CNR Institutional Research Information System

FRANCHI, SECONDO
 Distribuzione geografica
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Continente #
AS - Asia 148
NA - Nord America 56
EU - Europa 3
Totale 207
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Nazione #
SG - Singapore 92
US - Stati Uniti d'America 56
CN - Cina 34
KR - Corea 22
IT - Italia 2
NL - Olanda 1
Totale 207
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Città #
Singapore 71
Santa Clara 25
Seoul 22
Guangzhou 3
Maranello 2
Amsterdam 1
Forest City 1
Totale 125
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Nome #
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 5
Defects in nanostructures with ripened InAs/GaAs quantum dots 4
Molecular beam epitaxy: an overview 4
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 4
Molecular beam epitaxy: fundamentals, historical background and future prospects 4
Semiconductor nanostructures and Molecular Beam Epitaxy 4
Engineering of Quantum Dot Nanostructures for Photonic Devices 4
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions 4
Engineering of quantum dot nanostructures for 1.3 µm light emission 4
Vertically stacked quantum dots grown by ALMBE and MBE 4
Update of "Molecular Beam Epitaxy: An Overview" 4
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 3
Quantum dot nanostructures for 980 nm laser devices 3
Optical properties of engineered metamorphic QD structures for long wavelength operation 3
Optical and morphological properties of InAs and In0.5Ga0.5As self-assembled quantum dots embedded in AlGaAs confining layers 3
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 3
Current instabilities in gaas/inas self-aggregated quantum dot structures 3
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 3
Engineering of quantum dot nanostructures for 980 nm emission 3
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 3
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 3
Strain-balanced quantum well structures based on III-V materials for high efficiency solar cells 3
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 3
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS 2
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 2
InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation 2
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 2
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 2
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 2
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs 2
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 2
Electronic coupling effects on the optical properties and carrier dynamics of inas quantum dots 2
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 2
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 2
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 2
Strain Mapping From HRTEM Images Of Quantum Dots Structures And Comparison With FEM Simulations 2
Strain-balanced quantum well structures for high efficiency solar cells 2
Lateral conductivity in GaAs/InAs quantum dot structures 2
Optical characterization of InAs/InGaAs QD for 1.55 µm emission 2
Study of dislocation distribution in graded InGaAs/GaAs buffer layers by XRD and DLTS 2
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 2
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 2
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 2
Optical properties of inas/alyga1-yas/gaas quantum dot structures 2
Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots 2
Deep level investigation on n-In0.35Ga0.65As/GaAs structures 2
Be diffusion in molecular beam epitaxy-grown GaAs structures 2
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures 2
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer 2
Hydrogenation of strain engineered InAs/InxGa1-xAs quantum dots 2
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy 2
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 2
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 2
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots 2
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 2
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 2
Photoluminescence of Strain-Engineered InAs/InGaAs/GaAs Quantum Dots in High Magnetic Fields 2
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 2
Thermal activated carrier transfer between InAs quantum dots in very low density samples 2
Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures 2
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb 1
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 1
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 1
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 1
Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots 1
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 1
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 1
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As 1
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 1
Shallow and deep levels in GaAs grown by atomic layer MBE 1
Diffusion of Be in MBE-GaAs structures 1
Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance 1
Investigation of defects created by growth of InAs quantum dots in GaAs 1
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE 1
Deep levels in GaAs grown by atomic layer molecular beam epitaxy 1
Metamorphic self-assembled quantum dot nanostructures 1
Modelling of Be diffusion in GaAs layers grown by MBE 1
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 1
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs 1
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates 1
Defects in nanostructures with ripened InAs/GaAs quantum dots 1
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering 1
Self-assembled zero-dimensional semiconductor nanostructures 1
Quantum Dot Structures for Optoelectronic Applications 1
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 1
Size quantization patterns in self-assembled InAs/GaAs quantum dots 1
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 1
Deep levels in virtually unstrained InGaAs layers deposited on GaAs 1
Precise control of charged excitons via impurity related related absorption 1
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures 1
LOW TEMPERATURE DX CENTER IONIZATION BY FORWARD BIASING AlGaAs SCHOTTKY BARRIERS 1
Rapporto tecnico di avanzamento R B 1.5 - Sottoprogetto B, OR B.1 (dicembre 2006 - dicembre 2007) Laboratorio MIST E-R 1
Quantum dot nanostructures and Molecular Beam Epitaxy 1
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths 1
Purcell Effect in Micropillars with Oxidized Bragg Mirrors 1
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 1
Raman scattering in InAs/AlGaAs quantum dot nanostructures 1
Passivation of Shallow and Deep Levels by Hydrogen Plasma Exposure in AlGaAs Grown by Molecular Beam Epitaxy 1
Electrical and structural characterization of InAs/InGaAs quantum dot structures 1
Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition 1
Totale 195
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Categoria #
all - tutte 2.002
article - articoli 1.254
book - libri 34
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 89
Totale 3.379
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202458 0 0 0 0 0 0 0 0 4 0 51 3
2024/2025149 7 6 136 0 0 0 0 0 0 0 0 0
Totale 207