CNR Institutional Research Information System

ATTOLINI, GIOVANNI
 Distribuzione geografica
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Continente #
AS - Asia 4.491
NA - Nord America 4.256
SA - Sud America 989
EU - Europa 983
AF - Africa 93
Continente sconosciuto - Info sul continente non disponibili 59
OC - Oceania 6
Totale 10.877
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Nazione #
US - Stati Uniti d'America 4.043
SG - Singapore 1.930
CN - Cina 884
BR - Brasile 785
VN - Vietnam 525
HK - Hong Kong 481
FR - Francia 265
IT - Italia 261
KR - Corea 158
BD - Bangladesh 116
CA - Canada 102
GB - Regno Unito 84
IN - India 80
DE - Germania 78
NL - Olanda 73
JP - Giappone 68
AR - Argentina 62
ID - Indonesia 49
CO - Colombia 44
FI - Finlandia 42
EC - Ecuador 36
MX - Messico 35
IQ - Iraq 28
IL - Israele 23
RU - Federazione Russa 21
ZA - Sudafrica 20
PK - Pakistan 19
PL - Polonia 18
VE - Venezuela 18
AT - Austria 17
MA - Marocco 17
PH - Filippine 17
DZ - Algeria 16
TR - Turchia 16
PY - Paraguay 15
JM - Giamaica 13
ES - Italia 12
UA - Ucraina 12
MY - Malesia 11
BE - Belgio 10
CL - Cile 10
CR - Costa Rica 10
TT - Trinidad e Tobago 10
AE - Emirati Arabi Uniti 9
HN - Honduras 9
UZ - Uzbekistan 9
SE - Svezia 8
CH - Svizzera 7
CZ - Repubblica Ceca 7
EG - Egitto 7
JO - Giordania 7
LT - Lituania 7
PE - Perù 7
SA - Arabia Saudita 7
AL - Albania 6
AU - Australia 6
BO - Bolivia 6
EE - Estonia 6
NI - Nicaragua 6
TN - Tunisia 6
BH - Bahrain 5
DO - Repubblica Dominicana 5
GR - Grecia 5
HR - Croazia 5
NO - Norvegia 5
NP - Nepal 5
SK - Slovacchia (Repubblica Slovacca) 5
AZ - Azerbaigian 4
BG - Bulgaria 4
IE - Irlanda 4
LV - Lettonia 4
OM - Oman 4
PA - Panama 4
PT - Portogallo 4
SC - Seychelles 4
SN - Senegal 4
SV - El Salvador 4
TW - Taiwan 4
UY - Uruguay 4
BB - Barbados 3
CY - Cipro 3
ET - Etiopia 3
GE - Georgia 3
KE - Kenya 3
KG - Kirghizistan 3
PS - Palestinian Territory 3
RO - Romania 3
TH - Thailandia 3
AM - Armenia 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BW - Botswana 2
GA - Gabon 2
GT - Guatemala 2
HU - Ungheria 2
KH - Cambogia 2
KN - Saint Kitts e Nevis 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
Totale 10.788
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Città #
Singapore 1.173
Santa Clara 979
Hong Kong 467
Dallas 399
San Jose 347
Hefei 341
Council Bluffs 236
Lauterbourg 211
Ashburn 189
Ho Chi Minh City 188
Seoul 154
Beijing 147
Hanoi 127
Los Angeles 106
Princeton 66
New York 54
Buffalo 52
São Paulo 51
Abbeville 43
Tokyo 37
Toronto 37
Orem 34
Milan 33
Da Nang 30
Chicago 29
Frankfurt am Main 29
Phoenix 27
Helsinki 24
Rio de Janeiro 24
Atlanta 22
Brasília 22
Rome 22
Brooklyn 19
Curitiba 19
Guangzhou 19
Minamishinagawa 19
Baghdad 17
Chennai 17
Las Vegas 17
Montreal 16
Houston 15
Dhaka 14
Bologna 13
Haiphong 13
Nuremberg 13
Parma 13
Poplar 13
Quito 13
Bengaluru 12
Johannesburg 12
London 12
Manchester 12
Miami 12
Philadelphia 12
Porto Alegre 12
Warsaw 12
Denver 11
Hải Dương 11
Salvador 11
San Antonio 11
Turku 11
Washington 11
Bogotá 10
Goiânia 10
Guayaquil 10
Pisa 10
Belo Horizonte 9
Biên Hòa 9
Boardman 9
Düsseldorf 9
Guarulhos 9
Naples 9
Belém 8
Boston 8
Brussels 8
Bắc Giang 8
Casablanca 8
Florence 8
Lima 8
Mumbai 8
Paris 8
Queens 8
Tashkent 8
Thái Bình 8
Catania 7
Charlotte 7
Elk Grove Village 7
Fortaleza 7
Jakarta 7
Kingston 7
Kuala Lumpur 7
Medellín 7
New Orleans 7
Quảng Ngãi 7
San José 7
Stockholm 7
Vienna 7
Albuquerque 6
Americana 6
Amman 6
Totale 6.411
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Nome #
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 138
Growth of Germanium Crystals by Time-varying Temperature Profile, CVT Methods 127
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 96
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration 95
Cubic Silicon Carbide Nanowires 94
Wettability of Silicon Carbide Nanowires 93
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 90
BAGNABILITA DI SUPERFICI BASATE SUL CARBURO DI SILICIO 90
Strain Evaluation in SiC MEMS Test Structures 87
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 84
SiC NWs grown on silicon substrate using Fe as catalyst 82
Germanium nanowires grown on Ge bulk crystals 82
Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation (vol 2, pg 165, 2017) 81
beta-SiC NWs grown on patterned and MEMS silicon substrates 80
Vapour Phase Epitaxy 79
Growth of germanium crystals by time-varing temperature profile, CVT methods 79
Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation 78
Osteoblast adhesion and response mediated by terminal -SH group charge surface of SiOxCy nanowires 76
Manuale di utilizzo - Reattore MOVPE 3 74
Curvature and stress analysis in 3C-SiC layers grown on (001) and (111) Si substrates 74
Silicon Carbide Nanowires 74
A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications. 73
Synthesis mechanism of SiC-SiO2 core/shell nanowires grown by chemical vapor deposition 73
3C-SiC nanowires and layers grown on Si: attractive material for biosensor applications 72
Calcination effects on the crystal structure and magnetic properties of CoFe2O4 nanopowders synthesized by the coprecipitation method 71
Surface Functionalization of 3C-SiC Nanowires 70
Influence of the growth conditions on the properties of germanium epilayers grown by MOVPE on Si 70
Nanomechanical studies of doped InGaP/GaAs epilayers 69
Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE 69
Hydrogen plasma treatment confers enhanced bioactivity to silicon carbide-based nanowires promoting osteoblast adhesion 69
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 69
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 69
UnExploDe: Portable Sensors for Unmanned Explosive Detection 69
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 68
The effect of substrate type on SiC nanowire orientation 67
Magnetic ordering of Mn2GeS4 single crystals with olivine structure 67
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 65
The effect of feeding phase stoichiometry on the origin of crystal defects in hydride VPE InP layers 65
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films) 65
TEM and SEM-CL studies of SiC Nanowires 65
CBr4 as precursor for VPE growth of cubic silicon carbide 64
Growth of SiC NWs by vapor phase technique using Fe as catalyst 63
Epitaxial germanium for photovoltaic or opto-electronic applications 63
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 63
Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers 62
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 61
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 61
Carbon-doped SiOx nanowires with a large yield of white emission 61
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 60
High-temperature magnetic coercivity of CNTs filled with multi-phase Febased nanoparticles 60
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 60
Tuning the radial structure of core-shell silicon carbide nanowires 60
Germanium: Epitaxy and its applications 60
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers 59
Cubic SiC Nanowires: Growth, Characterization and Applications 59
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 58
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 58
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 57
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 57
Epitaxial growth and Characterization of ternary and quaternary III-V semiconductors 55
Optical properties of hybrid T3Pyr/SiO2/3C-SiC nanowires 55
High linear polarization of photoluminescence of GaInP epilayers at low temperature 55
Nuove tecnologie e strumenti per l'efficienza energerica e l'utilizzo delle fonti rinnovabili negli usi finali civili 54
Functionalization of SiC nanowires by supersonic molecular beams for photodynamic therapy 54
Porphyrin conjugated SiC/SiOx nanowires for X-ray-excited photodynamic therapy 52
Magnetic and structural characterization of the semiconductor FeIn2Se4 51
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 51
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities 51
Vapour phase growth and characterization of GaS 51
ß-SiC NWs grown on patterned and MEMS silicon substrates 51
Logic with memory: and gates made of organic and inorganic memristive devices 51
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor 50
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor 50
Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates 50
Mechanical characterization of 3C-SiC grown on Si micromachined cantilever 49
SiC Nanostructures Toward Biomedical Applications and Its Future Challenges 48
3C-SiC nanowires luminescence enhancement by coating with a conformal oxides layer 48
AFM morphological characterization and Raman study of germanium grown on (111)GaAs 48
Influence of doping on the nanomechanical behavior of InGaP/Ge thin films 48
Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films 48
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 47
Germanium homoepitaxial cells for thermophotovoltaic systems 47
Epitaxial growth and electrical characterization of germanium 47
CRISTALLI 46
MOVPE growth and characterization of heteroepitaxial germaniumon silicon using iBuGe as precursor 46
Cytocompatible 3C-SiC/SiO2 core shell nanowires for bimodal cancer therapy 46
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates 46
Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures 45
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide 45
Synthesis and characterization of 3C-SiC nanowires 44
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems 44
TEM and SEM-CL studies of SiC Nanowires 44
Epitaxial germanium for photovoltaic or opto-electronic applications 44
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 44
Cathodoluminescence characterization of beta-SiC nanowires and surface-related silicon dioxide 44
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 43
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method 43
Hydride vapour phase epitaxy growth and characterization of GaN layers 43
βC-SiC/SiO2 core-shell nanowires studied by TEM and SEM-CL 42
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 42
Totale 6.266
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Categoria #
all - tutte 37.452
article - articoli 19.284
book - libri 266
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.741
Totale 58.743
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202448 0 0 0 0 0 0 0 0 0 3 38 7
2024/20253.316 8 12 263 162 831 203 62 112 76 106 794 687
2025/20265.651 243 810 585 829 1.037 204 758 292 295 316 159 123
2026/20271.862 322 233 675 632 0 0 0 0 0 0 0 0
Totale 10.877