CNR Institutional Research Information System

POGGI, ANTONELLA
 Distribuzione geografica
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Continente #
AS - Asia 2.096
NA - Nord America 855
SA - Sud America 467
EU - Europa 240
AF - Africa 39
OC - Oceania 3
Totale 3.700
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Nazione #
SG - Singapore 976
US - Stati Uniti d'America 817
CN - Cina 430
BR - Brasile 388
HK - Hong Kong 230
VN - Vietnam 220
KR - Corea 85
GB - Regno Unito 35
NL - Olanda 32
DE - Germania 29
IN - India 27
IT - Italia 27
BD - Bangladesh 25
FI - Finlandia 25
AR - Argentina 21
FR - Francia 19
ZA - Sudafrica 18
IQ - Iraq 17
MX - Messico 17
EC - Ecuador 16
CA - Canada 13
ES - Italia 13
ID - Indonesia 13
IL - Israele 12
JP - Giappone 12
TR - Turchia 11
VE - Venezuela 11
PY - Paraguay 10
UA - Ucraina 10
CO - Colombia 9
PL - Polonia 9
SE - Svezia 9
UZ - Uzbekistan 8
CL - Cile 5
RU - Federazione Russa 5
TN - Tunisia 5
MA - Marocco 4
PE - Perù 4
PK - Pakistan 4
AT - Austria 3
AU - Australia 3
CZ - Repubblica Ceca 3
EG - Egitto 3
HU - Ungheria 3
PH - Filippine 3
TW - Taiwan 3
AM - Armenia 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EE - Estonia 2
ET - Etiopia 2
KW - Kuwait 2
LB - Libano 2
LU - Lussemburgo 2
LV - Lettonia 2
PA - Panama 2
QA - Qatar 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BY - Bielorussia 1
CR - Costa Rica 1
DJ - Gibuti 1
GA - Gabon 1
GN - Guinea 1
GR - Grecia 1
GT - Guatemala 1
HR - Croazia 1
IE - Irlanda 1
IR - Iran 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
MD - Moldavia 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PT - Portogallo 1
RO - Romania 1
RS - Serbia 1
SI - Slovenia 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 3.700
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Città #
Singapore 621
Santa Clara 390
Hong Kong 230
Hefei 213
Beijing 112
Seoul 85
Ho Chi Minh City 72
Ashburn 57
Hanoi 50
Dallas 40
San Jose 34
Los Angeles 32
Buffalo 27
São Paulo 26
Helsinki 15
New York 15
Guangzhou 10
Haiphong 10
Minamishinagawa 10
Turku 10
Belo Horizonte 9
Da Nang 9
Stockholm 9
Ankara 8
Curitiba 8
Frankfurt am Main 8
Guarulhos 8
Johannesburg 8
Munich 8
Rio de Janeiro 8
Poplar 7
Atlanta 6
Bengaluru 6
Bologna 6
Brasília 6
Brooklyn 6
Thái Bình 6
Warsaw 6
Asunción 5
Biên Hòa 5
Bắc Giang 5
Chennai 5
Denver 5
Falkenstein 5
Guayaquil 5
Orem 5
Phoenix 5
Ribeirão Preto 5
Salvador 5
Tashkent 5
Baghdad 4
Betim 4
Buenos Aires 4
Dhaka 4
Juiz de Fora 4
Lang Son 4
Manchester 4
Mexico City 4
Milan 4
Ninh Bình 4
Novo Hamburgo 4
Quito 4
Recife 4
San Francisco 4
The Dalles 4
Thái Nguyên 4
Aci Castello 3
Bexley 3
Boston 3
Bắc Ninh 3
Caracas 3
Casablanca 3
Franca 3
Goiânia 3
Houston 3
Lima 3
London 3
Lấp Vò 3
Montreal 3
Osasco 3
Pelotas 3
Phủ Lý 3
Pittsburgh 3
Quảng Ngãi 3
Quận Bốn 3
Seattle 3
Sulaymaniyah 3
São Bernardo do Campo 3
São Gonçalo 3
São José do Rio Preto 3
Trento 3
Três Lagoas 3
Addis Ababa 2
Americana 2
Amparo 2
Amsterdam 2
Araxá 2
Bagé 2
Bandung 2
Barcelona 2
Totale 2.409
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Nome #
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 71
Strain Evaluation in SiC MEMS Test Structures 69
Characterization of MOS capacitors fabricated on n-type 4H-SiC 66
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 65
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 62
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 57
Advanced microsensor technology using porous silicon layers permeated with Sn-V mixed oxides 57
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 51
beta-SiC NWs grown on patterned and MEMS silicon substrates 51
THERMAL CONDUCTIVITY DETECTOR (TCD) FOR APPLICATIONS IN FAST GAS- CHROMATOGRAPHIC (GC) 48
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 45
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 41
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 41
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 39
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 38
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 37
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 37
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 36
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 36
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 35
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 35
Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors 35
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 35
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 34
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 34
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 33
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 33
Il Tecnopolo AMBIMAT del CNR 33
Permeated porous silicon suspended membrane as sub-ppm benzene sensor for air quality monitoring 33
ß-SiC NWs grown on patterned and MEMS silicon substrates 33
Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography 33
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 33
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 33
A new sensitive and fast detection system for amphetamine type stimulants (ATS), based on gas-chromatography (GC) and hollow fiber infrared absorption spectroscopy (HF-IRAS) 33
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 33
A novel pneumatically driven SU-8 microvalve for high speed gas chromatographic applications 33
Composition and structure of tin/vanadium oxide surfaces for chemical sensing applications 32
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 32
Low temperature oxidation of SiC preamorphized by ion implantation 31
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 30
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 30
Permeated porous silicon for hydrocarbon sensor fabrication 30
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 29
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers 28
Sensori di gas a film sottile su substrati di Si microlavorato 27
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC 27
Sviluppo di un flusso di processo tecnologico per la realizzazione di rivelatori SPAD monolitici 27
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation 27
Processo di ossidazione di semiconduttori in carburo di silicio 26
Effects of Very High Neutron Fluence Irradiation 26
METHOD FOR MAKING A SILICON SEPARATION MICROCOLUMN FOR CHROMATOGRAPHY OR GAS CHROMATOGRAPHY 26
Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC 25
Stresses in SiC MEMS test structures 25
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 25
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 25
TEM characterisation of porous silicon 24
Passivation by N implantation of the SiO2/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability 24
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications 23
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states 23
Silicon Carbide and Related Materials 2004 23
Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions 23
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor 22
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 22
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 22
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 21
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O-2 oxidation ambient 21
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor 21
Minimum ionizing particle detector based on p(+)n junction SiC diode 20
Shallow Junction Formation Using MoSi2 as Diffusion Source 20
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 20
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET 20
Preparation of Ni2Si contacts: effect on SiC diode operation 19
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC 19
Ni-silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-type and Barrier Height on p-type Epilayer 19
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC 19
Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements 19
Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data 19
MICROSISTEMI PER DIAGNOSTICA GENETICA 19
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 19
Minimum ionizing particle detector based on p+n junction SiC diode 19
Minimum ionizing particle detector based on p+n junction SiC diode 19
Porous silicon layer permeated with Sn-V mixed oxides for hydrocarbon sensor fabrication 19
Fabbricazione di MOSFET ad elevata mobilità su 4H-SiC 18
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 18
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature 18
Silicon Carbide Particle Detectors: Analysis and Simulation 18
Preliminary Measurements of Charge Collection of p+/n Junction SiC Detectors and Simulations of Schottky Diodes 18
Structural characterisation of alloyed Al/Ti and Ti contacts on SiC 18
RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS 18
SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature 18
Current analysis of ion implanted p(+)/n 4H-SiC junctions: post-implantation annealing in Ar ambient 18
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p(+)n junctions 18
Correlation between current transport and defects in n+/p 6H-SiC diodes 17
SiC donor doping by 300°C P implantation: characterisation of the doped layer properties in dependence of the post-implantation annealing temperature 17
Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing 17
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 17
Polycrystalline 3C-SiC films deposited on 100 mm Si wafers for MEMS 17
Effect of passivating oxides on surface recombination velocity in silicon 17
Strain evaluation in SiC MEMS test structures 17
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 17
Totale 2.920
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Categoria #
all - tutte 14.157
article - articoli 7.422
book - libri 99
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.678
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202422 0 0 0 0 0 0 0 0 2 0 20 0
2024/20251.756 6 10 168 84 350 47 4 76 18 49 528 416
2025/20261.922 148 240 310 503 568 111 42 0 0 0 0 0
Totale 3.700