CNR Institutional Research Information System

ATTOLINI, GIOVANNI
 Distribuzione geografica
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Continente #
AS - Asia 50
EU - Europa 6
NA - Nord America 5
Totale 61
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Nazione #
CN - Cina 25
SG - Singapore 13
KR - Corea 11
IT - Italia 6
US - Stati Uniti d'America 5
IN - India 1
Totale 61
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Città #
Guangzhou 16
Seoul 11
Singapore 8
Boardman 3
Guastalla 3
Bologna 2
Forest City 2
Totale 45
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Nome #
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 3
A comparative study of the morphology of 3C-SiC grown at different C/Si ratios 3
Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures 2
Aspetti generali della crescita epitassiale MOCVD 2
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 2
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films) 2
A silicon carbide nanowire field effect transistor for DNA detection 2
Vapour Phase Epitaxy 2
Tuning the radial structure of core-shell silicon carbide nanowires 2
UnExploDe: Portable Sensors for Unmanned Explosive Detection 2
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 2
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 1
Magnetic and structural characterization of the semiconductor FeIn2Se4 1
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 1
SiC NWs grown on silicon substrate using Fe as catalyst 1
TEM and SEM-CL studies of SiC Nanowires 1
Nuove tecnologie e strumenti per l'efficienza energerica e l'utilizzo delle fonti rinnovabili negli usi finali civili 1
A study of the morphology of 3C-SiC layers grown at different C/Si ratios 1
Growth of SiC NWs by vapor phase technique using Fe as catalyst 1
CBr4 as precursor for VPE growth of cubic silicon carbide 1
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications 1
SiC Nanostructures Toward Biomedical Applications and Its Future Challenges 1
βC-SiC/SiO2 core-shell nanowires studied by TEM and SEM-CL 1
A new growth method for the synthesis of 3C-SiC nanowires 1
Porphyrin conjugated SiC/SiOx nanowires for X-ray-excited photodynamic therapy 1
3C-SiC Nanowires functionalized with Porphyrins by Supersonic Molecular Beams for Photodynamic Therapy 1
Cytocompatible 3C-SiC/SiO2 core shell nanowires for bimodal cancer therapy 1
Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation (vol 2, pg 165, 2017) 1
Carbon-doped SiOx nanowires with a large yield of white emission 1
TEM and SEM-CL studies of SiC Nanowires 1
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 1
Functionalization of SiC nanowires by supersonic molecular beams for photodynamic therapy 1
Growth of germanium crystals by time-varing temperature profile, CVT methods 1
AFM morphological characterization and Raman study of germanium grown on (111)GaAs 1
Logic with memory: and gates made of organic and inorganic memristive devices 1
Structural Analysis of InGaP/GaAs Layers Grown by MOVPE 1
A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications. 1
Calcination effects on the crystal structure and magnetic properties of CoFe2O4 nanopowders synthesized by the coprecipitation method 1
Growth and characterization of FexMn1-xIn2Se4 (0 x 1) single crystals 1
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates 1
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 1
Growth and characterization of b-SiC and SiO2/b-SiC core-shell nanowires 1
Hydride vapour phase epitaxy growth and characterization of GaN layers 1
Epitaxial growth of germanium 1
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 1
Cubic SiC Nanowires: Growth, Characterization and Applications 1
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 1
The role of stoichiometric ratio on the very early growth stages of GaAs/Ge heterostructure 1
Totale 61
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Categoria #
all - tutte 2.622
article - articoli 1.292
book - libri 21
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 124
Totale 4.059
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202448 0 0 0 0 0 0 0 0 0 3 38 7
2024/202513 8 5 0 0 0 0 0 0 0 0 0 0
Totale 61