CNR Institutional Research Information System

NIPOTI, ROBERTA
 Distribuzione geografica
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Continente #
AS - Asia 46
EU - Europa 35
NA - Nord America 11
Totale 92
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Nazione #
IT - Italia 26
SG - Singapore 20
CN - Cina 18
US - Stati Uniti d'America 11
KR - Corea 6
FR - Francia 3
NL - Olanda 2
TW - Taiwan 2
FI - Finlandia 1
GB - Regno Unito 1
IE - Irlanda 1
SE - Svezia 1
Totale 92
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Città #
Bologna 13
Guangzhou 10
Singapore 10
West Jordan 8
Seoul 6
Parma 5
Marseille 3
Reggio Emilia 3
Amsterdam 2
Naples 2
Taoyuan District 2
Ashburn 1
Boardman 1
Dublin 1
Fisciano 1
Forest City 1
Helsinki 1
London 1
Totale 71
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Nome #
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 13
< 0001 > channeling stopping power of MeV He+ ions in 4H-and 6H-SiC 10
Investigating Mesa Structure Impact on C-V Measurements 9
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes 8
DEPTH PROFILES AND DAMAGE ANNEALING OF 1.06-MEV AS-2+ IMPLANTED IN SILICON 3
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 3
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 3
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 2
INSITU GROWTH OF Y-BA-CU-O FILMS BY LASER DEPOSITION 2
Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data 2
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 2
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 2
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 2
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 2
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 2
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology 2
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 2
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC 1
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 1
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 1
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 1
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 1
Preparation of Ni2Si contacts: effect on SiC diode operation 1
Estimation of Activation and Compensation Ratios in Al+ ion Implanted 4H-SiC: Comparison of Two Methodologies 1
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 1
Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon 1
Carbon-cap for ohmic contacts on n-type ion implanted 4H-SiC 1
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 1
Rutherford backscattering studies of ion implanted semiconductors 1
Silicon Carbide Particle Detectors: Analysis and Simulation 1
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON 1
MULTI-SCANNING ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON 1
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 1
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 1
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 1
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 1
Native Silicon Oxide Properties Determined by Doping 1
Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC 1
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 1
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 1
4H-and 6H-SiC Rutherford back scattering-channeling spectrometry: polytype finger printing 1
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 1
Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 °C in N2 or wet O-2 ambient 1
SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature 1
J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C 1
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 1
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 1
Al + implanted vertical 4H-SiC p-i-n diodes: Experimental and simulated forward current-voltage characteristics 1
Totale 101
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Categoria #
all - tutte 3.751
article - articoli 1.833
book - libri 15
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 24
Totale 5.623
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 3 9 28 34
2024/202527 12 15 0 0 0 0 0 0 0 0 0 0
Totale 101