CNR Institutional Research Information System

BOSI, MATTEO
 Distribuzione geografica
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Continente #
AS - Asia 4.984
NA - Nord America 4.020
EU - Europa 1.210
SA - Sud America 1.040
Continente sconosciuto - Info sul continente non disponibili 265
AF - Africa 98
OC - Oceania 10
Totale 11.627
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Nazione #
US - Stati Uniti d'America 3.792
SG - Singapore 1.975
CN - Cina 1.082
BR - Brasile 815
HK - Hong Kong 598
VN - Vietnam 572
IT - Italia 375
FR - Francia 275
KR - Corea 194
BD - Bangladesh 104
DE - Germania 98
GB - Regno Unito 92
IN - India 90
CA - Canada 88
JP - Giappone 88
NL - Olanda 87
AR - Argentina 74
MX - Messico 58
ID - Indonesia 55
FI - Finlandia 52
CO - Colombia 49
EC - Ecuador 42
AT - Austria 33
IQ - Iraq 31
ZA - Sudafrica 29
IL - Israele 28
ES - Italia 22
UA - Ucraina 21
VE - Venezuela 21
PL - Polonia 20
TR - Turchia 20
PH - Filippine 19
PK - Pakistan 17
JM - Giamaica 16
RU - Federazione Russa 16
MA - Marocco 15
MY - Malesia 13
PY - Paraguay 13
CL - Cile 12
SA - Arabia Saudita 12
TT - Trinidad e Tobago 12
BE - Belgio 11
CR - Costa Rica 11
AE - Emirati Arabi Uniti 10
AZ - Azerbaigian 10
CH - Svizzera 10
EG - Egitto 10
CZ - Repubblica Ceca 9
HN - Honduras 9
IE - Irlanda 9
LT - Lituania 9
TN - Tunisia 9
TW - Taiwan 9
EE - Estonia 8
NO - Norvegia 8
UZ - Uzbekistan 8
JO - Giordania 7
SE - Svezia 7
AU - Australia 6
DZ - Algeria 6
NI - Nicaragua 6
SK - Slovacchia (Repubblica Slovacca) 6
AL - Albania 5
DO - Repubblica Dominicana 5
KE - Kenya 5
RO - Romania 5
SV - El Salvador 5
TH - Thailandia 5
BA - Bosnia-Erzegovina 4
BG - Bulgaria 4
BO - Bolivia 4
CY - Cipro 4
HR - Croazia 4
NP - Nepal 4
NZ - Nuova Zelanda 4
PA - Panama 4
UY - Uruguay 4
BH - Bahrain 3
BW - Botswana 3
GR - Grecia 3
GT - Guatemala 3
HU - Ungheria 3
KH - Cambogia 3
KZ - Kazakistan 3
LY - Libia 3
OM - Oman 3
PE - Perù 3
SC - Seychelles 3
XK - ???statistics.table.value.countryCode.XK??? 3
AO - Angola 2
BF - Burkina Faso 2
CM - Camerun 2
ET - Etiopia 2
GD - Grenada 2
GE - Georgia 2
KG - Kirghizistan 2
KN - Saint Kitts e Nevis 2
LK - Sri Lanka 2
LV - Lettonia 2
MT - Malta 2
Totale 11.327
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Città #
Singapore 1.215
Santa Clara 864
Hong Kong 582
Dallas 439
San Jose 417
Hefei 391
Ashburn 257
Lauterbourg 216
Ho Chi Minh City 208
Beijing 188
Seoul 180
Los Angeles 135
Hanoi 129
New York 65
Buffalo 50
Milan 50
Tokyo 50
São Paulo 47
Orem 37
Council Bluffs 36
Frankfurt am Main 36
Parma 34
Phoenix 33
Rio de Janeiro 28
Rome 26
Da Nang 25
Guangzhou 25
Chicago 24
Helsinki 23
Brooklyn 22
Montreal 22
Minamishinagawa 21
Bologna 19
Johannesburg 19
Las Vegas 19
Curitiba 18
Potenza 18
Baghdad 17
Bengaluru 17
Quito 17
Toronto 17
Turku 17
Warsaw 17
Atlanta 16
Brasília 16
Chennai 16
Dhaka 16
Haiphong 15
Houston 15
Manchester 15
Nuremberg 15
Belo Horizonte 14
Bogotá 14
Detroit 14
Mexico City 14
San Antonio 14
Biên Hòa 13
Guayaquil 13
Porto Alegre 13
Salvador 13
Denver 12
Düsseldorf 12
London 12
Miami 12
Washington 12
Bắc Ninh 11
Paris 11
Poplar 11
Venice 11
Boardman 10
Hải Dương 10
Kingston 10
Lappeenranta 10
Mumbai 10
Munich 10
Queens 10
Redondo Beach 10
Shanghai 10
Vienna 10
Boston 9
Brussels 9
Calgary 9
Elk Grove Village 9
Genoa 9
Madrid 9
Santo André 9
Thái Bình 9
Bến Tre 8
Catania 8
Caxias do Sul 8
Charlotte 8
Kyiv 8
Melegnano 8
Philadelphia 8
Recife 8
Ribeirão Preto 8
San José 8
Thái Nguyên 8
Zurich 8
Amsterdam 7
Totale 6.695
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Nome #
High quality 3C-SiC/Si grown on an optimized SiC buffer layer 134
Thickness and temperature dependent photoluminescence from few-layer MoS2 112
Influence of organic promoter gradient on the MoS2growth dynamics 106
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 100
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 98
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 97
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 95
Cubic Silicon Carbide Nanowires 92
Wettability of Silicon Carbide Nanowires 91
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition 90
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 90
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration 88
Direct growth of germanium nanowires on glass 88
Thermophotovoltaic Energy Conversion - PART 1: Analytical Aspects 87
Strain Evaluation in SiC MEMS Test Structures 85
BAGNABILITA DI SUPERFICI BASATE SUL CARBURO DI SILICIO 85
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires 82
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 82
Growth of graphitic carbon layers around silicon carbide nanowires 80
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition 79
Si and Sn doping of epsilon-Ga2O3 layers 78
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics 78
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 78
Growth and functionalization of carbon nanotubes for nitroaromatic explosive detection 78
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 78
Vapour Phase Epitaxy 77
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors 75
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction 74
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 74
Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition 74
The real structure of Ga2O3 and its relation to epsilon-phase 74
beta-SiC NWs grown on patterned and MEMS silicon substrates 73
Manuale di utilizzo - Reattore MOVPE 3 72
SiC NWs grown on silicon substrate using Fe as catalyst 72
Quantitative Nanoscale Absorption Mapping: A Novel Technique to Probe Optical Absorption of Two-Dimensional Materials 72
3C-SiC nanowires and layers grown on Si: attractive material for biosensor applications 70
Silicon Carbide Nanowires 70
Surface Functionalization of 3C-SiC Nanowires 69
Curvature and stress analysis in 3C-SiC layers grown on (001) and (111) Si substrates 69
Influence of the growth conditions on the properties of germanium epilayers grown by MOVPE on Si 69
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 68
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects 67
Nanomechanical studies of doped InGaP/GaAs epilayers 66
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 66
Sensors based on carbon nanotubes and germanium nanowires for explosive detection 66
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) 66
UnExploDe: Portable Sensors for Unmanned Explosive Detection 66
The effect of substrate type on SiC nanowire orientation 65
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations 65
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 65
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates 64
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications 63
CBr4 as precursor for VPE growth of cubic silicon carbide 63
Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD 63
Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors 63
Thermodynamic and Kinetic Effects on the Nucleation and Growth of epsilon/kappa- or beta-Ga2O3 by Metal-Organic Vapor Phase Epitaxy 63
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films) 62
TEM and SEM-CL studies of SiC Nanowires 62
Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers 61
In situ TEM study of K->gamma and K->delta phase transformations in Ga2O3 61
Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence 60
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors 60
Growth of SiC NWs by vapor phase technique using Fe as catalyst 60
Epitaxial germanium for photovoltaic or opto-electronic applications 60
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 60
Buffer layer optimization for the growth of state of the art 3C-SiC/Si 59
The electronic structure of epsilon-Ga2O3 58
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 58
Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition 58
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers 57
Tuning the radial structure of core-shell silicon carbide nanowires 57
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications 56
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors 55
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 55
Synthesis of germanium nanowires and carbon nanotubes tailored to explosive detection 55
Cubic SiC Nanowires: Growth, Characterization and Applications 55
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates 54
Germanium: Epitaxy and its applications 54
Cathodoluminescence of undoped and Si-doped ε-Ga2O3 films 53
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 53
Synthesis, characterization and chemical functionalization of germanium nanowires 53
Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures 52
Growth of germanium nanowires with isobuthyl germane 52
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications 52
Energy System based on Integration between a Thermo-Photo-Voltaic generator and an Organic Rankine Cycle 51
Functionalization of SiC nanowires by supersonic molecular beams for photodynamic therapy 51
Orientation of germanium nanowires on germanium and silicon substrates for nanodevices 50
Study of SnO/-Ga2O3p - N diodes in planar geometry 50
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation 50
3C-SiC nanowires functionalized with porphyrins by supersonic molecular beams for photodynamic therapy 50
Growth of 3C-SiC nanowires and layers on Si 50
Nanostrain Resolution Strain Sensing by Monocrystalline 3C-SiC on SOI Electrostatic MEMS Resonators 50
Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD 49
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor 48
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS 48
n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion 48
Crystal structure and ferroelectric properties of epsilon-Ga2O3 films grown on (0001)-sapphire 47
Logic with memory: and gates made of organic and inorganic memristive devices 47
Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates 47
Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films 47
Totale 6.749
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Categoria #
all - tutte 39.942
article - articoli 25.309
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.549
Totale 66.800
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202484 0 0 0 0 0 0 0 0 21 3 52 8
2024/20253.666 29 14 277 150 830 207 109 240 128 144 850 688
2025/20266.529 313 942 593 887 1.210 263 881 317 349 401 190 183
2026/20271.348 393 262 693 0 0 0 0 0 0 0 0 0
Totale 11.627