CNR Institutional Research Information System

ROCCAFORTE, FABRIZIO
 Distribuzione geografica
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Continente #
AS - Asia 64
EU - Europa 16
NA - Nord America 5
Totale 85
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Nazione #
CN - Cina 35
SG - Singapore 17
IT - Italia 14
KR - Corea 10
US - Stati Uniti d'America 5
TW - Taiwan 2
NL - Olanda 1
RO - Romania 1
Totale 85
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Città #
Guangzhou 22
Singapore 12
Seoul 10
Bitonto 4
Bari 2
Boydton 2
Catania 2
Forest City 2
Milan 2
Pingzhen 2
Amsterdam 1
Bologna 1
Totale 62
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 8
Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices 3
Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces 3
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 2
Potentialities of nickel oxide as dielectric for GaN and SiC devices 2
Schottky Contacts to Silicon Carbide: Physics, Technology and Applications 2
Technologies for normally-off GaN HEMTs 2
Nanoscale transport properties at silicon carbide interfaces 2
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 2
Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films 2
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric 2
Electrical characterization of nickel silicide contacts on silicon carbide 2
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices 2
Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC 2
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 2
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes 1
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 1
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 1
Challenges for energy efficient wide band gap semiconductors power devices 1
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 1
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 1
Ti/Al-based contacts to p-type SiC and GaN for power device applications 1
Ohmic contacts to SiC 1
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN 1
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping 1
High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors 1
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator 1
Current transport in graphene/AlGaN/GaN heterostructures 1
Ion-irradiation effect on the Ni/SiC interface reaction 1
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 1
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization 1
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 1
Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs 1
Substrate and atmosphere influence on oxygen p-doped graphene 1
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 1
A nanoscale look in the channel of 4H-SiC lateral MOSFETs 1
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111) 1
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 1
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors 1
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 1
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 1
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 1
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier 1
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments 1
Effects of thermal annealing processes in phosphorous implanted 4H-SiC layers 1
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review 1
Challenges in graphene integration for high-frequency electronics 1
Self-assembled metal nanostructures in semiconductor structures 1
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 1
Angular distortion of Si clusters in a-SiC 1
Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements 1
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: role of the AlGaN layer microstructure 1
Introduction to Gallium Nitride Properties and Applications 1
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 1
Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC 1
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress 1
Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2 1
Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide 1
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering 1
Defect evolution in ion irradiated 6H-SiC epitaxial layers 1
Au/Si nanodroplets towards Si nanowires formation: characterization of the thermal-induced self-organization mechanism 1
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 1
Totale 85
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Categoria #
all - tutte 3.757
article - articoli 3.188
book - libri 15
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 61
Totale 7.021
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202458 0 0 0 0 0 0 0 0 7 0 45 6
2024/202527 21 6 0 0 0 0 0 0 0 0 0 0
Totale 85