CNR Institutional Research Information System

ROCCAFORTE, FABRIZIO
 Distribuzione geografica
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Continente #
AS - Asia 7.827
NA - Nord America 3.272
EU - Europa 1.739
SA - Sud America 1.285
AF - Africa 135
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 1
Totale 14.269
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Nazione #
SG - Singapore 3.244
US - Stati Uniti d'America 3.114
CN - Cina 1.896
BR - Brasile 1.046
HK - Hong Kong 781
VN - Vietnam 765
IT - Italia 583
FR - Francia 438
KR - Corea 359
JP - Giappone 173
NL - Olanda 147
FI - Finlandia 135
IN - India 133
BD - Bangladesh 105
AR - Argentina 99
GB - Regno Unito 95
DE - Germania 94
CA - Canada 65
IL - Israele 54
ID - Indonesia 50
EC - Ecuador 39
ZA - Sudafrica 38
RU - Federazione Russa 35
IQ - Iraq 34
PL - Polonia 33
CO - Colombia 31
MX - Messico 29
TR - Turchia 28
SA - Arabia Saudita 24
ES - Italia 23
TW - Taiwan 22
PY - Paraguay 21
PK - Pakistan 20
UA - Ucraina 20
EG - Egitto 18
MA - Marocco 17
PE - Perù 16
JM - Giamaica 15
TH - Thailandia 15
CL - Cile 14
CR - Costa Rica 14
PH - Filippine 14
AE - Emirati Arabi Uniti 13
AT - Austria 13
MY - Malesia 13
SE - Svezia 13
JO - Giordania 11
KE - Kenya 11
RO - Romania 11
TT - Trinidad e Tobago 11
UZ - Uzbekistan 11
IE - Irlanda 10
VE - Venezuela 10
AZ - Azerbaigian 9
TN - Tunisia 9
DZ - Algeria 8
NP - Nepal 8
PT - Portogallo 8
BE - Belgio 7
GR - Grecia 7
LV - Lettonia 7
PA - Panama 7
UY - Uruguay 7
AL - Albania 6
AU - Australia 6
CZ - Repubblica Ceca 6
KZ - Kazakistan 6
BG - Bulgaria 5
HN - Honduras 5
HR - Croazia 5
HU - Ungheria 5
LB - Libano 5
LT - Lituania 5
BH - Bahrain 4
BY - Bielorussia 4
CG - Congo 4
DK - Danimarca 4
KG - Kirghizistan 4
KW - Kuwait 4
MD - Moldavia 4
OM - Oman 4
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
IR - Iran 3
LU - Lussemburgo 3
NZ - Nuova Zelanda 3
QA - Qatar 3
SK - Slovacchia (Repubblica Slovacca) 3
SN - Senegal 3
AO - Angola 2
BF - Burkina Faso 2
BO - Bolivia 2
EE - Estonia 2
ET - Etiopia 2
GE - Georgia 2
GM - Gambi 2
GT - Guatemala 2
LK - Sri Lanka 2
NA - Namibia 2
NO - Norvegia 2
Totale 14.232
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Città #
Singapore 1.954
Hefei 855
Hong Kong 770
San Jose 674
Santa Clara 611
Lauterbourg 380
Ashburn 358
Seoul 349
Beijing 303
Ho Chi Minh City 254
Hanoi 189
Los Angeles 182
Dallas 128
Cavallino 102
Tokyo 100
São Paulo 83
Buffalo 66
Lappeenranta 63
New York 56
Minamishinagawa 50
Helsinki 47
Rome 42
Catania 40
Messina 38
Orem 36
Haiphong 35
Milan 35
Bengaluru 31
Rio de Janeiro 31
Da Nang 30
Bologna 28
Guangzhou 28
Frankfurt am Main 26
Turku 24
Chennai 21
Phoenix 21
Council Bluffs 20
Warsaw 20
Curitiba 19
Baghdad 18
Boardman 18
Brasília 18
Brooklyn 18
Montreal 18
Amsterdam 17
Casale sul Sile 17
Hải Dương 17
Seattle 16
Shanghai 16
Biên Hòa 15
Chicago 15
Pretoria 15
Recife 15
Toronto 15
Campinas 14
Dhaka 14
Falkenstein 14
Palermo 14
Belo Horizonte 13
Miami 13
Munich 13
Naples 13
Quito 13
Bangkok 12
Guarulhos 12
Guayaquil 12
Hangzhou 12
Manchester 12
San José 12
Amman 11
Atlanta 11
Buenos Aires 11
Bắc Ninh 11
Houston 11
Istanbul 11
Jakarta 11
Ninh Bình 11
Bến Tre 10
Cairo 10
Can Tho 10
Jeddah 10
Mumbai 10
Quận Bình Thạnh 10
Ribeirão Preto 10
Boston 9
Caxias do Sul 9
Denver 9
Johannesburg 9
Nairobi 9
Osaka 9
Padova 9
Salvador 9
Stockholm 9
Tashkent 9
Vũng Tàu 9
Asunción 8
Baku 8
Dublin 8
Kingston 8
Lima 8
Totale 8.837
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 138
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 113
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 102
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 100
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 98
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry 96
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 94
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 93
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors 90
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 88
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 80
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes 79
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 79
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 78
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 73
Challenges for energy efficient wide band gap semiconductors power devices 72
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation 71
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 71
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 71
Dual metal SiC Schottky rectifiers with low power dissipation 71
Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER) 69
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 69
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 69
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 68
Measuring Techniques for the Semiconductor’s Parameters 67
Scanning Capacitance Microscopy in Microelectronics 66
Electro-optical response of ion-irradiated 4H-SiC Schottky ultraviolet photodetectors 65
Ti/Al-based contacts to p-type SiC and GaN for power device applications 65
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 65
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 65
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC 64
Materials and Processes for Schottky Contacts on Silicon Carbide 64
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 63
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 61
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 61
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 61
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 60
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 60
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications 59
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 59
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 59
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 58
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 58
Vertical Transistors Based on 2D Materials: Status and Prospects 58
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 58
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 58
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 57
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 57
Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments 56
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 56
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 56
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 56
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs 56
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 56
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 55
Ohmic contacts to SiC 54
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 54
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 54
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 53
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Study of behavior of p-gate in Power GaN under positive voltage 53
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 53
Oxygen migration during epitaxial regrowth in Cs+-irradiated alpha-quartz investigated by means of nuclear reaction analysis 52
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy 52
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 52
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 52
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 52
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 52
Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation 52
Introduction to Gallium Nitride Properties and Applications 52
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 52
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 52
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy 51
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process 51
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 51
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs 51
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 51
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 50
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 50
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 50
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC 49
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier 49
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 49
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 49
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses 49
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 49
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 48
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 48
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 48
Self-assembled metal nanostructures in semiconductor structures 48
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 48
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures 48
Clustering of gold on 6H-SiC and local nanoscale electrical properties 47
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 47
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 47
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 47
Large area visible blind 4H-SiC P+/N UV photodiode obtained by Aluminium implantation 46
Totale 6.180
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Categoria #
all - tutte 55.132
article - articoli 46.149
book - libri 112
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.006
Totale 102.399
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 7 0 46 6
2024/20255.420 24 32 368 210 570 530 300 285 173 173 1.475 1.280
2025/20269.256 526 968 878 1.364 1.490 330 1.552 566 554 464 277 287
Totale 14.735