CNR Institutional Research Information System

DI FRANCO, SALVATORE
 Distribuzione geografica
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Continente #
AS - Asia 1.999
NA - Nord America 1.376
EU - Europa 461
SA - Sud America 308
Continente sconosciuto - Info sul continente non disponibili 99
AF - Africa 27
OC - Oceania 1
Totale 4.271
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Nazione #
US - Stati Uniti d'America 1.317
SG - Singapore 802
CN - Cina 511
BR - Brasile 234
VN - Vietnam 233
HK - Hong Kong 162
IT - Italia 138
FR - Francia 96
KR - Corea 88
BD - Bangladesh 46
FI - Finlandia 41
JP - Giappone 40
NL - Olanda 40
IN - India 32
CA - Canada 31
GB - Regno Unito 30
DE - Germania 29
AR - Argentina 27
CO - Colombia 16
IL - Israele 16
EC - Ecuador 15
PL - Polonia 14
ES - Italia 11
ID - Indonesia 11
MX - Messico 10
IQ - Iraq 8
SE - Svezia 8
TR - Turchia 7
UA - Ucraina 7
ZA - Sudafrica 7
RU - Federazione Russa 6
AT - Austria 5
KE - Kenya 5
PH - Filippine 5
TH - Thailandia 5
CH - Svizzera 4
CL - Cile 4
JM - Giamaica 4
JO - Giordania 4
PE - Perù 4
PK - Pakistan 4
VE - Venezuela 4
AE - Emirati Arabi Uniti 3
BG - Bulgaria 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
EG - Egitto 3
IE - Irlanda 3
LT - Lituania 3
MA - Marocco 3
PT - Portogallo 3
TT - Trinidad e Tobago 3
BE - Belgio 2
BH - Bahrain 2
BY - Bielorussia 2
CI - Costa d'Avorio 2
DZ - Algeria 2
GR - Grecia 2
HN - Honduras 2
KZ - Kazakistan 2
NI - Nicaragua 2
OM - Oman 2
PY - Paraguay 2
RO - Romania 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TW - Taiwan 2
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BM - Bermuda 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BW - Botswana 1
CM - Camerun 1
CY - Cipro 1
DK - Danimarca 1
EE - Estonia 1
GT - Guatemala 1
KG - Kirghizistan 1
KW - Kuwait 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MG - Madagascar 1
MM - Myanmar 1
MN - Mongolia 1
MY - Malesia 1
MZ - Mozambico 1
NP - Nepal 1
PA - Panama 1
PR - Porto Rico 1
QA - Qatar 1
RS - Serbia 1
SC - Seychelles 1
SI - Slovenia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 4.172
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Città #
Singapore 478
San Jose 242
Hefei 224
Santa Clara 214
Hong Kong 161
Ashburn 128
Beijing 106
Ho Chi Minh City 84
Seoul 84
Lauterbourg 80
Los Angeles 64
Hanoi 54
Cavallino 26
Dallas 26
Buffalo 22
New York 19
Tokyo 19
Lappeenranta 18
São Paulo 17
Haiphong 15
Helsinki 14
Orem 13
Frankfurt am Main 11
Milan 11
Minamishinagawa 11
Bengaluru 10
Catania 10
Phoenix 10
Rome 10
Brooklyn 9
Chicago 9
Turku 9
Warsaw 9
Brasília 8
Council Bluffs 8
Miami 8
Atlanta 7
Chennai 7
Da Nang 7
Stockholm 7
Boston 6
Figino 6
Las Vegas 6
Messina 6
Montreal 6
Osaka 6
Seattle 6
Toronto 6
Washington 6
Belo Horizonte 5
Campinas 5
Can Tho 5
Charlotte 5
Houston 5
Manchester 5
Medellín 5
Mumbai 5
Naples 5
Quito 5
The Bronx 5
Wuhan 5
Amman 4
Buenos Aires 4
Calgary 4
Curitiba 4
Guayaquil 4
Katy 4
Kingston 4
Orlando 4
Phủ Lý 4
Queens 4
Tel Aviv 4
Thái Bình 4
Trieste 4
Akron 3
Alexandria 3
Amsterdam 3
Augusta 3
Baghdad 3
Bangkok 3
Birmingham 3
Bologna 3
Bắc Ninh 3
Camaçari 3
City of London 3
Dublin 3
Hải Dương 3
Johannesburg 3
Kyiv 3
Lisbon 3
London 3
Lucknow 3
Mar del Plata 3
Merlo 3
Mexico City 3
Munich 3
Nairobi 3
Newark 3
Ninh Bình 3
Omaha 3
Totale 2.513
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 116
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 108
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 104
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 98
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 94
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 85
Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions 69
Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector 67
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 67
Current-induced defect formation in multi-walled carbon nanotubes 66
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 65
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 64
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 63
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 62
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 62
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 61
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 60
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 60
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 60
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 59
Large-Area SiC-UV Photodiode for Spectroscopy Portable System 59
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 59
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 58
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 58
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 56
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 55
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy 54
Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction 54
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 53
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 53
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 53
4H-SiC Detector in High Photons and Ions Irradiation Regime 53
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 52
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 52
Microscopic mechanisms of graphene electrolytic delamination from metal substrates 50
Ni/Heavily-Doped 4H-SiC Schottky Contacts 50
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 49
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 49
Large area visible blind 4H-SiC P+/N UV photodiode obtained by Aluminium implantation 48
Potentialities of nickel oxide as dielectric for GaN and SiC devices 45
Molecular Doping applied to Si Nanowires array based Solar Cells 45
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 45
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 45
UV-A Sensor Based on 6H-SiC Schottky Photodiode 44
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 42
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 41
Nanofabrication processes for innovative nanohole-based solar cells 39
New achievements on CVD based methods for SIC epitaxial growth 38
Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures 38
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 38
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts 37
4H-SiC schottky array photodiodes for UV imaging application based on the pinch-off surface effect 36
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 35
Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN 35
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films 33
Visible Blind 4H-SiC P+-N UV Photodiode Obtained by Al Implantation 33
Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage 33
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 32
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 32
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer 31
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 31
Silicon carbide: Defects and devices 29
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN 29
X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions 29
Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes 28
Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results 28
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 28
Realizzazzione di micro-strutture per la determinazione dello stress nell'etero-epitassia 3C-SiC/Si 28
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures 28
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors 28
Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC 27
On the viability of Au/3C-SiC Schottky barrier diodes 27
Impact of phosphorus implantation on the electrical properties of SiO2/4H-SiC interfaces annealed in N2O 27
Advances in the fabrication of graphene transistors on flexible substrates 27
Epitaxial layers grown with HCl addition: A comparison with the standard process 27
Schottky barrier lowering in 4H-SiC Schottky UV detector 26
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 26
Elecrical activity and device limitations of defects in 3C-SiC 25
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC 25
Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC 25
High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization 25
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures 25
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure 25
Evolution of the electrical behaviour of GaN and AlGaN materials after high temperature annealing and thermal oxidation 24
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization 24
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier 24
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111) 24
Metodo per proteggere la superficie del 4H-SiC durante processi termici ad alta temperatura 24
Correlation between nanoscale and macroscopic properties of ohmic and Schottky contacts on n-type GaN 23
Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure 22
Novel Electrochemical Patterning Method of Silicon Carbide 22
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate. 22
Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs 22
Very High Growth Rate Epitaxy Processes with Chlorine Addition 21
Impact of surface morphology on the electrical properties of Al/Ti Ohmic contacts on Al-implanted 4H-SiC 20
Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces 20
Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films 19
SiC Detector for Sub-MeV Alpha Spectrometry 18
Surface corrugation and stacking misorientation in multilayers of graphene on Nickel 17
Totale 4.271
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Categoria #
all - tutte 15.550
article - articoli 14.147
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.697
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202410 0 0 0 0 0 0 0 0 0 0 10 0
2024/20251.377 2 7 103 41 198 105 73 91 52 49 354 302
2025/20262.370 143 257 201 356 400 107 403 118 112 122 100 51
2026/2027514 136 88 290 0 0 0 0 0 0 0 0 0
Totale 4.271