ATTOLINI, GIOVANNI
 Distribuzione geografica
Continente #
AS - Asia 4.370
NA - Nord America 2.680
SA - Sud America 914
EU - Europa 826
AF - Africa 89
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.886
Nazione #
US - Stati Uniti d'America 2.559
SG - Singapore 1.926
CN - Cina 879
BR - Brasile 758
VN - Vietnam 511
HK - Hong Kong 478
FR - Francia 261
KR - Corea 158
IT - Italia 141
IN - India 78
DE - Germania 77
NL - Olanda 72
GB - Regno Unito 70
BD - Bangladesh 65
JP - Giappone 65
AR - Argentina 60
CA - Canada 48
FI - Finlandia 42
ID - Indonesia 37
MX - Messico 32
IQ - Iraq 28
EC - Ecuador 24
IL - Israele 23
CO - Colombia 20
RU - Federazione Russa 20
ZA - Sudafrica 20
PK - Pakistan 18
PL - Polonia 18
AT - Austria 17
MA - Marocco 17
DZ - Algeria 16
TR - Turchia 16
PY - Paraguay 14
UA - Ucraina 11
VE - Venezuela 11
ES - Italia 10
BE - Belgio 9
CL - Cile 9
PH - Filippine 9
UZ - Uzbekistan 9
AE - Emirati Arabi Uniti 8
SE - Svezia 8
TT - Trinidad e Tobago 8
CZ - Repubblica Ceca 7
EG - Egitto 7
PE - Perù 7
AU - Australia 6
LT - Lituania 6
SA - Arabia Saudita 6
TN - Tunisia 6
AL - Albania 5
BO - Bolivia 5
CH - Svizzera 5
DO - Repubblica Dominicana 5
GR - Grecia 5
HR - Croazia 5
JM - Giamaica 5
JO - Giordania 5
NO - Norvegia 5
NP - Nepal 5
SK - Slovacchia (Repubblica Slovacca) 5
AZ - Azerbaigian 4
HN - Honduras 4
IE - Irlanda 4
LV - Lettonia 4
OM - Oman 4
PA - Panama 4
SN - Senegal 4
TW - Taiwan 4
UY - Uruguay 4
BB - Barbados 3
BG - Bulgaria 3
BH - Bahrain 3
CY - Cipro 3
ET - Etiopia 3
GE - Georgia 3
KE - Kenya 3
KG - Kirghizistan 3
MY - Malesia 3
NI - Nicaragua 3
PS - Palestinian Territory 3
PT - Portogallo 3
RO - Romania 3
AM - Armenia 2
AO - Angola 2
BW - Botswana 2
EE - Estonia 2
GA - Gabon 2
KH - Cambogia 2
KN - Saint Kitts e Nevis 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
PR - Porto Rico 2
SI - Slovenia 2
SR - Suriname 2
SY - Repubblica araba siriana 2
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BS - Bahamas 1
Totale 8.866
Città #
Singapore 1.171
Santa Clara 957
Hong Kong 467
Dallas 389
Hefei 341
San Jose 236
Lauterbourg 211
Ho Chi Minh City 185
Seoul 154
Beijing 146
Hanoi 125
Ashburn 119
Los Angeles 91
São Paulo 50
Buffalo 45
New York 45
Tokyo 35
Orem 34
Frankfurt am Main 29
Da Nang 26
Helsinki 24
Rio de Janeiro 24
Guangzhou 19
Minamishinagawa 19
Baghdad 17
Chennai 17
Curitiba 17
Milan 17
Brasília 16
Chicago 14
Phoenix 14
Haiphong 13
Montreal 13
Nuremberg 13
Poplar 13
Bengaluru 12
Brooklyn 12
Johannesburg 12
Parma 12
Porto Alegre 12
Warsaw 12
Dhaka 11
Hải Dương 11
London 11
Salvador 11
Turku 11
Council Bluffs 10
Goiânia 10
Manchester 10
Rome 10
Belo Horizonte 9
Biên Hòa 9
Boardman 9
Bologna 9
Düsseldorf 9
Guarulhos 9
Toronto 9
Brussels 8
Bắc Giang 8
Casablanca 8
Denver 8
Guayaquil 8
Mumbai 8
Paris 8
Tashkent 8
Thái Bình 8
Atlanta 7
Boston 7
Elk Grove Village 7
Fortaleza 7
Jakarta 7
Stockholm 7
Vienna 7
Caxias do Sul 6
Delhi 6
Lappeenranta 6
Maceió 6
Moscow 6
Praia Grande 6
Querétaro 6
Quito 6
Recife 6
Ribeirão Preto 6
Thái Nguyên 6
Uberlândia 6
Americana 5
Amman 5
Asunción 5
Belém 5
Bogotá 5
Buenos Aires 5
Bắc Ninh 5
Bến Tre 5
Catania 5
Criciúma 5
Hyderabad 5
Istanbul 5
João Pessoa 5
La Paz 5
Mexico City 5
Totale 5.604
Nome #
Growth of Germanium Crystals by Time-varying Temperature Profile, CVT Methods 109
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 94
Cubic Silicon Carbide Nanowires 88
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 86
Wettability of Silicon Carbide Nanowires 85
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration 84
Strain Evaluation in SiC MEMS Test Structures 80
BAGNABILITA DI SUPERFICI BASATE SUL CARBURO DI SILICIO 76
Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation (vol 2, pg 165, 2017) 74
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 74
Manuale di utilizzo - Reattore MOVPE 3 70
Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation 70
Germanium nanowires grown on Ge bulk crystals 68
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 68
SiC NWs grown on silicon substrate using Fe as catalyst 67
Silicon Carbide Nanowires 67
Vapour Phase Epitaxy 67
Growth of germanium crystals by time-varing temperature profile, CVT methods 67
Surface Functionalization of 3C-SiC Nanowires 66
Curvature and stress analysis in 3C-SiC layers grown on (001) and (111) Si substrates 65
Influence of the growth conditions on the properties of germanium epilayers grown by MOVPE on Si 63
Nanomechanical studies of doped InGaP/GaAs epilayers 62
The effect of feeding phase stoichiometry on the origin of crystal defects in hydride VPE InP layers 62
Osteoblast adhesion and response mediated by terminal -SH group charge surface of SiOxCy nanowires 62
Calcination effects on the crystal structure and magnetic properties of CoFe2O4 nanopowders synthesized by the coprecipitation method 62
Synthesis mechanism of SiC-SiO2 core/shell nanowires grown by chemical vapor deposition 62
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 61
beta-SiC NWs grown on patterned and MEMS silicon substrates 61
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 61
3C-SiC nanowires and layers grown on Si: attractive material for biosensor applications 60
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 60
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 59
A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications. 59
Magnetic ordering of Mn2GeS4 single crystals with olivine structure 59
Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE 57
TEM and SEM-CL studies of SiC Nanowires 57
Epitaxial germanium for photovoltaic or opto-electronic applications 56
Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers 55
Hydrogen plasma treatment confers enhanced bioactivity to silicon carbide-based nanowires promoting osteoblast adhesion 55
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 55
UnExploDe: Portable Sensors for Unmanned Explosive Detection 55
CBr4 as precursor for VPE growth of cubic silicon carbide 54
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films) 54
The effect of substrate type on SiC nanowire orientation 54
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
High-temperature magnetic coercivity of CNTs filled with multi-phase Febased nanoparticles 53
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 51
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 51
Carbon-doped SiOx nanowires with a large yield of white emission 51
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 50
Growth of SiC NWs by vapor phase technique using Fe as catalyst 49
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 49
Tuning the radial structure of core-shell silicon carbide nanowires 48
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 48
Cubic SiC Nanowires: Growth, Characterization and Applications 48
Epitaxial growth and Characterization of ternary and quaternary III-V semiconductors 47
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 47
High linear polarization of photoluminescence of GaInP epilayers at low temperature 47
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities 46
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers 46
Germanium: Epitaxy and its applications 46
Nuove tecnologie e strumenti per l'efficienza energerica e l'utilizzo delle fonti rinnovabili negli usi finali civili 45
ß-SiC NWs grown on patterned and MEMS silicon substrates 45
AFM morphological characterization and Raman study of germanium grown on (111)GaAs 45
Magnetic and structural characterization of the semiconductor FeIn2Se4 44
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 44
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 44
Porphyrin conjugated SiC/SiOx nanowires for X-ray-excited photodynamic therapy 43
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 42
Mechanical characterization of 3C-SiC grown on Si micromachined cantilever 42
Vapour phase growth and characterization of GaS 42
Functionalization of SiC nanowires by supersonic molecular beams for photodynamic therapy 42
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor 41
Logic with memory: and gates made of organic and inorganic memristive devices 41
CRISTALLI 40
Synthesis and characterization of 3C-SiC nanowires 40
3C-SiC nanowires luminescence enhancement by coating with a conformal oxides layer 40
Germanium homoepitaxial cells for thermophotovoltaic systems 39
Optical properties of hybrid T3Pyr/SiO2/3C-SiC nanowires 39
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 39
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide 39
Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films 39
MOVPE growth and characterization of heteroepitaxial germaniumon silicon using iBuGe as precursor 38
Cytocompatible 3C-SiC/SiO2 core shell nanowires for bimodal cancer therapy 38
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates 38
Influence of doping on the nanomechanical behavior of InGaP/Ge thin films 38
TEM and SEM-CL studies of SiC Nanowires 37
Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures 37
SiC Nanostructures Toward Biomedical Applications and Its Future Challenges 37
Epitaxial growth and electrical characterization of germanium 37
Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates 37
Cathodoluminescence characterization of beta-SiC nanowires and surface-related silicon dioxide 37
Epitaxial germanium for photovoltaic or opto-electronic applications 36
Aspetti generali della crescita epitassiale MOCVD 36
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor 36
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 35
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 35
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions 35
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 35
Homo and hetero epitaxy of Germanium using isobutylgermane 35
Totale 5.292
Categoria #
all - tutte 30.025
article - articoli 15.525
book - libri 202
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.394
Totale 47.146


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202448 0 0 0 0 0 0 0 0 0 3 38 7
2024/20253.316 8 12 263 162 831 203 62 112 76 106 794 687
2025/20265.580 243 810 585 829 1.037 204 758 292 295 316 159 52
Totale 8.944