CNR Institutional Research Information System

NIPOTI, ROBERTA
 Distribuzione geografica
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Continente #
AS - Asia 5.304
NA - Nord America 3.965
EU - Europa 1.792
SA - Sud America 932
AF - Africa 85
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 3
Totale 12.087
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Nazione #
US - Stati Uniti d'America 3.831
SG - Singapore 2.259
CN - Cina 1.339
BR - Brasile 764
RU - Federazione Russa 670
VN - Vietnam 561
HK - Hong Kong 466
FR - Francia 309
IT - Italia 266
KR - Corea 233
DE - Germania 156
NL - Olanda 98
IN - India 92
JP - Giappone 75
GB - Regno Unito 72
CA - Canada 63
AR - Argentina 59
BD - Bangladesh 57
FI - Finlandia 55
ID - Indonesia 36
EC - Ecuador 32
MX - Messico 29
ES - Italia 27
IL - Israele 27
ZA - Sudafrica 25
IQ - Iraq 24
PL - Polonia 23
CO - Colombia 20
TR - Turchia 20
SE - Svezia 19
UZ - Uzbekistan 17
VE - Venezuela 16
UA - Ucraina 15
PY - Paraguay 14
MA - Marocco 12
SA - Arabia Saudita 12
KE - Kenya 11
AE - Emirati Arabi Uniti 10
CL - Cile 10
TW - Taiwan 10
CZ - Repubblica Ceca 9
PK - Pakistan 9
CR - Costa Rica 8
IE - Irlanda 8
NP - Nepal 8
AL - Albania 7
BO - Bolivia 7
DO - Repubblica Dominicana 7
PH - Filippine 7
AT - Austria 6
JM - Giamaica 6
PT - Portogallo 6
TN - Tunisia 6
TT - Trinidad e Tobago 6
UY - Uruguay 6
AZ - Azerbaigian 5
DK - Danimarca 5
DZ - Algeria 5
EG - Egitto 5
JO - Giordania 5
LT - Lituania 5
BE - Belgio 4
ET - Etiopia 4
HN - Honduras 4
PE - Perù 4
AU - Australia 3
CH - Svizzera 3
CI - Costa d'Avorio 3
EE - Estonia 3
GT - Guatemala 3
KG - Kirghizistan 3
KW - Kuwait 3
KZ - Kazakistan 3
MY - Malesia 3
PA - Panama 3
RO - Romania 3
RS - Serbia 3
TJ - Tagikistan 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BG - Bulgaria 2
BH - Bahrain 2
BY - Bielorussia 2
HR - Croazia 2
HU - Ungheria 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LV - Lettonia 2
MD - Moldavia 2
NG - Nigeria 2
NI - Nicaragua 2
NO - Norvegia 2
OM - Oman 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BJ - Benin 1
BW - Botswana 1
CG - Congo 1
Totale 12.065
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Città #
Singapore 1.371
Dallas 1.289
Santa Clara 829
Hefei 561
Hong Kong 463
San Jose 326
Ashburn 290
Lauterbourg 245
Beijing 227
Seoul 224
Ho Chi Minh City 191
Hanoi 136
Frankfurt am Main 100
Los Angeles 98
Bologna 81
São Paulo 66
Buffalo 43
Orem 43
New York 41
Tokyo 39
Da Nang 32
Helsinki 32
Milan 26
Minamishinagawa 26
Rio de Janeiro 24
Haiphong 23
Belo Horizonte 20
Brooklyn 20
Amsterdam 19
Warsaw 19
Chennai 18
Phoenix 17
Guangzhou 16
Montreal 16
Bengaluru 15
Houston 15
Denver 14
London 13
Manchester 13
Stockholm 13
Atlanta 12
Johannesburg 12
Modena 12
Mumbai 12
Turku 12
Biên Hòa 11
Curitiba 11
Nairobi 11
Campinas 10
Caxias do Sul 10
Düsseldorf 10
Porto Alegre 10
Tashkent 10
Toronto 10
Dhaka 9
Hải Dương 9
Lappeenranta 9
Mexico City 9
Munich 9
Ribeirão Preto 9
Boardman 8
Buenos Aires 8
Falkenstein 8
Fortaleza 8
Guayaquil 8
Naples 8
Nuremberg 8
Piscataway 8
Queens 8
Quito 8
San Francisco 8
San José 8
Thái Bình 8
West Jordan 8
Asunción 7
Bắc Giang 7
Elk Grove Village 7
Istanbul 7
Juiz de Fora 7
Poplar 7
Rome 7
The Bronx 7
Trieste 7
Baghdad 6
Brasília 6
Casablanca 6
Chicago 6
Florence 6
Guarulhos 6
Memphis 6
Montevideo 6
Parma 6
Philadelphia 6
Salvador 6
Trento 6
Vienna 6
Washington 6
Amman 5
Ankara 5
Bắc Ninh 5
Totale 7.535
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Nome #
< 0001 > channeling stopping power of MeV He+ ions in 4H-and 6H-SiC 2.125
Machine Learning Techniques for Pile-Up Rejection in Cryogenic Calorimeters 115
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC. 102
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 94
4H-SiC surface morphology after Al ion implantation and annealing with C-cap 86
Novel technique for the study of pile-up events in cryogenic bolometers 85
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 84
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 84
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 82
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 °C 80
Native Silicon Oxide Properties Determined by Doping 78
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 76
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC 75
Characterization of MOS capacitors fabricated on n-type 4H-SiC 75
Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour 75
1300°c annealing of 1×1020 al+ ion implanted 3C-SiC 74
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap 74
J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C 74
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 71
A CUPID Li2 100MoO4 scintillating bolometer tested in the CROSS underground facility 69
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 68
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 67
Steady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET 66
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 65
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 64
3 × 1018 - 1 × 1019 cm-3 al+ ion implanted 4h-sic: Annealing time effect 64
Boron Doping of Silicon Using Excimer Lasers 63
Investigating Mesa Structure Impact on C-V Measurements 62
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 61
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes 60
High Dose Al+ Implanted and Microwave Annealed 4H-SiC 58
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 56
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 55
Ion implanted phosphorous for 4H-SiC VDMOSFETs source regions: Effect of the post implantation annealing time 55
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 54
Estimation of Activation and Compensation Ratios in Al+ ion Implanted 4H-SiC: Comparison of Two Methodologies 54
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures 53
A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data 51
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 49
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC 49
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 49
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 49
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 48
Forward current of Al+ implanted 4H-SiC diodes: A study on the periphery and area components 48
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology 48
Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC 48
1300°C annealing of 1 × 10^20 cm^-3 Al+ ion implanted 3C-SiC/Si 48
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 47
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 47
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 47
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 46
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 46
Oxygen Influence on Titanium Silicide Formation 45
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 45
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 45
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 44
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 44
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 43
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 43
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 43
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 43
The role of defects on forward current in 4H-SiC p-i-n diodes 43
A highly effective edge termination design for SiC planar high power devices 43
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 43
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 43
Improving doping efficiency of P(+) implanted ions in 4H-SiC 42
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 41
Simulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers 41
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 41
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 41
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 41
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 41
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 41
High Dose Al + Implanted and Microwave Annealed 4H-SiC 40
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 40
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 40
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC 40
X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC 40
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 39
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 39
Simulation and exerimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes 39
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 39
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 39
Al + implanted vertical 4H-SiC p-i-n diodes: Experimental and simulated forward current-voltage characteristics 39
Point defects investigation of high energy proton irradiated SiC p+-i-n diodes 38
TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM 38
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation 38
Low temperature oxidation of SiC preamorphized by ion implantation 37
Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation 37
He+ ion dmage in 4H-SiC stidied by charge colletion efficiency measurements 37
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 37
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 37
1950 °C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time 37
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing 37
Thermal stability of 1x10(20) cm(-3) Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 degrees C 37
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4 ?cm2 specific resistance on 0.1-1 ?cm p-type 4H-SiC 36
Al+ ion implanted 4H-SiC vertical p+-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes 36
Totale 7.368
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Categoria #
all - tutte 39.911
article - articoli 19.054
book - libri 124
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 259
Totale 59.348
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 3 9 28 34
2024/20253.694 12 15 319 183 716 136 39 241 74 120 992 847
2025/20268.103 327 1.008 1.385 1.050 1.161 268 957 367 1.025 306 133 116
2026/2027256 256 0 0 0 0 0 0 0 0 0 0 0
Totale 12.127