CNR Institutional Research Information System

ROCCAFORTE, FABRIZIO
 Distribuzione geografica
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Continente #
AS - Asia 7.982
NA - Nord America 4.893
EU - Europa 1.958
SA - Sud America 1.416
Continente sconosciuto - Info sul continente non disponibili 468
AF - Africa 136
OC - Oceania 10
Totale 16.863
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Nazione #
US - Stati Uniti d'America 4.620
SG - Singapore 3.258
CN - Cina 1.915
BR - Brasile 1.084
VN - Vietnam 787
HK - Hong Kong 782
IT - Italia 725
FR - Francia 447
KR - Corea 361
JP - Giappone 175
NL - Olanda 149
FI - Finlandia 135
BD - Bangladesh 134
IN - India 134
GB - Regno Unito 122
CA - Canada 114
AR - Argentina 108
DE - Germania 101
ID - Indonesia 72
CO - Colombia 70
EC - Ecuador 63
IL - Israele 55
MX - Messico 40
PL - Polonia 38
ZA - Sudafrica 38
RU - Federazione Russa 35
IQ - Iraq 34
CR - Costa Rica 30
TR - Turchia 30
ES - Italia 29
PH - Filippine 29
SA - Arabia Saudita 27
UA - Ucraina 26
VE - Venezuela 26
JM - Giamaica 25
TH - Thailandia 25
TW - Taiwan 24
MY - Malesia 21
PK - Pakistan 21
PY - Paraguay 21
EG - Egitto 18
CL - Cile 17
MA - Marocco 17
PE - Perù 16
HN - Honduras 15
TT - Trinidad e Tobago 14
AE - Emirati Arabi Uniti 13
AT - Austria 13
SE - Svezia 13
IE - Irlanda 11
JO - Giordania 11
KE - Kenya 11
RO - Romania 11
UZ - Uzbekistan 11
AZ - Azerbaigian 9
TN - Tunisia 9
BE - Belgio 8
DZ - Algeria 8
GR - Grecia 8
NP - Nepal 8
PA - Panama 8
PT - Portogallo 8
EE - Estonia 7
GT - Guatemala 7
LV - Lettonia 7
UY - Uruguay 7
AL - Albania 6
AU - Australia 6
CZ - Repubblica Ceca 6
KZ - Kazakistan 6
BG - Bulgaria 5
BY - Bielorussia 5
HR - Croazia 5
HU - Ungheria 5
LB - Libano 5
LT - Lituania 5
SK - Slovacchia (Repubblica Slovacca) 5
BH - Bahrain 4
BO - Bolivia 4
CG - Congo 4
DK - Danimarca 4
KG - Kirghizistan 4
KW - Kuwait 4
MD - Moldavia 4
NI - Nicaragua 4
OM - Oman 4
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
IR - Iran 3
LU - Lussemburgo 3
NZ - Nuova Zelanda 3
QA - Qatar 3
SN - Senegal 3
AO - Angola 2
BB - Barbados 2
BF - Burkina Faso 2
BS - Bahamas 2
CH - Svizzera 2
ET - Etiopia 2
GE - Georgia 2
Totale 16.345
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Città #
Singapore 1.960
San Jose 861
Hefei 857
Hong Kong 770
Santa Clara 652
Ashburn 496
Lauterbourg 380
Seoul 349
Beijing 303
Ho Chi Minh City 259
Hanoi 198
Los Angeles 193
Dallas 136
Cavallino 102
Tokyo 101
São Paulo 86
Buffalo 74
New York 72
Lappeenranta 63
Rome 54
Milan 50
Minamishinagawa 50
Helsinki 47
Catania 43
Messina 38
Haiphong 37
Orem 36
Council Bluffs 35
Rio de Janeiro 34
Da Nang 32
Bengaluru 31
Bologna 31
Chicago 31
Brooklyn 30
Guangzhou 30
Philadelphia 30
Phoenix 30
Atlanta 28
Houston 28
Brasília 27
Frankfurt am Main 26
Queens 26
Montreal 24
Turku 24
Quito 23
Guayaquil 22
Miami 22
Chennai 21
San José 21
Seattle 20
Warsaw 20
Curitiba 19
Naples 19
Amsterdam 18
Baghdad 18
Boardman 18
Las Vegas 18
Toronto 18
Casale sul Sile 17
Dhaka 17
Hải Dương 17
Manchester 17
Shanghai 17
Palermo 16
Washington 16
Bangkok 15
Biên Hòa 15
Charlotte 15
Kingston 15
Pretoria 15
Recife 15
Campinas 14
Falkenstein 14
Figino 14
Newark 14
Belo Horizonte 13
Munich 13
The Bronx 13
Turin 13
Boston 12
Buenos Aires 12
Guarulhos 12
Hangzhou 12
Istanbul 12
Jakarta 12
Pittsburgh 12
Providence 12
Amman 11
Bogotá 11
Bắc Ninh 11
Caracas 11
Jeddah 11
Ninh Bình 11
Birmingham 10
Bến Tre 10
Cairo 10
Can Tho 10
Cincinnati 10
Denver 10
Jacksonville 10
Totale 9.588
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Nome #
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 155
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 116
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 109
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 108
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 108
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 104
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry 102
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 101
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 98
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors 96
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 94
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H-SiC Schottky diodes 88
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 86
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 83
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 82
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 79
Dual metal SiC Schottky rectifiers with low power dissipation 79
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 78
Materials and Processes for Schottky Contacts on Silicon Carbide 78
Challenges for energy efficient wide band gap semiconductors power devices 77
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 76
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 76
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 75
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation 74
Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER) 74
Scanning Capacitance Microscopy in Microelectronics 73
Ti/Al-based contacts to p-type SiC and GaN for power device applications 73
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 73
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 72
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 72
Measuring Techniques for the Semiconductor’s Parameters 71
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 70
Electro-optical response of ion-irradiated 4H-SiC Schottky ultraviolet photodetectors 68
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 68
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC 68
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 68
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 67
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 67
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 67
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 66
Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments 66
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications 66
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 66
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 65
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 64
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 64
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs 64
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 63
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 63
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 63
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 63
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 62
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 62
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 62
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 62
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 62
Vertical Transistors Based on 2D Materials: Status and Prospects 61
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 61
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs 61
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 61
Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation 61
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 61
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 61
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 60
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 60
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 60
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 60
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process 59
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses 59
Introduction to Gallium Nitride Properties and Applications 59
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC 58
Ohmic contacts to SiC 58
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 58
Oxygen migration during epitaxial regrowth in Cs+-irradiated alpha-quartz investigated by means of nuclear reaction analysis 57
Study of behavior of p-gate in Power GaN under positive voltage 57
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 57
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 56
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy 56
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 56
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 56
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 56
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 55
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 55
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 55
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 55
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC 55
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 55
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy 54
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 54
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 54
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 54
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 54
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 54
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 53
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier 53
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 53
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 52
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 52
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 51
Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials 51
Totale 6.844
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Categoria #
all - tutte 64.355
article - articoli 53.949
book - libri 125
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.177
Totale 119.606
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 7 0 46 6
2024/20255.420 24 32 368 210 570 530 300 285 173 173 1.475 1.280
2025/20269.265 526 968 878 1.364 1.490 330 1.552 566 554 464 277 296
2026/20272.119 501 456 1.162 0 0 0 0 0 0 0 0 0
Totale 16.863