CNR Institutional Research Information System

PRIVITERA, STEFANIA MARIA SERENA
 Distribuzione geografica
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Continente #
AS - Asia 1.858
NA - Nord America 1.124
EU - Europa 559
SA - Sud America 343
Continente sconosciuto - Info sul continente non disponibili 149
AF - Africa 29
OC - Oceania 3
Totale 4.065
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Nazione #
US - Stati Uniti d'America 1.064
SG - Singapore 813
CN - Cina 413
BR - Brasile 270
VN - Vietnam 199
IT - Italia 183
HK - Hong Kong 180
FR - Francia 126
KR - Corea 65
NL - Olanda 57
JP - Giappone 46
GB - Regno Unito 38
FI - Finlandia 36
DE - Germania 34
BD - Bangladesh 33
AR - Argentina 28
IN - India 28
CA - Canada 24
CO - Colombia 16
IE - Irlanda 15
MX - Messico 15
PL - Polonia 14
ID - Indonesia 13
IQ - Iraq 13
ZA - Sudafrica 13
UA - Ucraina 9
TR - Turchia 7
TT - Trinidad e Tobago 7
AT - Austria 6
ES - Italia 6
IL - Israele 6
LT - Lituania 6
RU - Federazione Russa 6
AE - Emirati Arabi Uniti 5
EC - Ecuador 5
JM - Giamaica 5
PE - Perù 5
PK - Pakistan 5
PY - Paraguay 5
VE - Venezuela 5
CL - Cile 4
MA - Marocco 4
SE - Svezia 4
TN - Tunisia 4
TW - Taiwan 4
AL - Albania 3
AU - Australia 3
CR - Costa Rica 3
KE - Kenya 3
KZ - Kazakistan 3
PH - Filippine 3
PT - Portogallo 3
SA - Arabia Saudita 3
TH - Thailandia 3
UY - Uruguay 3
AZ - Azerbaigian 2
BG - Bulgaria 2
BO - Bolivia 2
CI - Costa d'Avorio 2
EG - Egitto 2
GE - Georgia 2
GR - Grecia 2
JO - Giordania 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MK - Macedonia 2
NP - Nepal 2
PA - Panama 2
SI - Slovenia 2
UZ - Uzbekistan 2
BA - Bosnia-Erzegovina 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
LY - Libia 1
MM - Myanmar 1
NI - Nicaragua 1
QA - Qatar 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 3.916
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Città #
Singapore 474
Santa Clara 308
Hong Kong 178
San Jose 146
Hefei 128
Beijing 120
Ashburn 91
Lauterbourg 87
Seoul 64
Ho Chi Minh City 63
Hanoi 52
Los Angeles 46
Dallas 45
Tokyo 39
Cavallino 36
São Paulo 35
Catania 18
Lappeenranta 16
Dublin 15
Frankfurt am Main 15
Milan 15
New York 15
Amsterdam 13
Casalnuovo di Napoli 13
Helsinki 13
Da Nang 12
Rio de Janeiro 12
Council Bluffs 11
Orem 11
Palermo 10
Warsaw 10
Haiphong 8
Atlanta 7
Biên Hòa 7
Brooklyn 7
Buffalo 7
Chennai 7
Guangzhou 7
Johannesburg 7
London 7
Miami 7
Rome 7
Chicago 6
Limbiate 6
Mumbai 6
Porto Alegre 6
Thái Nguyên 6
Turku 6
Baghdad 5
Bengaluru 5
Can Tho 5
Dayton 5
Hải Dương 5
Minamishinagawa 5
Montreal 5
Munich 5
Philadelphia 5
Poplar 5
Roubaix 5
Seattle 5
Bogotá 4
Boston 4
City of London 4
Curitiba 4
Düsseldorf 4
Figino 4
Grand Rapids 4
Mexico City 4
Newark 4
Nha Trang 4
Nuremberg 4
Ribeirão Preto 4
Salvador 4
San Francisco 4
Shenzhen 4
Vienna 4
Ankara 3
Aracaju 3
Athens 3
Belo Horizonte 3
Bento Gonçalves 3
Bologna 3
Brasília 3
Buenos Aires 3
Campo Grande 3
Cape Town 3
Charlotte 3
Detroit 3
Dhaka 3
Duque de Caxias 3
Erbil 3
Fort Worth 3
Goiânia 3
Guelph 3
Hangzhou 3
Ipatinga 3
Juiz de Fora 3
Kingston 3
Kyiv 3
Lima 3
Totale 2.421
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Nome #
ML12 First devices, systems and demonstrators for energy storage R.E. N. 89/24 88
High-Performance Fe-MoS₂ Electrocatalyst for Efficient Nitrate Reduction to Ammonia: Synergistic Design for Sustainable Ammonia Production. 87
ML8 Final synthesis and characterization of materials and components of devices and systems for energy storage R.E. N. 67/23 87
ML10 Design and implementation of stacked/assembled materials and components for devices and systems for energy storage R.E. N. 88/24 80
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 76
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 73
Ultra-Low Loading of Gold on Nickel Foam for Nitrogen Electrochemistry 71
Measuring Techniques for the Semiconductor’s Parameters 68
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers 68
Evaluation of Voltage-Matched 2T Multi-Junction Modules Based on Monte Carlo Ray Tracing 61
Mixed Phase Ge2Sb2Te5 Thin Films with Temperature Independent Resistivity for Reconfigurable High Precision Resistors 60
"Direct" measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy 60
Combined Effect of Pressure and Temperature on Nitrogen Reduction Reaction in Water 60
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing 59
Strategies to improve the catalytic activity of Fe-based catalysts for nitrogen reduction reaction 59
Applicability of a new sulfonated pentablock copolymer membrane and modified gas diffusion layers for low-cost water splitting processes 58
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 57
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys 57
The Effects of Module Temperature on the Energy Yield of Bifacial Photovoltaics: Data and Model 56
Development of Various Photovoltaic-Driven Water Electrolysis Technologies for Green Solar Hydrogen Generation 56
Role of the Membrane Transport Mechanism in Electrochemical Nitrogen Reduction Experiments 55
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 54
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition 53
Advanced strategies for high activation in ion implanted 4H-SiC by laser annealing 52
Ni foam electrode solution impregnated with Ni-Fe_X(OH)_Y catalysts for efficient oxygen evolution reaction in alkaline electrolyzers 51
Outdoor performance of GaAs/bifacial Si heterojunction four-terminal system using optical spectrum splitting 51
Highly efficient solar hydrogen production through the use of bifacial photovoltaics and membrane electrolysis 50
Ion beam irradiation of phase change materials: A route to material properties investigation and engineering 48
Developing the next generation of renewable energy technologies: an overview of low-TRL EU-funded research projects 47
Disordering process of GeSb2Te4 induced by ion irradiation 47
Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction 47
The climatic response of thermally integrated photovoltaic-electrolysis water splitting using Si and CIGS combined with acidic and alkaline electrolysis 46
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 46
Ion beam induced transient amorphous nucleation in silicon 45
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 45
Ultralow loading electroless deposition of IrOx on nickel foam for efficient and stable water oxidation catalysis 45
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 44
Strain development and damage accumulation under ion irradiation of polycrystalline Ge-Sb-Te alloys 41
Effect of morphology and mechanical stability of nanometric platinum layer on nickel foam for hydrogen evolution reaction 40
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting 39
Electrocatalytical Nitrite Oxidation via Manganese and Copper Oxides on Carbon Screen-Printed Electrode 39
Structural transformations in Ge2Sb2Te5 under high pressure and temperature 38
Silicon Carbide detectors for nuclear physics experiments at high beam luminosity 38
Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity 38
Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications 38
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations 38
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 38
Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures 35
Atomic disordering processes in crystalline GeTe induced by ion irradiation 35
Trasporto di massa in film di GeTe amorfo, effetto del rilassamento strutturale 35
Effects of the growth rate on the quality of 4H silicon carbide films for MOSFET applications 35
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 34
Conductive filament structure in HfO2 resistive switching memory devices 33
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 33
Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura 32
SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications 32
Nucleation and growth of C54 grains into C49 TiSi2 thin films monitored by micro-Raman imaging 31
C49-C54 phase transition in nanometric titanium disilicide grains 31
Phase change mechanisms in Ge2Sb2Te5 30
Microscopy study of the conductive filament in HfO2 resistive switching memory devices 29
Crystallization and phase separation in Ge2+xSb2Te5 thin films 29
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 29
Silicon carbide detectors study for NUMEN project 29
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys 28
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 28
Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors 28
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 27
Electrical properties of defects in 4H-SiC investigated by photo-induced-currents measurements 26
Effect of the linewidth reduction on the characteristic time spread in C49-C54 phase transition 26
Microscopic Model for the Kinetics of the Reset Process in HfO2 RRAM 26
Kinetics of the C49-C54 transformation by micro-Raman imaging 26
Vialess integration for dual thin films--thin film resistor and heater 26
Crystal nucleation and growth processes in Ge2Sb2Te5 26
Memory effects in MOS capacitors with silicon rich oxide insulators 26
Resistor structure of phase change material and trimming method thereof. 26
Microscopic model for the kinetics of the reset process in HfO 2 RRAM 26
Memory effects in MOS capacitors with silicon rich oxide insulators 25
Investigation on C54 nucleation and growth by micro-Raman imaging 25
Optimization of Ion Implantation processes for 4H-SiC DIMOSFET 25
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 25
Conductive filament structure in HfO2 ReRAM devices 25
Determination of C54 nucleation site density in narrow stripes by sheet resistance measurements and OEº-Raman spectroscopy 25
Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 process 24
Resistor structure of phase change material and trimming method thereof 24
Microscopy study of conductive filament in HfO2 resistive switching memory devices 24
Pressure-induced amorphous Ge 2 Sb 2 Te 5 retention investigated by in situ X-Ray Diffraction 24
Direct measurement of the growth rate during the C49 to C54 transformation in tisi2: Activation energy 24
Morphological and electrical characterization of SixCryCzBv thin films 23
Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films 23
Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications 22
Investigation on C54 nucleation and growth by micro-Raman imaging 22
Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films 22
Amorphous-fcc transition in Ge2Sb2Te5 22
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide 21
Resistor structure of phase change material and trimming method thereof 21
Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2 21
Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and higher scalability of the TiSi2 process 20
Electrically trimmable resistor device and trimming method thereof 20
Electrically Tunable Ge2Sb2Te5 Resistors Independent of the Temperature for Reconfigurable High Precision Electronics 20
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC 18
Totale 3.956
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Categoria #
all - tutte 14.816
article - articoli 10.798
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 326
Totale 25.940
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202417 0 0 0 0 0 0 0 0 1 1 14 1
2024/20251.638 6 8 105 45 289 108 116 98 40 66 349 408
2025/20262.236 145 233 211 319 430 87 318 99 144 126 79 45
2026/2027174 127 47 0 0 0 0 0 0 0 0 0 0
Totale 4.065