CNR Institutional Research Information System

SOLMI, SANDRO
 Distribuzione geografica
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Continente #
AS - Asia 29
EU - Europa 3
Totale 32
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Nazione #
CN - Cina 19
KR - Corea 5
SG - Singapore 5
IT - Italia 3
Totale 32
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Città #
Guangzhou 11
Seoul 5
Singapore 4
Bologna 3
Totale 23
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Nome #
A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY 8
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 2
Arsenic uphill diffusion during shallow junction formation 2
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 1
Encyclopedia of Materials: Science and technology 1
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 1
Damage and recovery in doped SOI layers after high energy implantation 1
Recovery of the carrier density in arsenic-doped silicon after high energy 2 MeV Si¿ implantation 1
Damage and recovery in boron doped SOI layers after high energy implantation 1
Behaviour of low energy As ions implanted in Si through a thin oxide layer 1
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 1
Damage and recovery in doped SOI layers after high energy implantation 1
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 1
Clustering equilibrium and deactivation kinetics in arsenic doped silicon 1
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1
Diffusion and electrical activation of indium in silicon 1
Damage and recovery in doped SOI layers after high energy implantation 1
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 1
Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation 1
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 1
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 1
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 1
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 1
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 1
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators 1
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 1
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 1
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 1
Totale 37
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Categoria #
all - tutte 1.058
article - articoli 605
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 13
Totale 1.676
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202432 0 0 0 0 0 0 0 0 2 6 24 0
2024/20255 3 2 0 0 0 0 0 0 0 0 0 0
Totale 37