CNR Institutional Research Information System

FRANCHI, SECONDO
 Distribuzione geografica
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Continente #
AS - Asia 2.535
NA - Nord America 1.411
SA - Sud America 505
EU - Europa 304
AF - Africa 47
OC - Oceania 4
Totale 4.806
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Nazione #
US - Stati Uniti d'America 1.370
SG - Singapore 1.052
CN - Cina 660
BR - Brasile 423
VN - Vietnam 257
HK - Hong Kong 243
FR - Francia 136
KR - Corea 131
JP - Giappone 43
IN - India 37
IT - Italia 35
GB - Regno Unito 31
AR - Argentina 25
BD - Bangladesh 21
DE - Germania 20
CA - Canada 19
ID - Indonesia 18
IL - Israele 17
CO - Colombia 15
FI - Finlandia 15
CL - Cile 12
NL - Olanda 12
ZA - Sudafrica 11
RU - Federazione Russa 10
EC - Ecuador 9
ES - Italia 9
MX - Messico 9
UA - Ucraina 9
VE - Venezuela 9
MA - Marocco 8
SA - Arabia Saudita 7
EG - Egitto 6
IQ - Iraq 6
PK - Pakistan 6
TR - Turchia 6
UZ - Uzbekistan 6
DZ - Algeria 5
KZ - Kazakistan 5
PE - Perù 5
BE - Belgio 4
PL - Polonia 4
PY - Paraguay 4
TN - Tunisia 4
TW - Taiwan 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
JM - Giamaica 3
LT - Lituania 3
NP - Nepal 3
AL - Albania 2
AT - Austria 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
IE - Irlanda 2
KE - Kenya 2
NG - Nigeria 2
PA - Panama 2
PH - Filippine 2
SE - Svezia 2
TH - Thailandia 2
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
BY - Bielorussia 1
CG - Congo 1
CH - Svizzera 1
CI - Costa d'Avorio 1
DJ - Gibuti 1
DK - Danimarca 1
GN - Guinea 1
GR - Grecia 1
GT - Guatemala 1
HN - Honduras 1
JO - Giordania 1
LB - Libano 1
LV - Lettonia 1
LY - Libia 1
MW - Malawi 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
OM - Oman 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SN - Senegal 1
SR - Suriname 1
TG - Togo 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 4.806
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Città #
Santa Clara 754
Singapore 627
Hefei 262
Hong Kong 243
Seoul 129
Lauterbourg 122
San Jose 112
Ho Chi Minh City 107
Beijing 92
Ashburn 55
Los Angeles 54
Hanoi 53
Dallas 48
Buffalo 36
São Paulo 30
Tokyo 25
Minamishinagawa 15
Helsinki 14
Da Nang 11
Haiphong 11
Rio de Janeiro 11
Bengaluru 9
Campinas 9
Milan 9
The Dalles 9
Bauru 8
Belo Horizonte 8
Brasília 8
Frankfurt am Main 8
New York 8
Atlanta 7
Porto Alegre 7
Santiago 7
Thái Nguyên 7
Brooklyn 6
Hortolândia 6
Manchester 6
Tashkent 6
Toronto 6
Dhaka 5
Istanbul 5
London 5
Montreal 5
Piracicaba 5
Salvador 5
Carapicuíba 4
Casablanca 4
Chennai 4
Guangzhou 4
Nuremberg 4
Phoenix 4
Quận Một 4
Recife 4
Shanghai 4
Sorocaba 4
São José 4
São José do Rio Preto 4
Baghdad 3
Biên Hòa 3
Bắc Giang 3
Cajamar 3
Campina Grande 3
Can Tho 3
Cape Town 3
Chicago 3
Cincinnati 3
Curitiba 3
Duque de Caxias 3
Erbil 3
Fortaleza 3
Guarulhos 3
Guayaquil 3
Hyderabad 3
Jaipur 3
Jakarta 3
Jeddah 3
Johannesburg 3
Kingston 3
Lima 3
Nha Trang 3
Nova Iguaçu 3
Orem 3
Parma 3
Rome 3
Santiago de Cali 3
Việt Trì 3
Volta Redonda 3
Warsaw 3
Algiers 2
Aracaju 2
Araraquara 2
Araruama 2
Athens 2
Bagé 2
Bandung 2
Bangkok 2
Blida 2
Blumenau 2
Bogotá 2
Bragança Paulista 2
Totale 3.140
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Nome #
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb 81
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 71
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 67
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS 65
TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices 65
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 64
Molecular beam epitaxy: fundamentals, historical background and future prospects 64
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 59
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 59
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 59
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 59
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 55
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 54
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 52
Defects in nanostructures with ripened InAs/GaAs quantum dots 50
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 47
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer 47
InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation 46
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 46
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 46
Quantum dot nanostructures for 980 nm laser devices 45
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 45
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 44
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 44
Molecular beam epitaxy: an overview 43
Current instabilities in gaas/inas self-aggregated quantum dot structures 43
Electrical and structural characterization of InAs/InGaAs quantum dot structures 43
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 42
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures 42
Diffusion of Be in MBE-GaAs structures 41
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 41
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 41
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 41
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 39
Semiconductor nanostructures and Molecular Beam Epitaxy 39
Update of "Molecular Beam Epitaxy: An Overview" 39
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots 39
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 39
Optical and morphological properties of InAs and In0.5Ga0.5As self-assembled quantum dots embedded in AlGaAs confining layers 38
Strain-balanced quantum well structures for high efficiency solar cells 38
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window. 38
Strain-balanced quantum well structures based on III-V materials for high efficiency solar cells 38
Thermal activated carrier transfer between InAs quantum dots in very low density samples 38
Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots 37
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 37
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 37
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 37
Diffusion of beryllium in GaAs structures grown by MBE 36
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 36
Engineering of Quantum Dot Nanostructures for Photonic Devices 36
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 36
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 36
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 36
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As 35
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 35
Optical properties of engineered metamorphic QD structures for long wavelength operation 35
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths 35
Raman scattering in InAs/AlGaAs quantum dot nanostructures 35
Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots 35
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 34
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs 34
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 34
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs 33
Investigation of defects created by growth of InAs quantum dots in GaAs 33
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE 33
Deep levels in GaAs grown by atomic layer molecular beam epitaxy 33
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures 33
Quantum dot nanostructures and Molecular Beam Epitaxy 33
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 33
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 33
Purcell effect in micropillars with oxidized Bragg mirrors 33
Metamorphic self-assembled quantum dot nanostructures 32
Be diffusion in molecular beam epitaxy-grown GaAs structures 32
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy 32
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates 31
Deep level investigation on n-In0.35Ga0.65As/GaAs structures 31
Engineering of quantum dot nanostructures for 1.3 µm light emission 31
Photoreflectance spectroscopy of InAs self-assembled quantum dots 31
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering 30
Lateral conductivity in GaAs/InAs quantum dot structures 30
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 30
Self-assembled zero-dimensional semiconductor nanostructures 29
Quantum Dot Structures for Optoelectronic Applications 29
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 28
Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition 28
Deep levels in virtually unstrained InGaAs layers deposited on GaAs 27
Optical characterization of InAs/InGaAs QD for 1.55 µm emission 27
Optical properties of inas/alyga1-yas/gaas quantum dot structures 27
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures 27
Vertically stacked quantum dots grown by ALMBE and MBE 27
Quantum size and shape effects on the excited states of InxGa1-xAs quantum dots 27
Modeling of Be diffusion in gaas layers grown by MBE 27
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions 26
Study of dislocation distribution in graded InGaAs/GaAs buffer layers by XRD and DLTS 26
Rapporto tecnico di avanzamento R B 1.5 - Sottoprogetto B, OR B.1 (dicembre 2006 - dicembre 2007) Laboratorio MIST E-R 26
Engineering of quantum dot nanostructures for 980 nm emission 26
Optical switching of quantum states inside self-assembled quantum dots 26
LOW TEMPERATURE DX CENTER IONIZATION BY FORWARD BIASING AlGaAs SCHOTTKY BARRIERS 25
Self-aggregated InAs quantum dots in GaAs 25
EVIDENCE FOR NON-EQUILIBRIUM FREE ELECTRON DENSITY IN A1GaAs AT LOW TEMPERATURES 25
Totale 3.887
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Categoria #
all - tutte 16.127
article - articoli 10.206
book - libri 229
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 731
Totale 27.293
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202458 0 0 0 0 0 0 0 0 4 0 51 3
2024/20252.024 7 6 139 84 648 119 11 44 33 22 495 416
2025/20262.729 117 266 354 461 526 91 445 174 120 113 62 0
Totale 4.811