CNR Institutional Research Information System

LA VIA, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 42
EU - Europa 15
NA - Nord America 1
Totale 58
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Nazione #
CN - Cina 22
KR - Corea 14
IT - Italia 13
SG - Singapore 6
SE - Svezia 2
US - Stati Uniti d'America 1
Totale 58
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Città #
Seoul 14
Guangzhou 11
Milan 7
Singapore 3
Bari 2
Naples 2
Turin 2
Forest City 1
Totale 42
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Nome #
Roughness of thermal oxide layers grown on ion implanted silicon wafers 7
Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications 3
Bow in 6 inch high-quality off-axis (111) 3C-SiC films 3
Effects of Al ion implantation on 3C-SiC crystal structure 2
Cobalt silicide thermal stability: From blanket thin film to submicrometer lines 2
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers 2
Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application 2
STUDY OF THE ROLE OF PARTICLE-PARTICLE DIPOLE INTERACTION IN DIELECTROPHORETIC DEVICES FOR BIOMARKERS IDENTIFICATION 2
heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrate 2
Electrical characterization of nickel silicide contacts on silicon carbide 2
3C-SiC growth on (001) Si substrates by using a multilayer buffer 2
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon 1
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition 1
Complete determination of the local stress field in epitaxial thin films using single microstructure 1
Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates 1
Ohmic contacts to SiC 1
Silicon Carbide Epitaxy 1
FORMATION AND CHARACTERIZATION OF SI/COSI2,/SI EPITAXIAL HETEROSTRUCTURES 1
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes 1
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures 1
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application 1
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates 1
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates 1
Electrical properties of defects in 4H-SiC investigated by photo-induced-currents measurements 1
3C-SiC film growth on Si substrates 1
Kinetics of the C49-C54 transformation by micro-Raman imaging 1
Advanced Silicon Carbide Devices and Processing 1
Crystal recovery from Al-implantation induced damaging in 3C-SiC films 1
Carbonization and transition layer effects on 3C-SiC film residual stress 1
Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements 1
3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor 1
Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface 1
Correlation between macroscopic and microscopic stress fields: Application to the 3C-SiC/Si heteroepitaxy 1
Carbonization Study of Different Silicon Orientations 1
Secondary defect annihilation in ion beam processed SixGe 1-x layers using titanium silicide 1
Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis 1
3C-SiC hetero-epitaxial films for sensor fabrication 1
Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus 1
Laser crystallization of amorphous TiO2 on polymer 1
Defect evolution in ion irradiated 6H-SiC epitaxial layers 1
Totale 58
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Categoria #
all - tutte 2.889
article - articoli 2.486
book - libri 20
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 37
Totale 5.432
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202450 0 0 0 0 0 0 0 0 4 2 34 10
2024/20258 8 0 0 0 0 0 0 0 0 0 0 0
Totale 58