CNR Institutional Research Information System

GRECO, GIUSEPPE
 Distribuzione geografica
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Continente #
AS - Asia 2.353
NA - Nord America 1.561
EU - Europa 770
SA - Sud America 404
Continente sconosciuto - Info sul continente non disponibili 216
AF - Africa 36
OC - Oceania 3
Totale 5.343
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Nazione #
US - Stati Uniti d'America 1.478
SG - Singapore 914
CN - Cina 619
IT - Italia 317
BR - Brasile 305
HK - Hong Kong 228
VN - Vietnam 224
FR - Francia 112
KR - Corea 95
NL - Olanda 71
FI - Finlandia 67
JP - Giappone 56
IN - India 55
DE - Germania 49
CA - Canada 46
GB - Regno Unito 42
BD - Bangladesh 41
AR - Argentina 35
PL - Polonia 23
ID - Indonesia 20
CO - Colombia 19
EC - Ecuador 19
IL - Israele 16
ES - Italia 12
RU - Federazione Russa 11
MX - Messico 9
TR - Turchia 9
AE - Emirati Arabi Uniti 8
JM - Giamaica 8
PH - Filippine 8
TW - Taiwan 8
ZA - Sudafrica 8
CR - Costa Rica 7
AT - Austria 6
IE - Irlanda 6
IQ - Iraq 6
MA - Marocco 6
PE - Perù 6
PK - Pakistan 6
PY - Paraguay 6
VE - Venezuela 6
JO - Giordania 5
LV - Lettonia 5
MY - Malesia 5
PT - Portogallo 5
SA - Arabia Saudita 5
TT - Trinidad e Tobago 5
AZ - Azerbaigian 4
CL - Cile 4
DZ - Algeria 4
EE - Estonia 4
EG - Egitto 4
GR - Grecia 4
HN - Honduras 4
HU - Ungheria 4
TH - Thailandia 4
TN - Tunisia 4
BY - Bielorussia 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
RO - Romania 3
SE - Svezia 3
SN - Senegal 3
UA - Ucraina 3
UY - Uruguay 3
UZ - Uzbekistan 3
AL - Albania 2
AU - Australia 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LB - Libano 2
MD - Moldavia 2
NA - Namibia 2
SI - Slovenia 2
BB - Barbados 1
BE - Belgio 1
BF - Burkina Faso 1
BH - Bahrain 1
BO - Bolivia 1
BW - Botswana 1
DK - Danimarca 1
GT - Guatemala 1
IR - Iran 1
IS - Islanda 1
KE - Kenya 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LT - Lituania 1
LU - Lussemburgo 1
MK - Macedonia 1
MZ - Mozambico 1
NI - Nicaragua 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PA - Panama 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 5.127
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Città #
Singapore 548
San Jose 278
Hefei 238
Hong Kong 224
Santa Clara 197
Ashburn 150
Beijing 116
Lauterbourg 94
Seoul 90
Ho Chi Minh City 78
Los Angeles 76
Cavallino 60
Hanoi 60
Lappeenranta 37
Dallas 36
Tokyo 35
New York 30
São Paulo 28
Catania 26
Milan 24
Buffalo 22
Rome 18
Bologna 16
Helsinki 15
Orem 15
Turku 15
Guangzhou 14
Council Bluffs 13
Frankfurt am Main 13
Miami 13
Minamishinagawa 13
Warsaw 13
Brooklyn 12
Chicago 12
Bengaluru 11
Chennai 11
Phoenix 11
Rio de Janeiro 11
Seattle 11
Atlanta 10
Messina 10
Philadelphia 10
Figino 9
Haiphong 9
Manchester 9
Da Nang 8
Guayaquil 8
Houston 8
Montreal 8
Munich 8
Quito 8
Amsterdam 7
Curitiba 7
Falkenstein 7
Toronto 7
Turin 7
Washington 7
Buenos Aires 6
Johannesburg 6
Kingston 6
Palermo 6
Amman 5
Belo Horizonte 5
Boardman 5
Brasília 5
Campinas 5
Czaniec 5
Dubai 5
Dublin 5
Istanbul 5
Mumbai 5
Ninh Bình 5
Pittsburgh 5
Ravenna 5
Riga 5
San Francisco 5
San José 5
The Bronx 5
Baku 4
Biên Hòa 4
Calgary 4
Charlotte 4
City of London 4
Dhaka 4
Jacksonville 4
Las Vegas 4
Medellín 4
Newark 4
Orlando 4
Pescara 4
Port of Spain 4
Queens 4
San Diego 4
Scarborough 4
Shanghai 4
São Carlos 4
São José dos Campos 4
Trieste 4
Vienna 4
Wuhan 4
Totale 3.028
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 116
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 109
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 107
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 104
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 101
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 98
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 94
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 81
The Electronic Nose: Review on Sensor Arrays and Future Perspectives 79
Challenges for energy efficient wide band gap semiconductors power devices 77
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 71
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 70
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 68
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 67
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 65
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 65
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 64
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 64
Pedot:PSS/Graphene Oxide (GO) Ternary Nanocomposites for Electrochemical Applications 64
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 62
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 62
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 62
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 61
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 61
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 60
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 60
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 59
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 59
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 59
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 58
Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation 58
Study of behavior of p-gate in Power GaN under positive voltage 56
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 56
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 55
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 55
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 55
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 55
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 54
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 54
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 54
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 54
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 53
How Coffee Capsules Affect the Volatilome in Espresso Coffee 52
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 51
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 51
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 50
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices 50
Ni/Heavily-Doped 4H-SiC Schottky Contacts 50
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures 49
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 49
Selective Doping in Silicon Carbide Power Devices 49
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 46
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 46
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 46
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 46
Potentialities of nickel oxide as dielectric for GaN and SiC devices 45
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 45
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 45
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: role of the AlGaN layer microstructure 44
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 44
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 44
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 42
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 41
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 41
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors 40
Status and prospects of cubic silicon carbide power electronics device technology 40
Conduction mechanisms in epitaxial NiO gate dielectric on AlGaN/GaN heterostructure 40
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 39
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 39
Metal/semiconductor contacts to silicon carbide: Physics and technology 39
Technologies for normally-off GaN HEMTs 39
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 39
Review of technology for normally-off HEMTs with p-GaN gate 38
Ohmic contacts to GaN materials 35
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof 35
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs 35
Recent advances on dielectrics technology for SiC and GaN power devices 32
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 32
Electrical properties of thermal oxide on 3C-SIC layers grown on silicon 32
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality 32
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization 30
Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model 30
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 29
Nanoscale Electrical Mapping of Two-dimensional Materials by Conductive Atomic Force Microscopy for Transistors Applications 29
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN 29
Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology 28
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures 28
Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition 28
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures 28
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors 27
Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications 26
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC 26
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 26
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices 26
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures 26
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density 25
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 25
Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides 25
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC 25
Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures 24
Totale 5.038
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Categoria #
all - tutte 19.180
article - articoli 16.669
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 206
Totale 36.055
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202436 0 0 0 0 0 0 0 0 0 0 21 15
2024/20251.809 2 9 110 53 174 270 116 148 85 79 425 338
2025/20262.906 168 298 259 428 477 135 437 170 196 141 109 88
2026/2027592 160 112 320 0 0 0 0 0 0 0 0 0
Totale 5.343