CNR Institutional Research Information System

BOSI, MATTEO
 Distribuzione geografica
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Continente #
AS - Asia 3.942
NA - Nord America 2.223
SA - Sud America 926
EU - Europa 654
AF - Africa 81
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.836
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Nazione #
US - Stati Uniti d'America 2.105
SG - Singapore 1.646
CN - Cina 814
BR - Brasile 762
HK - Hong Kong 542
VN - Vietnam 418
IT - Italia 213
KR - Corea 186
NL - Olanda 82
DE - Germania 70
AR - Argentina 65
IN - India 62
GB - Regno Unito 58
MX - Messico 51
FI - Finlandia 48
JP - Giappone 40
CA - Canada 37
ID - Indonesia 35
BD - Bangladesh 32
AT - Austria 31
EC - Ecuador 31
IL - Israele 28
FR - Francia 27
IQ - Iraq 27
ZA - Sudafrica 24
TR - Turchia 20
CO - Colombia 19
PL - Polonia 17
RU - Federazione Russa 14
PY - Paraguay 13
UA - Ucraina 13
MA - Marocco 12
PK - Pakistan 12
VE - Venezuela 12
CL - Cile 11
BE - Belgio 10
EG - Egitto 9
AZ - Azerbaigian 8
NO - Norvegia 8
PH - Filippine 8
TT - Trinidad e Tobago 8
TW - Taiwan 8
AE - Emirati Arabi Uniti 7
ES - Italia 7
DZ - Algeria 6
IE - Irlanda 6
LT - Lituania 6
SA - Arabia Saudita 6
SE - Svezia 6
TN - Tunisia 6
AU - Australia 5
DO - Repubblica Dominicana 5
EE - Estonia 5
JO - Giordania 5
KE - Kenya 5
SK - Slovacchia (Repubblica Slovacca) 5
UZ - Uzbekistan 5
BO - Bolivia 4
CY - Cipro 4
NZ - Nuova Zelanda 4
PA - Panama 4
UY - Uruguay 4
AL - Albania 3
BA - Bosnia-Erzegovina 3
BH - Bahrain 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
HN - Honduras 3
HR - Croazia 3
KZ - Kazakistan 3
LY - Libia 3
NP - Nepal 3
OM - Oman 3
AO - Angola 2
BG - Bulgaria 2
BW - Botswana 2
CM - Camerun 2
ET - Etiopia 2
GE - Georgia 2
JM - Giamaica 2
KG - Kirghizistan 2
KH - Cambogia 2
KN - Saint Kitts e Nevis 2
LK - Sri Lanka 2
NI - Nicaragua 2
PE - Perù 2
RO - Romania 2
SR - Suriname 2
SY - Repubblica araba siriana 2
AM - Armenia 1
AW - Aruba 1
BB - Barbados 1
BF - Burkina Faso 1
BY - Bielorussia 1
DK - Danimarca 1
GD - Grenada 1
GH - Ghana 1
GR - Grecia 1
GT - Guatemala 1
GY - Guiana 1
Totale 7.817
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Città #
Singapore 1.041
Santa Clara 827
Hong Kong 537
Dallas 427
Hefei 391
Seoul 180
Beijing 177
Ho Chi Minh City 150
Hanoi 102
Ashburn 100
San Jose 82
Los Angeles 68
São Paulo 41
Buffalo 37
Parma 34
Rio de Janeiro 26
Helsinki 22
Guangzhou 21
Milan 21
Minamishinagawa 21
New York 20
Frankfurt am Main 19
Potenza 18
Bengaluru 17
Turku 17
Curitiba 16
Da Nang 16
Orem 16
Warsaw 16
Phoenix 15
Belo Horizonte 14
Brooklyn 14
Johannesburg 14
Baghdad 13
Brasília 13
Porto Alegre 13
Salvador 13
Biên Hòa 12
Dhaka 12
Düsseldorf 12
Haiphong 12
Mexico City 12
Bologna 11
Guayaquil 11
Nuremberg 11
Poplar 11
Denver 10
Montreal 10
Munich 10
Quito 10
Redondo Beach 10
Rome 10
Brussels 9
Lauterbourg 9
Santo André 9
Toronto 9
Vienna 9
Caxias do Sul 8
Chennai 8
Lappeenranta 8
London 8
Melegnano 8
Ribeirão Preto 8
Tokyo 8
Ankara 7
Bắc Ninh 7
Chicago 7
Cotia 7
Genoa 7
Guarulhos 7
Recife 7
Thái Bình 7
Thái Nguyên 7
Venice 7
Amsterdam 6
Atlanta 6
Baku 6
Boston 6
Bắc Giang 6
Contagem 6
Erbil 6
Jakarta 6
Modena 6
Nova Iguaçu 6
Querétaro 6
Quận Bình Thạnh 6
Stockholm 6
Americana 5
Amman 5
Cairo 5
Fortaleza 5
Goiânia 5
Houston 5
Hyderabad 5
Hải Dương 5
Maceió 5
Manchester 5
Mumbai 5
Nairobi 5
Poços de Caldas 5
Totale 5.047
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Nome #
Influence of organic promoter gradient on the MoS2growth dynamics 92
Thickness and temperature dependent photoluminescence from few-layer MoS2 91
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 83
Cubic Silicon Carbide Nanowires 80
Wettability of Silicon Carbide Nanowires 79
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 77
Direct growth of germanium nanowires on glass 76
Thermophotovoltaic Energy Conversion - PART 1: Analytical Aspects 75
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration 73
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 73
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 71
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 71
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 70
Strain Evaluation in SiC MEMS Test Structures 69
Si and Sn doping of epsilon-Ga2O3 layers 67
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires 67
Manuale di utilizzo - Reattore MOVPE 3 66
Growth of graphitic carbon layers around silicon carbide nanowires 64
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 64
Surface Functionalization of 3C-SiC Nanowires 61
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics 60
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition 60
SiC NWs grown on silicon substrate using Fe as catalyst 59
Silicon Carbide Nanowires 59
Growth and functionalization of carbon nanotubes for nitroaromatic explosive detection 59
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 58
Nanomechanical studies of doped InGaP/GaAs epilayers 57
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 57
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 57
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 56
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 56
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 55
Vapour Phase Epitaxy 55
Quantitative Nanoscale Absorption Mapping: A Novel Technique to Probe Optical Absorption of Two-Dimensional Materials 55
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 54
TEM and SEM-CL studies of SiC Nanowires 54
BAGNABILITA DI SUPERFICI BASATE SUL CARBURO DI SILICIO 54
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 53
Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition 53
3C-SiC nanowires and layers grown on Si: attractive material for biosensor applications 52
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 52
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 52
Curvature and stress analysis in 3C-SiC layers grown on (001) and (111) Si substrates 51
beta-SiC NWs grown on patterned and MEMS silicon substrates 51
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 51
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 50
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects 49
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 49
Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence 48
Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers 48
CBr4 as precursor for VPE growth of cubic silicon carbide 46
Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films 45
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 44
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films) 44
UnExploDe: Portable Sensors for Unmanned Explosive Detection 44
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 43
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 43
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers 42
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations 42
Energy System based on Integration between a Thermo-Photo-Voltaic generator and an Organic Rankine Cycle 41
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 41
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 41
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 41
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 41
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD 40
The effect of substrate type on SiC nanowire orientation 40
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 40
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 39
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors 39
Tuning the radial structure of core-shell silicon carbide nanowires 39
Analyis of InGaP/Ge Heteroepitaxy 38
Growth of SiC NWs by vapor phase technique using Fe as catalyst 38
Mechanical characterization of 3C-SiC grown on Si micromachined cantilever 38
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 38
Orientation of germanium nanowires on germanium and silicon substrates for nanodevices 38
Study of SnO/-Ga2O3p - N diodes in planar geometry 38
Cubic SiC Nanowires: Growth, Characterization and Applications 38
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 37
Germanium Nanowires as Sensing Devices: Modelization of Electrical Properties 37
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor 37
The real structure of Ga2O3 and its relation to epsilon-phase 37
Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures 37
Growth of 3C-SiC nanowires and layers on Si 37
Logic with memory: and gates made of organic and inorganic memristive devices 37
Synthesis, characterization and chemical functionalization of germanium nanowires 37
Synthesis of germanium nanowires and carbon nanotubes tailored to explosive detection 36
Synthesis and characterization of 3C-SiC nanowires 35
Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study 35
Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures 35
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion 35
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation 35
3C-SiC nanowires luminescence enhancement by coating with a conformal oxides layer 35
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 35
Influence of doping on the nanomechanical behavior of InGaP/Ge thin films 35
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 34
Germanium homoepitaxial cells for thermophotovoltaic systems 34
The electronic structure of epsilon-Ga2O3 34
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 34
Epitaxial germanium for photovoltaic or opto-electronic applications 34
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 34
Totale 5.010
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Categoria #
all - tutte 27.334
article - articoli 17.219
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.090
Totale 45.643
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202484 0 0 0 0 0 0 0 0 21 3 52 8
2024/20253.666 29 14 277 150 830 207 109 240 128 144 850 688
2025/20264.321 313 942 593 887 1.210 263 113 0 0 0 0 0
Totale 8.071