CNR Institutional Research Information System

NIPOTI, ROBERTA
 Distribuzione geografica
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Continente #
AS - Asia 5.268
NA - Nord America 3.667
EU - Europa 1.750
SA - Sud America 928
AF - Africa 85
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 2
Totale 11.706
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Nazione #
US - Stati Uniti d'America 3.557
SG - Singapore 2.258
CN - Cina 1.333
BR - Brasile 763
RU - Federazione Russa 670
VN - Vietnam 559
HK - Hong Kong 466
FR - Francia 309
KR - Corea 232
IT - Italia 227
DE - Germania 156
NL - Olanda 98
IN - India 92
GB - Regno Unito 72
JP - Giappone 69
AR - Argentina 57
FI - Finlandia 53
CA - Canada 51
BD - Bangladesh 42
ID - Indonesia 35
EC - Ecuador 31
MX - Messico 28
ES - Italia 27
IL - Israele 27
ZA - Sudafrica 25
IQ - Iraq 24
PL - Polonia 23
CO - Colombia 20
TR - Turchia 20
SE - Svezia 19
UZ - Uzbekistan 17
VE - Venezuela 16
UA - Ucraina 15
PY - Paraguay 14
MA - Marocco 12
SA - Arabia Saudita 12
KE - Kenya 11
AE - Emirati Arabi Uniti 10
CL - Cile 10
CZ - Repubblica Ceca 9
PK - Pakistan 9
TW - Taiwan 9
IE - Irlanda 8
AL - Albania 7
BO - Bolivia 7
DO - Repubblica Dominicana 7
NP - Nepal 7
PH - Filippine 7
AT - Austria 6
TN - Tunisia 6
UY - Uruguay 6
AZ - Azerbaigian 5
DK - Danimarca 5
DZ - Algeria 5
EG - Egitto 5
JO - Giordania 5
LT - Lituania 5
PT - Portogallo 5
TT - Trinidad e Tobago 5
BE - Belgio 4
CR - Costa Rica 4
ET - Etiopia 4
JM - Giamaica 4
PE - Perù 4
AU - Australia 3
CH - Svizzera 3
CI - Costa d'Avorio 3
EE - Estonia 3
GT - Guatemala 3
KG - Kirghizistan 3
KW - Kuwait 3
KZ - Kazakistan 3
PA - Panama 3
RO - Romania 3
RS - Serbia 3
TJ - Tagikistan 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BG - Bulgaria 2
BH - Bahrain 2
BY - Bielorussia 2
HR - Croazia 2
HU - Ungheria 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LV - Lettonia 2
MD - Moldavia 2
NG - Nigeria 2
NO - Norvegia 2
OM - Oman 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BJ - Benin 1
BW - Botswana 1
CG - Congo 1
CM - Camerun 1
DJ - Gibuti 1
FJ - Figi 1
Totale 11.685
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Città #
Singapore 1.371
Dallas 1.287
Santa Clara 823
Hefei 561
Hong Kong 463
San Jose 319
Lauterbourg 245
Ashburn 232
Beijing 225
Seoul 224
Ho Chi Minh City 191
Hanoi 134
Frankfurt am Main 100
Los Angeles 95
Bologna 81
São Paulo 66
Orem 43
Buffalo 42
New York 40
Tokyo 37
Da Nang 32
Helsinki 32
Minamishinagawa 26
Rio de Janeiro 24
Haiphong 23
Belo Horizonte 20
Milan 20
Amsterdam 19
Warsaw 19
Brooklyn 18
Chennai 18
Guangzhou 16
Bengaluru 15
Montreal 14
Denver 13
Houston 13
London 13
Manchester 13
Stockholm 13
Johannesburg 12
Mumbai 12
Turku 12
Biên Hòa 11
Curitiba 11
Modena 11
Nairobi 11
Phoenix 11
Campinas 10
Caxias do Sul 10
Düsseldorf 10
Porto Alegre 10
Tashkent 10
Atlanta 9
Dhaka 9
Hải Dương 9
Lappeenranta 9
Munich 9
Ribeirão Preto 9
Toronto 9
Buenos Aires 8
Falkenstein 8
Fortaleza 8
Guayaquil 8
Mexico City 8
Nuremberg 8
Quito 8
Thái Bình 8
West Jordan 8
Asunción 7
Bắc Giang 7
Elk Grove Village 7
Istanbul 7
Juiz de Fora 7
Poplar 7
San Francisco 7
Trieste 7
Baghdad 6
Brasília 6
Casablanca 6
Guarulhos 6
Montevideo 6
Parma 6
Salvador 6
Trento 6
Vienna 6
Amman 5
Ankara 5
Boardman 5
Bắc Ninh 5
Caracas 5
Charlotte 5
Chicago 5
Council Bluffs 5
Dublin 5
Duque de Caxias 5
Goiânia 5
Ha Long 5
Hortolândia 5
Jakarta 5
Kathmandu 5
Totale 7.401
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Nome #
< 0001 > channeling stopping power of MeV He+ ions in 4H-and 6H-SiC 2.121
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC. 101
Machine Learning Techniques for Pile-Up Rejection in Cryogenic Calorimeters 96
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 94
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 83
4H-SiC surface morphology after Al ion implantation and annealing with C-cap 82
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 81
Novel technique for the study of pile-up events in cryogenic bolometers 81
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 79
Native Silicon Oxide Properties Determined by Doping 77
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 °C 76
Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour 75
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC 74
1300°c annealing of 1×1020 al+ ion implanted 3C-SiC 74
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 74
Characterization of MOS capacitors fabricated on n-type 4H-SiC 73
J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C 73
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 70
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap 70
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 67
Steady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET 66
A CUPID Li2 100MoO4 scintillating bolometer tested in the CROSS underground facility 66
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 66
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 65
Boron Doping of Silicon Using Excimer Lasers 63
Investigating Mesa Structure Impact on C-V Measurements 62
3 × 1018 - 1 × 1019 cm-3 al+ ion implanted 4h-sic: Annealing time effect 62
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 60
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes 59
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 59
High Dose Al+ Implanted and Microwave Annealed 4H-SiC 58
Estimation of Activation and Compensation Ratios in Al+ ion Implanted 4H-SiC: Comparison of Two Methodologies 54
Ion implanted phosphorous for 4H-SiC VDMOSFETs source regions: Effect of the post implantation annealing time 54
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 53
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 52
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 52
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures 50
A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data 49
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 48
1300°C annealing of 1 × 10^20 cm^-3 Al+ ion implanted 3C-SiC/Si 48
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC 47
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology 47
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 46
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 46
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 46
Forward current of Al+ implanted 4H-SiC diodes: A study on the periphery and area components 46
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 45
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 45
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 45
Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC 45
Oxygen Influence on Titanium Silicide Formation 44
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 44
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 44
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 43
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 42
The role of defects on forward current in 4H-SiC p-i-n diodes 42
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 42
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 42
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 41
Simulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers 41
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 41
A highly effective edge termination design for SiC planar high power devices 41
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 41
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 41
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 41
High Dose Al + Implanted and Microwave Annealed 4H-SiC 40
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 40
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 40
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC 40
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 39
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 39
Improving doping efficiency of P(+) implanted ions in 4H-SiC 39
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 39
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 39
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 39
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 39
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 39
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 39
X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC 39
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 38
Simulation and exerimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes 38
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 38
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 38
Al + implanted vertical 4H-SiC p-i-n diodes: Experimental and simulated forward current-voltage characteristics 38
Low temperature oxidation of SiC preamorphized by ion implantation 37
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 37
Point defects investigation of high energy proton irradiated SiC p+-i-n diodes 37
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 37
1950 °C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time 37
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 37
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing 37
Thermal stability of 1x10(20) cm(-3) Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 degrees C 37
Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation 36
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4 ?cm2 specific resistance on 0.1-1 ?cm p-type 4H-SiC 36
Al+ ion implanted 4H-SiC vertical p+-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes 36
Ni-Al-Ti ohmic contacts on 1 x 10(20) cm(-3) Al+ ion implanted 4H-SiC 36
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 35
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 35
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 35
Totale 7.184
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Categoria #
all - tutte 35.988
article - articoli 16.991
book - libri 111
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 231
Totale 53.321
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 3 9 28 34
2024/20253.694 12 15 319 183 716 136 39 241 74 120 992 847
2025/20267.978 327 1.008 1.385 1.050 1.161 268 957 367 1.025 306 124 0
Totale 11.746