CNR Institutional Research Information System

ROCCAFORTE, FABRIZIO
 Distribuzione geografica
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Continente #
NA - Nord America 834
AS - Asia 735
EU - Europa 507
SA - Sud America 16
AF - Africa 1
Totale 2.093
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Nazione #
US - Stati Uniti d'America 830
SG - Singapore 624
IT - Italia 361
FI - Finlandia 47
CN - Cina 46
DE - Germania 32
HK - Hong Kong 21
NL - Olanda 17
KR - Corea 10
BR - Brasile 8
LV - Lettonia 5
PL - Polonia 5
GB - Regno Unito 4
JP - Giappone 4
AE - Emirati Arabi Uniti 3
AT - Austria 3
AZ - Azerbaigian 3
BG - Bulgaria 3
DK - Danimarca 3
EC - Ecuador 3
FR - Francia 3
IE - Irlanda 3
PE - Perù 3
RU - Federazione Russa 3
TW - Taiwan 3
VN - Vietnam 3
AL - Albania 2
EE - Estonia 2
HU - Ungheria 2
IL - Israele 2
KZ - Kazakistan 2
MD - Moldavia 2
PT - Portogallo 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TR - Turchia 2
UA - Ucraina 2
AR - Argentina 1
BD - Bangladesh 1
BY - Bielorussia 1
CA - Canada 1
CO - Colombia 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
IN - India 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
LK - Sri Lanka 1
MA - Marocco 1
NO - Norvegia 1
PH - Filippine 1
PK - Pakistan 1
RO - Romania 1
TM - Turkmenistan 1
UZ - Uzbekistan 1
Totale 2.093
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Città #
Santa Clara 584
Singapore 365
Cavallino 97
Helsinki 47
Messina 38
Catania 31
Bologna 22
Guangzhou 22
Hong Kong 21
Los Angeles 19
Rome 18
Casale sul Sile 17
Falkenstein 14
Seattle 12
Seoul 10
Padova 9
Milan 8
Palermo 8
Phoenix 8
Ashburn 7
Amsterdam 6
Miami 6
Lucca 5
Naples 5
Riga 5
Bitonto 4
Pedara 4
Pescara 4
Baku 3
Dubai 3
Dublin 3
Lima region 3
Misterbianco 3
Portsmouth 3
Sofia 3
Vienna 3
Almaty 2
Bari 2
Boydton 2
Bratislava 2
Chisinau 2
Council Bluffs 2
Forest City 2
Guayaquil 2
Istanbul 2
Lauterbourg 2
Lisbon 2
Modena 2
Newark 2
Pingzhen 2
Radyvyliv 2
Rimini 2
Riyadh 2
Shenzhen 2
Tallinn 2
Tel Aviv 2
Tirana 2
Amman 1
Ashgabat 1
Avaré 1
Bishkek 1
Buenos Aires 1
Colchester 1
Colombo 1
Dhaka 1
Düsseldorf 1
Florence 1
Frankfurt am Main 1
Ho Chi Minh City 1
Islamabad 1
Kalocsa 1
Kingston 1
Manila 1
Mascalucia 1
Mogilev 1
Muro Leccese 1
New York 1
Nicosia 1
Oslo 1
Prague 1
Prato 1
Quito 1
Rabat 1
Regina 1
Resende 1
Salvador 1
San José 1
Saquarema 1
Sarzana 1
Springfield 1
São João de Meriti 1
São Paulo 1
Taichung 1
Tashkent 1
Tomsk 1
Tremestieri Etneo 1
Várzea Paulista 1
Wakabamachi 1
Warsaw 1
Yaroslavl 1
Totale 1.505
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 34
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 28
Materials and Processes for Schottky Contacts on Silicon Carbide 27
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs 24
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 23
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 22
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 22
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 21
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 20
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 20
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 20
Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation 20
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 19
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 18
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 18
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 18
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 17
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 17
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 17
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 17
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 17
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 17
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 16
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 16
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 16
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 16
Status and prospects of cubic silicon carbide power electronics device technology 16
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 15
Potentialities of nickel oxide as dielectric for GaN and SiC devices 15
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices 15
Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability 14
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 14
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 14
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 14
Selective Doping in Silicon Carbide Power Devices 14
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 13
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 13
Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress 13
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 13
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 13
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 13
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS2 Exfoliated on Gold: The Role of the Substrate 13
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 13
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 13
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures 13
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 13
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry 12
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 12
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 12
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 12
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 12
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications 12
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 12
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 12
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 12
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures 12
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 12
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 12
Introduction to Gallium Nitride Properties and Applications 12
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 12
Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs 12
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures 12
Measuring Techniques for the Semiconductor’s Parameters 12
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 12
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 11
Microscopic mechanisms of graphene electrolytic delamination from metal substrates 11
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 11
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 11
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 11
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 11
Schottky Contacts to Silicon Carbide: Physics, Technology and Applications 11
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 11
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 11
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 11
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 10
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 10
Current transport in graphene/AlGaN/GaN heterostructures 10
Barrier height tuning in Ti/4H-SiC Schottky diodes 10
Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations 10
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices 10
Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials 10
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses 10
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 10
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 10
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 10
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 10
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 10
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 10
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 10
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 9
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy 9
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 9
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 9
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts 9
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs 9
Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films 9
Metal/semiconductor contacts to silicon carbide: Physics and technology 9
Self-assembled metal nanostructures in semiconductor structures 9
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 9
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 9
Totale 1.369
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Categoria #
all - tutte 13.157
article - articoli 11.014
book - libri 29
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 264
Totale 24.464
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 7 0 46 6
2024/20252.489 24 32 368 211 570 530 300 285 169 0 0 0
Totale 2.548