CNR Institutional Research Information System

RAINERI, VITO
 Distribuzione geografica
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Continente #
AS - Asia 5.285
NA - Nord America 2.081
SA - Sud America 883
EU - Europa 639
AF - Africa 60
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.955
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Nazione #
SG - Singapore 2.199
US - Stati Uniti d'America 1.989
CN - Cina 1.299
BR - Brasile 739
HK - Hong Kong 529
VN - Vietnam 519
FR - Francia 288
KR - Corea 281
IT - Italia 110
JP - Giappone 86
IN - India 79
AR - Argentina 63
BD - Bangladesh 62
NL - Olanda 42
IL - Israele 39
GB - Regno Unito 37
CA - Canada 35
DE - Germania 33
ID - Indonesia 32
FI - Finlandia 30
MX - Messico 26
IQ - Iraq 24
SA - Arabia Saudita 23
RU - Federazione Russa 20
TR - Turchia 18
EC - Ecuador 17
CL - Cile 15
UA - Ucraina 15
ZA - Sudafrica 15
EG - Egitto 13
CO - Colombia 12
PE - Perù 12
SE - Svezia 10
JO - Giordania 9
PK - Pakistan 9
UY - Uruguay 9
VE - Venezuela 9
AE - Emirati Arabi Uniti 8
ES - Italia 8
MY - Malesia 8
TW - Taiwan 8
UZ - Uzbekistan 8
MA - Marocco 7
NP - Nepal 7
AT - Austria 6
CR - Costa Rica 6
LB - Libano 6
PY - Paraguay 6
AU - Australia 5
DZ - Algeria 5
IE - Irlanda 5
JM - Giamaica 5
PL - Polonia 5
KE - Kenya 4
RO - Romania 4
AL - Albania 3
AZ - Azerbaigian 3
BG - Bulgaria 3
DK - Danimarca 3
GT - Guatemala 3
OM - Oman 3
PA - Panama 3
PH - Filippine 3
TN - Tunisia 3
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BH - Bahrain 2
BN - Brunei Darussalam 2
CG - Congo 2
CH - Svizzera 2
ET - Etiopia 2
GE - Georgia 2
HN - Honduras 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
SV - El Salvador 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AO - Angola 1
BE - Belgio 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
BZ - Belize 1
CI - Costa d'Avorio 1
DM - Dominica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GR - Grecia 1
HU - Ungheria 1
KH - Cambogia 1
LC - Santa Lucia 1
LU - Lussemburgo 1
MD - Moldavia 1
ML - Mali 1
Totale 8.939
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Città #
Singapore 1.339
Hefei 683
Santa Clara 544
Hong Kong 521
San Jose 304
Seoul 277
Lauterbourg 259
Ashburn 211
Ho Chi Minh City 178
Beijing 164
Los Angeles 112
Hanoi 111
Buffalo 68
Dallas 64
São Paulo 53
Tokyo 40
Minamishinagawa 37
Helsinki 29
Bengaluru 26
Haiphong 23
Da Nang 19
Rio de Janeiro 19
New York 18
Hải Dương 17
Brasília 16
Milan 15
Curitiba 14
Guangzhou 14
Shanghai 14
Houston 13
Ninh Bình 13
Boardman 12
Quận Bình Thạnh 12
Santo André 12
Belo Horizonte 11
Catania 11
Frankfurt am Main 11
Rome 11
Brooklyn 10
Guarulhos 10
Jeddah 10
Riyadh 10
Amman 9
Biên Hòa 9
Can Tho 9
Phoenix 9
Atlanta 8
Boston 8
Campinas 8
Thái Nguyên 8
Cairo 7
Dhaka 7
Guayaquil 7
Johannesburg 7
Long An 7
Montevideo 7
Mumbai 7
Orem 7
Palermo 7
Porto Alegre 7
Quận Một 7
Recife 7
Ankara 6
Anápolis 6
Baghdad 6
Chennai 6
Hangzhou 6
Jakarta 6
Lima 6
Montreal 6
Nuremberg 6
Philadelphia 6
Ribeirão Preto 6
San José 6
Santiago 6
Tashkent 6
Vũng Tàu 6
Brandon 5
Buenos Aires 5
Cape Town 5
Caracas 5
Cincinnati 5
Juiz de Fora 5
Nanjing 5
Phủ Lý 5
Sacramento 5
The Dalles 5
Berlin 4
Bắc Giang 4
Bắc Ninh 4
Bến Tre 4
Camaçari 4
Canoas 4
Cariacica 4
Caruaru 4
Charlotte 4
Chicago 4
Clarksville 4
Delhi 4
Elk Grove Village 4
Totale 5.679
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Nome #
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 103
B activation enhancement in submicron confined implants in Si 89
Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements 82
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes 79
Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO3 ceramics 77
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 74
Influence of substrate dielectric permittivity on local capacitive behavior in graphene 73
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon 72
Electron transport properties of calix[4]arene based systems in a metal-molecule-metal junction 72
Dual metal SiC Schottky rectifiers with low power dissipation 72
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation 71
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 71
Optical, morphological and spectroscopic characterization of graphene on SiO2 70
X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films 69
Scanning Capacitance Microscopy in Microelectronics 67
Electro-optical response of ion-irradiated 4H-SiC Schottky ultraviolet photodetectors 65
Drift mobility in quantum nanostructures by scanning probe microscopy 64
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) 63
Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si 62
Kinetics of the C49-C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations 61
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 61
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications 61
Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films 60
High capacitance density by CaCu3Ti4O12 thin films 60
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 59
Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process 57
Praseodymium based dielectrics: Metal-Organic Chemical Vapor Deposition (MOCVD) growth, characterization and applications 57
Ohmic contacts to SiC 56
Buried nano - Structured layers in high temperature - Pressure treated Si : He 53
Structural properties of fluorinated SiO2 thin films 52
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity 51
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 51
Thin films advanced dielectrics for high frequency applications: deposition, (nano)characterization and device fabrication 50
Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas 49
Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy 48
Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates 48
Self-assembled metal nanostructures in semiconductor structures 48
CaCu(3)Ti(4)O(12) single crystals: insights on growth and nanoscopic investigation 48
Clustering of gold on 6H-SiC and local nanoscale electrical properties 47
Thermal oxidation of As and Ge implanted Si(100) 47
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 47
Roughness of thermal oxide layers grown on ion implanted silicon wafers 47
Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations 46
Electronic properties of graphene probed at the nanoscale 46
Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy 45
Two-dimensional electron gas insulation by local surface thin thermal oxidation in AlGaN/GaN heterostructures 44
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 44
4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring 44
Scanning capacitance microscopy of semiconductors for process and device characterisation 43
From micro- to nanotransport properties in Pr2O3-based thin layers 42
MOCVD of praseodymium based films high k dielectric deposited on silicon substrate 41
Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide 41
Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene 41
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 41
Effect of Thermal Annealing on the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC 40
Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy 39
Microstructure of Au nanoclusters formed in and on SiO2 39
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping 39
Thermal oxidation of Si (001) single crystal implanted with Ge ions 39
High capacitance density capacitors based on calcium copper titanate thin films grown by MOCVD 39
Reorientable dipolar Cu-Ca antisite and anomalous screening in CaCu3Ti4O12 37
Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon 37
Localization of He induced nanovoids in buried Si1-xGex thin films 37
Structural and electrical characterization of titanium and nickel silicide contacts on silicon carbide 37
Impact of hydrogen implantation on helium implantation induced defects 36
Precipitation of As in thermally oxidized ion-implanted Si crystals 36
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN 35
High-resolution scanning capacitance microscopy of silicon devices by surface beveling 35
Local electrical properties of the 4H-SiC(0001)/graphene interface 35
Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy 34
Process for manufacturing a schottky contact on a semiconductor substrate 34
Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN 34
Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon 34
Graphene: Synthesis and nanoscale characterization of electronic properties 34
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts 34
Carrier transport in advanced semiconductor materials 34
Colossal permittivity in advanced functional heterogeneous materials: the relevance of the local measurements at submicron scale 34
Impact of Morphological Features on the Dielectric Breakdown at SiO2/3C-SiC Interfaces 33
Characterization of C coimplanted GexSi1-x epitaxial layers formed by high dose Ge ion implantation in (100) Si 33
Microscopic study of electrical properties of CrSi(2) nanocrystals in silicon 33
Highly Efficient Low Reverse Biased 4H-SiC Schottky Photodiodes for UV-Light Detection 33
Nanoscale transport properties at silicon carbide interfaces 33
Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy 33
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 33
Assessing the performance of two-dimensional dopant profiling techniques 33
Effects of high temperature annealing on MOCVD grown CaCu3Ti4O12 films on LaAlO3 substrates 33
Transport properties of graphene with nanoscale lateral resolution 33
New materials with Ultra high k dielectric constant fOr Tomorrow wireless electronics (NUOTO) 32
Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions through Nanocharacterization and Substrate Nature Effects 32
Native point defects in CaCu3Ti4O12 31
Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy 31
Electrical properties of MOCVD praseodymium oxide based MOS structures 31
Native point defects in CaCu3Ti4O12 31
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer 30
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 30
SCTS: scanning capacitance transient spectroscopy 30
Correlation between leakage current and ion-irradiation induced defects in 4H-SiC Schottky diodes 30
Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces 30
Carrier distribution in quantum nanostructures by scanning capacitance microscopy 29
Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2 29
Totale 4.689
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Categoria #
all - tutte 33.641
article - articoli 27.364
book - libri 361
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 897
Totale 62.263
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202435 0 0 0 0 0 0 0 0 3 0 23 9
2024/20253.008 18 23 264 168 529 26 20 40 44 48 987 841
2025/20265.718 326 627 582 922 977 181 1.018 354 269 180 112 170
2026/2027194 194 0 0 0 0 0 0 0 0 0 0 0
Totale 8.955