CNR Institutional Research Information System

FRANCHI, SECONDO
 Distribuzione geografica
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Continente #
AS - Asia 2.553
NA - Nord America 1.525
SA - Sud America 505
EU - Europa 323
AF - Africa 47
OC - Oceania 5
Totale 4.958
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Nazione #
US - Stati Uniti d'America 1.472
SG - Singapore 1.053
CN - Cina 660
BR - Brasile 423
VN - Vietnam 257
HK - Hong Kong 243
FR - Francia 136
KR - Corea 131
IT - Italia 51
JP - Giappone 43
IN - India 37
BD - Bangladesh 36
GB - Regno Unito 31
AR - Argentina 25
CA - Canada 24
DE - Germania 20
ID - Indonesia 18
FI - Finlandia 17
IL - Israele 17
CO - Colombia 15
CL - Cile 12
NL - Olanda 12
ZA - Sudafrica 11
RU - Federazione Russa 10
EC - Ecuador 9
ES - Italia 9
MX - Messico 9
UA - Ucraina 9
VE - Venezuela 9
MA - Marocco 8
SA - Arabia Saudita 7
EG - Egitto 6
IQ - Iraq 6
PK - Pakistan 6
TR - Turchia 6
UZ - Uzbekistan 6
BE - Belgio 5
DZ - Algeria 5
KZ - Kazakistan 5
PE - Perù 5
AU - Australia 4
CR - Costa Rica 4
NP - Nepal 4
PL - Polonia 4
PY - Paraguay 4
TN - Tunisia 4
TW - Taiwan 4
AE - Emirati Arabi Uniti 3
JM - Giamaica 3
LT - Lituania 3
NI - Nicaragua 3
AL - Albania 2
AT - Austria 2
DO - Repubblica Dominicana 2
GT - Guatemala 2
IE - Irlanda 2
KE - Kenya 2
NG - Nigeria 2
PA - Panama 2
PH - Filippine 2
SE - Svezia 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
BY - Bielorussia 1
CG - Congo 1
CH - Svizzera 1
CI - Costa d'Avorio 1
DJ - Gibuti 1
DK - Danimarca 1
GN - Guinea 1
GR - Grecia 1
HN - Honduras 1
JO - Giordania 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LB - Libano 1
LV - Lettonia 1
LY - Libia 1
MW - Malawi 1
NZ - Nuova Zelanda 1
OM - Oman 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SN - Senegal 1
SR - Suriname 1
TG - Togo 1
UY - Uruguay 1
Totale 4.958
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Città #
Santa Clara 756
Singapore 628
Hefei 262
Hong Kong 243
Seoul 129
Lauterbourg 122
San Jose 112
Ho Chi Minh City 107
Beijing 92
Ashburn 78
Los Angeles 57
Hanoi 53
Dallas 50
Buffalo 38
São Paulo 30
Tokyo 25
Minamishinagawa 15
Helsinki 14
Da Nang 11
Haiphong 11
Rio de Janeiro 11
Milan 10
Bengaluru 9
Campinas 9
The Dalles 9
Atlanta 8
Bauru 8
Belo Horizonte 8
Brasília 8
Brooklyn 8
Frankfurt am Main 8
New York 8
Porto Alegre 7
Santiago 7
Thái Nguyên 7
Hortolândia 6
Manchester 6
Rome 6
Tashkent 6
Toronto 6
Chicago 5
Dhaka 5
Istanbul 5
London 5
Miami 5
Montreal 5
Piracicaba 5
Salvador 5
Carapicuíba 4
Casablanca 4
Chennai 4
Guangzhou 4
Kingston 4
Nuremberg 4
Phoenix 4
Quận Một 4
Recife 4
San Diego 4
Shanghai 4
Sorocaba 4
São José 4
São José do Rio Preto 4
The Bronx 4
Baghdad 3
Biên Hòa 3
Boardman 3
Bắc Giang 3
Cajamar 3
Calgary 3
Campina Grande 3
Can Tho 3
Cape Town 3
Cincinnati 3
Curitiba 3
Duque de Caxias 3
Erbil 3
Fortaleza 3
Guarulhos 3
Guayaquil 3
Hyderabad 3
Independence 3
Jacksonville 3
Jaipur 3
Jakarta 3
Jeddah 3
Johannesburg 3
Lima 3
Louisville 3
Managua 3
Naples 3
Nha Trang 3
Nova Iguaçu 3
Orem 3
Palermo 3
Parma 3
San José 3
Santiago de Cali 3
Việt Trì 3
Volta Redonda 3
Warsaw 3
Totale 3.199
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Nome #
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb 82
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 72
Molecular beam epitaxy: fundamentals, historical background and future prospects 72
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 67
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS 66
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 65
TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices 65
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 60
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 60
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 59
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 59
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 56
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 56
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 55
Diffusion of Be in MBE-GaAs structures 54
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 54
Defects in nanostructures with ripened InAs/GaAs quantum dots 52
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 52
Molecular beam epitaxy: an overview 50
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 49
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer 49
InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation 48
Quantum dot nanostructures for 980 nm laser devices 47
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 46
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 46
Electrical and structural characterization of InAs/InGaAs quantum dot structures 46
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 46
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 45
Current instabilities in gaas/inas self-aggregated quantum dot structures 45
Update of "Molecular Beam Epitaxy: An Overview" 44
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 44
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 43
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 43
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures 42
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window. 41
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 41
Thermal activated carrier transfer between InAs quantum dots in very low density samples 41
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 40
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots 40
Semiconductor nanostructures and Molecular Beam Epitaxy 39
Engineering of Quantum Dot Nanostructures for Photonic Devices 39
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 39
Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots 38
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 38
Optical and morphological properties of InAs and In0.5Ga0.5As self-assembled quantum dots embedded in AlGaAs confining layers 38
Strain-balanced quantum well structures for high efficiency solar cells 38
Strain-balanced quantum well structures based on III-V materials for high efficiency solar cells 38
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 38
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 37
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 37
Optical properties of engineered metamorphic QD structures for long wavelength operation 37
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 37
Raman scattering in InAs/AlGaAs quantum dot nanostructures 37
Diffusion of beryllium in GaAs structures grown by MBE 36
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths 36
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 36
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As 35
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs 35
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 35
Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots 35
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 35
Investigation of defects created by growth of InAs quantum dots in GaAs 34
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 34
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs 34
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 34
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures 34
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE 33
Deep levels in GaAs grown by atomic layer molecular beam epitaxy 33
Quantum dot nanostructures and Molecular Beam Epitaxy 33
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 33
Purcell effect in micropillars with oxidized Bragg mirrors 33
Metamorphic self-assembled quantum dot nanostructures 32
Be diffusion in molecular beam epitaxy-grown GaAs structures 32
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy 32
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates 31
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering 31
Quantum Dot Structures for Optoelectronic Applications 31
Deep level investigation on n-In0.35Ga0.65As/GaAs structures 31
Engineering of quantum dot nanostructures for 1.3 µm light emission 31
Photoreflectance spectroscopy of InAs self-assembled quantum dots 31
Self-assembled zero-dimensional semiconductor nanostructures 30
Lateral conductivity in GaAs/InAs quantum dot structures 30
Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition 30
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 30
Deep levels in virtually unstrained InGaAs layers deposited on GaAs 29
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 28
Optical switching of quantum states inside self-assembled quantum dots 28
Modeling of Be diffusion in gaas layers grown by MBE 28
Optical characterization of InAs/InGaAs QD for 1.55 µm emission 27
Optical properties of inas/alyga1-yas/gaas quantum dot structures 27
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures 27
Vertically stacked quantum dots grown by ALMBE and MBE 27
Quantum size and shape effects on the excited states of InxGa1-xAs quantum dots 27
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions 26
Study of dislocation distribution in graded InGaAs/GaAs buffer layers by XRD and DLTS 26
Rapporto tecnico di avanzamento R B 1.5 - Sottoprogetto B, OR B.1 (dicembre 2006 - dicembre 2007) Laboratorio MIST E-R 26
Engineering of quantum dot nanostructures for 980 nm emission 26
Optical switching of quantum states inside self-assembled quantum dots 26
Carrier thermal escape and retrapping in self-assembled quantum dots 25
Defects in nanostructures with ripened InAs/GaAs quantum dots 25
Totale 4.020
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Categoria #
all - tutte 17.763
article - articoli 11.239
book - libri 247
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 815
Totale 30.064
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202458 0 0 0 0 0 0 0 0 4 0 51 3
2024/20252.024 7 6 139 84 648 119 11 44 33 22 495 416
2025/20262.792 117 266 354 461 526 91 445 174 120 113 67 58
2026/202789 89 0 0 0 0 0 0 0 0 0 0 0
Totale 4.963