CNR Institutional Research Information System

FRANCHI, SECONDO
 Distribuzione geografica
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Continente #
AS - Asia 2.588
NA - Nord America 2.053
SA - Sud America 557
EU - Europa 379
AF - Africa 49
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 5
Totale 5.636
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Nazione #
US - Stati Uniti d'America 1.978
SG - Singapore 1.053
CN - Cina 661
BR - Brasile 438
VN - Vietnam 262
HK - Hong Kong 243
FR - Francia 138
KR - Corea 132
IT - Italia 76
BD - Bangladesh 48
GB - Regno Unito 45
JP - Giappone 43
IN - India 37
CO - Colombia 35
CA - Canada 31
AR - Argentina 27
FI - Finlandia 23
DE - Germania 22
ID - Indonesia 21
IL - Israele 17
VE - Venezuela 17
EC - Ecuador 16
CL - Cile 12
MX - Messico 12
NL - Olanda 12
ZA - Sudafrica 11
RU - Federazione Russa 10
ES - Italia 9
UA - Ucraina 9
MA - Marocco 8
IQ - Iraq 7
PK - Pakistan 7
SA - Arabia Saudita 7
BE - Belgio 6
CR - Costa Rica 6
DZ - Algeria 6
EG - Egitto 6
HN - Honduras 6
TR - Turchia 6
UZ - Uzbekistan 6
KZ - Kazakistan 5
NP - Nepal 5
PE - Perù 5
TT - Trinidad e Tobago 5
AU - Australia 4
EE - Estonia 4
PH - Filippine 4
PL - Polonia 4
PY - Paraguay 4
TH - Thailandia 4
TN - Tunisia 4
TW - Taiwan 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
DO - Repubblica Dominicana 3
JM - Giamaica 3
KE - Kenya 3
LT - Lituania 3
MY - Malesia 3
NI - Nicaragua 3
AT - Austria 2
GT - Guatemala 2
IE - Irlanda 2
JO - Giordania 2
NG - Nigeria 2
PA - Panama 2
PS - Palestinian Territory 2
RS - Serbia 2
SE - Svezia 2
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
CG - Congo 1
CH - Svizzera 1
CI - Costa d'Avorio 1
DJ - Gibuti 1
DK - Danimarca 1
GN - Guinea 1
GR - Grecia 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LB - Libano 1
LV - Lettonia 1
LY - Libia 1
MW - Malawi 1
NZ - Nuova Zelanda 1
OM - Oman 1
PT - Portogallo 1
QA - Qatar 1
SN - Senegal 1
SR - Suriname 1
SV - El Salvador 1
TG - Togo 1
UY - Uruguay 1
Totale 5.631
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Città #
Santa Clara 762
Singapore 628
Hefei 262
Hong Kong 243
San Jose 175
Seoul 130
Lauterbourg 122
Ho Chi Minh City 110
Ashburn 100
Beijing 92
Council Bluffs 67
Los Angeles 63
Hanoi 54
Dallas 52
Buffalo 40
São Paulo 31
Tokyo 25
Milan 16
Minamishinagawa 15
Helsinki 14
Atlanta 13
Brooklyn 12
Da Nang 11
Haiphong 11
Rio de Janeiro 11
Brasília 10
Chicago 10
Philadelphia 10
Bengaluru 9
Campinas 9
New York 9
Phoenix 9
The Dalles 9
Toronto 9
Bauru 8
Belo Horizonte 8
Frankfurt am Main 8
Manchester 8
Miami 8
Rome 8
Dhaka 7
Porto Alegre 7
Santiago 7
Thái Nguyên 7
Bogotá 6
Charlotte 6
Cincinnati 6
Hortolândia 6
Naples 6
Salvador 6
Tashkent 6
The Bronx 6
Calgary 5
Caracas 5
Cleveland 5
Guayaquil 5
Istanbul 5
London 5
Montreal 5
Piracicaba 5
San José 5
Shanghai 5
Cali 4
Carapicuíba 4
Casablanca 4
Chennai 4
Fortaleza 4
Guangzhou 4
Houston 4
Kingston 4
Laredo 4
Nuremberg 4
Palermo 4
Queens 4
Quận Một 4
Recife 4
San Diego 4
Scottsdale 4
Sorocaba 4
São José 4
São José do Rio Preto 4
Tampere 4
Washington 4
Algiers 3
Baghdad 3
Bangkok 3
Birmingham 3
Biên Hòa 3
Boardman 3
Brussels 3
Bắc Giang 3
Cajamar 3
Campina Grande 3
Can Tho 3
Cape Town 3
Curitiba 3
Duque de Caxias 3
East Orange 3
Erbil 3
Fredericksburg 3
Totale 3.452
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Nome #
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb 90
Engineering of quantum dot structures for light emission in the spectral windows of photonic interest 81
Molecular beam epitaxy: fundamentals, historical background and future prospects 78
Influence of growth temperature and hydrogen back-pressure on the incorporation of impurities in MBE-GaAs 75
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS 70
TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices 70
Diffusion of Be in MBE-GaAs structures 68
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 67
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 66
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures 65
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 64
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 63
Nanostrutture a punti quantici per laser per comunicazioni su fibra ottica 61
Molecular beam epitaxy: an overview 61
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 60
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 60
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 59
Defects in nanostructures with ripened InAs/GaAs quantum dots 57
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 56
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer 55
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 54
Current instabilities in gaas/inas self-aggregated quantum dot structures 54
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 54
InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation 52
Quantum dot nanostructures for 980 nm laser devices 52
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 52
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 51
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 50
Electrical and structural characterization of InAs/InGaAs quantum dot structures 49
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 49
Update of "Molecular Beam Epitaxy: An Overview" 48
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots 48
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 48
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 47
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures 47
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM 46
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window. 46
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 46
Thermal activated carrier transfer between InAs quantum dots in very low density samples 46
Optical and morphological properties of InAs and In0.5Ga0.5As self-assembled quantum dots embedded in AlGaAs confining layers 45
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 44
Semiconductor nanostructures and Molecular Beam Epitaxy 44
Engineering of Quantum Dot Nanostructures for Photonic Devices 43
Raman scattering in InAs/AlGaAs quantum dot nanostructures 43
Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots 42
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 42
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 42
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs 42
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs 42
Strain-balanced quantum well structures for high efficiency solar cells 42
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths 42
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates 42
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 41
Deep level investigation on n-In0.35Ga0.65As/GaAs structures 41
Be diffusion in molecular beam epitaxy-grown GaAs structures 41
Investigation of defects created by growth of InAs quantum dots in GaAs 40
Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots 40
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 40
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 40
Strain-balanced quantum well structures based on III-V materials for high efficiency solar cells 40
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As 39
Optical properties of engineered metamorphic QD structures for long wavelength operation 39
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 39
Diffusion of beryllium in GaAs structures grown by MBE 38
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 38
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 37
Purcell effect in micropillars with oxidized Bragg mirrors 37
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 36
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE 36
Deep levels in GaAs grown by atomic layer molecular beam epitaxy 36
Metamorphic self-assembled quantum dot nanostructures 36
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 36
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates 36
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 36
Quantum dot nanostructures and Molecular Beam Epitaxy 36
Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode 36
Deep levels in virtually unstrained InGaAs layers deposited on GaAs 35
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures 35
Engineering of quantum dot nanostructures for 1.3 µm light emission 35
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy 35
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering 34
Quantum Dot Structures for Optoelectronic Applications 34
Optical properties of inas/alyga1-yas/gaas quantum dot structures 34
Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition 34
Photoreflectance spectroscopy of InAs self-assembled quantum dots 34
Self-assembled zero-dimensional semiconductor nanostructures 33
Engineering of quantum dot nanostructures for 980 nm emission 33
Modeling of Be diffusion in gaas layers grown by MBE 33
Lateral conductivity in GaAs/InAs quantum dot structures 32
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions 32
Optical characterization of InAs/InGaAs QD for 1.55 µm emission 31
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures 31
Quantum size and shape effects on the excited states of InxGa1-xAs quantum dots 31
Self-aggregated InAs quantum dots in GaAs 31
EVIDENCE FOR NON-EQUILIBRIUM FREE ELECTRON DENSITY IN A1GaAs AT LOW TEMPERATURES 31
Study of dislocation distribution in graded InGaAs/GaAs buffer layers by XRD and DLTS 30
Rapporto tecnico di avanzamento R B 1.5 - Sottoprogetto B, OR B.1 (dicembre 2006 - dicembre 2007) Laboratorio MIST E-R 30
Vertically stacked quantum dots grown by ALMBE and MBE 30
Optical switching of quantum states inside self-assembled quantum dots 30
Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation 29
Totale 4.511
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Categoria #
all - tutte 20.449
article - articoli 12.936
book - libri 298
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 940
Totale 34.623
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202458 0 0 0 0 0 0 0 0 4 0 51 3
2024/20252.024 7 6 139 84 648 119 11 44 33 22 495 416
2025/20262.792 117 266 354 461 526 91 445 174 120 113 67 58
2026/2027762 125 138 355 144 0 0 0 0 0 0 0 0
Totale 5.636