CNR Institutional Research Information System

LA VIA, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 7.835
NA - Nord America 4.727
EU - Europa 1.719
SA - Sud America 1.348
Continente sconosciuto - Info sul continente non disponibili 272
AF - Africa 104
OC - Oceania 14
Totale 16.019
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Nazione #
US - Stati Uniti d'America 4.461
SG - Singapore 3.219
CN - Cina 1.927
BR - Brasile 1.059
HK - Hong Kong 770
VN - Vietnam 726
IT - Italia 575
FR - Francia 445
KR - Corea 370
NL - Olanda 165
JP - Giappone 157
BD - Bangladesh 144
IN - India 124
GB - Regno Unito 105
DE - Germania 103
FI - Finlandia 99
CA - Canada 96
AR - Argentina 84
ID - Indonesia 70
CO - Colombia 69
MX - Messico 55
IL - Israele 50
EC - Ecuador 47
IQ - Iraq 32
ES - Italia 31
TR - Turchia 30
SA - Arabia Saudita 28
CL - Cile 26
ZA - Sudafrica 26
RU - Federazione Russa 24
UA - Ucraina 24
VE - Venezuela 22
JM - Giamaica 20
MY - Malesia 20
PL - Polonia 19
TT - Trinidad e Tobago 19
HN - Honduras 18
IE - Irlanda 18
PH - Filippine 18
AT - Austria 17
PK - Pakistan 17
PY - Paraguay 17
UZ - Uzbekistan 17
CR - Costa Rica 16
EG - Egitto 14
NP - Nepal 14
PE - Perù 14
AE - Emirati Arabi Uniti 13
TH - Thailandia 13
TW - Taiwan 13
EE - Estonia 12
KE - Kenya 12
MA - Marocco 12
AU - Australia 11
SE - Svezia 11
GT - Guatemala 10
AL - Albania 8
JO - Giordania 8
AZ - Azerbaigian 7
CH - Svizzera 7
PT - Portogallo 7
TN - Tunisia 7
UY - Uruguay 7
DZ - Algeria 6
GR - Grecia 6
KZ - Kazakistan 6
LT - Lituania 6
PA - Panama 6
RO - Romania 6
SV - El Salvador 5
BE - Belgio 4
BH - Bahrain 4
BS - Bahamas 4
DK - Danimarca 4
ET - Etiopia 4
GE - Georgia 4
KW - Kuwait 4
BO - Bolivia 3
CI - Costa d'Avorio 3
LB - Libano 3
MD - Moldavia 3
NO - Norvegia 3
QA - Qatar 3
RS - Serbia 3
SC - Seychelles 3
AG - Antigua e Barbuda 2
AM - Armenia 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BN - Brunei Darussalam 2
BY - Bielorussia 2
CG - Congo 2
DJ - Gibuti 2
DO - Repubblica Dominicana 2
GA - Gabon 2
HR - Croazia 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LV - Lettonia 2
MM - Myanmar 2
Totale 15.702
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Città #
Singapore 1.927
Hefei 899
Hong Kong 751
Santa Clara 729
San Jose 664
Ashburn 536
Seoul 358
Lauterbourg 355
Beijing 310
Ho Chi Minh City 259
Dallas 185
Los Angeles 162
Hanoi 155
São Paulo 86
Tokyo 84
New York 81
Bologna 78
Buffalo 63
Helsinki 55
Milan 53
Rio de Janeiro 47
Minamishinagawa 46
Cavallino 44
Da Nang 44
Frankfurt am Main 44
Rome 44
Council Bluffs 40
Bengaluru 34
Orem 33
Philadelphia 32
Brooklyn 31
Guangzhou 31
Phoenix 31
Lappeenranta 30
Atlanta 29
Catania 28
Chicago 28
Haiphong 25
Montreal 23
Washington 23
Brasília 22
Belo Horizonte 21
Miami 20
Bogotá 19
Chennai 19
Houston 19
Biên Hòa 18
Denver 18
Guayaquil 18
Mumbai 18
Recife 18
Thái Nguyên 18
London 17
Naples 17
Quito 17
Shanghai 17
Toronto 17
Amsterdam 16
Dhaka 16
Dublin 16
Manchester 16
Tampa 16
Tashkent 16
Hải Dương 15
Seattle 15
Warsaw 15
Baghdad 14
Guarulhos 14
Porto Alegre 14
Boardman 13
Johannesburg 13
Palermo 13
Aci Castello 12
Campinas 12
Genoa 12
Jackson 12
Jacksonville 12
Kingston 12
Las Vegas 12
Medellín 12
Ninh Bình 12
Queens 12
Turin 12
Bari 11
Cleveland 11
Curitiba 11
Düsseldorf 11
Jeddah 11
Salvador 11
San José 11
The Bronx 11
Vienna 11
Boston 10
Cairo 10
Detroit 10
Jakarta 10
Nuremberg 10
Paris 10
Ribeirão Preto 10
Turku 10
Totale 9.323
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Nome #
New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds 153
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon 124
Silicon Carbide Epitaxy 120
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface 120
Emerging SiC Applications beyond Power Electronic Devices 115
TEM Investigation on High Dose Al implanted 4H-SiC Epitaxial Layer 102
Stress Fields Distribution and Simulation in 3C-SiC Resonators 100
Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors 88
The NUMEN Technical Design Report 86
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 83
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers 82
SiC Films and Coatings: Amorphous, Polycrystalline, and Single Crystal Forms 81
Silicon or Silicon Carbide surface as novel cell culture device for neural stem cells 80
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 79
Dual metal SiC Schottky rectifiers with low power dissipation 79
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 78
Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition 78
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon 78
Advanced approach of bulk (111) 3C-SiC epitaxial growth 78
X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films 77
Codice Montecarlo per la simulazione della crescita del SiC (3C e 4H) 76
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition 76
Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection 75
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials 75
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 74
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults 74
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 73
Silicon Carbide devices for radiation detection: A review of the main performances 73
Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams 72
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 72
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 72
Boron diffusion in Co74Ti26 amorphous alloy 71
Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes 71
Measuring Techniques for the Semiconductor’s Parameters 71
Automatic Image Analysis of Stackingfault 69
Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator 69
3C-SiC grown on Si by using a Si1-xGex buffer layer 68
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 68
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 67
Stress fields analysis in 3C-SiC free-standing microstructures by micro-Raman spectroscopy 65
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC 65
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation 65
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing 65
Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions 64
Kinetics of the C49-C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations 64
Assessing innovative bulk (111) 3C-SiC epitaxial growth 64
Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures 64
Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates 63
Post-growth process effect on hetero-epitxial 3C-SiC wafer bow and residual stress 63
Low temperature reaction of point defects in ion irradiated 4H-SiC 63
"Direct" measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy 63
ARSENIC REDISTRIBUTION AND OUT-DIFFUSION IN TISI2-SI BILAYERED STRUCTURES 62
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications 62
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications 62
Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon 62
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 62
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators 62
Laser crystallization of amorphous TiO2 on polymer 62
Stress relaxation study in 3C-SiC microstructures by micro-raman analysis and finite element modeling 61
Fast growth rate epitaxy by chloride precursors 61
Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates 61
Partially depleted operation of 250 μm-thick silicon carbide neutron detectors 61
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 60
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 59
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 59
Effects of Al ion implantation on 3C-SiC crystal structure 59
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates 59
Performance of a thick 250 mi m silicon carbide detector: stability and energy resolution 59
Stacking faults defects on 3C-SiC homo-epitaxial films 58
Ohmic contacts to SiC 58
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy 58
STRUCTURE AND DEFECT CHARACTERIZATION OF EPITAXIAL COSI2 ON SI(001) FORMED USING AN AMORPHOUS CO75W25 SPUTTERED LAYER 57
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 57
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 57
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 56
Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films 56
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay 56
New Approaches and Understandings in the Growth of Cubic Silicon Carbide 56
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors 56
Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates 55
Structural properties of fluorinated SiO2 thin films 55
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC 55
Protrusions reduction in 3C-SiC thin film on Si 54
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers 54
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 54
4h-sic mosfet source and body laser annealing process 54
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier 53
Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons 53
Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters 53
Al redistribution into SiO2/Si system during oxidation of high dose Al-implanted silicon 52
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates 52
Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures 52
Neural Stem Cells Biocompatibility on Silicon and Silicon Carbide surface: a new approach on neurodegenerative disease 52
Processo di crescita etero-epitassiale di SiC mediante precursori innovativi 51
Study of the role of particle-particle dipole interaction in dielectrophoretic devices for biomarkers identification 51
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 51
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane 51
Effect of nitrogen and aluminum doping on 3c-sic heteroepitaxial layers grown on 4◦ off-axis si (100) 50
Roughness of thermal oxide layers grown on ion implanted silicon wafers 50
Thermal oxidation of As and Ge implanted Si(100) 49
Totale 6.774
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Categoria #
all - tutte 56.046
article - articoli 46.843
book - libri 351
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.386
Totale 104.626
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 4 2 40 13
2024/20255.014 26 29 345 232 663 335 191 218 144 220 1.426 1.185
2025/20268.980 516 905 904 1.445 1.486 310 1.464 516 522 430 231 251
2026/20271.966 463 426 1.077 0 0 0 0 0 0 0 0 0
Totale 16.019