CNR Institutional Research Information System

GRECO, GIUSEPPE
 Distribuzione geografica
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Continente #
AS - Asia 2.294
NA - Nord America 1.057
EU - Europa 674
SA - Sud America 371
AF - Africa 36
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.436
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Nazione #
US - Stati Uniti d'America 1.016
SG - Singapore 910
CN - Cina 612
BR - Brasile 294
IT - Italia 246
HK - Hong Kong 227
VN - Vietnam 223
FR - Francia 112
KR - Corea 94
NL - Olanda 71
FI - Finlandia 67
JP - Giappone 55
IN - India 54
DE - Germania 46
AR - Argentina 33
GB - Regno Unito 31
CA - Canada 22
PL - Polonia 18
IL - Israele 16
BD - Bangladesh 13
CO - Colombia 13
EC - Ecuador 12
ID - Indonesia 12
ES - Italia 11
RU - Federazione Russa 11
AE - Emirati Arabi Uniti 8
TR - Turchia 8
ZA - Sudafrica 8
AT - Austria 6
IE - Irlanda 6
IQ - Iraq 6
JM - Giamaica 6
MA - Marocco 6
MX - Messico 6
PE - Perù 6
PH - Filippine 6
PK - Pakistan 6
PY - Paraguay 6
TW - Taiwan 6
JO - Giordania 5
LV - Lettonia 5
PT - Portogallo 5
SA - Arabia Saudita 5
AZ - Azerbaigian 4
DZ - Algeria 4
EG - Egitto 4
GR - Grecia 4
HU - Ungheria 4
MY - Malesia 4
TN - Tunisia 4
TT - Trinidad e Tobago 4
CZ - Repubblica Ceca 3
EE - Estonia 3
RO - Romania 3
SE - Svezia 3
SN - Senegal 3
TH - Thailandia 3
UA - Ucraina 3
UY - Uruguay 3
UZ - Uzbekistan 3
AL - Albania 2
AU - Australia 2
BY - Bielorussia 2
CL - Cile 2
CR - Costa Rica 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LB - Libano 2
MD - Moldavia 2
NA - Namibia 2
SI - Slovenia 2
BE - Belgio 1
BF - Burkina Faso 1
BH - Bahrain 1
BO - Bolivia 1
BW - Botswana 1
CH - Svizzera 1
DK - Danimarca 1
IR - Iran 1
KE - Kenya 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LT - Lituania 1
LU - Lussemburgo 1
MK - Macedonia 1
MZ - Mozambico 1
NI - Nicaragua 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 4.436
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Città #
Singapore 546
San Jose 238
Hefei 237
Hong Kong 223
Santa Clara 177
Beijing 115
Lauterbourg 94
Seoul 90
Ashburn 87
Ho Chi Minh City 78
Los Angeles 68
Cavallino 60
Hanoi 59
Lappeenranta 37
Dallas 35
Tokyo 34
São Paulo 27
Catania 24
New York 23
Buffalo 15
Helsinki 15
Milan 15
Orem 15
Turku 15
Bologna 14
Guangzhou 14
Rome 14
Frankfurt am Main 13
Minamishinagawa 13
Warsaw 13
Bengaluru 11
Chennai 11
Rio de Janeiro 11
Council Bluffs 10
Messina 10
Miami 10
Haiphong 9
Seattle 9
Da Nang 8
Munich 8
Amsterdam 7
Curitiba 7
Falkenstein 7
Brooklyn 6
Johannesburg 6
Montreal 6
Palermo 6
Amman 5
Atlanta 5
Belo Horizonte 5
Buenos Aires 5
Campinas 5
Chicago 5
Dubai 5
Dublin 5
Guayaquil 5
Manchester 5
Mumbai 5
Ninh Bình 5
Phoenix 5
Quito 5
Riga 5
San Francisco 5
Baku 4
Biên Hòa 4
City of London 4
Houston 4
Istanbul 4
Kingston 4
Pescara 4
Port of Spain 4
Shanghai 4
São Carlos 4
São José dos Campos 4
Toronto 4
Trieste 4
Vienna 4
Wuhan 4
Alvorada 3
Baghdad 3
Cairo 3
Camaçari 3
Can Tho 3
Carapicuíba 3
Ciudad del Este 3
Colombo 3
Dakar 3
Dhaka 3
Düsseldorf 3
Fortaleza 3
Francofonte 3
Guarulhos 3
Hải Dương 3
Jundiaí 3
Juneau 3
Lahore 3
Lima region 3
Lisbon 3
Lucca 3
Manaus 3
Totale 2.756
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 113
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 98
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 98
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 93
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 91
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 88
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 78
Challenges for energy efficient wide band gap semiconductors power devices 70
The Electronic Nose: Review on Sensor Arrays and Future Perspectives 70
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 66
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 65
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 63
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 61
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 59
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 58
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 57
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 57
Pedot:PSS/Graphene Oxide (GO) Ternary Nanocomposites for Electrochemical Applications 57
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 55
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 55
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 54
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Study of behavior of p-gate in Power GaN under positive voltage 53
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 53
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 52
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 52
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 52
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 52
Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation 52
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 52
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 50
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 49
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 49
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 49
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 49
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 48
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 47
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 45
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures 45
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 45
How Coffee Capsules Affect the Volatilome in Espresso Coffee 45
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 44
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 44
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices 43
Ni/Heavily-Doped 4H-SiC Schottky Contacts 43
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 41
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: role of the AlGaN layer microstructure 41
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 41
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 40
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 40
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 40
Selective Doping in Silicon Carbide Power Devices 40
Potentialities of nickel oxide as dielectric for GaN and SiC devices 39
Status and prospects of cubic silicon carbide power electronics device technology 39
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 39
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 39
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 39
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 38
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 37
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 37
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors 36
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 36
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 35
Metal/semiconductor contacts to silicon carbide: Physics and technology 34
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 33
Technologies for normally-off GaN HEMTs 32
Conduction mechanisms in epitaxial NiO gate dielectric on AlGaN/GaN heterostructure 32
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 31
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs 31
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 30
Review of technology for normally-off HEMTs with p-GaN gate 30
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof 30
Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model 28
Recent advances on dielectrics technology for SiC and GaN power devices 27
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 27
Electrical properties of thermal oxide on 3C-SIC layers grown on silicon 27
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization 26
Ohmic contacts to GaN materials 26
Nanoscale Electrical Mapping of Two-dimensional Materials by Conductive Atomic Force Microscopy for Transistors Applications 24
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors 24
Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology 24
Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition 24
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 23
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures 23
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN 23
Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides 23
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures 23
Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications 22
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 22
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC 22
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures 22
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality 22
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 21
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC 21
Electrical behaviour of detective AlGaN/GaN heterostructures grown on misoriented (8°-off-axis) 4H-SiC substrates 20
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density 20
Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures 20
Totale 4.410
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Categoria #
all - tutte 15.412
article - articoli 13.418
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 164
Totale 28.994
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202436 0 0 0 0 0 0 0 0 0 0 21 15
2024/20251.809 2 9 110 53 174 270 116 148 85 79 425 338
2025/20262.803 168 298 259 428 477 135 437 170 196 141 94 0
Totale 4.648