CNR Institutional Research Information System

NIPOTI, ROBERTA
 Distribuzione geografica
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Continente #
AS - Asia 5.398
NA - Nord America 4.698
EU - Europa 1.851
SA - Sud America 1.014
AF - Africa 89
Continente sconosciuto - Info sul continente non disponibili 45
OC - Oceania 6
Totale 13.101
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Nazione #
US - Stati Uniti d'America 4.515
SG - Singapore 2.264
CN - Cina 1.341
BR - Brasile 790
RU - Federazione Russa 670
VN - Vietnam 574
HK - Hong Kong 469
FR - Francia 317
IT - Italia 302
KR - Corea 233
DE - Germania 157
NL - Olanda 99
IN - India 94
CA - Canada 81
GB - Regno Unito 80
BD - Bangladesh 79
JP - Giappone 77
AR - Argentina 62
FI - Finlandia 55
CO - Colombia 49
ID - Indonesia 48
EC - Ecuador 42
MX - Messico 35
IL - Israele 28
VE - Venezuela 28
ES - Italia 27
ZA - Sudafrica 26
IQ - Iraq 24
TR - Turchia 24
PL - Polonia 23
SE - Svezia 20
UZ - Uzbekistan 18
UA - Ucraina 16
PY - Paraguay 14
SA - Arabia Saudita 13
MA - Marocco 12
PH - Filippine 12
PK - Pakistan 12
AE - Emirati Arabi Uniti 11
CR - Costa Rica 11
JM - Giamaica 11
KE - Kenya 11
CL - Cile 10
NI - Nicaragua 10
TW - Taiwan 10
BO - Bolivia 9
CZ - Repubblica Ceca 9
MY - Malesia 9
NP - Nepal 9
IE - Irlanda 8
AL - Albania 7
DO - Repubblica Dominicana 7
TT - Trinidad e Tobago 7
AT - Austria 6
HN - Honduras 6
LT - Lituania 6
PT - Portogallo 6
TN - Tunisia 6
UY - Uruguay 6
AZ - Azerbaigian 5
DK - Danimarca 5
DZ - Algeria 5
EE - Estonia 5
EG - Egitto 5
JO - Giordania 5
BE - Belgio 4
ET - Etiopia 4
PA - Panama 4
PE - Perù 4
TH - Thailandia 4
AU - Australia 3
BB - Barbados 3
CH - Svizzera 3
CI - Costa d'Avorio 3
CW - ???statistics.table.value.countryCode.CW??? 3
GT - Guatemala 3
KG - Kirghizistan 3
KW - Kuwait 3
KZ - Kazakistan 3
LA - Repubblica Popolare Democratica del Laos 3
LB - Libano 3
OM - Oman 3
RO - Romania 3
RS - Serbia 3
TJ - Tagikistan 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BG - Bulgaria 2
BH - Bahrain 2
BS - Bahamas 2
BY - Bielorussia 2
HR - Croazia 2
HU - Ungheria 2
KH - Cambogia 2
LK - Sri Lanka 2
LV - Lettonia 2
MD - Moldavia 2
NG - Nigeria 2
NO - Norvegia 2
PS - Palestinian Territory 2
Totale 13.030
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Città #
Singapore 1.375
Dallas 1.292
Santa Clara 837
Hefei 561
Hong Kong 464
San Jose 394
Ashburn 332
Lauterbourg 245
Beijing 227
Seoul 224
Ho Chi Minh City 194
Hanoi 138
Los Angeles 110
Frankfurt am Main 100
Bologna 85
São Paulo 68
New York 46
Buffalo 43
Orem 43
Tokyo 39
Da Nang 33
Helsinki 32
Phoenix 29
Milan 27
Minamishinagawa 26
Brooklyn 24
Haiphong 24
Houston 24
Rio de Janeiro 24
Amsterdam 20
Belo Horizonte 20
Montreal 20
Chicago 19
Warsaw 19
Chennai 18
Atlanta 17
Council Bluffs 17
Denver 16
Guangzhou 16
Bengaluru 15
Bogotá 14
Brasília 14
Charlotte 14
London 14
Johannesburg 13
Manchester 13
Modena 13
Philadelphia 13
Stockholm 13
Curitiba 12
Mumbai 12
Porto Alegre 12
Rome 12
Turku 12
Washington 12
Biên Hòa 11
Dhaka 11
Guayaquil 11
Nairobi 11
Quito 11
Tashkent 11
Toronto 11
Campinas 10
Caxias do Sul 10
Düsseldorf 10
Managua 10
Naples 10
San José 10
The Bronx 10
Thái Bình 10
Hải Dương 9
Lappeenranta 9
Mexico City 9
Munich 9
Piscataway 9
Queens 9
Ribeirão Preto 9
San Francisco 9
Boardman 8
Buenos Aires 8
Falkenstein 8
Fortaleza 8
Nuremberg 8
West Jordan 8
Asunción 7
Bắc Giang 7
Caracas 7
Elk Grove Village 7
Istanbul 7
Juiz de Fora 7
Louisville 7
Memphis 7
Newark 7
Oklahoma City 7
Poplar 7
Raleigh 7
Tampa 7
Trieste 7
Baghdad 6
Boston 6
Totale 7.837
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Nome #
< 0001 > channeling stopping power of MeV He+ ions in 4H-and 6H-SiC 2.133
Machine Learning Techniques for Pile-Up Rejection in Cryogenic Calorimeters 122
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC. 105
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 96
Native Silicon Oxide Properties Determined by Doping 95
4H-SiC surface morphology after Al ion implantation and annealing with C-cap 95
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 90
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 88
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap 87
Novel technique for the study of pile-up events in cryogenic bolometers 86
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 85
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 °C 85
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC 80
Characterization of MOS capacitors fabricated on n-type 4H-SiC 79
J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C 79
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 77
Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour 76
1300°c annealing of 1×1020 al+ ion implanted 3C-SiC 75
A CUPID Li2 100MoO4 scintillating bolometer tested in the CROSS underground facility 73
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 72
Steady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET 72
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 72
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 71
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 69
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 69
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 68
3 × 1018 - 1 × 1019 cm-3 al+ ion implanted 4h-sic: Annealing time effect 68
Boron Doping of Silicon Using Excimer Lasers 67
Investigating Mesa Structure Impact on C-V Measurements 66
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 64
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes 62
High Dose Al+ Implanted and Microwave Annealed 4H-SiC 60
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 60
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 58
Estimation of Activation and Compensation Ratios in Al+ ion Implanted 4H-SiC: Comparison of Two Methodologies 58
Ion implanted phosphorous for 4H-SiC VDMOSFETs source regions: Effect of the post implantation annealing time 58
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures 57
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 54
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 54
A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data 54
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 54
Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC 54
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 53
Oxygen Influence on Titanium Silicide Formation 52
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 52
Forward current of Al+ implanted 4H-SiC diodes: A study on the periphery and area components 52
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 51
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC 51
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 50
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 50
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology 50
1300°C annealing of 1 × 10^20 cm^-3 Al+ ion implanted 3C-SiC/Si 50
A highly effective edge termination design for SiC planar high power devices 49
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 49
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 49
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 48
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 48
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 48
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 48
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 48
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 48
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 47
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 47
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 46
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 46
Simulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers 46
The role of defects on forward current in 4H-SiC p-i-n diodes 46
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 46
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 46
Improving doping efficiency of P(+) implanted ions in 4H-SiC 45
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 45
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 45
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 45
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 44
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 44
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 44
X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC 44
High Dose Al + Implanted and Microwave Annealed 4H-SiC 43
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 43
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 43
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 43
TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM 43
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC 43
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 42
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 42
Simulation and exerimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes 41
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 41
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 41
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation 41
Dlts study on Al+ ion implanted and 1950°c annealed p-i-n 4H-SiC vertical diodes 40
Al+ ion implanted 4H-SiC vertical p+-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes 40
Point defects investigation of high energy proton irradiated SiC p+-i-n diodes 40
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing 40
Al + implanted vertical 4H-SiC p-i-n diodes: Experimental and simulated forward current-voltage characteristics 40
Low temperature oxidation of SiC preamorphized by ion implantation 39
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4 ?cm2 specific resistance on 0.1-1 ?cm p-type 4H-SiC 39
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 39
ANNEALING OF PHOSPHORUS IMPLANTED SILICONWAFERS BY MULTISCANNING ELECTRON-BEAM - SOLAR-CELLS APPLICATION 39
Al+ ion implanted 4H-SiC: Electrical activation versus annealing time 39
Totale 7.765
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Categoria #
all - tutte 43.717
article - articoli 21.057
book - libri 136
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 282
Totale 65.192
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 3 9 28 34
2024/20253.694 12 15 319 183 716 136 39 241 74 120 992 847
2025/20268.103 327 1.008 1.385 1.050 1.161 268 957 367 1.025 306 133 116
2026/20271.230 330 291 609 0 0 0 0 0 0 0 0 0
Totale 13.101