CNR Institutional Research Information System

FIORENZA, PATRICK
 Distribuzione geografica
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Continente #
AS - Asia 3.994
NA - Nord America 2.024
EU - Europa 922
SA - Sud America 651
Continente sconosciuto - Info sul continente non disponibili 303
AF - Africa 87
OC - Oceania 9
Totale 7.990
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Nazione #
US - Stati Uniti d'America 1.896
SG - Singapore 1.584
CN - Cina 1.028
BR - Brasile 497
HK - Hong Kong 397
VN - Vietnam 373
IT - Italia 321
FR - Francia 210
KR - Corea 192
FI - Finlandia 84
IN - India 81
JP - Giappone 79
NL - Olanda 67
DE - Germania 55
AR - Argentina 49
CA - Canada 49
GB - Regno Unito 49
BD - Bangladesh 47
ID - Indonesia 36
CO - Colombia 31
ZA - Sudafrica 31
IL - Israele 30
MX - Messico 27
EC - Ecuador 26
IQ - Iraq 22
PL - Polonia 18
ES - Italia 16
RU - Federazione Russa 15
CL - Cile 13
UA - Ucraina 13
TH - Thailandia 12
TR - Turchia 12
KE - Kenya 11
PH - Filippine 11
JM - Giamaica 10
PE - Perù 10
PY - Paraguay 10
SA - Arabia Saudita 10
AE - Emirati Arabi Uniti 9
CR - Costa Rica 9
EG - Egitto 9
MA - Marocco 9
UZ - Uzbekistan 9
IE - Irlanda 8
PK - Pakistan 8
AT - Austria 7
NP - Nepal 7
SE - Svezia 7
TT - Trinidad e Tobago 7
VE - Venezuela 7
BG - Bulgaria 6
HN - Honduras 6
JO - Giordania 6
MY - Malesia 6
TN - Tunisia 6
UY - Uruguay 6
AZ - Azerbaigian 5
DK - Danimarca 5
DZ - Algeria 5
RO - Romania 5
TW - Taiwan 5
AU - Australia 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
LB - Libano 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
OM - Oman 4
PA - Panama 4
BB - Barbados 3
CI - Costa d'Avorio 3
GT - Guatemala 3
KG - Kirghizistan 3
LT - Lituania 3
MD - Moldavia 3
SK - Slovacchia (Repubblica Slovacca) 3
AL - Albania 2
AO - Angola 2
BE - Belgio 2
BO - Bolivia 2
CH - Svizzera 2
GM - Gambi 2
GR - Grecia 2
HR - Croazia 2
IR - Iran 2
KW - Kuwait 2
NO - Norvegia 2
PT - Portogallo 2
QA - Qatar 2
SN - Senegal 2
AF - Afghanistan, Repubblica islamica di 1
BF - Burkina Faso 1
BH - Bahrain 1
BW - Botswana 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
GE - Georgia 1
HU - Ungheria 1
KH - Cambogia 1
Totale 7.670
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Città #
Singapore 956
Hefei 462
Hong Kong 390
Santa Clara 363
San Jose 358
Seoul 188
Ashburn 186
Lauterbourg 170
Beijing 167
Ho Chi Minh City 128
Los Angeles 124
Hanoi 97
Dallas 74
Cavallino 48
Lappeenranta 44
Tokyo 40
Buffalo 35
New York 35
São Paulo 33
Minamishinagawa 29
Catania 28
Messina 25
Bengaluru 23
Milan 23
Helsinki 22
Orem 20
Haiphong 19
Frankfurt am Main 16
Guangzhou 16
Turku 16
Montreal 15
Pretoria 15
Rio de Janeiro 15
Warsaw 15
Casale sul Sile 14
Da Nang 14
Phoenix 14
Rome 14
Curitiba 13
Atlanta 12
Council Bluffs 12
Chennai 11
Miami 11
Seattle 11
Baghdad 10
Bangkok 10
Bologna 10
Brasília 10
Brooklyn 10
Houston 10
Quito 10
Belo Horizonte 9
Falkenstein 9
Jakarta 9
Johannesburg 9
Mumbai 9
Munich 9
Nairobi 9
Palermo 9
Amsterdam 8
Campinas 8
Quận Một 8
Tashkent 8
Chicago 7
Denver 7
Dublin 7
Guarulhos 7
Hải Dương 7
Kingston 7
Lima 7
Naples 7
Padova 7
Recife 7
San José 7
Thái Bình 7
Amman 6
Buenos Aires 6
Guayaquil 6
Istanbul 6
Ninh Bình 6
Philadelphia 6
Phủ Lý 6
Poplar 6
Ribeirão Preto 6
San Diego 6
San Francisco 6
Shanghai 6
Stockholm 6
The Bronx 6
Asunción 5
Baku 5
Biên Hòa 5
Boardman 5
Bogotá 5
Cairo 5
Caracas 5
Dhaka 5
London 5
Manaus 5
Manchester 5
Totale 4.718
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Nome #
Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 114
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition 100
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry 98
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology 94
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors 92
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization 86
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 82
Nano-electrical characterization of praseodymium oxide on silicon by conductive atomic force microscopy (C-AFM) 80
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC 80
Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO3 ceramics 77
Challenges for energy efficient wide band gap semiconductors power devices 74
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 73
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 72
Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) 71
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 71
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 70
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 66
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 65
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 64
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 64
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN 62
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers 62
Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films 60
High capacitance density by CaCu3Ti4O12 thin films 60
Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments 60
Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations 60
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 60
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 59
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions 58
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates 58
Praseodymium based dielectrics: Metal-Organic Chemical Vapor Deposition (MOCVD) growth, characterization and applications 58
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 57
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 57
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 57
CaCu3TiO12 thin films on conductive oxide electrode: a comparative study between chemical and physical vapor deposition routes 57
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures 57
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide 56
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs 56
Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy 55
Properties of SiO2/4H-SiC interfaces with an oxide deposited by a high-temperature process 55
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 55
Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films 54
Experimental characterization of proteins immobilized on Si-based materials 54
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications 54
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 54
Study of behavior of p-gate in Power GaN under positive voltage 53
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC 53
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs 53
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices 53
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition 53
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy 52
Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 52
Effect of high temperature annealing (T > 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers 52
Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity 52
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures 52
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer 52
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs 52
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors 52
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses 51
Thin films advanced dielectrics for high frequency applications: deposition, (nano)characterization and device fabrication 50
CaCu3Ti4O12 thin films for capacitive applications: MOCVD synthesis and nanoscopic microscopic characterization 50
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates 50
Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy 49
CaCu(3)Ti(4)O(12) single crystals: insights on growth and nanoscopic investigation 49
An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures 48
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures 48
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates 48
Ni/Heavily-Doped 4H-SiC Schottky Contacts 48
Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) 47
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 47
Selective Doping in Silicon Carbide Power Devices 46
Processing Issues for Reliable 4H-SiC MOSFET 44
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 44
Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off HEMTs: Correlating Device Behavior with Nanoscale Interfaces Properties 44
From micro- to nanotransport properties in Pr2O3-based thin layers 43
Nanotechnology for Electronic Materials and Devices 43
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 43
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon 43
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review 43
Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability 41
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures 41
Carbonization and transition layer effects on 3C-SiC film residual stress 41
Highly homogeneous current transport in ultra-thin aluminum nitride (AlN) epitaxial films on gallium nitride (GaN) deposited by plasma enhanced atomic layer deposition 41
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering 41
High capacitance density capacitors based on calcium copper titanate thin films grown by MOCVD 40
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices 40
Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene 40
Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs 40
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices 40
Potentialities of nickel oxide as dielectric for GaN and SiC devices 39
Status and prospects of cubic silicon carbide power electronics device technology 39
Electrical properties of CeO2 thin films deposited on AlGaN/GaN heterostructure 38
Conduction mechanisms in epitaxial NiO gate dielectric on AlGaN/GaN heterostructure 37
Comparison Between Single Al2O3 Or HfO2 Single Dielectric Layers And Their Nanolaminated Systems 36
Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer 36
Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs 36
Micro and nanoscale electrical characterization of large-area graphene transferred to functional substrates 36
Voids-free 3C-SiC/Si interface for high quality epitaxial layer 35
Carrier transport in advanced semiconductor materials 35
Totale 5.515
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Categoria #
all - tutte 29.154
article - articoli 23.376
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 624
Totale 53.154
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202436 0 0 0 0 0 0 0 0 0 0 32 4
2024/20252.852 14 16 189 89 321 336 195 151 82 91 719 649
2025/20264.744 298 554 442 686 775 204 774 264 257 262 139 89
2026/2027358 257 101 0 0 0 0 0 0 0 0 0 0
Totale 7.990