CNR Institutional Research Information System

FIORENZA, PATRICK
 Distribuzione geografica
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Continente #
AS - Asia 3.247
NA - Nord America 1.113
SA - Sud America 603
EU - Europa 591
AF - Africa 67
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 1
Totale 5.630
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Nazione #
SG - Singapore 1.309
US - Stati Uniti d'America 1.048
CN - Cina 818
BR - Brasile 477
HK - Hong Kong 341
VN - Vietnam 277
IT - Italia 244
KR - Corea 190
FI - Finlandia 81
IN - India 68
NL - Olanda 61
AR - Argentina 47
DE - Germania 39
JP - Giappone 39
GB - Regno Unito 36
IL - Israele 30
ID - Indonesia 27
FR - Francia 22
MX - Messico 22
EC - Ecuador 21
IQ - Iraq 20
BD - Bangladesh 19
CA - Canada 19
PL - Polonia 18
CO - Colombia 16
ZA - Sudafrica 16
RU - Federazione Russa 13
ES - Italia 12
KE - Kenya 11
PE - Perù 10
PY - Paraguay 10
SA - Arabia Saudita 10
AE - Emirati Arabi Uniti 9
CL - Cile 9
EG - Egitto 9
TH - Thailandia 9
TR - Turchia 9
UZ - Uzbekistan 9
UA - Ucraina 8
AT - Austria 7
MA - Marocco 7
PH - Filippine 7
PK - Pakistan 7
SE - Svezia 7
IE - Irlanda 6
TN - Tunisia 6
UY - Uruguay 6
AZ - Azerbaigian 5
BG - Bulgaria 5
DK - Danimarca 5
JO - Giordania 5
MY - Malesia 5
NP - Nepal 5
TW - Taiwan 5
VE - Venezuela 5
CR - Costa Rica 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
LB - Libano 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
OM - Oman 4
PA - Panama 4
RO - Romania 4
AU - Australia 3
CI - Costa d'Avorio 3
CZ - Repubblica Ceca 3
HN - Honduras 3
JM - Giamaica 3
KG - Kirghizistan 3
TT - Trinidad e Tobago 3
BO - Bolivia 2
GM - Gambi 2
IR - Iran 2
KW - Kuwait 2
LT - Lituania 2
MD - Moldavia 2
NO - Norvegia 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
AO - Angola 1
BB - Barbados 1
BE - Belgio 1
BF - Burkina Faso 1
BH - Bahrain 1
BW - Botswana 1
BY - Bielorussia 1
GE - Georgia 1
GT - Guatemala 1
HR - Croazia 1
HU - Ungheria 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LC - Santa Lucia 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LY - Libia 1
MK - Macedonia 1
Totale 5.621
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Città #
Singapore 839
Hefei 462
Hong Kong 341
Santa Clara 339
Seoul 188
Beijing 158
Ho Chi Minh City 96
Ashburn 84
San Jose 73
Hanoi 72
Dallas 65
Los Angeles 56
Cavallino 48
Lappeenranta 41
São Paulo 32
Buffalo 29
Minamishinagawa 29
Catania 28
Messina 25
Bengaluru 23
Helsinki 22
New York 22
Haiphong 16
Turku 16
Rio de Janeiro 15
Warsaw 15
Casale sul Sile 14
Curitiba 13
Guangzhou 12
Milan 11
Bologna 10
Miami 10
Seattle 10
Baghdad 9
Bangkok 9
Belo Horizonte 9
Brooklyn 9
Da Nang 9
Falkenstein 9
Munich 9
Nairobi 9
Phoenix 9
Quito 9
Brasília 8
Campinas 8
Jakarta 8
Palermo 8
Rome 8
Tashkent 8
Tokyo 8
Chennai 7
Guarulhos 7
Johannesburg 7
Lima 7
Orem 7
Padova 7
Quận Một 7
Recife 7
Thái Bình 7
Buenos Aires 6
Frankfurt am Main 6
Montreal 6
Poplar 6
Ribeirão Preto 6
San Francisco 6
Stockholm 6
Amman 5
Amsterdam 5
Asunción 5
Baku 5
Biên Hòa 5
Cairo 5
Denver 5
Dhaka 5
Dublin 5
Hải Dương 5
Istanbul 5
Manaus 5
Naples 5
Ninh Bình 5
Phủ Lý 5
Portsmouth 5
São Gonçalo 5
Anápolis 4
Atlanta 4
Caracas 4
Carapicuíba 4
Caruaru 4
Criciúma 4
Dubai 4
Düsseldorf 4
Feira de Santana 4
Fortaleza 4
Guayaquil 4
Jeddah 4
Kuala Selangor 4
Manila 4
Mexico City 4
Montevideo 4
New Delhi 4
Totale 3.618
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 98
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 85
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors 79
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry 78
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 77
Nano-electrical characterization of praseodymium oxide on silicon by conductive atomic force microscopy (C-AFM) 74
Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO3 ceramics 67
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 67
Challenges for energy efficient wide band gap semiconductors power devices 66
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 66
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 58
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 56
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 56
High capacitance density by CaCu3Ti4O12 thin films 55
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 55
Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films 54
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 51
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 50
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 49
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 48
Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments 48
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 48
Thin films advanced dielectrics for high frequency applications: deposition, (nano)characterization and device fabrication 47
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy 47
Praseodymium based dielectrics: Metal-Organic Chemical Vapor Deposition (MOCVD) growth, characterization and applications 47
Experimental characterization of proteins immobilized on Si-based materials 46
CaCu3TiO12 thin films on conductive oxide electrode: a comparative study between chemical and physical vapor deposition routes 46
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 46
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 46
Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy 45
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 45
Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films 45
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 45
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 45
CaCu3Ti4O12 thin films for capacitive applications: MOCVD synthesis and nanoscopic microscopic characterization 44
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process 44
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 44
Study of behavior of p-gate in Power GaN under positive voltage 43
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 43
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 43
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 43
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 42
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 42
Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy 41
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 41
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions 41
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 41
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 41
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 40
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses 40
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 40
Processing Issues for Reliable 4H-SiC MOSFET 39
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 39
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 39
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity 38
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 37
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 37
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 37
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 37
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs 37
Selective Doping in Silicon Carbide Power Devices 37
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 36
Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability 36
From micro- to nanotransport properties in Pr2O3-based thin layers 35
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 35
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 35
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 35
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 34
Nanotechnology for Electronic Materials and Devices 34
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 34
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 33
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering 33
CaCu(3)Ti(4)O(12) single crystals: insights on growth and nanoscopic investigation 33
Potentialities of nickel oxide as dielectric for GaN and SiC devices 32
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs 32
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures 32
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 32
Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs 31
Impact of Morphological Features on the Dielectric Breakdown at SiO2/3C-SiC Interfaces 30
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 30
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 30
Carbonization and transition layer effects on 3C-SiC film residual stress 30
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 30
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 29
High capacitance density capacitors based on calcium copper titanate thin films grown by MOCVD 29
Status and prospects of cubic silicon carbide power electronics device technology 29
Effects of the growth rate on the quality of 4H silicon carbide films for MOSFET applications 29
Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer 28
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 28
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 28
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 28
Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress 27
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices 27
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 27
Ni/Heavily-Doped 4H-SiC Schottky Contacts 27
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 26
Colossal permittivity in advanced functional heterogeneous materials: the relevance of the local measurements at submicron scale 26
Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy 25
Technologies for normally-off GaN HEMTs 25
Voids-free 3C-SiC/Si interface for high quality epitaxial layer 25
Totale 4.210
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Categoria #
all - tutte 21.088
article - articoli 16.812
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 439
Totale 38.339
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202436 0 0 0 0 0 0 0 0 0 0 32 4
2024/20252.852 14 16 189 89 321 336 195 151 82 91 719 649
2025/20263.041 298 554 442 686 775 204 82 0 0 0 0 0
Totale 5.929