CNR Institutional Research Information System

FRANCHI, SECONDO
 Distribuzione geografica
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Continente #
AS - Asia 2.588
NA - Nord America 1.902
SA - Sud America 557
EU - Europa 363
AF - Africa 49
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 5
Totale 5.469
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Nazione #
US - Stati Uniti d'America 1.828
SG - Singapore 1.053
CN - Cina 661
BR - Brasile 438
VN - Vietnam 262
HK - Hong Kong 243
FR - Francia 138
KR - Corea 132
IT - Italia 67
BD - Bangladesh 48
JP - Giappone 43
GB - Regno Unito 42
IN - India 37
CO - Colombia 35
CA - Canada 31
AR - Argentina 27
DE - Germania 22
FI - Finlandia 21
ID - Indonesia 21
IL - Israele 17
VE - Venezuela 17
EC - Ecuador 16
CL - Cile 12
MX - Messico 12
NL - Olanda 12
ZA - Sudafrica 11
RU - Federazione Russa 10
ES - Italia 9
UA - Ucraina 9
MA - Marocco 8
IQ - Iraq 7
PK - Pakistan 7
SA - Arabia Saudita 7
BE - Belgio 6
CR - Costa Rica 6
DZ - Algeria 6
EG - Egitto 6
TR - Turchia 6
UZ - Uzbekistan 6
HN - Honduras 5
KZ - Kazakistan 5
NP - Nepal 5
PE - Perù 5
TT - Trinidad e Tobago 5
AU - Australia 4
PH - Filippine 4
PL - Polonia 4
PY - Paraguay 4
TH - Thailandia 4
TN - Tunisia 4
TW - Taiwan 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
DO - Repubblica Dominicana 3
JM - Giamaica 3
KE - Kenya 3
LT - Lituania 3
MY - Malesia 3
NI - Nicaragua 3
AT - Austria 2
EE - Estonia 2
GT - Guatemala 2
IE - Irlanda 2
JO - Giordania 2
NG - Nigeria 2
PA - Panama 2
PS - Palestinian Territory 2
RS - Serbia 2
SE - Svezia 2
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
CG - Congo 1
CH - Svizzera 1
CI - Costa d'Avorio 1
DJ - Gibuti 1
DK - Danimarca 1
GN - Guinea 1
GR - Grecia 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LB - Libano 1
LV - Lettonia 1
LY - Libia 1
MW - Malawi 1
NZ - Nuova Zelanda 1
OM - Oman 1
PT - Portogallo 1
QA - Qatar 1
SN - Senegal 1
SR - Suriname 1
SV - El Salvador 1
TG - Togo 1
UY - Uruguay 1
Totale 5.464
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Città #
Santa Clara 761
Singapore 628
Hefei 262
Hong Kong 243
San Jose 175
Seoul 130
Lauterbourg 122
Ho Chi Minh City 110
Ashburn 96
Beijing 92
Los Angeles 62
Hanoi 54
Dallas 52
Buffalo 40
São Paulo 31
Tokyo 25
Milan 15
Minamishinagawa 15
Helsinki 14
Brooklyn 12
Council Bluffs 12
Da Nang 11
Haiphong 11
Rio de Janeiro 11
Atlanta 10
Brasília 10
Chicago 10
Philadelphia 10
Bengaluru 9
Campinas 9
New York 9
Phoenix 9
The Dalles 9
Toronto 9
Bauru 8
Belo Horizonte 8
Frankfurt am Main 8
Manchester 8
Miami 8
Dhaka 7
Porto Alegre 7
Rome 7
Santiago 7
Thái Nguyên 7
Bogotá 6
Charlotte 6
Cincinnati 6
Hortolândia 6
Salvador 6
Tashkent 6
The Bronx 6
Calgary 5
Caracas 5
Cleveland 5
Guayaquil 5
Istanbul 5
London 5
Montreal 5
Piracicaba 5
San José 5
Shanghai 5
Cali 4
Carapicuíba 4
Casablanca 4
Chennai 4
Fortaleza 4
Guangzhou 4
Houston 4
Kingston 4
Laredo 4
Naples 4
Nuremberg 4
Queens 4
Quận Một 4
Recife 4
San Diego 4
Scottsdale 4
Sorocaba 4
São José 4
São José do Rio Preto 4
Tampere 4
Washington 4
Algiers 3
Baghdad 3
Bangkok 3
Birmingham 3
Biên Hòa 3
Boardman 3
Brussels 3
Bắc Giang 3
Cajamar 3
Campina Grande 3
Can Tho 3
Cape Town 3
Curitiba 3
Duque de Caxias 3
East Orange 3
Erbil 3
Fredericksburg 3
Guarulhos 3
Totale 3.383
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Nome #
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb 88
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 79
Molecular beam epitaxy: fundamentals, historical background and future prospects 77
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 75
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS 69
TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices 69
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 67
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 64
Diffusion of Be in MBE-GaAs structures 64
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 63
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 62
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 60
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 60
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 60
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 59
Molecular beam epitaxy: an overview 58
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 58
Defects in nanostructures with ripened InAs/GaAs quantum dots 55
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 55
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 53
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 52
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer 52
InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation 51
Quantum dot nanostructures for 980 nm laser devices 51
Current instabilities in gaas/inas self-aggregated quantum dot structures 51
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 50
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 50
Electrical and structural characterization of InAs/InGaAs quantum dot structures 48
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 48
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 48
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 46
Update of "Molecular Beam Epitaxy: An Overview" 46
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures 46
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 46
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots 45
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 44
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 44
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window. 44
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 44
Thermal activated carrier transfer between InAs quantum dots in very low density samples 44
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 42
Semiconductor nanostructures and Molecular Beam Epitaxy 42
Optical and morphological properties of InAs and In0.5Ga0.5As self-assembled quantum dots embedded in AlGaAs confining layers 42
Strain-balanced quantum well structures for high efficiency solar cells 42
Raman scattering in InAs/AlGaAs quantum dot nanostructures 42
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 42
Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots 41
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 41
Engineering of Quantum Dot Nanostructures for Photonic Devices 41
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths 41
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs 40
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 40
Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots 40
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs 39
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 39
Deep level investigation on n-In0.35Ga0.65As/GaAs structures 39
Be diffusion in molecular beam epitaxy-grown GaAs structures 39
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 39
Strain-balanced quantum well structures based on III-V materials for high efficiency solar cells 39
Investigation of defects created by growth of InAs quantum dots in GaAs 38
Optical properties of engineered metamorphic QD structures for long wavelength operation 38
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 38
Diffusion of beryllium in GaAs structures grown by MBE 37
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As 37
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 37
Purcell effect in micropillars with oxidized Bragg mirrors 37
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 36
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE 36
Deep levels in GaAs grown by atomic layer molecular beam epitaxy 36
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 36
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 36
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 35
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates 35
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures 35
Quantum dot nanostructures and Molecular Beam Epitaxy 35
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy 35
Metamorphic self-assembled quantum dot nanostructures 34
Quantum Dot Structures for Optoelectronic Applications 34
Deep levels in virtually unstrained InGaAs layers deposited on GaAs 34
Engineering of quantum dot nanostructures for 1.3 µm light emission 34
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 34
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering 33
Optical properties of inas/alyga1-yas/gaas quantum dot structures 33
Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition 33
Self-assembled zero-dimensional semiconductor nanostructures 32
Lateral conductivity in GaAs/InAs quantum dot structures 32
Photoreflectance spectroscopy of InAs self-assembled quantum dots 32
Modeling of Be diffusion in gaas layers grown by MBE 32
Optical characterization of InAs/InGaAs QD for 1.55 µm emission 31
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions 30
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures 30
Quantum size and shape effects on the excited states of InxGa1-xAs quantum dots 30
Optical switching of quantum states inside self-assembled quantum dots 30
Defects in nanostructures with ripened InAs/GaAs quantum dots 29
Study of dislocation distribution in graded InGaAs/GaAs buffer layers by XRD and DLTS 29
Rapporto tecnico di avanzamento R B 1.5 - Sottoprogetto B, OR B.1 (dicembre 2006 - dicembre 2007) Laboratorio MIST E-R 29
Self-aggregated InAs quantum dots in GaAs 29
EVIDENCE FOR NON-EQUILIBRIUM FREE ELECTRON DENSITY IN A1GaAs AT LOW TEMPERATURES 29
Optical switching of quantum states inside self-assembled quantum dots 29
LOW TEMPERATURE DX CENTER IONIZATION BY FORWARD BIASING AlGaAs SCHOTTKY BARRIERS 28
Totale 4.382
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Categoria #
all - tutte 19.954
article - articoli 12.632
book - libri 289
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 913
Totale 33.788
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202458 0 0 0 0 0 0 0 0 4 0 51 3
2024/20252.024 7 6 139 84 648 119 11 44 33 22 495 416
2025/20262.792 117 266 354 461 526 91 445 174 120 113 67 58
2026/2027595 125 138 332 0 0 0 0 0 0 0 0 0
Totale 5.469