CNR Institutional Research Information System

SOLMI, SANDRO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 1.572
NA - Nord America 715
EU - Europa 279
SA - Sud America 253
AF - Africa 23
Totale 2.842
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 684
SG - Singapore 656
CN - Cina 401
BR - Brasile 214
VN - Vietnam 164
HK - Hong Kong 147
FR - Francia 104
KR - Corea 67
NL - Olanda 32
JP - Giappone 31
IT - Italia 29
DE - Germania 28
IN - India 27
FI - Finlandia 23
GB - Regno Unito 22
AR - Argentina 14
BD - Bangladesh 13
ID - Indonesia 13
MX - Messico 13
CA - Canada 11
IL - Israele 11
IQ - Iraq 11
ZA - Sudafrica 9
PL - Polonia 7
PY - Paraguay 6
SE - Svezia 6
TR - Turchia 6
EC - Ecuador 5
ES - Italia 5
TN - Tunisia 5
UZ - Uzbekistan 5
CO - Colombia 4
RO - Romania 4
UA - Ucraina 4
PE - Perù 3
RU - Federazione Russa 3
SA - Arabia Saudita 3
VE - Venezuela 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
AZ - Azerbaigian 2
CL - Cile 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
HU - Ungheria 2
JO - Giordania 2
LB - Libano 2
MY - Malesia 2
PK - Pakistan 2
UY - Uruguay 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BE - Belgio 1
BH - Bahrain 1
BY - Bielorussia 1
CH - Svizzera 1
CR - Costa Rica 1
GR - Grecia 1
HN - Honduras 1
JM - Giamaica 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
LU - Lussemburgo 1
MA - Marocco 1
MZ - Mozambico 1
NI - Nicaragua 1
NP - Nepal 1
PA - Panama 1
SN - Senegal 1
Totale 2.842
Salva come PNG Salva come JPEG
Città #
Singapore 384
Santa Clara 238
Hefei 158
Hong Kong 144
Lauterbourg 83
San Jose 79
Beijing 78
Ho Chi Minh City 66
Seoul 66
Ashburn 64
Hanoi 37
Los Angeles 29
Dallas 22
Tokyo 21
Buffalo 16
Helsinki 16
New York 14
Frankfurt am Main 11
Guangzhou 11
São Paulo 11
Da Nang 10
Chicago 8
Milan 8
Minamishinagawa 8
Rio de Janeiro 8
Belo Horizonte 7
Orem 7
Turku 7
Bengaluru 6
Haiphong 6
Brooklyn 5
Curitiba 5
Elk Grove Village 5
Falkenstein 5
Stockholm 5
Toronto 5
Warsaw 5
Asunción 4
Bologna 4
Bắc Giang 4
Johannesburg 4
Munich 4
Osasco 4
Biên Hòa 3
Brasília 3
Bình Dương 3
Chennai 3
City of London 3
Dhaka 3
Düsseldorf 3
Guarulhos 3
Houston 3
Lagoa Santa 3
London 3
Manchester 3
Mexico City 3
Paris 3
Pittsburgh 3
Recife 3
Ribeirão Preto 3
Salvador 3
San Francisco 3
Shanghai 3
Thái Bình 3
Amman 2
Ankara 2
Atlanta 2
Baghdad 2
Baku 2
Boston 2
Bình Dương Province 2
Cairo 2
Campinas 2
Cape Town 2
Carapicuíba 2
Catalão 2
Criciúma 2
Denver 2
Fortaleza 2
Isidro Casanova 2
Istanbul 2
Jaú 2
Jeddah 2
Joinville 2
Juiz de Fora 2
Juneau 2
Lima 2
Lombard 2
Luanda 2
Madrid 2
Memphis 2
Montevideo 2
Natal 2
Northampton 2
Philadelphia 2
Phoenix 2
Poplar 2
Porto Alegre 2
Querétaro 2
Quito 2
Totale 1.817
Salva come PNG Salva come JPEG
Nome #
Characterization of MOS capacitors fabricated on n-type 4H-SiC 73
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 67
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 65
Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si 60
Encyclopedia of Materials: Science and technology 56
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 53
Damage and recovery in doped SOI layers after high energy implantation 52
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 52
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 46
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 45
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 45
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 44
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 43
A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY 42
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 42
Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing 42
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 42
Ultradense silicon nanowire arrays produced via top-down planar technology 41
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells 41
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 41
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 41
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators 40
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 39
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 38
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 38
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 38
Sviluppo di un flusso di processo tecnologico per la realizzazione di rivelatori SPAD monolitici 38
Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy 38
Low temperature oxidation of SiC preamorphized by ion implantation 37
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 37
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 37
Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation 37
Recovery of the carrier density in arsenic-doped silicon after high energy 2 MeV Si¿ implantation 35
Realizzazione di nanofili di Si mediante processo top-down di crescita templata di poly-Si su wafer di Si, per applicazioni termoelettriche 35
Comparison between electron-beam and furnace rapid isothermal anneals of phosphorus-implanted solar cells 35
Thermoelectric properties of p and n-type nanocrystalline silicon nanowires with high doping levels 35
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 35
Crossbar architecture for tera scale integration 35
Phonon scattering enhancement in Si nanolayers 34
Phonon scattering enhancement in silicon nanolayers 34
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 33
Indium in silicon: a study on diffusion and electrical activation 32
Processo di ossidazione di semiconduttori in carburo di silicio 31
Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation 31
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 31
Fabrication and Thermoelectric Characterization of Surface-Micromachined Silicon Nanowires 31
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires 31
Passivation by N implantation of the SiO2/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability 31
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 30
Clustering equilibrium and deactivation kinetics in arsenic doped silicon 28
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states 28
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 27
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 27
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 26
Damage and recovery in boron doped SOI layers after high energy implantation 26
Arsenic uphill diffusion during shallow junction formation 26
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 25
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose 25
Fabbricazione di MOSFET ad elevata mobilità su 4H-SiC 24
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions 24
Damage and recovery in doped SOI layers after high energy implantation 24
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET 24
Damage recovery in boron doped silicon on insulator layers after high energy Si+ implantation 23
MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen 23
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 23
Boron pile-up phenomena during ultra shallow junction formation 22
Damage and recovery in arsenic doped silicon after high energy Si+ implantation 22
Transient enhanced diffusion of arsenic in silicon 22
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 22
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si+ and As+ ions 22
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 22
Behaviour of low energy As ions implanted in Si through a thin oxide layer 21
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 20
Damage and recovery in doped SOI layers after high energy implantation 20
Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation 20
Strumento innovativo multiparametrico per il monitoraggio aerodinamico della qualità dell'aria (SIMAQ) - Rapporto finale 19
Investigation on indium diffusion in silicon 19
Diffusion and electrical activation of indium in silicon 19
Electrical activation of B in the presence of boron-interstitials clusters 19
Uphill diffusion of ultra low energy boron implants in preamorphised silicon and silicon on insulator 18
Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC 18
MOS capacitors fabricated on (0001) 4H-SiC implanted with N+ ions 18
Features of arsenic clusters in silicon 17
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 16
Boron-Interstitial cluster kinetics: extraction of binding energies from dedicated experiments 15
Totale 2.847
Salva come PNG Salva come JPEG
Categoria #
all - tutte 9.836
article - articoli 5.601
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 128
Totale 15.565
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202432 0 0 0 0 0 0 0 0 2 6 24 0
2024/20251.103 3 8 112 45 213 32 4 66 6 53 303 258
2025/20261.712 98 155 165 285 351 76 273 95 94 81 39 0
Totale 2.847