CNR Institutional Research Information System

FIORENZA, PATRICK
 Distribuzione geografica
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Continente #
AS - Asia 30
EU - Europa 8
NA - Nord America 1
Totale 39
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Nazione #
CN - Cina 22
IT - Italia 7
KR - Corea 5
SG - Singapore 3
NL - Olanda 1
US - Stati Uniti d'America 1
Totale 39
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Città #
Guangzhou 11
Seoul 5
Parma 3
Bologna 2
Palermo 2
Singapore 2
Amsterdam 1
Forest City 1
Totale 27
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Nome #
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 10
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 3
CaCu3TiO12 thin films on conductive oxide electrode: a comparative study between chemical and physical vapor deposition routes 2
Potentialities of nickel oxide as dielectric for GaN and SiC devices 2
Technologies for normally-off GaN HEMTs 2
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric 2
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 2
Challenges for energy efficient wide band gap semiconductors power devices 1
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 1
Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films 1
High capacitance density by CaCu3Ti4O12 thin films 1
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator 1
Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs 1
A nanoscale look in the channel of 4H-SiC lateral MOSFETs 1
Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors 1
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors 1
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 1
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments 1
Effects of thermal annealing processes in phosphorous implanted 4H-SiC layers 1
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review 1
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 1
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 1
Carbonization and transition layer effects on 3C-SiC film residual stress 1
3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor 1
CaCu3Ti4O12, a novel material for capacitive applications: thin film growth and characterization 1
Praseodymium based dielectrics: Metal-Organic Chemical Vapor Deposition (MOCVD) growth, characterization and applications 1
Totale 42
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Categoria #
all - tutte 1.318
article - articoli 1.134
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 41
Totale 2.493
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202431 0 0 0 0 0 0 0 0 0 0 29 2
2024/202511 11 0 0 0 0 0 0 0 0 0 0 0
Totale 42