanghai 4
St Louis 4
São Bernardo do Campo 4
São José dos Campos 4
Tianjin 4
Vienna 4
Warsaw 4
Addis Ababa 3
Bandung 3
Campinas 3
Campos dos Goytacazes 3
Totale 4.132
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Nome #
B clustering in amorphous Si 126
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 122
B activation enhancement in submicron confined implants in Si 89
C ion-implanted TiO2 thin film for photocatalytic applications 88
Mechanism of B diffusion in crystalline Ge under proton irradiation 87
Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2 87
Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers 75
Dissolution kinetics of boron-interstitial clusters in silicon 71
Suppression of boron diffusion by fluorine implantation in preamorphized silicon 71
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 71
Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] 70
Carbon precipitation and diffusion in sigec alloys under silicon self-interstitial injection 69
Low-temperature atomic layer deposition of TiO2 activated by laser annealing: Applications in photocatalysis 67
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine 65
Self-interstitials and substitutional C in silicon: Interstitial-trapping and C-clustering 63
Atomistic modeling of FnVm complexes in pre-amorphized Si 63
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 62
Structural characterization of light elements in semiconductor materials by means of selected nuclear reactions 61
Atomistic mechanism of boron diffusion in silicon 61
Role of self-interstitials on B diffusion in Ge 60
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon 57
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection 56
Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism 54
Laser induced crystallization of sputtered MoS2 thin films 53
Laser crystallization of amorphous TiO2 on polymer 53
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting 51
Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si 50
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting 50
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals 49
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing 48
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 48
Fluorine in Si: native-defects complexes and the suppression of impurity diffusion 47
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution 46
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 46
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 46
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing 46
Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium 45
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 45
Fluorine effect on As diffusion in Ge 44
Mechanisms of boron diffusion in silicon and germanium 44
Scanning capacitance microscopy of semiconductors for process and device characterisation 43
Depth distribution of B implanted in Si after excimer laser irradiation 43
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors 43
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 43
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches 43
Dissolution kinetic of boron clusters in crystalline Si 42
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium 42
p-type doping of Ge by Al ion implantation and pulsed laser melting 41
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 40
High level active n(+) doping of strained germanium through co-implantation and nanosecond pulsed laser melting 40
Formation and dissolution of D-N complexes in dilute nitrides 40
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 39
Role of ion mass on damage accumulation during ion implantation in Ge 38
Anomalous transport of Sb in laser irradiated Ge 38
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting 38
B-doping in Ge by excimer laser annealing 37
Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response 37
N-type doping of Ge by As implantation and excimer laser annealing 37
Fluorine in Ge: Segregation and EOR-defects stabilization 36
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 36
Extended point defects in crystalline materials: Ge and Si 36
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 36
Mechanism of boron diffusion in amorphous silicon 36
Evidence of a New Hydrogen Complex in Dilute Nitride Alloys 36
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 36
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 36
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 36
Fluorine incorporation during Si solid phase epitaxy 35
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 35
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes 34
Diffusion enhanced carbon loss from SiGeC layers due to oxidation 34
Erbium-oxygen interactions in crystalline silicon 34
Point defect engineering in preamorphized silicon enriched with fluorine 33
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 33
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si 33
Oxygen behavior in germanium during melting laser thermal annealing 33
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 32
Indiffusion of oxygen in germanium induced by pulsed laser melting 32
Modeling of self-interstitial diffusion in implanted molecular beam epitaxy silicon 31
Effect of strain on the carrier mobility in heavily doped p-type Si 29
Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si 28
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 28
Cerium-based chemical conversion coating on AZ63 magnesium alloy 28
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection 28
Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique 28
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 27
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 27
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 27
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium 26
He induced nanovoids for point-defect engineering in B-implanted crystalline Si 26
Evidences of F-induced nanobubbles as sink for self-interstitials in Si 26
Carrier distribution in quantum nanostructures by scanning capacitance microscopy 26
Iso-concentration study of atomistic mechanism of B diffusion in Si 26
Si-based materials for advanced microelectronic devices: Synthesis, defects and diffusion 26
Carrier concentration and mobility in B doped Si1-xGex 26
Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing 25
Influence of atmospheric pressure plasma treatments on the corrosion resistance of stainless steels 25
Ion Implantation Defects and Shallow Junctions in Si and Ge 25
Mesoscopic capacitor effect in GaN/AlGaN quantum wells 24
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 24
Totale 4.508
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Categoria #
all - tutte 23.826
article - articoli 20.864
book - libri 81
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 423
Totale 45.194
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202439 0 0 0 0 0 0 0 0 3 0 33 3
2024/20252.486 14 13 196 302 296 73 22 106 82 98 697 587
2025/20263.963 249 411 392 648 683 187 715 212 199 189 78 0
Totale 6.488