CNR Institutional Research Information System

LA VIA, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 7.671
NA - Nord America 3.476
EU - Europa 1.545
SA - Sud America 1.243
AF - Africa 99
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 1
Totale 14.048
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Nazione #
US - Stati Uniti d'America 3.310
SG - Singapore 3.214
CN - Cina 1.914
BR - Brasile 1.027
HK - Hong Kong 767
VN - Vietnam 706
IT - Italia 458
FR - Francia 434
KR - Corea 365
NL - Olanda 163
JP - Giappone 148
IN - India 121
BD - Bangladesh 109
FI - Finlandia 99
DE - Germania 98
GB - Regno Unito 86
AR - Argentina 83
CA - Canada 60
ID - Indonesia 50
IL - Israele 48
MX - Messico 45
CO - Colombia 33
EC - Ecuador 32
IQ - Iraq 32
TR - Turchia 28
ES - Italia 27
ZA - Sudafrica 26
RU - Federazione Russa 23
SA - Arabia Saudita 23
CL - Cile 22
UA - Ucraina 21
PL - Polonia 19
AT - Austria 17
PY - Paraguay 17
UZ - Uzbekistan 17
IE - Irlanda 16
PK - Pakistan 15
EG - Egitto 14
NP - Nepal 13
TW - Taiwan 13
AE - Emirati Arabi Uniti 12
MA - Marocco 12
PE - Perù 12
JM - Giamaica 11
SE - Svezia 11
AU - Australia 10
CR - Costa Rica 10
KE - Kenya 10
TT - Trinidad e Tobago 10
MY - Malesia 9
PH - Filippine 9
AL - Albania 8
HN - Honduras 8
JO - Giordania 8
AZ - Azerbaigian 7
PT - Portogallo 7
TN - Tunisia 7
UY - Uruguay 7
VE - Venezuela 7
CH - Svizzera 6
DZ - Algeria 6
EE - Estonia 6
GR - Grecia 6
LT - Lituania 6
PA - Panama 6
RO - Romania 6
KZ - Kazakistan 5
BE - Belgio 4
DK - Danimarca 4
ET - Etiopia 4
KW - Kuwait 4
TH - Thailandia 4
BO - Bolivia 3
CI - Costa d'Avorio 3
GE - Georgia 3
MD - Moldavia 3
NO - Norvegia 3
RS - Serbia 3
SV - El Salvador 3
BB - Barbados 2
BH - Bahrain 2
BS - Bahamas 2
BY - Bielorussia 2
CG - Congo 2
DJ - Gibuti 2
GA - Gabon 2
HR - Croazia 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LV - Lettonia 2
MM - Myanmar 2
NZ - Nuova Zelanda 2
OM - Oman 2
QA - Qatar 2
SY - Repubblica araba siriana 2
TJ - Tagikistan 2
TL - Timor Orientale 2
AG - Antigua e Barbuda 1
AM - Armenia 1
Totale 14.016
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Città #
Singapore 1.923
Hefei 899
Hong Kong 751
Santa Clara 712
San Jose 544
Ashburn 422
Seoul 357
Lauterbourg 355
Beijing 309
Ho Chi Minh City 253
Dallas 182
Los Angeles 154
Hanoi 151
São Paulo 85
Tokyo 84
Bologna 75
New York 72
Helsinki 55
Buffalo 54
Minamishinagawa 46
Rio de Janeiro 45
Cavallino 44
Da Nang 44
Frankfurt am Main 43
Milan 42
Bengaluru 33
Orem 33
Rome 32
Lappeenranta 30
Guangzhou 29
Catania 28
Council Bluffs 25
Haiphong 25
Belo Horizonte 21
Phoenix 20
Atlanta 19
Chennai 19
Biên Hòa 18
Mumbai 18
Thái Nguyên 18
Brasília 17
Amsterdam 16
London 16
Montreal 16
Recife 16
Shanghai 16
Tashkent 16
Brooklyn 15
Chicago 15
Guayaquil 15
Hải Dương 15
Manchester 15
Miami 15
Toronto 15
Warsaw 15
Baghdad 14
Denver 14
Dublin 14
Guarulhos 14
Porto Alegre 14
Boardman 13
Johannesburg 13
Seattle 13
Aci Castello 12
Campinas 12
Dhaka 12
Ninh Bình 12
Curitiba 11
Düsseldorf 11
Palermo 11
Vienna 11
Bogotá 10
Nuremberg 10
Quito 10
Ribeirão Preto 10
Salvador 10
Turku 10
Washington 10
Bari 9
Boston 9
Bắc Ninh 9
Cairo 9
Duque de Caxias 9
Jakarta 9
Philadelphia 9
Riyadh 9
San José 9
Stockholm 9
The Dalles 9
Asunción 8
Buenos Aires 8
Can Tho 8
Falkenstein 8
Hangzhou 8
Houston 8
Jeddah 8
Madrid 8
Manaus 8
Munich 8
Nairobi 8
Totale 8.760
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Nome #
New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds 143
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon 120
Emerging SiC Applications beyond Power Electronic Devices 109
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface 103
Silicon Carbide Epitaxy 101
TEM Investigation on High Dose Al implanted 4H-SiC Epitaxial Layer 98
Stress Fields Distribution and Simulation in 3C-SiC Resonators 95
Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors 84
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 80
The NUMEN Technical Design Report 79
Silicon or Silicon Carbide surface as novel cell culture device for neural stem cells 75
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 74
SiC Films and Coatings: Amorphous, Polycrystalline, and Single Crystal Forms 73
Codice Montecarlo per la simulazione della crescita del SiC (3C e 4H) 73
Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition 72
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon 72
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition 72
Dual metal SiC Schottky rectifiers with low power dissipation 72
Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection 72
Advanced approach of bulk (111) 3C-SiC epitaxial growth 72
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 71
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 71
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials 71
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults 70
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 70
X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films 69
Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams 69
Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes 68
Measuring Techniques for the Semiconductor’s Parameters 68
Automatic Image Analysis of Stackingfault 67
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 67
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 67
Boron diffusion in Co74Ti26 amorphous alloy 66
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers 66
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 64
Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator 64
Stress fields analysis in 3C-SiC free-standing microstructures by micro-Raman spectroscopy 63
3C-SiC grown on Si by using a Si1-xGex buffer layer 63
Post-growth process effect on hetero-epitxial 3C-SiC wafer bow and residual stress 62
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC 62
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Kinetics of the C49-C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations 61
Silicon Carbide devices for radiation detection: A review of the main performances 61
Assessing innovative bulk (111) 3C-SiC epitaxial growth 60
ARSENIC REDISTRIBUTION AND OUT-DIFFUSION IN TISI2-SI BILAYERED STRUCTURES 59
Low temperature reaction of point defects in ion irradiated 4H-SiC 59
Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates 59
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications 59
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation 59
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 59
Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures 59
Stress relaxation study in 3C-SiC microstructures by micro-raman analysis and finite element modeling 58
Fast growth rate epitaxy by chloride precursors 58
"Direct" measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy 58
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing 58
Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions 57
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 57
Effects of Al ion implantation on 3C-SiC crystal structure 57
Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon 57
Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates 56
Stacking faults defects on 3C-SiC homo-epitaxial films 56
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Partially depleted operation of 250 μm-thick silicon carbide neutron detectors 56
Laser crystallization of amorphous TiO2 on polymer 56
Ohmic contacts to SiC 55
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications 55
Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates 54
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 54
New Approaches and Understandings in the Growth of Cubic Silicon Carbide 54
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates 54
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors 54
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy 54
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators 54
Performance of a thick 250 mi m silicon carbide detector: stability and energy resolution 54
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 53
Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films 53
STRUCTURE AND DEFECT CHARACTERIZATION OF EPITAXIAL COSI2 ON SI(001) FORMED USING AN AMORPHOUS CO75W25 SPUTTERED LAYER 53
Structural properties of fluorinated SiO2 thin films 52
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay 52
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 52
Protrusions reduction in 3C-SiC thin film on Si 51
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier 50
Al redistribution into SiO2/Si system during oxidation of high dose Al-implanted silicon 49
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates 49
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 49
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 49
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC 49
Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters 48
Effect of nitrogen and aluminum doping on 3c-sic heteroepitaxial layers grown on 4◦ off-axis si (100) 48
4h-sic mosfet source and body laser annealing process 48
Processo di crescita etero-epitassiale di SiC mediante precursori innovativi 47
Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons 47
Study of the role of particle-particle dipole interaction in dielectrophoretic devices for biomarkers identification 47
Roughness of thermal oxide layers grown on ion implanted silicon wafers 47
Thermal oxidation of As and Ge implanted Si(100) 46
Photocatalytical activity of amorphous hydrogenated TiO2 obtained by pulsed laser ablation in liquid 46
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane 46
Structural and electronic transitions in Ge2Sb2Te5 induced by ion irradiation damage 45
Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures 45
STUDY OF THE ROLE OF PARTICLE-PARTICLE DIPOLE INTERACTION IN DIELECTROPHORETIC DEVICES FOR BIOMARKERS IDENTIFICATION 45
Totale 6.282
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Categoria #
all - tutte 48.740
article - articoli 40.635
book - libri 296
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.211
Totale 90.882
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 4 2 40 13
2024/20255.014 26 29 345 232 663 335 191 218 144 220 1.426 1.185
2025/20268.980 516 905 904 1.445 1.486 310 1.464 516 522 430 231 251
2026/2027263 263 0 0 0 0 0 0 0 0 0 0 0
Totale 14.316