CNR Institutional Research Information System

NIPOTI, ROBERTA
 Distribuzione geografica
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Continente #
AS - Asia 4.354
NA - Nord America 3.072
SA - Sud America 902
EU - Europa 647
AF - Africa 76
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 2
Totale 9.059
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Nazione #
US - Stati Uniti d'America 2.986
SG - Singapore 1.895
CN - Cina 1.039
BR - Brasile 742
HK - Hong Kong 440
VN - Vietnam 407
KR - Corea 230
IT - Italia 194
NL - Olanda 93
IN - India 67
GB - Regno Unito 60
DE - Germania 59
AR - Argentina 57
FI - Finlandia 48
JP - Giappone 39
FR - Francia 38
BD - Bangladesh 37
CA - Canada 33
ID - Indonesia 33
EC - Ecuador 31
MX - Messico 28
IL - Israele 27
ES - Italia 25
ZA - Sudafrica 24
IQ - Iraq 23
PL - Polonia 22
TR - Turchia 20
CO - Colombia 18
RU - Federazione Russa 17
VE - Venezuela 16
SE - Svezia 15
UZ - Uzbekistan 15
PY - Paraguay 13
MA - Marocco 12
UA - Ucraina 12
CL - Cile 10
KE - Kenya 9
TW - Taiwan 9
AE - Emirati Arabi Uniti 8
SA - Arabia Saudita 8
CZ - Repubblica Ceca 7
DO - Repubblica Dominicana 7
IE - Irlanda 7
NP - Nepal 7
PK - Pakistan 7
BO - Bolivia 6
PH - Filippine 6
TN - Tunisia 6
UY - Uruguay 6
AL - Albania 5
AT - Austria 5
AZ - Azerbaigian 5
EG - Egitto 5
TT - Trinidad e Tobago 5
ET - Etiopia 4
PT - Portogallo 4
AU - Australia 3
CI - Costa d'Avorio 3
DK - Danimarca 3
DZ - Algeria 3
EE - Estonia 3
GT - Guatemala 3
JO - Giordania 3
KG - Kirghizistan 3
KW - Kuwait 3
KZ - Kazakistan 3
LT - Lituania 3
PA - Panama 3
PE - Perù 3
RS - Serbia 3
TJ - Tagikistan 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BB - Barbados 2
BE - Belgio 2
BG - Bulgaria 2
BH - Bahrain 2
BY - Bielorussia 2
CR - Costa Rica 2
HU - Ungheria 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LV - Lettonia 2
MD - Moldavia 2
NG - Nigeria 2
NO - Norvegia 2
OM - Oman 2
RO - Romania 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BJ - Benin 1
CG - Congo 1
CH - Svizzera 1
DJ - Gibuti 1
FJ - Figi 1
GE - Georgia 1
GN - Guinea 1
GR - Grecia 1
HN - Honduras 1
Totale 9.044
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Città #
Dallas 1.284
Singapore 1.209
Santa Clara 816
Hefei 561
Hong Kong 439
Seoul 224
Beijing 220
Ho Chi Minh City 152
Ashburn 148
San Jose 100
Hanoi 97
Bologna 80
Los Angeles 67
São Paulo 64
Buffalo 38
Helsinki 28
Minamishinagawa 26
New York 26
Rio de Janeiro 23
Belo Horizonte 19
Da Nang 19
Warsaw 18
Amsterdam 16
Brooklyn 16
Orem 16
Bengaluru 15
Frankfurt am Main 15
Haiphong 15
Denver 13
Stockholm 13
Johannesburg 12
London 12
Milan 12
Turku 12
Curitiba 11
Guangzhou 11
Modena 11
Caxias do Sul 10
Düsseldorf 10
Tokyo 10
Biên Hòa 9
Campinas 9
Dhaka 9
Houston 9
Montreal 9
Munich 9
Nairobi 9
Porto Alegre 9
Ribeirão Preto 9
Atlanta 8
Buenos Aires 8
Chennai 8
Falkenstein 8
Guayaquil 8
Hải Dương 8
Lappeenranta 8
Manchester 8
Mexico City 8
Phoenix 8
Quito 8
Tashkent 8
Thái Bình 8
West Jordan 8
Fortaleza 7
Istanbul 7
Juiz de Fora 7
San Francisco 7
Trieste 7
Asunción 6
Brasília 6
Bắc Giang 6
Casablanca 6
Guarulhos 6
Montevideo 6
Parma 6
Poplar 6
Salvador 6
Trento 6
Ankara 5
Baghdad 5
Caracas 5
Dublin 5
Duque de Caxias 5
Hortolândia 5
Jakarta 5
Kathmandu 5
Lauterbourg 5
Mumbai 5
Portsmouth 5
Quận Bốn 5
Recife 5
Sorocaba 5
São Bernardo do Campo 5
São Vicente 5
Toronto 5
Vienna 5
Addis Ababa 4
Americana 4
Baku 4
Bauru 4
Totale 6.282
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Nome #
< 0001 > channeling stopping power of MeV He+ ions in 4H-and 6H-SiC 1.374
Activation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC. 87
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 76
Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si 72
Machine Learning Techniques for Pile-Up Rejection in Cryogenic Calorimeters 72
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation 72
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 71
4H-SiC surface morphology after Al ion implantation and annealing with C-cap 70
Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour 68
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 °C 68
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC 66
Characterization of MOS capacitors fabricated on n-type 4H-SiC 66
J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C 66
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 65
Novel technique for the study of pile-up events in cryogenic bolometers 65
1300°c annealing of 1×1020 al+ ion implanted 3C-SiC 63
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 62
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law 61
Steady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET 58
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si 58
Native Silicon Oxide Properties Determined by Doping 58
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 57
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap 56
A CUPID Li2 100MoO4 scintillating bolometer tested in the CROSS underground facility 55
Boron Doping of Silicon Using Excimer Lasers 52
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 51
High Dose Al+ Implanted and Microwave Annealed 4H-SiC 51
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup 47
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes 47
Investigating Mesa Structure Impact on C-V Measurements 46
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 45
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures 44
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 44
GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS 44
Ion implanted phosphorous for 4H-SiC VDMOSFETs source regions: Effect of the post implantation annealing time 44
3 × 1018 - 1 × 1019 cm-3 al+ ion implanted 4h-sic: Annealing time effect 42
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 41
Estimation of Activation and Compensation Ratios in Al+ ion Implanted 4H-SiC: Comparison of Two Methodologies 41
Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers 41
Forward current of Al+ implanted 4H-SiC diodes: A study on the periphery and area components 41
A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data 41
Oxygen Influence on Titanium Silicide Formation 39
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 39
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC 39
Hetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor 39
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 38
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 38
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 37
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 37
High Dose Al + Implanted and Microwave Annealed 4H-SiC 36
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area 36
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 36
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 36
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology 36
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 35
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 35
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 35
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 35
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 35
1300°C annealing of 1 × 10^20 cm^-3 Al+ ion implanted 3C-SiC/Si 35
Simulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers 34
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 34
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 34
The role of defects on forward current in 4H-SiC p-i-n diodes 34
A highly effective edge termination design for SiC planar high power devices 34
Ni-Al-Ti ohmic contacts on 1 x 10(20) cm(-3) Al+ ion implanted 4H-SiC 34
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC 34
Thermal stability of 1x10(20) cm(-3) Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 degrees C 34
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 33
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 33
Charged particle detection properties of epitaxial 4H-SiC Schottky diodes 33
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 33
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 33
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 33
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 33
Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition 33
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing 33
Ni-Al-Ti ohmic contacts with preserved form factor and few 10- 4 ?cm2 specific resistance on 0.1-1 ?cm p-type 4H-SiC 32
Simulation and exerimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes 32
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel 32
Point defects investigation of high energy proton irradiated SiC p+-i-n diodes 32
2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions 32
Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC 32
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 32
Low temperature oxidation of SiC preamorphized by ion implantation 31
Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC 31
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison 30
Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation 30
Dlts study on Al+ ion implanted and 1950°c annealed p-i-n 4H-SiC vertical diodes 30
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 30
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes 30
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) 30
1950 °C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time 30
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 30
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors 29
Al+ ion implanted 4H-SiC vertical p+-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes 29
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 29
Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition 29
Ion implantation induced swelling in 6H-SiC 29
A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient 28
Totale 5.612
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Categoria #
all - tutte 30.036
article - articoli 14.324
book - libri 99
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 189
Totale 44.648
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202474 0 0 0 0 0 0 0 0 3 9 28 34
2024/20253.694 12 15 319 183 716 136 39 241 74 120 992 847
2025/20265.331 327 1.008 1.385 1.050 1.161 268 132 0 0 0 0 0
Totale 9.099