CNR Institutional Research Information System

BOSI, MATTEO
 Distribuzione geografica
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Continente #
AS - Asia 4.894
NA - Nord America 3.236
EU - Europa 1.129
SA - Sud America 971
AF - Africa 93
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 2
Totale 10.335
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Nazione #
US - Stati Uniti d'America 3.054
SG - Singapore 1.967
CN - Cina 1.074
BR - Brasile 792
HK - Hong Kong 595
VN - Vietnam 562
IT - Italia 327
FR - Francia 270
KR - Corea 192
DE - Germania 96
BD - Bangladesh 90
IN - India 87
NL - Olanda 87
JP - Giappone 86
GB - Regno Unito 82
CA - Canada 75
AR - Argentina 71
MX - Messico 54
FI - Finlandia 52
ID - Indonesia 41
AT - Austria 33
EC - Ecuador 31
IQ - Iraq 31
IL - Israele 28
ZA - Sudafrica 28
CO - Colombia 25
UA - Ucraina 21
PL - Polonia 20
TR - Turchia 20
ES - Italia 19
PK - Pakistan 17
RU - Federazione Russa 16
MA - Marocco 15
PH - Filippine 14
VE - Venezuela 14
PY - Paraguay 13
CL - Cile 11
SA - Arabia Saudita 11
AZ - Azerbaigian 10
BE - Belgio 10
CH - Svizzera 10
EG - Egitto 10
AE - Emirati Arabi Uniti 9
JM - Giamaica 9
TN - Tunisia 9
TT - Trinidad e Tobago 9
LT - Lituania 8
NO - Norvegia 8
TW - Taiwan 8
CZ - Repubblica Ceca 7
IE - Irlanda 7
SE - Svezia 7
UZ - Uzbekistan 7
AU - Australia 6
CR - Costa Rica 6
DZ - Algeria 6
HN - Honduras 6
SK - Slovacchia (Repubblica Slovacca) 6
DO - Repubblica Dominicana 5
EE - Estonia 5
JO - Giordania 5
KE - Kenya 5
MY - Malesia 5
RO - Romania 5
AL - Albania 4
BO - Bolivia 4
CY - Cipro 4
HR - Croazia 4
NP - Nepal 4
NZ - Nuova Zelanda 4
PA - Panama 4
UY - Uruguay 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BH - Bahrain 3
BW - Botswana 3
GR - Grecia 3
KZ - Kazakistan 3
LY - Libia 3
NI - Nicaragua 3
OM - Oman 3
PE - Perù 3
AO - Angola 2
CM - Camerun 2
ET - Etiopia 2
GE - Georgia 2
HU - Ungheria 2
KG - Kirghizistan 2
KH - Cambogia 2
KN - Saint Kitts e Nevis 2
LK - Sri Lanka 2
LV - Lettonia 2
MT - Malta 2
PS - Palestinian Territory 2
PT - Portogallo 2
SI - Slovenia 2
SR - Suriname 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
Totale 10.307
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Città #
Singapore 1.213
Santa Clara 855
Hong Kong 581
Dallas 434
Hefei 391
San Jose 279
Ashburn 221
Lauterbourg 216
Ho Chi Minh City 204
Beijing 188
Seoul 180
Los Angeles 129
Hanoi 125
New York 59
Buffalo 48
Tokyo 48
São Paulo 47
Milan 42
Orem 37
Frankfurt am Main 36
Parma 34
Rio de Janeiro 27
Council Bluffs 26
Da Nang 25
Guangzhou 25
Helsinki 23
Phoenix 23
Minamishinagawa 21
Montreal 21
Rome 19
Brooklyn 18
Curitiba 18
Johannesburg 18
Potenza 18
Baghdad 17
Bengaluru 17
Bologna 17
Toronto 17
Turku 17
Warsaw 17
Chennai 16
Haiphong 15
Nuremberg 15
Belo Horizonte 14
Dhaka 14
Biên Hòa 13
Brasília 13
Mexico City 13
Porto Alegre 13
Salvador 13
Chicago 12
Düsseldorf 12
London 12
Manchester 12
San Antonio 12
Atlanta 11
Bắc Ninh 11
Denver 11
Guayaquil 11
Paris 11
Poplar 11
Boardman 10
Hải Dương 10
Lappeenranta 10
Mumbai 10
Munich 10
Quito 10
Redondo Beach 10
Vienna 10
Brussels 9
Elk Grove Village 9
Genoa 9
Houston 9
Santo André 9
Thái Bình 9
Bogotá 8
Boston 8
Bến Tre 8
Caxias do Sul 8
Detroit 8
Kyiv 8
Las Vegas 8
Madrid 8
Melegnano 8
Ribeirão Preto 8
Shanghai 8
Thái Nguyên 8
Zurich 8
Amsterdam 7
Ankara 7
Baku 7
Bắc Giang 7
Calgary 7
Cotia 7
Guarulhos 7
Hangzhou 7
New Delhi 7
Ninh Bình 7
Quảng Ngãi 7
Recife 7
Totale 6.338
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Nome #
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 129
Thickness and temperature dependent photoluminescence from few-layer MoS2 108
Influence of organic promoter gradient on the MoS2growth dynamics 103
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 98
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 96
Cubic Silicon Carbide Nanowires 88
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 88
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 88
Wettability of Silicon Carbide Nanowires 86
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 86
Thermophotovoltaic Energy Conversion - PART 1: Analytical Aspects 85
Direct growth of germanium nanowires on glass 85
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration 84
Strain Evaluation in SiC MEMS Test Structures 80
BAGNABILITA DI SUPERFICI BASATE SUL CARBURO DI SILICIO 79
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 78
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires 76
Growth of graphitic carbon layers around silicon carbide nanowires 75
Growth and functionalization of carbon nanotubes for nitroaromatic explosive detection 75
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics 74
Si and Sn doping of epsilon-Ga2O3 layers 73
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 71
Vapour Phase Epitaxy 71
Manuale di utilizzo - Reattore MOVPE 3 70
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 70
Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition 70
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 70
SiC NWs grown on silicon substrate using Fe as catalyst 69
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 69
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition 69
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 69
Silicon Carbide Nanowires 68
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 67
Quantitative Nanoscale Absorption Mapping: A Novel Technique to Probe Optical Absorption of Two-Dimensional Materials 67
Surface Functionalization of 3C-SiC Nanowires 66
Influence of the growth conditions on the properties of germanium epilayers grown by MOVPE on Si 66
Curvature and stress analysis in 3C-SiC layers grown on (001) and (111) Si substrates 65
beta-SiC NWs grown on patterned and MEMS silicon substrates 65
The real structure of Ga2O3 and its relation to epsilon-phase 65
Nanomechanical studies of doped InGaP/GaAs epilayers 64
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 64
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 63
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 63
3C-SiC nanowires and layers grown on Si: attractive material for biosensor applications 62
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects 62
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 61
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors 61
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations 61
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 61
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 60
Epitaxial germanium for photovoltaic or opto-electronic applications 59
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films) 59
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 58
TEM and SEM-CL studies of SiC Nanowires 58
UnExploDe: Portable Sensors for Unmanned Explosive Detection 58
Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence 57
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 57
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD 57
Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers 56
CBr4 as precursor for VPE growth of cubic silicon carbide 56
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 56
The effect of substrate type on SiC nanowire orientation 56
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 55
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 54
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 54
The electronic structure of epsilon-Ga2O3 53
Growth of SiC NWs by vapor phase technique using Fe as catalyst 52
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 52
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 52
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 51
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 51
Tuning the radial structure of core-shell silicon carbide nanowires 51
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 51
Synthesis, characterization and chemical functionalization of germanium nanowires 51
Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films 50
Synthesis of germanium nanowires and carbon nanotubes tailored to explosive detection 50
Cubic SiC Nanowires: Growth, Characterization and Applications 50
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 49
Orientation of germanium nanowires on germanium and silicon substrates for nanodevices 49
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 49
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers 48
Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures 48
3C-SiC nanowires functionalized with porphyrins by supersonic molecular beams for photodynamic therapy 47
Germanium: Epitaxy and its applications 47
Energy System based on Integration between a Thermo-Photo-Voltaic generator and an Organic Rankine Cycle 46
Study of SnO/-Ga2O3p - N diodes in planar geometry 46
Growth of germanium nanowires with isobuthyl germane 46
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 46
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 45
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation 45
Growth of 3C-SiC nanowires and layers on Si 45
AFM morphological characterization and Raman study of germanium grown on (111)GaAs 45
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 44
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor 44
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion 44
Functionalization of SiC nanowires by supersonic molecular beams for photodynamic therapy 44
Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire 44
Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films 44
Logic with memory: and gates made of organic and inorganic memristive devices 43
Nanostrain Resolution Strain Sensing by Monocrystalline 3C-SiC on SOI Electrostatic MEMS Resonators 43
Totale 6.258
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Categoria #
all - tutte 35.905
article - articoli 22.687
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.410
Totale 60.002
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202484 0 0 0 0 0 0 0 0 21 3 52 8
2024/20253.666 29 14 277 150 830 207 109 240 128 144 850 688
2025/20266.529 313 942 593 887 1.210 263 881 317 349 401 190 183
2026/2027318 318 0 0 0 0 0 0 0 0 0 0 0
Totale 10.597