CNR Institutional Research Information System

POGGI, ANTONELLA
 Distribuzione geografica
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Continente #
AS - Asia 2.589
NA - Nord America 1.229
SA - Sud America 477
EU - Europa 464
AF - Africa 42
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.806
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Nazione #
US - Stati Uniti d'America 1.170
SG - Singapore 1.166
CN - Cina 590
BR - Brasile 394
VN - Vietnam 294
HK - Hong Kong 238
FR - Francia 173
KR - Corea 87
IT - Italia 73
JP - Giappone 44
GB - Regno Unito 39
IN - India 35
DE - Germania 34
NL - Olanda 33
BD - Bangladesh 32
FI - Finlandia 26
AR - Argentina 21
CA - Canada 20
ZA - Sudafrica 18
EC - Ecuador 17
IQ - Iraq 17
MX - Messico 17
ID - Indonesia 15
ES - Italia 13
IL - Israele 12
PY - Paraguay 11
TR - Turchia 11
UA - Ucraina 11
VE - Venezuela 11
CO - Colombia 10
PL - Polonia 10
UZ - Uzbekistan 10
SE - Svezia 9
TN - Tunisia 6
CL - Cile 5
CR - Costa Rica 5
PE - Perù 5
PK - Pakistan 5
RU - Federazione Russa 5
AU - Australia 4
MA - Marocco 4
PH - Filippine 4
AT - Austria 3
BE - Belgio 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
EG - Egitto 3
HN - Honduras 3
HU - Ungheria 3
SA - Arabia Saudita 3
TW - Taiwan 3
AM - Armenia 2
AZ - Azerbaigian 2
BH - Bahrain 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EE - Estonia 2
ET - Etiopia 2
GR - Grecia 2
GT - Guatemala 2
HR - Croazia 2
IR - Iran 2
KW - Kuwait 2
LB - Libano 2
LT - Lituania 2
LU - Lussemburgo 2
LV - Lettonia 2
NI - Nicaragua 2
PA - Panama 2
PR - Porto Rico 2
PT - Portogallo 2
QA - Qatar 2
RO - Romania 2
RS - Serbia 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BY - Bielorussia 1
BZ - Belize 1
CH - Svizzera 1
CW - ???statistics.table.value.countryCode.CW??? 1
DJ - Gibuti 1
GA - Gabon 1
GN - Guinea 1
IE - Irlanda 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MD - Moldavia 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
SI - Slovenia 1
TG - Togo 1
Totale 4.803
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Città #
Singapore 699
Santa Clara 392
Hong Kong 236
Hefei 213
Lauterbourg 133
Ashburn 117
Beijing 113
San Jose 111
Ho Chi Minh City 95
Seoul 85
Hanoi 66
Los Angeles 43
Dallas 40
Tokyo 33
Buffalo 30
São Paulo 27
New York 20
Helsinki 16
Haiphong 15
Milan 15
Da Nang 14
Guangzhou 13
Orem 11
Frankfurt am Main 10
Minamishinagawa 10
Turku 10
Belo Horizonte 9
Bologna 9
Brooklyn 9
Stockholm 9
Ankara 8
Curitiba 8
Guarulhos 8
Johannesburg 8
Munich 8
Rio de Janeiro 8
Atlanta 7
Houston 7
Poplar 7
Rome 7
Warsaw 7
Asunción 6
Bengaluru 6
Biên Hòa 6
Brasília 6
Bắc Giang 6
Chennai 6
Denver 6
Phoenix 6
Tashkent 6
Thái Bình 6
Thái Nguyên 6
Falkenstein 5
Guayaquil 5
Manchester 5
Mumbai 5
Ninh Bình 5
Pittsburgh 5
Ribeirão Preto 5
Salvador 5
San José 5
Toronto 5
Baghdad 4
Betim 4
Buenos Aires 4
Bắc Ninh 4
Dhaka 4
Durham 4
Goiânia 4
Juiz de Fora 4
Lang Son 4
Mexico City 4
Naples 4
Novo Hamburgo 4
Queens 4
Quito 4
Recife 4
San Francisco 4
São José do Rio Preto 4
The Bronx 4
The Dalles 4
Aci Castello 3
Amsterdam 3
Bexley 3
Boston 3
Caracas 3
Casablanca 3
Chicago 3
Elk Grove Village 3
Florence 3
Fortaleza 3
Franca 3
Hải Dương 3
Lima 3
London 3
Lấp Vò 3
Memphis 3
Milwaukee 3
Montreal 3
Nuremberg 3
Totale 2.935
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Nome #
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 84
Strain Evaluation in SiC MEMS Test Structures 80
Characterization of MOS capacitors fabricated on n-type 4H-SiC 75
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 70
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 68
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 65
beta-SiC NWs grown on patterned and MEMS silicon substrates 65
THERMAL CONDUCTIVITY DETECTOR (TCD) FOR APPLICATIONS IN FAST GAS- CHROMATOGRAPHIC (GC) 64
Advanced microsensor technology using porous silicon layers permeated with Sn-V mixed oxides 61
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 56
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 54
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 51
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 49
Il Tecnopolo AMBIMAT del CNR 48
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 47
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 47
ß-SiC NWs grown on patterned and MEMS silicon substrates 47
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 47
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 46
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 46
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 45
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 44
Permeated porous silicon suspended membrane as sub-ppm benzene sensor for air quality monitoring 44
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 44
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 44
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 44
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 44
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 43
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 43
Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography 42
A novel pneumatically driven SU-8 microvalve for high speed gas chromatographic applications 42
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 41
Sviluppo di un flusso di processo tecnologico per la realizzazione di rivelatori SPAD monolitici 41
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 40
Composition and structure of tin/vanadium oxide surfaces for chemical sensing applications 40
Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors 40
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 40
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 39
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 39
TEM characterisation of porous silicon 39
A new sensitive and fast detection system for amphetamine type stimulants (ATS), based on gas-chromatography (GC) and hollow fiber infrared absorption spectroscopy (HF-IRAS) 39
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation 38
Low temperature oxidation of SiC preamorphized by ion implantation 37
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 37
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 37
Permeated porous silicon for hydrocarbon sensor fabrication 36
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers 35
Effects of Very High Neutron Fluence Irradiation 35
Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC 33
Stresses in SiC MEMS test structures 33
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 33
Passivation by N implantation of the SiO2/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability 33
METHOD FOR MAKING A SILICON SEPARATION MICROCOLUMN FOR CHROMATOGRAPHY OR GAS CHROMATOGRAPHY 33
Minimum ionizing particle detector based on p(+)n junction SiC diode 32
Sensori di gas a film sottile su substrati di Si microlavorato 32
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC 32
Processo di ossidazione di semiconduttori in carburo di silicio 31
Shallow Junction Formation Using MoSi2 as Diffusion Source 31
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states 30
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 30
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor 29
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 29
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 29
Silicon Carbide and Related Materials 2004 29
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 28
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications 28
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC 28
Polycrystalline 3C-SiC films deposited on 100 mm Si wafers for MEMS 28
Silicon Carbide Particle Detectors: Analysis and Simulation 28
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor 28
Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions 28
MICROSISTEMI PER DIAGNOSTICA GENETICA 27
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O-2 oxidation ambient 26
Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature 26
SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature 26
Micro-systems for genetic diagnostics 26
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 26
Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing 25
Fabbricazione di MOSFET ad elevata mobilità su 4H-SiC 25
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 25
Ni-silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-type and Barrier Height on p-type Epilayer 25
Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements 25
Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data 25
INTRINSIC GETTERING OF CR IMPURITIES IN P-TYPE CZ SILICON 25
RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS 25
MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen 25
Minimum ionizing particle detector based on p+n junction SiC diode 25
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p(+)n junctions 25
SiC donor doping by 300°C P implantation: characterisation of the doped layer properties in dependence of the post-implantation annealing temperature 24
Preparation of Ni2Si contacts: effect on SiC diode operation 24
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET 24
Minimum ionizing particle detector based on p+n junction SiC diode 24
ELECTRICAL-PROPERTIES OF RAPID THERMAL ANNEALING-INDUCED DEFECTS IN SILICON 24
Correlation between current transport and defects in n+/p 6H-SiC diodes 23
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC 23
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature 23
Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor 23
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 23
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 23
Totale 3.731
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Categoria #
all - tutte 18.586
article - articoli 9.879
book - libri 122
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.587
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202422 0 0 0 0 0 0 0 0 2 0 20 0
2024/20251.756 6 10 168 84 350 47 4 76 18 49 528 416
2025/20262.896 148 240 310 503 568 111 439 175 160 132 57 53
2026/2027132 132 0 0 0 0 0 0 0 0 0 0 0
Totale 4.806