CNR Institutional Research Information System

GRECO, GIUSEPPE
 Distribuzione geografica
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Continente #
AS - Asia 141
NA - Nord America 36
EU - Europa 15
Totale 192
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Nazione #
SG - Singapore 119
US - Stati Uniti d'America 36
CN - Cina 19
IT - Italia 15
KR - Corea 3
Totale 192
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Città #
Singapore 91
Guangzhou 10
Santa Clara 8
Bologna 3
Catania 3
Seoul 3
Rimini 2
Rome 2
Sesto Fiorentino 2
Ashburn 1
Forest City 1
Totale 126
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Nome #
The Electronic Nose: Review on Sensor Arrays and Future Perspectives 14
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 6
How Coffee Capsules Affect the Volatilome in Espresso Coffee 6
Potentialities of nickel oxide as dielectric for GaN and SiC devices 5
Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology 5
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 4
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 4
Technologies for normally-off GaN HEMTs 4
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 4
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 4
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 4
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 3
Challenges for energy efficient wide band gap semiconductors power devices 3
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 3
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC 3
Study of Ti/Al/Ni ohmic contacts to P-type implanted 4H-SiC 3
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 3
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 3
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 3
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 3
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 3
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 3
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors 3
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 3
Metal/semiconductor contacts to silicon carbide: Physics and technology 3
Conduction mechanisms in epitaxial NiO gate dielectric on AlGaN/GaN heterostructure 3
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 3
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 3
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: role of the AlGaN layer microstructure 3
Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films 3
Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides 3
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric 3
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality 3
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 2
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 2
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 2
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 2
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors 2
Recent advances on dielectrics technology for SiC and GaN power devices 2
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 2
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 2
Electrical properties of thermal oxide on 3C-SIC layers grown on silicon 2
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization 2
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 2
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density 2
Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures 2
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 2
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 2
Challenges in graphene integration for high-frequency electronics 2
Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition 2
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 2
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 2
Ohmic contacts to GaN materials 2
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 2
Trapping states in SiO2/GaN MOS capacitors fabricated on recessed AlGaN/GaN heterostructures 2
Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures 2
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC 2
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof 2
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 2
Energy efficiency Through Novel AlGaN/GaN heterostructures (ETNA) 2
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 1
Electrical behaviour of detective AlGaN/GaN heterostructures grown on misoriented (8°-off-axis) 4H-SiC substrates 1
Nanoscale Electrical Mapping of Two-dimensional Materials by Conductive Atomic Force Microscopy for Transistors Applications 1
Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures 1
Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications 1
Graphene integration with nitride semiconductors for high power and high frequency electronics 1
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC 1
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures 1
Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT 1
Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing 1
Review of technology for normally-off HEMTs with p-GaN gate 1
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN 1
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS-based devices 1
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 1
Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs 1
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures 1
Physics and technology of gallium nitride materials for power electronics 1
Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model 1
Totale 198
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Categoria #
all - tutte 1.426
article - articoli 1.252
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 25
Totale 2.703
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202436 0 0 0 0 0 0 0 0 0 0 21 15
2024/2025162 1 9 108 44 0 0 0 0 0 0 0 0
Totale 198