CNR Institutional Research Information System

DI FRANCO, SALVATORE
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
AS - Asia 1.952
NA - Nord America 943
EU - Europa 407
SA - Sud America 279
AF - Africa 26
OC - Oceania 1
Totale 3.608
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 908
SG - Singapore 801
CN - Cina 507
VN - Vietnam 230
BR - Brasile 223
HK - Hong Kong 162
IT - Italia 107
FR - Francia 94
KR - Corea 88
FI - Finlandia 41
NL - Olanda 40
JP - Giappone 39
IN - India 31
DE - Germania 27
AR - Argentina 22
GB - Regno Unito 22
CA - Canada 20
BD - Bangladesh 19
IL - Israele 16
PL - Polonia 14
CO - Colombia 10
EC - Ecuador 10
MX - Messico 9
ID - Indonesia 8
IQ - Iraq 8
SE - Svezia 8
ES - Italia 7
TR - Turchia 7
ZA - Sudafrica 7
RU - Federazione Russa 6
UA - Ucraina 6
AT - Austria 5
KE - Kenya 5
CL - Cile 4
JO - Giordania 4
PE - Perù 4
AE - Emirati Arabi Uniti 3
BG - Bulgaria 3
CZ - Repubblica Ceca 3
EG - Egitto 3
MA - Marocco 3
PK - Pakistan 3
PT - Portogallo 3
TH - Thailandia 3
BH - Bahrain 2
CH - Svizzera 2
CI - Costa d'Avorio 2
DZ - Algeria 2
GR - Grecia 2
IE - Irlanda 2
JM - Giamaica 2
KZ - Kazakistan 2
LT - Lituania 2
OM - Oman 2
PH - Filippine 2
PY - Paraguay 2
RO - Romania 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
VE - Venezuela 2
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BE - Belgio 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
CM - Camerun 1
CR - Costa Rica 1
CY - Cipro 1
DK - Danimarca 1
EE - Estonia 1
KG - Kirghizistan 1
KW - Kuwait 1
LB - Libano 1
LV - Lettonia 1
MD - Moldavia 1
MG - Madagascar 1
MM - Myanmar 1
MN - Mongolia 1
MY - Malesia 1
MZ - Mozambico 1
NI - Nicaragua 1
QA - Qatar 1
RS - Serbia 1
SI - Slovenia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 3.608
Salva come PNG Salva come JPEG
Città #
Singapore 477
Hefei 223
Santa Clara 202
San Jose 197
Hong Kong 161
Beijing 106
Ho Chi Minh City 84
Seoul 84
Lauterbourg 80
Ashburn 64
Los Angeles 60
Hanoi 52
Cavallino 26
Dallas 26
Tokyo 19
Buffalo 18
Lappeenranta 18
São Paulo 16
Haiphong 15
New York 15
Helsinki 14
Orem 13
Frankfurt am Main 11
Minamishinagawa 11
Bengaluru 10
Catania 10
Phoenix 9
Turku 9
Warsaw 9
Brooklyn 7
Chennai 7
Council Bluffs 7
Stockholm 7
Da Nang 6
Messina 6
Osaka 6
Rome 6
Toronto 6
Atlanta 5
Belo Horizonte 5
Campinas 5
Can Tho 5
Montreal 5
Wuhan 5
Amman 4
Boston 4
Brasília 4
Curitiba 4
Milan 4
Mumbai 4
Phủ Lý 4
Tel Aviv 4
Thái Bình 4
Trieste 4
Amsterdam 3
Baghdad 3
Buenos Aires 3
Bắc Ninh 3
Camaçari 3
City of London 3
Guayaquil 3
Hải Dương 3
Johannesburg 3
Kyiv 3
Lisbon 3
London 3
Lucknow 3
Mar del Plata 3
Medellín 3
Merlo 3
Mexico City 3
Munich 3
Nairobi 3
Naples 3
Ninh Bình 3
Quito 3
Quận Bình Thạnh 3
Quận Một 3
Rio de Janeiro 3
San Francisco 3
Seattle 3
Secaucus 3
Sofia 3
Thái Nguyên 3
Abidjan 2
Almaty 2
Augusta 2
Bangkok 2
Batna City 2
Biecz 2
Birmingham 2
Blumenau 2
Bologna 2
Bratislava 2
Bucharest 2
Burnley 2
Bình Dương 2
Bến Lức 2
Cairo 2
Calgary 2
Totale 2.289
Salva come PNG Salva come JPEG
Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 113
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 98
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 93
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 88
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 70
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 66
Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions 62
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 61
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 58
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 56
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 56
Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector 56
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 56
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 54
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 54
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 53
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 53
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy 52
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 52
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 51
Current-induced defect formation in multi-walled carbon nanotubes 51
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 50
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 49
Large-Area SiC-UV Photodiode for Spectroscopy Portable System 49
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 48
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 48
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 48
Large area visible blind 4H-SiC P+/N UV photodiode obtained by Aluminium implantation 46
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 46
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 45
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 45
Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction 45
Microscopic mechanisms of graphene electrolytic delamination from metal substrates 44
Ni/Heavily-Doped 4H-SiC Schottky Contacts 44
4H-SiC Detector in High Photons and Ions Irradiation Regime 43
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 41
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 41
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 40
Potentialities of nickel oxide as dielectric for GaN and SiC devices 39
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 39
Molecular Doping applied to Si Nanowires array based Solar Cells 38
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 37
New achievements on CVD based methods for SIC epitaxial growth 36
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 36
Nanofabrication processes for innovative nanohole-based solar cells 34
UV-A Sensor Based on 6H-SiC Schottky Photodiode 34
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 34
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts 33
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 32
4H-SiC schottky array photodiodes for UV imaging application based on the pinch-off surface effect 32
Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures 31
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer 30
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 30
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films 29
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 29
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 27
Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes 26
Visible Blind 4H-SiC P+-N UV Photodiode Obtained by Al Implantation 26
Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage 26
X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions 25
Impact of phosphorus implantation on the electrical properties of SiO2/4H-SiC interfaces annealed in N2O 24
Realizzazzione di micro-strutture per la determinazione dello stress nell'etero-epitassia 3C-SiC/Si 24
Elecrical activity and device limitations of defects in 3C-SiC 23
Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN 23
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 23
On the viability of Au/3C-SiC Schottky barrier diodes 23
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier 23
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN 23
Advances in the fabrication of graphene transistors on flexible substrates 23
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures 23
Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results 22
Silicon carbide: Defects and devices 22
Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC 22
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 22
Epitaxial layers grown with HCl addition: A comparison with the standard process 22
Metodo per proteggere la superficie del 4H-SiC durante processi termici ad alta temperatura 22
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC 21
Evolution of the electrical behaviour of GaN and AlGaN materials after high temperature annealing and thermal oxidation 21
Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC 21
High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization 21
Schottky barrier lowering in 4H-SiC Schottky UV detector 21
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures 21
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure 21
Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure 20
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization 20
Correlation between nanoscale and macroscopic properties of ohmic and Schottky contacts on n-type GaN 20
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors 20
Impact of surface morphology on the electrical properties of Al/Ti Ohmic contacts on Al-implanted 4H-SiC 19
Novel Electrochemical Patterning Method of Silicon Carbide 19
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111) 19
Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces 18
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate. 18
Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films 17
Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs 17
SiC Detector for Sub-MeV Alpha Spectrometry 16
Very High Growth Rate Epitaxy Processes with Chlorine Addition 15
Surface corrugation and stacking misorientation in multilayers of graphene on Nickel 12
Totale 3.707
Salva come PNG Salva come JPEG
Categoria #
all - tutte 12.679
article - articoli 11.553
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.232
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202410 0 0 0 0 0 0 0 0 0 0 10 0
2024/20251.377 2 7 103 41 198 105 73 91 52 49 354 302
2025/20262.320 143 257 201 356 400 107 403 118 112 122 100 1
Totale 3.707