CNR Institutional Research Information System

PRIVITERA, STEFANIA MARIA SERENA
 Distribuzione geografica
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Continente #
AS - Asia 1.878
NA - Nord America 1.335
EU - Europa 576
SA - Sud America 359
Continente sconosciuto - Info sul continente non disponibili 149
AF - Africa 29
OC - Oceania 3
Totale 4.329
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Nazione #
US - Stati Uniti d'America 1.271
SG - Singapore 814
CN - Cina 414
BR - Brasile 274
VN - Vietnam 203
IT - Italia 195
HK - Hong Kong 180
FR - Francia 126
KR - Corea 65
NL - Olanda 57
JP - Giappone 47
GB - Regno Unito 40
BD - Bangladesh 37
FI - Finlandia 36
DE - Germania 35
AR - Argentina 30
IN - India 28
CA - Canada 24
CO - Colombia 20
ID - Indonesia 16
MX - Messico 16
IE - Irlanda 15
PL - Polonia 15
IQ - Iraq 13
ZA - Sudafrica 13
EC - Ecuador 9
UA - Ucraina 9
TR - Turchia 7
TT - Trinidad e Tobago 7
AT - Austria 6
ES - Italia 6
IL - Israele 6
JM - Giamaica 6
LT - Lituania 6
RU - Federazione Russa 6
VE - Venezuela 6
AE - Emirati Arabi Uniti 5
CL - Cile 5
PE - Perù 5
PK - Pakistan 5
PY - Paraguay 5
MA - Marocco 4
MY - Malesia 4
SA - Arabia Saudita 4
SE - Svezia 4
TN - Tunisia 4
TW - Taiwan 4
AL - Albania 3
AU - Australia 3
CR - Costa Rica 3
KE - Kenya 3
KZ - Kazakistan 3
PH - Filippine 3
PT - Portogallo 3
TH - Thailandia 3
UY - Uruguay 3
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BG - Bulgaria 2
BO - Bolivia 2
CI - Costa d'Avorio 2
EG - Egitto 2
GE - Georgia 2
GR - Grecia 2
HN - Honduras 2
JO - Giordania 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MK - Macedonia 2
NP - Nepal 2
PA - Panama 2
SI - Slovenia 2
UZ - Uzbekistan 2
CZ - Repubblica Ceca 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
GT - Guatemala 1
HR - Croazia 1
LY - Libia 1
MM - Myanmar 1
NI - Nicaragua 1
QA - Qatar 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
Totale 4.180
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Città #
Singapore 474
Santa Clara 309
Hong Kong 178
San Jose 151
Hefei 128
Beijing 120
Ashburn 103
Lauterbourg 87
Ho Chi Minh City 66
Seoul 64
Hanoi 52
Los Angeles 47
Dallas 46
Tokyo 39
Cavallino 36
São Paulo 35
Catania 19
Council Bluffs 17
Milan 17
Lappeenranta 16
Dublin 15
Frankfurt am Main 15
New York 15
Amsterdam 13
Casalnuovo di Napoli 13
Helsinki 13
Da Nang 12
Rio de Janeiro 12
Chicago 11
Miami 11
Orem 11
Brooklyn 10
Palermo 10
Warsaw 10
Atlanta 9
Rome 9
Buffalo 8
Haiphong 8
London 8
Biên Hòa 7
Chennai 7
Guangzhou 7
Johannesburg 7
Dayton 6
Limbiate 6
Mumbai 6
Newark 6
Philadelphia 6
Porto Alegre 6
Seattle 6
Thái Nguyên 6
Turku 6
Baghdad 5
Bengaluru 5
Can Tho 5
Hải Dương 5
Las Vegas 5
Minamishinagawa 5
Montreal 5
Munich 5
Poplar 5
Queens 5
Roubaix 5
San Francisco 5
Bogotá 4
Boston 4
Brasília 4
City of London 4
Curitiba 4
Detroit 4
Dhaka 4
Düsseldorf 4
Figino 4
Fort Worth 4
Goiânia 4
Grand Rapids 4
Kingston 4
Mexico City 4
Nha Trang 4
Nuremberg 4
Phoenix 4
Ribeirão Preto 4
Salvador 4
San Antonio 4
Shenzhen 4
Turin 4
Vienna 4
Washington 4
Albuquerque 3
Ankara 3
Aracaju 3
Athens 3
Belo Horizonte 3
Bento Gonçalves 3
Bologna 3
Buenos Aires 3
Campo Grande 3
Cape Town 3
Caracas 3
Charlotte 3
Totale 2.491
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Nome #
ML12 First devices, systems and demonstrators for energy storage R.E. N. 89/24 94
ML8 Final synthesis and characterization of materials and components of devices and systems for energy storage R.E. N. 67/23 92
High-Performance Fe-MoS₂ Electrocatalyst for Efficient Nitrate Reduction to Ammonia: Synergistic Design for Sustainable Ammonia Production. 91
ML10 Design and implementation of stacked/assembled materials and components for devices and systems for energy storage R.E. N. 88/24 85
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 84
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 74
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers 74
Ultra-Low Loading of Gold on Nickel Foam for Nitrogen Electrochemistry 73
Measuring Techniques for the Semiconductor’s Parameters 70
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing 64
Evaluation of Voltage-Matched 2T Multi-Junction Modules Based on Monte Carlo Ray Tracing 64
"Direct" measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy 63
Mixed Phase Ge2Sb2Te5 Thin Films with Temperature Independent Resistivity for Reconfigurable High Precision Resistors 62
Applicability of a new sulfonated pentablock copolymer membrane and modified gas diffusion layers for low-cost water splitting processes 61
Combined Effect of Pressure and Temperature on Nitrogen Reduction Reaction in Water 61
Strategies to improve the catalytic activity of Fe-based catalysts for nitrogen reduction reaction 61
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 59
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 58
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys 58
Development of Various Photovoltaic-Driven Water Electrolysis Technologies for Green Solar Hydrogen Generation 58
Role of the Membrane Transport Mechanism in Electrochemical Nitrogen Reduction Experiments 58
The Effects of Module Temperature on the Energy Yield of Bifacial Photovoltaics: Data and Model 57
Advanced strategies for high activation in ion implanted 4H-SiC by laser annealing 55
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition 54
Highly efficient solar hydrogen production through the use of bifacial photovoltaics and membrane electrolysis 53
Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction 53
Ni foam electrode solution impregnated with Ni-Fe_X(OH)_Y catalysts for efficient oxygen evolution reaction in alkaline electrolyzers 52
Outdoor performance of GaAs/bifacial Si heterojunction four-terminal system using optical spectrum splitting 52
Ultralow loading electroless deposition of IrOx on nickel foam for efficient and stable water oxidation catalysis 50
Ion beam irradiation of phase change materials: A route to material properties investigation and engineering 50
Ion beam induced transient amorphous nucleation in silicon 49
Developing the next generation of renewable energy technologies: an overview of low-TRL EU-funded research projects 48
Disordering process of GeSb2Te4 induced by ion irradiation 48
Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications 48
The climatic response of thermally integrated photovoltaic-electrolysis water splitting using Si and CIGS combined with acidic and alkaline electrolysis 47
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 46
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 46
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting 43
Silicon Carbide detectors for nuclear physics experiments at high beam luminosity 43
Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity 43
Strain development and damage accumulation under ion irradiation of polycrystalline Ge-Sb-Te alloys 43
Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications 41
Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations 41
Effect of morphology and mechanical stability of nanometric platinum layer on nickel foam for hydrogen evolution reaction 41
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures 41
Structural transformations in Ge2Sb2Te5 under high pressure and temperature 40
Electrocatalytical Nitrite Oxidation via Manganese and Copper Oxides on Carbon Screen-Printed Electrode 40
Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura 38
Conductive filament structure in HfO2 resistive switching memory devices 37
Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures 37
Atomic disordering processes in crystalline GeTe induced by ion irradiation 36
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films 36
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials (vol 6, 23843, 2016) 36
Trasporto di massa in film di GeTe amorfo, effetto del rilassamento strutturale 36
Effects of the growth rate on the quality of 4H silicon carbide films for MOSFET applications 36
SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications 35
C49-C54 phase transition in nanometric titanium disilicide grains 34
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys 33
Nucleation and growth of C54 grains into C49 TiSi2 thin films monitored by micro-Raman imaging 33
Microscopy study of the conductive filament in HfO2 resistive switching memory devices 33
Phase change mechanisms in Ge2Sb2Te5 32
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 32
Crystallization and phase separation in Ge2+xSb2Te5 thin films 31
Crystal nucleation and growth processes in Ge2Sb2Te5 30
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 30
Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors 30
Silicon carbide detectors study for NUMEN project 30
Electrical properties of defects in 4H-SiC investigated by photo-induced-currents measurements 29
Effetto della pressione sulla stabilità termica di Ge2Sb2Te5 amorfo 29
Memory effects in MOS capacitors with silicon rich oxide insulators 28
Investigation on C54 nucleation and growth by micro-Raman imaging 28
Kinetics of the C49-C54 transformation by micro-Raman imaging 28
Vialess integration for dual thin films--thin film resistor and heater 28
Optimization of Ion Implantation processes for 4H-SiC DIMOSFET 28
Resistor structure of phase change material and trimming method thereof. 28
Microscopic model for the kinetics of the reset process in HfO 2 RRAM 28
Effect of the linewidth reduction on the characteristic time spread in C49-C54 phase transition 27
Microscopic Model for the Kinetics of the Reset Process in HfO2 RRAM 27
Conductive filament structure in HfO2 ReRAM devices 27
Microscopy study of conductive filament in HfO2 resistive switching memory devices 27
Memory effects in MOS capacitors with silicon rich oxide insulators 27
Pressure-induced amorphous Ge 2 Sb 2 Te 5 retention investigated by in situ X-Ray Diffraction 27
Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films 27
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 26
Determination of C54 nucleation site density in narrow stripes by sheet resistance measurements and OEº-Raman spectroscopy 26
Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 process 25
Resistor structure of phase change material and trimming method thereof 25
Direct measurement of the growth rate during the C49 to C54 transformation in tisi2: Activation energy 25
Morphological and electrical characterization of SixCryCzBv thin films 24
Resistor structure of phase change material and trimming method thereof 24
Amorphous-fcc transition in Ge2Sb2Te5 24
Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications 23
Investigation on C54 nucleation and growth by micro-Raman imaging 23
Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2 23
Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and higher scalability of the TiSi2 process 23
Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films 23
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide 22
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC 21
Electrically trimmable resistor device and trimming method thereof 21
Electrically Tunable Ge2Sb2Te5 Resistors Independent of the Temperature for Reconfigurable High Precision Electronics 21
Totale 4.205
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Categoria #
all - tutte 15.601
article - articoli 11.373
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 343
Totale 27.317
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202417 0 0 0 0 0 0 0 0 1 1 14 1
2024/20251.638 6 8 105 45 289 108 116 98 40 66 349 408
2025/20262.236 145 233 211 319 430 87 318 99 144 126 79 45
2026/2027438 127 107 204 0 0 0 0 0 0 0 0 0
Totale 4.329