CNR Institutional Research Information System

SOLMI, SANDRO
 Distribuzione geografica
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Continente #
AS - Asia 1.613
NA - Nord America 1.006
EU - Europa 294
SA - Sud America 281
AF - Africa 23
Continente sconosciuto - Info sul continente non disponibili 5
Totale 3.222
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Nazione #
US - Stati Uniti d'America 948
SG - Singapore 659
CN - Cina 401
BR - Brasile 221
VN - Vietnam 173
HK - Hong Kong 151
FR - Francia 105
KR - Corea 67
IT - Italia 39
NL - Olanda 32
JP - Giappone 31
DE - Germania 28
IN - India 27
BD - Bangladesh 25
GB - Regno Unito 24
FI - Finlandia 23
CA - Canada 21
AR - Argentina 16
ID - Indonesia 16
MX - Messico 13
CO - Colombia 12
IL - Israele 11
IQ - Iraq 11
EC - Ecuador 9
ZA - Sudafrica 9
VE - Venezuela 8
PL - Polonia 7
TR - Turchia 7
JM - Giamaica 6
PY - Paraguay 6
SE - Svezia 6
ES - Italia 5
TN - Tunisia 5
UZ - Uzbekistan 5
NI - Nicaragua 4
RO - Romania 4
SA - Arabia Saudita 4
UA - Ucraina 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
CR - Costa Rica 3
MY - Malesia 3
NP - Nepal 3
PE - Perù 3
PK - Pakistan 3
RU - Federazione Russa 3
TT - Trinidad e Tobago 3
AO - Angola 2
AZ - Azerbaigian 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
HU - Ungheria 2
JO - Giordania 2
LB - Libano 2
PA - Panama 2
PT - Portogallo 2
UY - Uruguay 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BE - Belgio 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
BY - Bielorussia 1
CH - Svizzera 1
GP - Guadalupe 1
GR - Grecia 1
HN - Honduras 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
LU - Lussemburgo 1
MA - Marocco 1
MZ - Mozambico 1
PH - Filippine 1
PS - Palestinian Territory 1
SN - Senegal 1
SV - El Salvador 1
TH - Thailandia 1
Totale 3.217
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Città #
Singapore 386
Santa Clara 240
Hefei 158
Hong Kong 146
San Jose 94
Lauterbourg 83
Ashburn 81
Beijing 78
Ho Chi Minh City 68
Seoul 66
Hanoi 41
Los Angeles 31
Dallas 23
Tokyo 21
New York 18
Buffalo 16
Helsinki 16
Frankfurt am Main 11
Guangzhou 11
São Paulo 11
Chicago 10
Da Nang 10
Brooklyn 9
Milan 8
Minamishinagawa 8
Rio de Janeiro 8
Belo Horizonte 7
Orem 7
Turku 7
Bengaluru 6
Charlotte 6
Council Bluffs 6
Haiphong 6
Kingston 6
Brasília 5
Curitiba 5
Elk Grove Village 5
Falkenstein 5
Philadelphia 5
Queens 5
Quito 5
Stockholm 5
The Bronx 5
Toronto 5
Warsaw 5
Asunción 4
Atlanta 4
Bologna 4
Bắc Giang 4
Dhaka 4
Houston 4
Johannesburg 4
Munich 4
Myrtle Beach 4
Osasco 4
Paris 4
San Diego 4
San Francisco 4
Thái Bình 4
Biên Hòa 3
Bình Dương 3
Chennai 3
City of London 3
Concord 3
Düsseldorf 3
Guarulhos 3
Lagoa Santa 3
Las Vegas 3
London 3
Los Banos 3
Managua 3
Manchester 3
Massapequa 3
Memphis 3
Mexico City 3
Northampton 3
Phoenix 3
Pittsburgh 3
Recife 3
Ribeirão Preto 3
Richmond 3
Rome 3
Salvador 3
San José 3
Shanghai 3
Washington 3
Amman 2
Ankara 2
Austin 2
Baghdad 2
Baku 2
Bandung 2
Bogotá 2
Boston 2
Brandon 2
Bình Dương Province 2
Cairo 2
Campinas 2
Cape Town 2
Carapicuíba 2
Totale 1.923
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Nome #
Characterization of MOS capacitors fabricated on n-type 4H-SiC 78
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 69
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 68
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 67
Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si 62
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 60
Encyclopedia of Materials: Science and technology 57
Damage and recovery in doped SOI layers after high energy implantation 54
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 53
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 53
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 51
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 50
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 50
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 49
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 48
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 48
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 46
A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY 46
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 46
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 46
Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing 46
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
Ultradense silicon nanowire arrays produced via top-down planar technology 45
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 45
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 45
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 44
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators 44
Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy 44
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 44
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 43
Sviluppo di un flusso di processo tecnologico per la realizzazione di rivelatori SPAD monolitici 43
Crossbar architecture for tera scale integration 42
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 41
Realizzazione di nanofili di Si mediante processo top-down di crescita templata di poly-Si su wafer di Si, per applicazioni termoelettriche 40
Thermoelectric properties of p and n-type nanocrystalline silicon nanowires with high doping levels 40
Low temperature oxidation of SiC preamorphized by ion implantation 39
Recovery of the carrier density in arsenic-doped silicon after high energy 2 MeV Si¿ implantation 39
Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation 39
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 39
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 38
Phonon scattering enhancement in silicon nanolayers 38
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 37
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 37
Fabrication and Thermoelectric Characterization of Surface-Micromachined Silicon Nanowires 37
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 37
Indium in silicon: a study on diffusion and electrical activation 36
Phonon scattering enhancement in Si nanolayers 36
Passivation by N implantation of the SiO2/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability 35
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 34
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states 33
Processo di ossidazione di semiconduttori in carburo di silicio 32
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 32
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 32
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 31
Clustering equilibrium and deactivation kinetics in arsenic doped silicon 31
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 30
Damage and recovery in boron doped SOI layers after high energy implantation 29
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 29
MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen 29
Arsenic uphill diffusion during shallow junction formation 29
Fabbricazione di MOSFET ad elevata mobilità su 4H-SiC 28
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 28
Boron pile-up phenomena during ultra shallow junction formation 27
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 26
Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation 26
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose 26
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET 26
Behaviour of low energy As ions implanted in Si through a thin oxide layer 25
Damage and recovery in doped SOI layers after high energy implantation 25
Transient enhanced diffusion of arsenic in silicon 25
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 25
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 25
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 25
Uphill diffusion of ultra low energy boron implants in preamorphised silicon and silicon on insulator 23
Diffusion and electrical activation of indium in silicon 23
Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation 23
Investigation on indium diffusion in silicon 22
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 22
Damage and recovery in doped SOI layers after high energy implantation 22
Electrical activation of B in the presence of boron-interstitials clusters 22
Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC 21
MOS capacitors fabricated on (0001) 4H-SiC implanted with N+ ions 21
Strumento innovativo multiparametrico per il monitoraggio aerodinamico della qualità dell'aria (SIMAQ) - Rapporto finale 20
Features of arsenic clusters in silicon 19
Boron-Interstitial cluster kinetics: extraction of binding energies from dedicated experiments 19
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 18
Totale 3.222
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Categoria #
all - tutte 11.974
article - articoli 6.834
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 145
Totale 18.953
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202432 0 0 0 0 0 0 0 0 2 6 24 0
2024/20251.103 3 8 112 45 213 32 4 66 6 53 303 258
2025/20261.749 98 155 165 285 351 76 273 95 94 81 40 36
2026/2027338 98 94 146 0 0 0 0 0 0 0 0 0
Totale 3.222