CNR Institutional Research Information System

SOLMI, SANDRO
 Distribuzione geografica
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Continente #
AS - Asia 1.613
NA - Nord America 1.069
EU - Europa 301
SA - Sud America 283
AF - Africa 24
Continente sconosciuto - Info sul continente non disponibili 5
Totale 3.295
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Nazione #
US - Stati Uniti d'America 1.010
SG - Singapore 659
CN - Cina 401
BR - Brasile 221
VN - Vietnam 173
HK - Hong Kong 151
FR - Francia 105
KR - Corea 67
IT - Italia 45
NL - Olanda 32
JP - Giappone 31
DE - Germania 28
IN - India 27
BD - Bangladesh 25
GB - Regno Unito 25
FI - Finlandia 23
CA - Canada 21
AR - Argentina 16
ID - Indonesia 16
CO - Colombia 14
MX - Messico 13
IL - Israele 11
IQ - Iraq 11
EC - Ecuador 9
ZA - Sudafrica 9
VE - Venezuela 8
JM - Giamaica 7
PL - Polonia 7
TR - Turchia 7
PY - Paraguay 6
SE - Svezia 6
ES - Italia 5
TN - Tunisia 5
UZ - Uzbekistan 5
NI - Nicaragua 4
RO - Romania 4
SA - Arabia Saudita 4
UA - Ucraina 4
AE - Emirati Arabi Uniti 3
CL - Cile 3
CR - Costa Rica 3
MY - Malesia 3
NP - Nepal 3
PE - Perù 3
PK - Pakistan 3
RU - Federazione Russa 3
TT - Trinidad e Tobago 3
AO - Angola 2
AZ - Azerbaigian 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
HU - Ungheria 2
JO - Giordania 2
LB - Libano 2
PA - Panama 2
PT - Portogallo 2
UY - Uruguay 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BE - Belgio 1
BH - Bahrain 1
BO - Bolivia 1
BS - Bahamas 1
BY - Bielorussia 1
CH - Svizzera 1
GP - Guadalupe 1
GR - Grecia 1
HN - Honduras 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
LU - Lussemburgo 1
MA - Marocco 1
MZ - Mozambico 1
PH - Filippine 1
PS - Palestinian Territory 1
SC - Seychelles 1
SN - Senegal 1
SV - El Salvador 1
TH - Thailandia 1
Totale 3.290
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Città #
Singapore 386
Santa Clara 240
Hefei 158
Hong Kong 146
San Jose 119
Ashburn 88
Lauterbourg 83
Beijing 78
Ho Chi Minh City 68
Seoul 66
Hanoi 41
Los Angeles 32
Dallas 24
Tokyo 21
New York 18
Buffalo 16
Helsinki 16
Chicago 11
Frankfurt am Main 11
Guangzhou 11
São Paulo 11
Da Nang 10
Brooklyn 9
Milan 9
Minamishinagawa 8
Rio de Janeiro 8
Belo Horizonte 7
Orem 7
Turku 7
Bengaluru 6
Charlotte 6
Council Bluffs 6
Haiphong 6
Kingston 6
Brasília 5
Curitiba 5
Elk Grove Village 5
Falkenstein 5
Philadelphia 5
Queens 5
Quito 5
Stockholm 5
The Bronx 5
Toronto 5
Warsaw 5
Asunción 4
Atlanta 4
Bologna 4
Bắc Giang 4
Dhaka 4
Houston 4
Johannesburg 4
Munich 4
Myrtle Beach 4
Osasco 4
Paris 4
San Diego 4
San Francisco 4
Thái Bình 4
Washington 4
Biên Hòa 3
Bình Dương 3
Chennai 3
City of London 3
Concord 3
Düsseldorf 3
Guarulhos 3
Lagoa Santa 3
Las Vegas 3
London 3
Los Banos 3
Managua 3
Manchester 3
Massapequa 3
Memphis 3
Mexico City 3
Northampton 3
Phoenix 3
Pittsburgh 3
Raleigh 3
Recife 3
Ribeirão Preto 3
Richmond 3
Rome 3
Salvador 3
San José 3
Shanghai 3
Amman 2
Ankara 2
Austin 2
Baghdad 2
Baku 2
Bandung 2
Bogotá 2
Boston 2
Brandon 2
Bình Dương Province 2
Cairo 2
Campinas 2
Cape Town 2
Totale 1.961
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Nome #
Characterization of MOS capacitors fabricated on n-type 4H-SiC 79
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 72
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 70
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 69
Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si 63
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 60
Encyclopedia of Materials: Science and technology 58
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 55
Damage and recovery in doped SOI layers after high energy implantation 54
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 54
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 51
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 51
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 50
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 50
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 48
A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY 48
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 48
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 48
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 47
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 47
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 46
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 46
Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing 46
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
Ultradense silicon nanowire arrays produced via top-down planar technology 45
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 45
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 45
Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy 45
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 44
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators 44
Recovery of the carrier density in arsenic-doped silicon after high energy 2 MeV Si¿ implantation 43
Sviluppo di un flusso di processo tecnologico per la realizzazione di rivelatori SPAD monolitici 43
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 42
Crossbar architecture for tera scale integration 42
Thermoelectric properties of p and n-type nanocrystalline silicon nanowires with high doping levels 41
Realizzazione di nanofili di Si mediante processo top-down di crescita templata di poly-Si su wafer di Si, per applicazioni termoelettriche 40
Low temperature oxidation of SiC preamorphized by ion implantation 39
Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation 39
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 39
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 39
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 38
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 38
Phonon scattering enhancement in silicon nanolayers 38
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 38
Fabrication and Thermoelectric Characterization of Surface-Micromachined Silicon Nanowires 37
Indium in silicon: a study on diffusion and electrical activation 36
Phonon scattering enhancement in Si nanolayers 36
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states 36
Passivation by N implantation of the SiO2/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability 36
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 35
Clustering equilibrium and deactivation kinetics in arsenic doped silicon 34
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 34
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 33
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 33
Processo di ossidazione di semiconduttori in carburo di silicio 32
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 30
Boron pile-up phenomena during ultra shallow junction formation 30
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 30
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 30
Fabbricazione di MOSFET ad elevata mobilità su 4H-SiC 29
Damage and recovery in boron doped SOI layers after high energy implantation 29
MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen 29
Arsenic uphill diffusion during shallow junction formation 29
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET 28
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 27
Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation 27
Transient enhanced diffusion of arsenic in silicon 27
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 27
Behaviour of low energy As ions implanted in Si through a thin oxide layer 26
Damage and recovery in doped SOI layers after high energy implantation 26
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose 26
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 26
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 25
Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation 24
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 23
Uphill diffusion of ultra low energy boron implants in preamorphised silicon and silicon on insulator 23
Diffusion and electrical activation of indium in silicon 23
Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC 23
Investigation on indium diffusion in silicon 22
Damage and recovery in doped SOI layers after high energy implantation 22
Electrical activation of B in the presence of boron-interstitials clusters 22
MOS capacitors fabricated on (0001) 4H-SiC implanted with N+ ions 21
Strumento innovativo multiparametrico per il monitoraggio aerodinamico della qualità dell'aria (SIMAQ) - Rapporto finale 20
Features of arsenic clusters in silicon 19
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 19
Boron-Interstitial cluster kinetics: extraction of binding energies from dedicated experiments 19
Totale 3.295
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Categoria #
all - tutte 12.394
article - articoli 7.056
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 150
Totale 19.600
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202432 0 0 0 0 0 0 0 0 2 6 24 0
2024/20251.103 3 8 112 45 213 32 4 66 6 53 303 258
2025/20261.749 98 155 165 285 351 76 273 95 94 81 40 36
2026/2027411 98 94 219 0 0 0 0 0 0 0 0 0
Totale 3.295