CNR Institutional Research Information System

LA VIA, FRANCESCO
 Distribuzione geografica
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Continente #
AS - Asia 7.599
NA - Nord America 3.068
EU - Europa 1.476
SA - Sud America 1.233
AF - Africa 98
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 1
Totale 13.488
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Nazione #
SG - Singapore 3.210
US - Stati Uniti d'America 2.922
CN - Cina 1.906
BR - Brasile 1.023
HK - Hong Kong 767
VN - Vietnam 706
FR - Francia 432
IT - Italia 395
KR - Corea 365
NL - Olanda 162
JP - Giappone 148
IN - India 121
FI - Finlandia 99
DE - Germania 98
GB - Regno Unito 84
AR - Argentina 81
BD - Bangladesh 52
ID - Indonesia 50
CA - Canada 49
IL - Israele 48
MX - Messico 45
CO - Colombia 32
IQ - Iraq 32
EC - Ecuador 30
TR - Turchia 28
ES - Italia 27
ZA - Sudafrica 26
RU - Federazione Russa 23
SA - Arabia Saudita 23
CL - Cile 22
UA - Ucraina 21
PL - Polonia 19
AT - Austria 17
UZ - Uzbekistan 17
IE - Irlanda 16
PY - Paraguay 16
EG - Egitto 14
PK - Pakistan 14
NP - Nepal 13
TW - Taiwan 13
AE - Emirati Arabi Uniti 12
MA - Marocco 12
PE - Perù 12
SE - Svezia 11
AU - Australia 10
KE - Kenya 10
CR - Costa Rica 9
JM - Giamaica 9
PH - Filippine 9
AL - Albania 8
HN - Honduras 8
JO - Giordania 8
AZ - Azerbaigian 7
MY - Malesia 7
TT - Trinidad e Tobago 7
UY - Uruguay 7
VE - Venezuela 7
CH - Svizzera 6
DZ - Algeria 6
EE - Estonia 6
GR - Grecia 6
LT - Lituania 6
PA - Panama 6
PT - Portogallo 6
RO - Romania 6
TN - Tunisia 6
KZ - Kazakistan 5
BE - Belgio 4
DK - Danimarca 4
ET - Etiopia 4
KW - Kuwait 4
TH - Thailandia 4
BO - Bolivia 3
CI - Costa d'Avorio 3
GE - Georgia 3
MD - Moldavia 3
NO - Norvegia 3
RS - Serbia 3
BB - Barbados 2
BH - Bahrain 2
BY - Bielorussia 2
CG - Congo 2
DJ - Gibuti 2
GA - Gabon 2
HR - Croazia 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LV - Lettonia 2
MM - Myanmar 2
NZ - Nuova Zelanda 2
OM - Oman 2
QA - Qatar 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
TJ - Tagikistan 2
TL - Timor Orientale 2
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
Totale 13.457
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Città #
Singapore 1.921
Hefei 899
Hong Kong 751
Santa Clara 704
San Jose 533
Seoul 357
Lauterbourg 355
Ashburn 316
Beijing 309
Ho Chi Minh City 253
Dallas 177
Los Angeles 152
Hanoi 151
São Paulo 85
Tokyo 84
Bologna 73
New York 62
Helsinki 55
Minamishinagawa 46
Buffalo 45
Rio de Janeiro 45
Cavallino 44
Da Nang 44
Frankfurt am Main 43
Bengaluru 33
Orem 33
Milan 31
Lappeenranta 30
Catania 28
Guangzhou 28
Haiphong 25
Council Bluffs 24
Rome 24
Belo Horizonte 20
Chennai 19
Phoenix 19
Biên Hòa 18
Mumbai 18
Thái Nguyên 18
Brasília 17
Amsterdam 16
Atlanta 16
Montreal 16
Recife 16
Tashkent 16
Hải Dương 15
Manchester 15
Warsaw 15
Baghdad 14
Brooklyn 14
Chicago 14
Dublin 14
Guarulhos 14
Guayaquil 14
Miami 14
Porto Alegre 14
Toronto 14
Johannesburg 13
London 13
Aci Castello 12
Campinas 12
Dhaka 12
Ninh Bình 12
Seattle 12
Shanghai 12
Curitiba 11
Düsseldorf 11
Vienna 11
Bogotá 10
Denver 10
Nuremberg 10
Palermo 10
Ribeirão Preto 10
Salvador 10
Turku 10
Bắc Ninh 9
Cairo 9
Duque de Caxias 9
Jakarta 9
Quito 9
Riyadh 9
Stockholm 9
The Dalles 9
Washington 9
Asunción 8
Buenos Aires 8
Can Tho 8
Falkenstein 8
Hangzhou 8
Jeddah 8
Madrid 8
Manaus 8
Munich 8
Nairobi 8
Paris 8
Philadelphia 8
Quận Bình Thạnh 8
San José 8
Shenzhen 8
Amman 7
Totale 8.549
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Nome #
New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds 142
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon 120
Emerging SiC Applications beyond Power Electronic Devices 106
TEM Investigation on High Dose Al implanted 4H-SiC Epitaxial Layer 97
Stress Fields Distribution and Simulation in 3C-SiC Resonators 94
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface 93
Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors 80
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults 78
The NUMEN Technical Design Report 78
SiC Films and Coatings: Amorphous, Polycrystalline, and Single Crystal Forms 72
Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? 72
Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition 72
Codice Montecarlo per la simulazione della crescita del SiC (3C e 4H) 71
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison 71
Silicon Carbide Epitaxy 71
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy 70
Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition 70
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon 70
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults 70
Advanced approach of bulk (111) 3C-SiC epitaxial growth 70
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials 69
X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films 67
Dual metal SiC Schottky rectifiers with low power dissipation 67
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 67
Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes 66
Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams 66
Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection 66
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 66
Measuring Techniques for the Semiconductor’s Parameters 66
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers 66
Silicon or Silicon Carbide surface as novel cell culture device for neural stem cells 65
Automatic Image Analysis of Stackingfault 64
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 64
Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator 64
Boron diffusion in Co74Ti26 amorphous alloy 63
Stress fields analysis in 3C-SiC free-standing microstructures by micro-Raman spectroscopy 63
3C-SiC grown on Si by using a Si1-xGex buffer layer 63
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000 63
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 62
Post-growth process effect on hetero-epitxial 3C-SiC wafer bow and residual stress 61
Kinetics of the C49-C54 phase transition in TiSi2: New indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations 61
Silicon Carbide devices for radiation detection: A review of the main performances 61
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC 60
Low temperature reaction of point defects in ion irradiated 4H-SiC 59
Assessing innovative bulk (111) 3C-SiC epitaxial growth 59
ARSENIC REDISTRIBUTION AND OUT-DIFFUSION IN TISI2-SI BILAYERED STRUCTURES 58
Fast growth rate epitaxy by chloride precursors 58
Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates 58
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation 58
Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures 58
Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study 57
"Direct" measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy 57
Measurement of residual stress and young’s modulus on micromachined monocrystalline 3c‐sic layers grown on <111> and <100> silicon 57
Stacking faults defects on 3C-SiC homo-epitaxial films 56
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy 56
Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates 55
Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions 55
Stress relaxation study in 3C-SiC microstructures by micro-raman analysis and finite element modeling 55
Effects of Al ion implantation on 3C-SiC crystal structure 55
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications 55
Partially depleted operation of 250 μm-thick silicon carbide neutron detectors 55
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing 55
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) 55
Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates 54
Ohmic contacts to SiC 54
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications 54
New Approaches and Understandings in the Growth of Cubic Silicon Carbide 54
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization 53
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0 0 1) for high-power MOSFET applications 53
Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films 53
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates 53
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy 53
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators 53
Laser crystallization of amorphous TiO2 on polymer 53
Structural properties of fluorinated SiO2 thin films 52
STRUCTURE AND DEFECT CHARACTERIZATION OF EPITAXIAL COSI2 ON SI(001) FORMED USING AN AMORPHOUS CO75W25 SPUTTERED LAYER 52
Performance of a thick 250 mi m silicon carbide detector: stability and energy resolution 52
Protrusions reduction in 3C-SiC thin film on Si 51
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 51
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors 51
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier 49
Al redistribution into SiO2/Si system during oxidation of high dose Al-implanted silicon 49
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates 48
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries 48
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 48
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay 47
Processo di crescita etero-epitassiale di SiC mediante precursori innovativi 47
Effect of nitrogen and aluminum doping on 3c-sic heteroepitaxial layers grown on 4◦ off-axis si (100) 47
4h-sic mosfet source and body laser annealing process 47
Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons 46
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC 46
Study of the role of particle-particle dipole interaction in dielectrophoretic devices for biomarkers identification 45
Photocatalytical activity of amorphous hydrogenated TiO2 obtained by pulsed laser ablation in liquid 45
Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane 45
Roughness of thermal oxide layers grown on ion implanted silicon wafers 45
Complete determination of the local stress field in epitaxial thin films using single microstructure 44
Thermal oxidation of As and Ge implanted Si(100) 43
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers 43
Numerical Simulations of 3C-SiC High-Sensitivity Strain Meters 43
Micro-Raman analysis and finite-element modeling of 3 C-SiC microstructures 43
Totale 6.092
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Categoria #
all - tutte 44.049
article - articoli 36.686
book - libri 236
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.116
Totale 82.087
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202459 0 0 0 0 0 0 0 0 4 2 40 13
2024/20255.014 26 29 345 232 663 335 191 218 144 220 1.426 1.185
2025/20268.683 516 905 904 1.445 1.486 310 1.464 516 522 430 185 0
Totale 13.756