CNR Institutional Research Information System

SPIGA, SABINA
 Distribuzione geografica
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Continente #
AS - Asia 2.511
NA - Nord America 1.446
SA - Sud America 538
EU - Europa 511
Continente sconosciuto - Info sul continente non disponibili 120
AF - Africa 48
OC - Oceania 4
Totale 5.178
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Nazione #
US - Stati Uniti d'America 1.359
SG - Singapore 1.140
CN - Cina 507
BR - Brasile 448
HK - Hong Kong 273
VN - Vietnam 260
FR - Francia 142
NL - Olanda 122
IT - Italia 92
KR - Corea 88
BD - Bangladesh 49
JP - Giappone 49
IN - India 42
AR - Argentina 36
CA - Canada 29
GB - Regno Unito 26
DE - Germania 21
FI - Finlandia 20
EC - Ecuador 18
ID - Indonesia 16
MX - Messico 16
IQ - Iraq 15
CO - Colombia 10
ES - Italia 10
IL - Israele 10
VE - Venezuela 10
ZA - Sudafrica 10
MA - Marocco 9
RU - Federazione Russa 9
TR - Turchia 9
UA - Ucraina 9
PL - Polonia 8
GR - Grecia 7
JM - Giamaica 7
PK - Pakistan 7
SE - Svezia 7
UZ - Uzbekistan 7
CR - Costa Rica 6
PY - Paraguay 6
AE - Emirati Arabi Uniti 5
BB - Barbados 5
DO - Repubblica Dominicana 5
NP - Nepal 5
SA - Arabia Saudita 5
AL - Albania 4
AT - Austria 4
EG - Egitto 4
KZ - Kazakistan 4
MT - Malta 4
TN - Tunisia 4
AU - Australia 3
BG - Bulgaria 3
CL - Cile 3
GT - Guatemala 3
IE - Irlanda 3
JO - Giordania 3
KE - Kenya 3
LT - Lituania 3
PE - Perù 3
SN - Senegal 3
SV - El Salvador 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
AZ - Azerbaigian 2
CH - Svizzera 2
CI - Costa d'Avorio 2
DK - Danimarca 2
DZ - Algeria 2
EE - Estonia 2
HN - Honduras 2
LA - Repubblica Popolare Democratica del Laos 2
NI - Nicaragua 2
OM - Oman 2
PA - Panama 2
PH - Filippine 2
PT - Portogallo 2
RO - Romania 2
RS - Serbia 2
TH - Thailandia 2
UG - Uganda 2
BE - Belgio 1
BF - Burkina Faso 1
BH - Bahrain 1
BJ - Benin 1
BM - Bermuda 1
BO - Bolivia 1
BS - Bahamas 1
BZ - Belize 1
CM - Camerun 1
CZ - Repubblica Ceca 1
GA - Gabon 1
GE - Georgia 1
GM - Gambi 1
HR - Croazia 1
KG - Kirghizistan 1
LB - Libano 1
LC - Santa Lucia 1
LV - Lettonia 1
ML - Mali 1
MR - Mauritania 1
Totale 5.051
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Città #
Singapore 675
Santa Clara 518
Hong Kong 269
Ashburn 160
San Jose 145
Hefei 144
Beijing 137
Lauterbourg 131
Ho Chi Minh City 94
Seoul 83
Hanoi 54
Rome 45
Los Angeles 43
Tokyo 41
São Paulo 33
Dallas 20
Guangzhou 20
New York 16
Orem 16
Rio de Janeiro 15
Lappeenranta 13
Da Nang 11
Milan 11
Baghdad 10
Buffalo 10
Haiphong 10
Belo Horizonte 9
Frankfurt am Main 9
Salvador 9
Chennai 8
Guayaquil 8
Hải Dương 8
Porto Alegre 8
Boston 7
Helsinki 7
Montreal 7
Newark 7
Bengaluru 6
Biên Hòa 6
Campinas 6
Council Bluffs 6
Hangzhou 6
Minamishinagawa 6
Piscataway 6
Quận Bình Thạnh 6
Recife 6
Warsaw 6
Bologna 5
Bridgetown 5
Can Tho 5
Chicago 5
Denver 5
Dhaka 5
Imperatriz 5
Johannesburg 5
Las Vegas 5
San José 5
Thái Nguyên 5
Volta Redonda 5
Amsterdam 4
Atlanta 4
Baltimore 4
Brasília 4
Brooklyn 4
Campo Grande 4
Caruaru 4
Curitiba 4
Goiânia 4
Madrid 4
Manaus 4
Mumbai 4
Passo Fundo 4
Quito 4
Seattle 4
Taboão da Serra 4
Tashkent 4
The Dalles 4
Valletta 4
Amman 3
Athens 3
Balneário Camboriú 3
Boardman 3
Bogotá 3
Buenos Aires 3
Bắc Giang 3
Cabo Frio 3
Dakar 3
Detroit 3
Dubai 3
Dublin 3
Fortaleza 3
Fuzhou 3
Genoa 3
Guwahati 3
Ha Long 3
Jackson 3
Jequié 3
Johnson City 3
Joinville 3
Kathmandu 3
Totale 3.073
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Nome #
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications - Computational Memory, Deep Learning, and Spiking Neural Networks 91
Memristive Materials, Devices, and Systems (MEMRISYS 2023) 84
Physical Implementation of a Tunable Memristor-based Chua's Circuit 83
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons 69
Vibrational and electrical properties of hexagonal La2O3 films 68
Improving HfO2-Based Resistive Switching Devices by Inserting a TaOxThin Film via Engineered In Situ Oxidation 68
Analog memristive synapse in spiking networks implementing unsupervised learning 67
Modeling and simulation of electrochemical and surface diffusion effects in filamentary cation-based resistive memory devices 61
Extraction of Defects Properties in Dielectric Materials From I-V Curve Hysteresis 56
Atomic Defects Profiling and Reliability of Amorphous Al2O3Metal-Insulator-Metal Stacks 55
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 53
Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks 53
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 51
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices 51
Chua’s Circuit With Tunable Nonlinearity Based on a Nonvolatile Memristor: Design and Realization 51
Non-linear Memristive Synaptic Dynamics for Efficient Unsupervised Learning in Spiking Neural Networks 51
Synaptic potentiation and depression in Al:HfO2-based memristor 50
Unraveling the roles of switching and relaxation times in volatile electrochemical memristors to mimic neuromorphic dynamical features 50
SHIP: a computational framework for simulating and validating novel technologies in hardware spiking neural networks 50
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 50
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 49
Analog HfO2-RRAM switches for neural networks 49
The electrons' journey in thick metal oxides 48
Physics-based compact modelling of the analog dynamics of HfOx resistive memories 48
HfO2-based resistive switching memory devices for neuromorphic computing 48
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices 47
Roadmap to neuromorphic computing with emerging technologies 47
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing 47
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer 47
Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly 46
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication 45
Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics 45
The 2022 applied physics by pioneering women: a roadmap 45
Effect of Al doping on the retention behavior of HfO2 resistive switching memories 44
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 43
Formation and disruption of conductive filaments in a HfO2/TiN structure 42
2022 roadmap on neuromorphic computing and engineering 42
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 42
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 42
MOx materials by ALD method 41
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 40
Standards for the Characterization of Endurance in Resistive Switching Devices 39
Low-temperature atomic layer deposition of MgO thin films on Si 39
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 39
Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 39
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 38
Noise induced oscillations in a second order circuit with nonvolatile memristor 38
Interface engineering for Ge metal-oxide-semiconductor devices 38
Novel Approaches for Neuromorphic Computing: Materials, Concepts and Devices 37
Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates 37
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 37
Low-temperature atomic layer deposition of MgO thin films on Si 37
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices 37
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 36
Engineered fabrication of ordered arrays of Au-NiO-Au nanowires 36
Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates 36
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 35
Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 35
Memristive devices as computational memory 35
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires 35
AFM measurement of the grain size in polycrystalline titanium silicides 35
Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) 35
Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer 34
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 34
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 34
Annealing effects on silicon-rich thin film oxides studied by spectroscopic ellipsometry 33
Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects 33
Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors 33
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 33
Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs 33
Conduction band offset of HfO2 on GaAs 33
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 33
Electrical characterization of rare earth oxides grown by atomic layer deposition 33
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 32
Trends of structural and electrical properties in atomic layer deposited HfO2 films 31
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 31
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 31
Formation and structure of Sn and Sb nanoclusters in thin SiO2 films 31
Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers 31
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory 31
Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition 31
Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface 30
Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices 30
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks 30
Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks 30
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 30
Low-power resistive switching in Au/NiO/Au nanowire arrays 30
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition 29
High-k materials in FLASH memories 29
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 29
Memristive devices for spiking neural networks 29
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS 29
Role of Al doping in the filament disruption in HfO2 resistance switches 29
Role of resistive memory devices in brain-inspired computing 29
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer 28
MDM-Numonyx-2008-D3-Growth and characterization of Al2O3 using O3 27
Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0.15Ga0.85As) substrates 27
Memristive devices for deep learning applications 27
From Sub-micrometric to Nanometric Electrical Investigation of Resistance Switching Operations in NiO Films Dedicated to Resistive RAM Applications 27
Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates 27
Totale 4.093
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Categoria #
all - tutte 20.829
article - articoli 16.828
book - libri 176
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 688
Totale 38.521
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202448 0 0 0 0 0 0 0 0 5 0 41 2
2024/20252.060 11 11 130 69 404 121 156 94 49 133 472 410
2025/20262.865 126 240 300 471 578 94 430 153 185 132 73 83
2026/2027205 157 48 0 0 0 0 0 0 0 0 0 0
Totale 5.178