CNR Institutional Research Information System

SPIGA, SABINA
 Distribuzione geografica
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Continente #
AS - Asia 2.483
NA - Nord America 1.294
SA - Sud America 528
EU - Europa 495
AF - Africa 47
OC - Oceania 4
Totale 4.851
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Nazione #
US - Stati Uniti d'America 1.225
SG - Singapore 1.139
CN - Cina 506
BR - Brasile 445
HK - Hong Kong 273
VN - Vietnam 254
FR - Francia 142
NL - Olanda 122
KR - Corea 88
IT - Italia 82
JP - Giappone 49
IN - India 40
AR - Argentina 35
BD - Bangladesh 35
GB - Regno Unito 25
CA - Canada 21
DE - Germania 20
FI - Finlandia 20
EC - Ecuador 16
ID - Indonesia 15
IQ - Iraq 15
MX - Messico 15
CO - Colombia 10
IL - Israele 10
ZA - Sudafrica 10
MA - Marocco 9
RU - Federazione Russa 9
TR - Turchia 9
ES - Italia 8
PL - Polonia 8
UA - Ucraina 8
GR - Grecia 7
PK - Pakistan 7
SE - Svezia 7
UZ - Uzbekistan 7
PY - Paraguay 6
VE - Venezuela 6
AE - Emirati Arabi Uniti 5
BB - Barbados 5
JM - Giamaica 5
SA - Arabia Saudita 5
AL - Albania 4
AT - Austria 4
DO - Repubblica Dominicana 4
EG - Egitto 4
KZ - Kazakistan 4
MT - Malta 4
NP - Nepal 4
TN - Tunisia 4
AU - Australia 3
BG - Bulgaria 3
CL - Cile 3
CR - Costa Rica 3
IE - Irlanda 3
JO - Giordania 3
LT - Lituania 3
PE - Perù 3
SN - Senegal 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
AZ - Azerbaigian 2
CH - Svizzera 2
CI - Costa d'Avorio 2
DK - Danimarca 2
DZ - Algeria 2
EE - Estonia 2
HN - Honduras 2
KE - Kenya 2
NI - Nicaragua 2
OM - Oman 2
PA - Panama 2
PT - Portogallo 2
RO - Romania 2
RS - Serbia 2
SV - El Salvador 2
TH - Thailandia 2
UG - Uganda 2
BF - Burkina Faso 1
BH - Bahrain 1
BJ - Benin 1
BM - Bermuda 1
BO - Bolivia 1
BS - Bahamas 1
BZ - Belize 1
CM - Camerun 1
CZ - Repubblica Ceca 1
GA - Gabon 1
GE - Georgia 1
GM - Gambi 1
GT - Guatemala 1
HR - Croazia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LC - Santa Lucia 1
LV - Lettonia 1
ML - Mali 1
MR - Mauritania 1
MY - Malesia 1
NE - Niger 1
Totale 4.845
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Città #
Singapore 674
Santa Clara 516
Hong Kong 269
Hefei 144
San Jose 143
Beijing 137
Ashburn 131
Lauterbourg 131
Ho Chi Minh City 92
Seoul 83
Hanoi 53
Los Angeles 42
Tokyo 41
Rome 40
São Paulo 33
Guangzhou 20
Dallas 19
Orem 16
New York 15
Rio de Janeiro 15
Lappeenranta 13
Da Nang 11
Baghdad 10
Buffalo 10
Haiphong 10
Belo Horizonte 9
Frankfurt am Main 9
Milan 9
Salvador 9
Chennai 8
Hải Dương 8
Porto Alegre 8
Guayaquil 7
Helsinki 7
Montreal 7
Biên Hòa 6
Campinas 6
Council Bluffs 6
Hangzhou 6
Minamishinagawa 6
Quận Bình Thạnh 6
Recife 6
Warsaw 6
Bologna 5
Boston 5
Bridgetown 5
Chicago 5
Denver 5
Dhaka 5
Imperatriz 5
Johannesburg 5
Thái Nguyên 5
Volta Redonda 5
Amsterdam 4
Bengaluru 4
Brasília 4
Campo Grande 4
Can Tho 4
Caruaru 4
Curitiba 4
Goiânia 4
Madrid 4
Manaus 4
Mumbai 4
Newark 4
Passo Fundo 4
Quito 4
Seattle 4
Taboão da Serra 4
Tashkent 4
The Dalles 4
Valletta 4
Amman 3
Athens 3
Atlanta 3
Balneário Camboriú 3
Boardman 3
Bogotá 3
Brooklyn 3
Buenos Aires 3
Bắc Giang 3
Cabo Frio 3
Dakar 3
Detroit 3
Dubai 3
Dublin 3
Fortaleza 3
Fuzhou 3
Genoa 3
Guwahati 3
Ha Long 3
Jequié 3
Joinville 3
Kathmandu 3
Las Vegas 3
Lucknow 3
Mauá 3
Minneapolis 3
Niterói 3
Nuremberg 3
Totale 3.007
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Nome #
Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications - Computational Memory, Deep Learning, and Spiking Neural Networks 91
Memristive Materials, Devices, and Systems (MEMRISYS 2023) 83
Physical Implementation of a Tunable Memristor-based Chua's Circuit 83
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons 69
Improving HfO2-Based Resistive Switching Devices by Inserting a TaOxThin Film via Engineered In Situ Oxidation 67
Analog memristive synapse in spiking networks implementing unsupervised learning 67
Vibrational and electrical properties of hexagonal La2O3 films 66
Modeling and simulation of electrochemical and surface diffusion effects in filamentary cation-based resistive memory devices 61
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy 52
Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks 52
Atomic Defects Profiling and Reliability of Amorphous Al2O3Metal-Insulator-Metal Stacks 51
Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces 50
Extraction of Defects Properties in Dielectric Materials From I-V Curve Hysteresis 49
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices 49
SHIP: a computational framework for simulating and validating novel technologies in hardware spiking neural networks 49
Non-linear Memristive Synaptic Dynamics for Efficient Unsupervised Learning in Spiking Neural Networks 49
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 48
Synaptic potentiation and depression in Al:HfO2-based memristor 48
Chua’s Circuit With Tunable Nonlinearity Based on a Nonvolatile Memristor: Design and Realization 48
Analog HfO2-RRAM switches for neural networks 48
Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices 47
Unraveling the roles of switching and relaxation times in volatile electrochemical memristors to mimic neuromorphic dynamical features 47
Roadmap to neuromorphic computing with emerging technologies 46
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer 46
The electrons' journey in thick metal oxides 45
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication 45
Physics-based compact modelling of the analog dynamics of HfOx resistive memories 45
Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics 44
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 44
Effect of Al doping on the retention behavior of HfO2 resistive switching memories 43
HfO2-based resistive switching memory devices for neuromorphic computing 43
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors 42
Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly 42
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing 42
2022 roadmap on neuromorphic computing and engineering 41
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 41
The 2022 applied physics by pioneering women: a roadmap 41
MOx materials by ALD method 40
Formation and disruption of conductive filaments in a HfO2/TiN structure 40
Low-temperature atomic layer deposition of MgO thin films on Si 38
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 38
Standards for the Characterization of Endurance in Resistive Switching Devices 37
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack 37
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 37
Noise induced oscillations in a second order circuit with nonvolatile memristor 37
Interface engineering for Ge metal-oxide-semiconductor devices 37
Novel Approaches for Neuromorphic Computing: Materials, Concepts and Devices 36
Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 36
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices 36
Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 35
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si 35
Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates 35
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 35
AFM measurement of the grain size in polycrystalline titanium silicides 35
Low-temperature atomic layer deposition of MgO thin films on Si 35
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu 34
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires 34
Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) 34
Engineered fabrication of ordered arrays of Au-NiO-Au nanowires 34
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) 33
Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs 33
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition 33
Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) 33
Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates 33
Electrical characterization of rare earth oxides grown by atomic layer deposition 33
Annealing effects on silicon-rich thin film oxides studied by spectroscopic ellipsometry 32
Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects 32
Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors 32
Conduction band offset of HfO2 on GaAs 32
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition 32
Trends of structural and electrical properties in atomic layer deposited HfO2 films 31
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 31
Memristive devices as computational memory 31
Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer 31
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 31
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory 31
Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface 30
Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks 30
Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN 29
Formation and structure of Sn and Sb nanoclusters in thin SiO2 films 29
High-k materials in FLASH memories 29
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 29
Memristive devices for spiking neural networks 29
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 29
Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition 29
Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition 29
Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices 28
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS 28
Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers 28
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks 28
Low-power resistive switching in Au/NiO/Au nanowire arrays 28
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer 28
Role of resistive memory devices in brain-inspired computing 28
Role of Al doping in the filament disruption in HfO2 resistance switches 27
MDM-Numonyx-2008-D3-Growth and characterization of Al2O3 using O3 26
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition 26
Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates 26
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 26
Transient currents in HfO2 and their impact on circuit and memory applications 26
Memristive devices for deep learning applications 26
Totale 3.934
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Categoria #
all - tutte 19.204
article - articoli 15.531
book - libri 170
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 633
Totale 35.538
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202448 0 0 0 0 0 0 0 0 5 0 41 2
2024/20252.060 11 11 130 69 404 121 156 94 49 133 472 410
2025/20262.863 126 240 300 471 578 94 430 153 185 132 73 81
Totale 4.971