RAINERI, VITO
 Distribuzione geografica
Continente #
AS - Asia 5.237
NA - Nord America 1.763
SA - Sud America 881
EU - Europa 623
AF - Africa 60
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.571
Nazione #
SG - Singapore 2.198
US - Stati Uniti d'America 1.683
CN - Cina 1.293
BR - Brasile 739
HK - Hong Kong 528
VN - Vietnam 516
FR - Francia 288
KR - Corea 281
IT - Italia 95
JP - Giappone 86
IN - India 78
AR - Argentina 63
NL - Olanda 42
IL - Israele 39
GB - Regno Unito 36
DE - Germania 33
ID - Indonesia 32
CA - Canada 30
FI - Finlandia 30
BD - Bangladesh 29
MX - Messico 26
IQ - Iraq 24
SA - Arabia Saudita 22
RU - Federazione Russa 20
TR - Turchia 18
EC - Ecuador 17
UA - Ucraina 15
ZA - Sudafrica 15
CL - Cile 14
EG - Egitto 13
PE - Perù 12
CO - Colombia 11
SE - Svezia 10
JO - Giordania 9
PK - Pakistan 9
UY - Uruguay 9
VE - Venezuela 9
AE - Emirati Arabi Uniti 8
ES - Italia 8
TW - Taiwan 8
UZ - Uzbekistan 8
MA - Marocco 7
NP - Nepal 7
AT - Austria 6
LB - Libano 6
MY - Malesia 6
PY - Paraguay 6
AU - Australia 5
CR - Costa Rica 5
DZ - Algeria 5
IE - Irlanda 5
PL - Polonia 5
KE - Kenya 4
RO - Romania 4
AL - Albania 3
AZ - Azerbaigian 3
BG - Bulgaria 3
DK - Danimarca 3
JM - Giamaica 3
OM - Oman 3
PA - Panama 3
PH - Filippine 3
TN - Tunisia 3
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BH - Bahrain 2
BN - Brunei Darussalam 2
CG - Congo 2
CH - Svizzera 2
ET - Etiopia 2
GE - Georgia 2
GT - Guatemala 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
SV - El Salvador 2
TH - Thailandia 2
AO - Angola 1
BE - Belgio 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
BZ - Belize 1
CI - Costa d'Avorio 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GR - Grecia 1
HN - Honduras 1
HU - Ungheria 1
KH - Cambogia 1
LC - Santa Lucia 1
LU - Lussemburgo 1
MD - Moldavia 1
ML - Mali 1
MM - Myanmar 1
Totale 8.556
Città #
Singapore 1.339
Hefei 683
Santa Clara 539
Hong Kong 520
San Jose 292
Seoul 277
Lauterbourg 259
Ho Chi Minh City 177
Beijing 164
Ashburn 127
Hanoi 110
Los Angeles 109
Buffalo 65
Dallas 60
São Paulo 53
Tokyo 40
Minamishinagawa 37
Helsinki 29
Bengaluru 26
Haiphong 22
Da Nang 19
Rio de Janeiro 19
Hải Dương 17
Brasília 16
Curitiba 14
New York 14
Guangzhou 13
Ninh Bình 13
Milan 12
Quận Bình Thạnh 12
Santo André 12
Belo Horizonte 11
Catania 11
Frankfurt am Main 11
Guarulhos 10
Jeddah 10
Shanghai 10
Amman 9
Biên Hòa 9
Brooklyn 9
Can Tho 9
Phoenix 9
Riyadh 9
Boston 8
Campinas 8
Houston 8
Thái Nguyên 8
Cairo 7
Dhaka 7
Guayaquil 7
Johannesburg 7
Long An 7
Montevideo 7
Orem 7
Palermo 7
Porto Alegre 7
Quận Một 7
Recife 7
Rome 7
Ankara 6
Anápolis 6
Atlanta 6
Baghdad 6
Chennai 6
Hangzhou 6
Jakarta 6
Lima 6
Mumbai 6
Nuremberg 6
Ribeirão Preto 6
Santiago 6
Tashkent 6
Vũng Tàu 6
Buenos Aires 5
Cape Town 5
Caracas 5
Juiz de Fora 5
Montreal 5
Nanjing 5
Phủ Lý 5
San José 5
The Dalles 5
Brandon 4
Bắc Giang 4
Bắc Ninh 4
Bến Tre 4
Camaçari 4
Canoas 4
Cariacica 4
Caruaru 4
Chicago 4
Cincinnati 4
Delhi 4
Elk Grove Village 4
Feira de Santana 4
Goiânia 4
Istanbul 4
Jacareí 4
Kolkata 4
Manaus 4
Totale 5.523
Nome #
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 98
B activation enhancement in submicron confined implants in Si 89
Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements 80
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes 78
Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO3 ceramics 74
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 72
Influence of substrate dielectric permittivity on local capacitive behavior in graphene 72
Electron transport properties of calix[4]arene based systems in a metal-molecule-metal junction 72
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 71
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation 70
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon 70
Optical, morphological and spectroscopic characterization of graphene on SiO2 67
X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films 67
Dual metal SiC Schottky rectifiers with low power dissipation 67
Scanning Capacitance Microscopy in Microelectronics 65
Electro-optical response of ion-irradiated 4H-SiC Schottky ultraviolet photodetectors 64
Drift mobility in quantum nanostructures by scanning probe microscopy 64
Kinetics of the C49-C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations 61
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 61
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) 61
Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films 60
High capacitance density by CaCu3Ti4O12 thin films 60
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications 59
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 58
Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process 57
Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si 57
Praseodymium based dielectrics: Metal-Organic Chemical Vapor Deposition (MOCVD) growth, characterization and applications 56
Ohmic contacts to SiC 54
Structural properties of fluorinated SiO2 thin films 52
Buried nano - Structured layers in high temperature - Pressure treated Si : He 52
Thin films advanced dielectrics for high frequency applications: deposition, (nano)characterization and device fabrication 50
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity 50
Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas 49
Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy 48
Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates 48
Clustering of gold on 6H-SiC and local nanoscale electrical properties 47
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 47
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 46
Roughness of thermal oxide layers grown on ion implanted silicon wafers 45
Two-dimensional electron gas insulation by local surface thin thermal oxidation in AlGaN/GaN heterostructures 44
Electronic properties of graphene probed at the nanoscale 44
Scanning capacitance microscopy of semiconductors for process and device characterisation 43
Thermal oxidation of As and Ge implanted Si(100) 43
CaCu(3)Ti(4)O(12) single crystals: insights on growth and nanoscopic investigation 42
MOCVD of praseodymium based films high k dielectric deposited on silicon substrate 41
Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations 41
Self-assembled metal nanostructures in semiconductor structures 41
Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy 41
From micro- to nanotransport properties in Pr2O3-based thin layers 40
Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide 40
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 40
4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring 40
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping 39
Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene 39
Microstructure of Au nanoclusters formed in and on SiO2 38
Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy 37
Thermal oxidation of Si (001) single crystal implanted with Ge ions 37
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 37
Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon 37
Localization of He induced nanovoids in buried Si1-xGex thin films 37
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN 35
High-resolution scanning capacitance microscopy of silicon devices by surface beveling 35
Reorientable dipolar Cu-Ca antisite and anomalous screening in CaCu3Ti4O12 35
Impact of hydrogen implantation on helium implantation induced defects 35
Precipitation of As in thermally oxidized ion-implanted Si crystals 35
Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy 34
High capacitance density capacitors based on calcium copper titanate thin films grown by MOCVD 34
Graphene: Synthesis and nanoscale characterization of electronic properties 34
Structural and electrical characterization of titanium and nickel silicide contacts on silicon carbide 34
Process for manufacturing a schottky contact on a semiconductor substrate 33
Impact of Morphological Features on the Dielectric Breakdown at SiO2/3C-SiC Interfaces 33
Microscopic study of electrical properties of CrSi(2) nanocrystals in silicon 33
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts 33
Assessing the performance of two-dimensional dopant profiling techniques 33
Transport properties of graphene with nanoscale lateral resolution 33
Carrier transport in advanced semiconductor materials 33
Colossal permittivity in advanced functional heterogeneous materials: the relevance of the local measurements at submicron scale 33
Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon 32
Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy 32
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 32
Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy 31
Local electrical properties of the 4H-SiC(0001)/graphene interface 31
Effects of high temperature annealing on MOCVD grown CaCu3Ti4O12 films on LaAlO3 substrates 31
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer 30
Characterization of C coimplanted GexSi1-x epitaxial layers formed by high dose Ge ion implantation in (100) Si 30
Highly Efficient Low Reverse Biased 4H-SiC Schottky Photodiodes for UV-Light Detection 30
Nanoscale transport properties at silicon carbide interfaces 30
Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions through Nanocharacterization and Substrate Nature Effects 30
SCTS: scanning capacitance transient spectroscopy 30
Electrical properties of MOCVD praseodymium oxide based MOS structures 30
Native point defects in CaCu3Ti4O12 30
Native point defects in CaCu3Ti4O12 29
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 29
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si 29
Surface and interface roughness after thermal oxidation of As, B, and Si implanted silicon wafers 29
Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts 29
New materials with Ultra high k dielectric constant fOr Tomorrow wireless electronics (NUOTO) 29
Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates 29
Correlation between leakage current and ion-irradiation induced defects in 4H-SiC Schottky diodes 29
Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces 29
Totale 4.524
Categoria #
all - tutte 29.622
article - articoli 24.081
book - libri 319
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 793
Totale 54.815


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202435 0 0 0 0 0 0 0 0 3 0 23 9
2024/20253.008 18 23 264 168 529 26 20 40 44 48 987 841
2025/20265.528 326 627 582 922 977 181 1.018 354 269 180 92 0
Totale 8.571