CNR Institutional Research Information System

GIANNAZZO, FILIPPO
 Distribuzione geografica
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Continente #
AS - Asia 320
NA - Nord America 113
EU - Europa 25
Totale 458
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Nazione #
SG - Singapore 271
US - Stati Uniti d'America 113
CN - Cina 33
IT - Italia 19
KR - Corea 11
TW - Taiwan 5
NL - Olanda 2
SE - Svezia 2
RO - Romania 1
RU - Federazione Russa 1
Totale 458
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Città #
Singapore 216
Santa Clara 25
Guangzhou 18
Seoul 11
Bitonto 4
Bologna 3
Hsinchu County 3
Parma 3
Amsterdam 2
Catania 2
Palermo 2
Pingzhen 2
Rimini 2
Ashburn 1
Fort Worth 1
Springfield 1
Yaroslavl 1
Totale 297
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Nome #
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 12
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 10
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 6
Potentialities of nickel oxide as dielectric for GaN and SiC devices 5
Schottky Contacts to Silicon Carbide: Physics, Technology and Applications 5
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 5
Assessing the performance of two-dimensional dopant profiling techniques 5
Electronic properties of graphene probed at the nanoscale 5
Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces 5
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 4
Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si 4
Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy 4
Atomic layer deposition of high-k insulators on epitaxial graphene: A review 3
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor 3
Challenges for energy efficient wide band gap semiconductors power devices 3
Influence of substrate dielectric permittivity on local capacitive behavior in graphene 3
Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature 3
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 3
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 3
Direct growth of quasifreestanding epitaxial graphene on nonpolar SiC surfaces 3
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 3
Microscopic mechanisms of graphene electrolytic delamination from metal substrates 3
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 3
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopySolid State Microscopy of Semiconducting 3
A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method 3
Current transport in graphene/AlGaN/GaN heterostructures 3
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy 3
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization 3
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride 3
Graphene-SiO2 Interaction from Composites to Doping 3
A nanoscale look in the channel of 4H-SiC lateral MOSFETs 3
MOCVD of AlN on epitaxial graphene at extreme temperatures 3
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum 3
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition 3
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 3
Influence of hydrofluoric acid treatment on electroless deposition of Au clusters 3
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS2 by Conductive Atomic Force Microscopy 3
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 3
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures 3
Localization of He induced nanovoids in buried Si1-xGex thin films 3
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 3
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 3
Radial junctions formed by conformal chemical doping for innovative hole-based solar cells 3
Atomistic simulations and interfacial morphology of graphene grown on SiC(0001) and SiC(000-1) substrates 3
Improved Electrical and Structural Stability in HTL-Free Perovskite Solar Cells by Vacuum Curing Treatment 3
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 3
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric 3
Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites 3
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress 3
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 3
Preliminary study on the effect of micrometric Ge-droplets on the characteristics of Ni/4H-SiC Schottky contacts 3
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 3
Optical, morphological and spectroscopic characterization of graphene on SiO2 2
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 2
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation 2
Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions 2
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 2
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 2
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC 2
B activation enhancement in submicron confined implants in Si 2
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 2
Effect of He induced nanovoid on B implanted in Si: the microscopic mechanism 2
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 2
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) 2
High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors 2
Recent advances on dielectrics technology for SiC and GaN power devices 2
Impact of Morphological Features on the Dielectric Breakdown at SiO2/3C-SiC Interfaces 2
Scanning capacitance microscopy on semiconductor materials and devices 2
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 2
Microstructure and transport properties in alloyed Ohmic contacts to p-type SiC and GaN for power devices applications 2
Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy 2
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 2
Nanoscale modification of graphene transport properties by ion irradiation 2
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene 2
Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene 2
Graphene: Synthesis and nanoscale characterization of electronic properties 2
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density 2
Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC 2
On the viability of Au/3C-SiC Schottky barrier diodes 2
Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy 2
In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O-2-controlled atmosphere 2
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer 2
Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations 2
Simposio D Multidimensional Electrical and Chemical Characterization at the Nanometer scale of Organic and Inorganic Semiconductors dell EMRS fall meeting 2010 2
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 2
Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2 2
Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress 2
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 2
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si 2
Metal/semiconductor contacts to silicon carbide: Physics and technology 2
Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy (vol 101, 261906, 2012) 2
Carrier concentration and mobility-profiling in quantum wells by scanning probe microscopy 2
Lateral dopant profiles in polycrystalline Si delineated by scanning capacitance and transmission electron microscopy 2
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 2
SPM techniques for carrier profiling at advanced technology nodes 2
Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide 2
Effects of thermal annealing processes in phosphorous implanted 4H-SiC layers 2
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review 2
Nanoscale transport properties at silicon carbide interfaces 2
Size-dependent Schottky Barrier Height in self-Assembled gold nanoparticles on 6H-SIC 2
Totale 286
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Categoria #
all - tutte 4.872
article - articoli 4.305
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 75
Totale 9.252
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202457 0 0 0 0 0 0 0 0 9 0 45 3
2024/2025404 30 30 344 0 0 0 0 0 0 0 0 0
Totale 461