CNR Institutional Research Information System

GIANNAZZO, FILIPPO
 Distribuzione geografica
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Continente #
AS - Asia 7.523
NA - Nord America 4.826
EU - Europa 1.847
SA - Sud America 1.416
Continente sconosciuto - Info sul continente non disponibili 428
AF - Africa 140
OC - Oceania 11
Totale 16.191
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Nazione #
US - Stati Uniti d'America 4.550
SG - Singapore 3.020
CN - Cina 1.863
BR - Brasile 1.103
HK - Hong Kong 745
VN - Vietnam 738
IT - Italia 653
FR - Francia 412
KR - Corea 360
NL - Olanda 152
BD - Bangladesh 140
JP - Giappone 131
FI - Finlandia 126
CA - Canada 122
IN - India 118
AR - Argentina 112
GB - Regno Unito 105
DE - Germania 99
ID - Indonesia 69
CO - Colombia 61
EC - Ecuador 56
IL - Israele 51
ZA - Sudafrica 44
EE - Estonia 43
MX - Messico 43
IQ - Iraq 40
RU - Federazione Russa 40
TR - Turchia 32
ES - Italia 29
SA - Arabia Saudita 27
UA - Ucraina 26
VE - Venezuela 25
CR - Costa Rica 24
PL - Polonia 23
CL - Cile 21
JM - Giamaica 21
MA - Marocco 21
PH - Filippine 20
EG - Egitto 18
MY - Malesia 18
PK - Pakistan 17
SE - Svezia 15
NP - Nepal 14
AT - Austria 13
PE - Perù 13
TH - Thailandia 13
JO - Giordania 12
PY - Paraguay 12
AE - Emirati Arabi Uniti 11
HN - Honduras 11
TW - Taiwan 11
GR - Grecia 10
LB - Libano 10
RO - Romania 10
TT - Trinidad e Tobago 10
UZ - Uzbekistan 10
KZ - Kazakistan 9
UY - Uruguay 9
DZ - Algeria 8
IE - Irlanda 8
LT - Lituania 8
NI - Nicaragua 8
PA - Panama 8
PT - Portogallo 8
SV - El Salvador 8
AU - Australia 7
AZ - Azerbaigian 7
BG - Bulgaria 7
TN - Tunisia 7
AL - Albania 6
BE - Belgio 6
HR - Croazia 6
KE - Kenya 6
LV - Lettonia 5
OM - Oman 5
BO - Bolivia 4
BY - Bielorussia 4
CZ - Repubblica Ceca 4
ET - Etiopia 4
GT - Guatemala 4
KG - Kirghizistan 4
MD - Moldavia 4
PR - Porto Rico 4
SK - Slovacchia (Repubblica Slovacca) 4
XK - ???statistics.table.value.countryCode.XK??? 4
BH - Bahrain 3
CG - Congo 3
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
HU - Ungheria 3
IR - Iran 3
KW - Kuwait 3
LU - Lussemburgo 3
NG - Nigeria 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BF - Burkina Faso 2
Totale 15.710
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Città #
Singapore 1.807
Hefei 851
San Jose 797
Hong Kong 736
Santa Clara 597
Ashburn 465
Lauterbourg 351
Seoul 351
Beijing 292
Ho Chi Minh City 257
Los Angeles 206
Hanoi 191
Dallas 125
Cavallino 97
São Paulo 81
Buffalo 71
New York 67
Tokyo 64
Lappeenranta 58
Rome 52
Milan 48
Minamishinagawa 48
Helsinki 46
Tallinn 40
Messina 38
Orem 34
Catania 33
Chicago 31
Council Bluffs 31
Haiphong 31
Atlanta 29
Bengaluru 29
Bologna 29
Houston 29
Phoenix 29
Rio de Janeiro 29
Brasília 27
Philadelphia 27
Brooklyn 25
Montreal 25
Frankfurt am Main 24
Queens 23
Curitiba 22
Da Nang 22
Charlotte 21
Naples 21
Turku 21
Boardman 20
Chennai 20
Guangzhou 20
Guayaquil 20
Quito 19
San José 19
Baghdad 18
Casale sul Sile 18
Manchester 17
Seattle 17
Belo Horizonte 16
Dhaka 16
Miami 16
Newark 16
Pretoria 16
Amsterdam 15
Las Vegas 15
Munich 15
Warsaw 15
Campinas 14
Figino 14
Hải Dương 14
Recife 14
Toronto 14
Boston 13
Denver 13
Johannesburg 13
Amman 12
Chengdu 12
Hangzhou 12
Kingston 12
Riyadh 12
Falkenstein 11
London 11
Pittsburgh 11
The Bronx 11
Bogotá 10
Buenos Aires 10
Cairo 10
Guarulhos 10
Mumbai 10
San Antonio 10
Santo André 10
Ankara 9
Biên Hòa 9
Düsseldorf 9
Jeddah 9
Kuala Lumpur 9
Memphis 9
Montevideo 9
Ninh Bình 9
Palermo 9
Salvador 9
Totale 9.029
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Nome #
Indium Nitride at the 2D Limit 207
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 156
B activation enhancement in submicron confined implants in Si 130
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 116
Emerging SiC Applications beyond Power Electronic Devices 115
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 109
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 108
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 108
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry 102
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 98
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 90
Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements 87
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications 86
Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing 84
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 83
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 82
Influence of substrate dielectric permittivity on local capacitive behavior in graphene 80
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 79
Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature 79
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 78
Materials and Processes for Schottky Contacts on Silicon Carbide 78
Challenges for energy efficient wide band gap semiconductors power devices 77
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 76
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 76
Optical, morphological and spectroscopic characterization of graphene on SiO2 75
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation 74
Scanning Capacitance Microscopy in Microelectronics 73
Electron transport properties of calix[4]arene based systems in a metal-molecule-metal junction 73
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 73
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 72
Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN 72
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine 71
Measuring Techniques for the Semiconductor’s Parameters 71
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 70
Drift mobility in quantum nanostructures by scanning probe microscopy 68
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 68
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC 68
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 68
Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si 67
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) 67
Out‐of‐Glovebox Integration of Recyclable Europium‐Doped CsPbI3 in Triple‐Mesoscopic Carbon‐Based Solar Cells Exceeding 9% Efficiency 67
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 67
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 67
Interface Properties of MoS2 van der Waals Heterojunctions with GaN 67
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 66
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations 66
Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2 65
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale 65
2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface 65
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 64
Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions 64
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 64
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs 64
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 63
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 63
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 63
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate 62
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films 62
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 62
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 62
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 62
Vertical Transistors Based on 2D Materials: Status and Prospects 61
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 61
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 61
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 61
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 61
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 60
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 60
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 60
Improved Electrical and Structural Stability in HTL-Free Perovskite Solar Cells by Vacuum Curing Treatment 60
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 59
Delaminated graphene at silicon carbide facets: Atomic scale imaging and spectroscopy 59
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 59
Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism 58
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 58
Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices 58
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 58
Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy 57
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy 56
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 56
New Approaches and Understandings in the Growth of Cubic Silicon Carbide 56
Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots 55
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation 55
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 55
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 55
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters 55
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC 55
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions 55
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy 54
Direct growth of quasifreestanding epitaxial graphene on nonpolar SiC surfaces 54
A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method 54
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 54
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 54
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 54
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 54
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 53
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 53
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 52
Nanostructured TiO2 Grown by Low-Temperature Reactive Sputtering for Planar Perovskite Solar Cells 52
Radial junctions formed by conformal chemical doping for innovative hole-based solar cells 52
Totale 7.068
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Categoria #
all - tutte 60.885
article - articoli 52.787
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 966
Totale 114.638
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 9 0 45 5
2024/20255.106 30 30 370 218 540 451 281 273 161 175 1.416 1.161
2025/20268.827 495 948 864 1.336 1.431 333 1.391 589 503 394 277 266
2026/20272.199 486 455 1.258 0 0 0 0 0 0 0 0 0
Totale 16.191