CNR Institutional Research Information System

SPIGA, SABINA
 Distribuzione geografica
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Continente #
NA - Nord America 543
AS - Asia 219
EU - Europa 19
Totale 781
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Nazione #
US - Stati Uniti d'America 543
SG - Singapore 174
KR - Corea 28
CN - Cina 17
IT - Italia 10
SE - Svezia 4
FI - Finlandia 3
GR - Grecia 2
Totale 781
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Città #
Santa Clara 510
Singapore 125
Seoul 24
Guangzhou 15
Rome 7
Helsinki 3
Forest City 2
Bologna 1
Turin 1
Totale 688
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Nome #
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 12
null 12
Effect of Al doping on the retention behavior of HfO2 resistive switching memories 11
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 11
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons 10
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices 10
Analog memristive synapse in spiking networks implementing unsupervised learning 10
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 10
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 10
Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly 10
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication 10
Unraveling the roles of switching and relaxation times in volatile electrochemical memristors to mimic neuromorphic dynamical features 10
SHIP: a computational framework for simulating and validating novel technologies in hardware spiking neural networks 10
Analog HfO2-RRAM switches for neural networks 10
Interface engineering for Ge metal-oxide-semiconductor devices 10
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 9
Synaptic potentiation and depression in Al:HfO2-based memristor 9
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 9
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 9
Trends of structural and electrical properties in atomic layer deposited HfO2 films 9
Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs 9
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 9
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices 9
Formation and disruption of conductive filaments in a HfO2/TiN structure 9
Energy-band diagram of metal/Lu2O3/silicon structures 9
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer 9
Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) 9
Engineered fabrication of ordered arrays of Au-NiO-Au nanowires 9
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 9
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices 9
null 9
Vibrational and electrical properties of hexagonal La2O3 films 8
null 8
Atomic-layer deposition of Lu2O3 8
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing 8
Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates 8
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 8
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 8
Low-power resistive switching in Au/NiO/Au nanowire arrays 8
Low-temperature atomic layer deposition of MgO thin films on Si 8
Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics 8
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 8
Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates 8
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory 8
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 8
Role of Al doping in the filament disruption in HfO2 resistance switches 8
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 7
Low-temperature atomic layer deposition of MgO thin films on Si 7
Resistive switching in NiO based nanowire array for low power RERAM 7
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires 7
Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface 7
Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices 7
Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers 7
AFM measurement of the grain size in polycrystalline titanium silicides 7
X-ray absorption study of the growth of Y2O3 on Si(001) 7
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 7
Electrical characterization of rare earth oxides grown by atomic layer deposition 7
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 6
Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects 6
MDM-Numonyx-2008-D3-Growth and characterization of Al2O3 using O3 6
Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 6
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 6
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 6
Formation and structure of Sn and Sb nanoclusters in thin SiO2 films 6
Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition 6
Conduction band offset of HfO2 on GaAs 6
Transient currents in HfO2 and their impact on circuit and memory applications 6
High-k materials in FLASH memories 6
Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer 6
Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 6
Characterization of transient currents in HfO2 capacitors in the short timescale 6
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS 6
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 6
MDM-ST-2005-D3-Structural, morphological, and electrical characterization of Al2O3. 6
Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories 6
Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics 6
From Sub-micrometric to Nanometric Electrical Investigation of Resistance Switching Operations in NiO Films Dedicated to Resistive RAM Applications 6
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer 6
Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films 6
Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories 6
Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition 6
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 6
Structural and electrical characterization of ALCVD ZrO2 thin films on silicon 6
Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices 6
Annealing effects on silicon-rich thin film oxides studied by spectroscopic ellipsometry 5
Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors 5
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition 5
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 5
Temperature dependence of transient and steady-state gate currents in HfO2 capacitors 5
Band alignment at the La2Hf2O7/(001)Si interface 5
Scanning capacitance force microscopy and Kelvin probe force microscopy of nanostructures embedded in SiO2 5
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 5
Stack Engineering of HfO2-based Charge Trapping Non-volatile Memory 5
Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces 5
Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0.15Ga0.85As) substrates 5
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 5
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 5
Nanocrystals depth profiling by means of Cs+ in negative polarity with dual beam ToF-SIMS 5
Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates 5
null 5
Totale 739
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Categoria #
all - tutte 3.475
article - articoli 2.904
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 36
Totale 6.415
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202448 0 0 0 0 0 0 0 0 5 0 41 2
2024/2025746 11 11 130 69 404 121 0 0 0 0 0 0
Totale 794