CNR Institutional Research Information System

DI FRANCO, SALVATORE
 Distribuzione geografica
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Continente #
AS - Asia 1.624
NA - Nord America 649
SA - Sud America 268
EU - Europa 265
AF - Africa 22
Totale 2.828
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Nazione #
SG - Singapore 678
US - Stati Uniti d'America 621
CN - Cina 416
BR - Brasile 216
VN - Vietnam 174
HK - Hong Kong 143
KR - Corea 87
IT - Italia 83
NL - Olanda 39
FI - Finlandia 38
IN - India 23
AR - Argentina 22
JP - Giappone 21
DE - Germania 19
GB - Regno Unito 18
IL - Israele 16
CA - Canada 15
BD - Bangladesh 12
PL - Polonia 12
EC - Ecuador 9
MX - Messico 9
CO - Colombia 8
FR - Francia 8
ID - Indonesia 8
SE - Svezia 8
IQ - Iraq 7
ES - Italia 6
RU - Federazione Russa 6
KE - Kenya 5
TR - Turchia 5
AT - Austria 4
CL - Cile 4
JO - Giordania 4
PE - Perù 4
UA - Ucraina 4
ZA - Sudafrica 4
AE - Emirati Arabi Uniti 3
BG - Bulgaria 3
CZ - Repubblica Ceca 3
MA - Marocco 3
PK - Pakistan 3
BH - Bahrain 2
CI - Costa d'Avorio 2
DZ - Algeria 2
EG - Egitto 2
IE - Irlanda 2
JM - Giamaica 2
KZ - Kazakistan 2
OM - Oman 2
PY - Paraguay 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
TW - Taiwan 2
AL - Albania 1
AZ - Azerbaigian 1
BE - Belgio 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
CH - Svizzera 1
CM - Camerun 1
CR - Costa Rica 1
CY - Cipro 1
DK - Danimarca 1
EE - Estonia 1
GR - Grecia 1
KG - Kirghizistan 1
KW - Kuwait 1
LB - Libano 1
LT - Lituania 1
MD - Moldavia 1
MG - Madagascar 1
MM - Myanmar 1
MN - Mongolia 1
MY - Malesia 1
MZ - Mozambico 1
PH - Filippine 1
QA - Qatar 1
RO - Romania 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
UZ - Uzbekistan 1
VE - Venezuela 1
Totale 2.828
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Città #
Singapore 425
Hefei 223
Santa Clara 200
Hong Kong 143
Beijing 103
Seoul 84
Ho Chi Minh City 65
San Jose 61
Ashburn 43
Hanoi 37
Los Angeles 29
Cavallino 26
Dallas 26
Lappeenranta 16
São Paulo 16
Buffalo 15
Haiphong 13
Helsinki 13
Minamishinagawa 11
New York 11
Bengaluru 10
Catania 10
Turku 9
Warsaw 9
Phoenix 8
Tokyo 8
Brooklyn 7
Orem 7
Stockholm 7
Frankfurt am Main 6
Messina 6
Rome 6
Belo Horizonte 5
Campinas 5
Toronto 5
Amman 4
Atlanta 4
Boston 4
Brasília 4
Can Tho 4
Curitiba 4
Da Nang 4
Phủ Lý 4
Tel Aviv 4
Trieste 4
Amsterdam 3
Baghdad 3
Buenos Aires 3
Camaçari 3
Hải Dương 3
Lucknow 3
Mar del Plata 3
Merlo 3
Mexico City 3
Milan 3
Munich 3
Nairobi 3
Ninh Bình 3
Quito 3
Quận Bình Thạnh 3
Quận Một 3
Rio de Janeiro 3
San Francisco 3
Seattle 3
Secaucus 3
Sofia 3
Thái Bình 3
Thái Nguyên 3
Abidjan 2
Almaty 2
Augusta 2
Batna City 2
Birmingham 2
Bratislava 2
Burnley 2
Bình Dương 2
Bến Lức 2
Calgary 2
Campo Grande 2
Caruaru 2
Chennai 2
Chicago 2
Colatina 2
Correntes 2
Corrientes 2
Dublin 2
Düsseldorf 2
Franca 2
Gijang-gun 2
Guangzhou 2
Guarulhos 2
Guayaquil 2
Hortolândia 2
Houston 2
Itapema 2
Juiz de Fora 2
Juneau 2
Kingston 2
Lang Son 2
Lima 2
Totale 1.841
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 98
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 88
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures 86
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 78
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 56
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy 55
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures 51
Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions 50
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 48
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy 47
Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector 46
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 45
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 45
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer 45
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 44
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 44
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 43
Exploring UV-Laser Effects on Al-Implanted 4H-SiC 43
Large area visible blind 4H-SiC P+/N UV photodiode obtained by Aluminium implantation 42
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 41
Large-Area SiC-UV Photodiode for Spectroscopy Portable System 40
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 40
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings 39
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 36
Microscopic mechanisms of graphene electrolytic delamination from metal substrates 36
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) 36
Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction 36
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 36
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers 36
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC 35
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 35
4H-SiC Detector in High Photons and Ions Irradiation Regime 35
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 35
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 34
Metal/p-gan contacts on AlGaN/GaN heterostructures for normally-off HEMTs 34
Potentialities of nickel oxide as dielectric for GaN and SiC devices 33
A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells 33
Current-induced defect formation in multi-walled carbon nanotubes 32
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 32
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures 31
Molecular Doping applied to Si Nanowires array based Solar Cells 30
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures 30
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 29
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 29
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts 28
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 28
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 27
UV-A Sensor Based on 6H-SiC Schottky Photodiode 27
Ni/Heavily-Doped 4H-SiC Schottky Contacts 27
New achievements on CVD based methods for SIC epitaxial growth 26
Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates 26
Nanofabrication processes for innovative nanohole-based solar cells 26
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films 24
4H-SiC schottky array photodiodes for UV imaging application based on the pinch-off surface effect 24
Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures 23
Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) 23
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 23
Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes 22
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer 22
Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage 22
Visible Blind 4H-SiC P+-N UV Photodiode Obtained by Al Implantation 21
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures 21
Elecrical activity and device limitations of defects in 3C-SiC 19
On the viability of Au/3C-SiC Schottky barrier diodes 19
Schottky barrier lowering in 4H-SiC Schottky UV detector 19
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure 19
Impact of phosphorus implantation on the electrical properties of SiO2/4H-SiC interfaces annealed in N2O 19
Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results 17
Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC 17
High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization 17
Realizzazzione di micro-strutture per la determinazione dello stress nell'etero-epitassia 3C-SiC/Si 17
Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN 16
Silicon carbide: Defects and devices 16
Evolution of the electrical behaviour of GaN and AlGaN materials after high temperature annealing and thermal oxidation 16
Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC 16
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures 16
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN 16
Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality 16
X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions 16
Epitaxial layers grown with HCl addition: A comparison with the standard process 16
Study of Ti/Al-based Metal Contacts to p-type SiC and GaN 15
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC 15
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization 15
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier 15
Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films 15
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate. 15
Metodo per proteggere la superficie del 4H-SiC durante processi termici ad alta temperatura 15
Impact of surface morphology on the electrical properties of Al/Ti Ohmic contacts on Al-implanted 4H-SiC 14
Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces 14
Novel Electrochemical Patterning Method of Silicon Carbide 14
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111) 14
Advances in the fabrication of graphene transistors on flexible substrates 14
Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs 14
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors 14
Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure 13
Correlation between nanoscale and macroscopic properties of ohmic and Schottky contacts on n-type GaN 13
SiC Detector for Sub-MeV Alpha Spectrometry 12
Very High Growth Rate Epitaxy Processes with Chlorine Addition 11
Surface corrugation and stacking misorientation in multilayers of graphene on Nickel 11
Totale 2.927
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Categoria #
all - tutte 10.529
article - articoli 9.607
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.136
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202410 0 0 0 0 0 0 0 0 0 0 10 0
2024/20251.377 2 7 103 41 198 105 73 91 52 49 354 302
2025/20261.540 143 257 201 356 400 107 76 0 0 0 0 0
Totale 2.927