SPIGA, SABINA
 Distribuzione geografica
Continente #
AS - Asia 140
NA - Nord America 42
EU - Europa 4
Totale 186
Nazione #
SG - Singapore 96
US - Stati Uniti d'America 42
KR - Corea 28
CN - Cina 16
SE - Svezia 3
IT - Italia 1
Totale 186
Città #
Singapore 77
Seoul 24
Guangzhou 14
Santa Clara 13
Forest City 2
Turin 1
Totale 131
Nome #
Atomic Defects Profiling and Reliability of Amorphous Al2O3Metal-Insulator-Metal Stacks 6
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 5
Effect of Al doping on the retention behavior of HfO2 resistive switching memories 4
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices 4
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 4
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 4
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 4
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory 4
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 3
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons 3
Synaptic potentiation and depression in Al:HfO2-based memristor 3
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 3
Trends of structural and electrical properties in atomic layer deposited HfO2 films 3
Extraction of Defects Properties in Dielectric Materials From I-V Curve Hysteresis 3
Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs 3
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 3
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires 3
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 3
Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices 3
Formation and disruption of conductive filaments in a HfO2/TiN structure 3
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer 3
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 3
Analog HfO2-RRAM switches for neural networks 3
Electrical characterization of rare earth oxides grown by atomic layer deposition 3
Interface engineering for Ge metal-oxide-semiconductor devices 3
Non-linear Memristive Synaptic Dynamics for Efficient Unsupervised Learning in Spiking Neural Networks 3
Analog memristive synapse in spiking networks implementing unsupervised learning 2
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 2
Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition 2
Atomic-layer deposition of Lu2O3 2
Conduction band offset of HfO2 on GaAs 2
Transient currents in HfO2 and their impact on circuit and memory applications 2
High-k materials in FLASH memories 2
Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface 2
Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 2
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS 2
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication 2
MDM-ST-2005-D3-Structural, morphological, and electrical characterization of Al2O3. 2
Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers 2
AFM measurement of the grain size in polycrystalline titanium silicides 2
From Sub-micrometric to Nanometric Electrical Investigation of Resistance Switching Operations in NiO Films Dedicated to Resistive RAM Applications 2
Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) 2
Low-temperature atomic layer deposition of MgO thin films on Si 2
Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates 2
Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films 2
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 2
Evaluating the denuded zone depth by measurements of the recombination activity of bulk defects 2
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices 2
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 2
Role of Al doping in the filament disruption in HfO2 resistance switches 2
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 2
Structural and electrical characterization of ALCVD ZrO2 thin films on silicon 2
Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices 2
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 1
Vibrational and electrical properties of hexagonal La2O3 films 1
Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects 1
MDM-Numonyx-2008-D3-Growth and characterization of Al2O3 using O3 1
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition 1
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 1
Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 1
Stack Engineering of HfO2-based Charge Trapping Non-volatile Memory 1
Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0.15Ga0.85As) substrates 1
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 1
Resistive switching in NiO based nanowire array for low power RERAM 1
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 1
Formation and structure of Sn and Sb nanoclusters in thin SiO2 films 1
Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition 1
Transition metal binary oxides for ReRAM applications 1
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications 1
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques 1
Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer 1
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 1
Characterization of transient currents in HfO2 capacitors in the short timescale 1
Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly 1
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing 1
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices 1
Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates 1
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 1
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 1
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks 1
Energy-band diagram of metal/Lu2O3/silicon structures 1
Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories 1
Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics 1
Low-power resistive switching in Au/NiO/Au nanowire arrays 1
Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics 1
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 1
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes 1
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer 1
Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100) 1
Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories 1
Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates 1
ZnO based selectors for crossbar non-volatile memories 1
Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy 1
X-ray absorption study of the growth of Y2O3 on Si(001) 1
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 1
Structural characterization of epitaxial Y2O3 on Si (001) and of the Y2O3/Si interface 1
Totale 186
Categoria #
all - tutte 1.706
article - articoli 1.428
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 20
Totale 3.154


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202446 0 0 0 0 0 0 0 0 4 0 40 2
2024/2025140 11 9 120 0 0 0 0 0 0 0 0 0
Totale 186