CNR Institutional Research Information System

GRECO, GIUSEPPE
 Distribuzione geografica
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Continente #
AS - Asia 2.321
NA - Nord America 1.245
EU - Europa 713
SA - Sud America 378
Continente sconosciuto - Info sul continente non disponibili 216
AF - Africa 36
OC - Oceania 3
Totale 4.912
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Nazione #
US - Stati Uniti d'America 1.183
SG - Singapore 912
CN - Cina 613
BR - Brasile 295
IT - Italia 279
HK - Hong Kong 228
VN - Vietnam 223
FR - Francia 112
KR - Corea 94
NL - Olanda 71
FI - Finlandia 67
JP - Giappone 56
IN - India 54
DE - Germania 47
CA - Canada 36
AR - Argentina 33
GB - Regno Unito 33
BD - Bangladesh 32
PL - Polonia 18
IL - Israele 16
CO - Colombia 15
EC - Ecuador 14
ID - Indonesia 13
ES - Italia 12
RU - Federazione Russa 11
TR - Turchia 9
AE - Emirati Arabi Uniti 8
JM - Giamaica 8
ZA - Sudafrica 8
AT - Austria 6
IE - Irlanda 6
IQ - Iraq 6
MA - Marocco 6
MX - Messico 6
PE - Perù 6
PH - Filippine 6
PK - Pakistan 6
PY - Paraguay 6
TW - Taiwan 6
JO - Giordania 5
LV - Lettonia 5
MY - Malesia 5
PT - Portogallo 5
SA - Arabia Saudita 5
AZ - Azerbaigian 4
CR - Costa Rica 4
DZ - Algeria 4
EG - Egitto 4
GR - Grecia 4
HU - Ungheria 4
TN - Tunisia 4
TT - Trinidad e Tobago 4
CH - Svizzera 3
CL - Cile 3
CZ - Repubblica Ceca 3
EE - Estonia 3
RO - Romania 3
SE - Svezia 3
SN - Senegal 3
TH - Thailandia 3
UA - Ucraina 3
UY - Uruguay 3
UZ - Uzbekistan 3
AL - Albania 2
AU - Australia 2
BY - Bielorussia 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LB - Libano 2
MD - Moldavia 2
NA - Namibia 2
SI - Slovenia 2
VE - Venezuela 2
BB - Barbados 1
BE - Belgio 1
BF - Burkina Faso 1
BH - Bahrain 1
BO - Bolivia 1
BW - Botswana 1
DK - Danimarca 1
GT - Guatemala 1
HN - Honduras 1
IR - Iran 1
KE - Kenya 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LT - Lituania 1
LU - Lussemburgo 1
MK - Macedonia 1
MZ - Mozambico 1
NI - Nicaragua 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
XK - ???statistics.table.value.countryCode.XK??? 1
YE - Yemen 1
Totale 4.697
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Città #
Singapore 546
San Jose 240
Hefei 237
Hong Kong 224
Santa Clara 186
Ashburn 127
Beijing 116
Lauterbourg 94
Seoul 90
Ho Chi Minh City 78
Los Angeles 73
Cavallino 60
Hanoi 59
Lappeenranta 37
Dallas 36
Tokyo 35
São Paulo 27
New York 25
Catania 24
Milan 19
Buffalo 17
Rome 16
Helsinki 15
Orem 15
Turku 15
Bologna 14
Guangzhou 14
Frankfurt am Main 13
Minamishinagawa 13
Warsaw 13
Bengaluru 11
Chennai 11
Rio de Janeiro 11
Council Bluffs 10
Messina 10
Miami 10
Haiphong 9
Seattle 9
Chicago 8
Da Nang 8
Houston 8
Montreal 8
Munich 8
Phoenix 8
Amsterdam 7
Curitiba 7
Falkenstein 7
Guayaquil 7
Atlanta 6
Brooklyn 6
Johannesburg 6
Kingston 6
Palermo 6
Toronto 6
Amman 5
Belo Horizonte 5
Boardman 5
Buenos Aires 5
Campinas 5
Dubai 5
Dublin 5
Istanbul 5
Manchester 5
Mumbai 5
Ninh Bình 5
Quito 5
Riga 5
San Francisco 5
Turin 5
Baku 4
Biên Hòa 4
City of London 4
Medellín 4
Pescara 4
Port of Spain 4
San Diego 4
Shanghai 4
São Carlos 4
São José dos Campos 4
Trieste 4
Vienna 4
Washington 4
Wuhan 4
Alvorada 3
Baghdad 3
Cairo 3
Calgary 3
Camaçari 3
Can Tho 3
Carapicuíba 3
Ciudad del Este 3
Colombo 3
Dakar 3
Dhaka 3
Düsseldorf 3
Figino 3
Fortaleza 3
Francofonte 3
Genoa 3
Guarulhos 3
Totale 2.853
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 114
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 104
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 99
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 95
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 94
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 90
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 86
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 79
Challenges for energy efficient wide band gap semiconductors power devices 74
The Electronic Nose: Review on Sensor Arrays and Future Perspectives 73
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 66
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 66
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 63
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 63
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 62
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 61
Pedot:PSS/Graphene Oxide (GO) Ternary Nanocomposites for Electrochemical Applications 61
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 60
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 60
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 60
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 58
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 58
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 58
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 57
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 55
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 54
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 54
Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation 54
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 54
Study of behavior of p-gate in Power GaN under positive voltage 53
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 53
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 53
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 52
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 52
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 52
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 52
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 52
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 51
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 51
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 49
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 48
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 48
Ni/Heavily-Doped 4H-SiC Schottky Contacts 48
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures 47
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 47
How Coffee Capsules Affect the Volatilome in Espresso Coffee 47
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices 46
Selective Doping in Silicon Carbide Power Devices 45
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 44
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 44
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 44
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 43
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 43
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: role of the AlGaN layer microstructure 42
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 42
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 42
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 41
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 41
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 41
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 41
Potentialities of nickel oxide as dielectric for GaN and SiC devices 39
Status and prospects of cubic silicon carbide power electronics device technology 39
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 38
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors 37
Conduction mechanisms in epitaxial NiO gate dielectric on AlGaN/GaN heterostructure 37
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 37
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 35
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 34
Metal/semiconductor contacts to silicon carbide: Physics and technology 34
Technologies for normally-off GaN HEMTs 33
Review of technology for normally-off HEMTs with p-GaN gate 33
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof 32
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs 32
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 31
Recent advances on dielectrics technology for SiC and GaN power devices 30
Electrical properties of thermal oxide on 3C-SIC layers grown on silicon 30
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization 29
Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model 29
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 28
Nanoscale Electrical Mapping of Two-dimensional Materials by Conductive Atomic Force Microscopy for Transistors Applications 28
Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition 27
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 26
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN 26
Ohmic contacts to GaN materials 26
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality 26
Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology 25
Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications 24
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors 24
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 24
Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides 24
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures 24
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC 23
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures 23
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 22
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC 22
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures 22
Graphene integration with nitride semiconductors for high power and high frequency electronics 21
Challenges in graphene integration for high-frequency electronics 21
Electrical behaviour of detective AlGaN/GaN heterostructures grown on misoriented (8°-off-axis) 4H-SiC substrates 20
Totale 4.657
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Categoria #
all - tutte 17.647
article - articoli 15.328
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 189
Totale 33.164
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202436 0 0 0 0 0 0 0 0 0 0 21 15
2024/20251.809 2 9 110 53 174 270 116 148 85 79 425 338
2025/20262.906 168 298 259 428 477 135 437 170 196 141 109 88
2026/2027161 160 1 0 0 0 0 0 0 0 0 0 0
Totale 4.912