CNR Institutional Research Information System

POGGI, ANTONELLA
 Distribuzione geografica
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Continente #
AS - Asia 2.579
NA - Nord America 1.077
SA - Sud America 475
EU - Europa 439
AF - Africa 42
OC - Oceania 4
Totale 4.616
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Nazione #
SG - Singapore 1.166
US - Stati Uniti d'America 1.033
CN - Cina 587
BR - Brasile 393
VN - Vietnam 293
HK - Hong Kong 238
FR - Francia 173
KR - Corea 86
IT - Italia 50
JP - Giappone 44
GB - Regno Unito 39
IN - India 35
DE - Germania 34
NL - Olanda 33
BD - Bangladesh 27
FI - Finlandia 26
AR - Argentina 21
ZA - Sudafrica 18
IQ - Iraq 17
MX - Messico 17
EC - Ecuador 16
CA - Canada 15
ID - Indonesia 15
ES - Italia 13
IL - Israele 12
PY - Paraguay 11
TR - Turchia 11
UA - Ucraina 11
VE - Venezuela 11
CO - Colombia 10
PL - Polonia 10
UZ - Uzbekistan 10
SE - Svezia 9
TN - Tunisia 6
CL - Cile 5
PE - Perù 5
PK - Pakistan 5
RU - Federazione Russa 5
AU - Australia 4
MA - Marocco 4
PH - Filippine 4
AT - Austria 3
BE - Belgio 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
EG - Egitto 3
HU - Ungheria 3
SA - Arabia Saudita 3
TW - Taiwan 3
AM - Armenia 2
AZ - Azerbaigian 2
BH - Bahrain 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EE - Estonia 2
ET - Etiopia 2
GR - Grecia 2
HR - Croazia 2
IR - Iran 2
KW - Kuwait 2
LB - Libano 2
LU - Lussemburgo 2
LV - Lettonia 2
PA - Panama 2
PR - Porto Rico 2
QA - Qatar 2
RO - Romania 2
RS - Serbia 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BY - Bielorussia 1
CH - Svizzera 1
CR - Costa Rica 1
DJ - Gibuti 1
GA - Gabon 1
GN - Guinea 1
GT - Guatemala 1
IE - Irlanda 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
MD - Moldavia 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
OM - Oman 1
PT - Portogallo 1
SI - Slovenia 1
TG - Togo 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
UY - Uruguay 1
Totale 4.616
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Città #
Singapore 699
Santa Clara 391
Hong Kong 236
Hefei 213
Lauterbourg 133
Beijing 113
San Jose 108
Ho Chi Minh City 95
Ashburn 91
Seoul 85
Hanoi 65
Dallas 40
Los Angeles 40
Tokyo 33
Buffalo 30
São Paulo 27
New York 20
Helsinki 16
Haiphong 15
Da Nang 14
Guangzhou 13
Orem 11
Frankfurt am Main 10
Milan 10
Minamishinagawa 10
Turku 10
Belo Horizonte 9
Bologna 9
Stockholm 9
Ankara 8
Curitiba 8
Guarulhos 8
Johannesburg 8
Munich 8
Rio de Janeiro 8
Atlanta 7
Brooklyn 7
Poplar 7
Warsaw 7
Asunción 6
Bengaluru 6
Biên Hòa 6
Brasília 6
Bắc Giang 6
Chennai 6
Tashkent 6
Thái Bình 6
Thái Nguyên 6
Denver 5
Falkenstein 5
Guayaquil 5
Houston 5
Manchester 5
Mumbai 5
Ninh Bình 5
Phoenix 5
Ribeirão Preto 5
Salvador 5
Baghdad 4
Betim 4
Buenos Aires 4
Bắc Ninh 4
Dhaka 4
Goiânia 4
Juiz de Fora 4
Lang Son 4
Mexico City 4
Novo Hamburgo 4
Quito 4
Recife 4
San Francisco 4
The Dalles 4
Toronto 4
Aci Castello 3
Amsterdam 3
Bexley 3
Boston 3
Caracas 3
Casablanca 3
Elk Grove Village 3
Fortaleza 3
Franca 3
Hải Dương 3
Lima 3
London 3
Lấp Vò 3
Montreal 3
Nuremberg 3
Osasco 3
Paris 3
Pelotas 3
Philadelphia 3
Phủ Lý 3
Pittsburgh 3
Quảng Ngãi 3
Quận Bốn 3
Rome 3
Seattle 3
Shanghai 3
Sulaymaniyah 3
Totale 2.876
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Nome #
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature 83
Strain Evaluation in SiC MEMS Test Structures 79
Characterization of MOS capacitors fabricated on n-type 4H-SiC 73
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature 70
Oxidation kinetics of ion-amorphized (0001) 6H-SiC: Competition between oxidation and recrystallization processes 67
Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation 65
Advanced microsensor technology using porous silicon layers permeated with Sn-V mixed oxides 60
beta-SiC NWs grown on patterned and MEMS silicon substrates 60
THERMAL CONDUCTIVITY DETECTOR (TCD) FOR APPLICATIONS IN FAST GAS- CHROMATOGRAPHIC (GC) 56
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s 53
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation 52
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si 49
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 46
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET 46
Effects of very high neutron fluence irradiation on p+n junction 4H-SiC diodes 45
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET 45
ß-SiC NWs grown on patterned and MEMS silicon substrates 45
Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation 45
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC 44
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability 44
Il Tecnopolo AMBIMAT del CNR 44
Permeated porous silicon suspended membrane as sub-ppm benzene sensor for air quality monitoring 43
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 43
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation 42
Effects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes 42
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation 41
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 41
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 40
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 40
Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes 39
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations 39
Composition and structure of tin/vanadium oxide surfaces for chemical sensing applications 39
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes 39
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 39
A novel pneumatically driven SU-8 microvalve for high speed gas chromatographic applications 39
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs 38
Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography 38
A new sensitive and fast detection system for amphetamine type stimulants (ATS), based on gas-chromatography (GC) and hollow fiber infrared absorption spectroscopy (HF-IRAS) 38
Sviluppo di un flusso di processo tecnologico per la realizzazione di rivelatori SPAD monolitici 38
Low temperature oxidation of SiC preamorphized by ion implantation 37
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose 37
Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors 37
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC 37
Permeated porous silicon for hydrocarbon sensor fabrication 36
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers 35
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface 35
Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC 32
Stresses in SiC MEMS test structures 32
Sensori di gas a film sottile su substrati di Si microlavorato 32
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC 32
Effects of Very High Neutron Fluence Irradiation 32
Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation 32
Processo di ossidazione di semiconduttori in carburo di silicio 31
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer 31
Shallow Junction Formation Using MoSi2 as Diffusion Source 31
TEM characterisation of porous silicon 31
Passivation by N implantation of the SiO2/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability 31
METHOD FOR MAKING A SILICON SEPARATION MICROCOLUMN FOR CHROMATOGRAPHY OR GAS CHROMATOGRAPHY 31
Minimum ionizing particle detector based on p(+)n junction SiC diode 30
Flusso di processo per la fabbricazione di MOSFET su 4H SiC con elevata mobilita 30
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 29
Silicon Carbide and Related Materials 2004 29
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states 28
Silicon Carbide Particle Detectors: Analysis and Simulation 28
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor 28
Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions 28
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications 27
MICROSISTEMI PER DIAGNOSTICA GENETICA 27
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor 27
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process 27
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 26
Polycrystalline 3C-SiC films deposited on 100 mm Si wafers for MEMS 26
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O-2 oxidation ambient 26
SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature 26
Structural characterization of alloyed Al/Ti and Ti contacts on SiC 26
Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing 25
Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing 25
INTRINSIC GETTERING OF CR IMPURITIES IN P-TYPE CZ SILICON 25
Micro-systems for genetic diagnostics 25
Fabbricazione di MOSFET ad elevata mobilità su 4H-SiC 24
Preparation of Ni2Si contacts: effect on SiC diode operation 24
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC 24
Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements 24
RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS 24
Minimum ionizing particle detector based on p+n junction SiC diode 24
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET 24
Minimum ionizing particle detector based on p+n junction SiC diode 24
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p(+)n junctions 24
Ni-silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-type and Barrier Height on p-type Epilayer 23
Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data 23
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature 23
MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen 23
Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor 23
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process 23
SiC donor doping by 300°C P implantation: characterisation of the doped layer properties in dependence of the post-implantation annealing temperature 22
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC 22
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient 22
Strain evaluation in SiC MEMS test structures 22
Preliminary Measurements of Charge Collection of p+/n Junction SiC Detectors and Simulations of Schottky Diodes 22
Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature 22
Totale 3.575
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Categoria #
all - tutte 16.674
article - articoli 8.797
book - libri 111
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.582
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202422 0 0 0 0 0 0 0 0 2 0 20 0
2024/20251.756 6 10 168 84 350 47 4 76 18 49 528 416
2025/20262.838 148 240 310 503 568 111 439 175 160 132 52 0
Totale 4.616